JP6377724B2 - ビームグリッドレイアウト - Google Patents

ビームグリッドレイアウト Download PDF

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Publication number
JP6377724B2
JP6377724B2 JP2016511103A JP2016511103A JP6377724B2 JP 6377724 B2 JP6377724 B2 JP 6377724B2 JP 2016511103 A JP2016511103 A JP 2016511103A JP 2016511103 A JP2016511103 A JP 2016511103A JP 6377724 B2 JP6377724 B2 JP 6377724B2
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Japan
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apertures
small
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aperture array
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English (en)
Japanese (ja)
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JP2016522572A (ja
JP2016522572A5 (enExample
Inventor
クイパー、ビンセント・シルベスター
スロット、アーウィン
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マッパー・リソグラフィー・アイピー・ビー．ブイ．
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/3002—Details
    • H01J37/3007—Electron or ion-optical systems
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/043—Beam blanking
    • H01J2237/0435—Multi-aperture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/04—Means for controlling the discharge
    • H01J2237/045—Diaphragms
    • H01J2237/0451—Diaphragms with fixed aperture
    • H01J2237/0453—Diaphragms with fixed aperture multiple apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31774—Multi-beam

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Beam Exposure (AREA)
JP2016511103A 2013-05-03 2014-05-05 ビームグリッドレイアウト Active JP6377724B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201361818919P 2013-05-03 2013-05-03
US61/818,919 2013-05-03
PCT/EP2014/059106 WO2014177718A1 (en) 2013-05-03 2014-05-05 Beam grid layout

Publications (3)

Publication Number Publication Date
JP2016522572A JP2016522572A (ja) 2016-07-28
JP2016522572A5 JP2016522572A5 (enExample) 2018-07-19
JP6377724B2 true JP6377724B2 (ja) 2018-08-22

Family

ID=50630812

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016511103A Active JP6377724B2 (ja) 2013-05-03 2014-05-05 ビームグリッドレイアウト

Country Status (5)

Country Link
US (2) US9934943B2 (enExample)
EP (2) EP3651183B1 (enExample)
JP (1) JP6377724B2 (enExample)
NL (1) NL2010760C2 (enExample)
WO (1) WO2014177718A1 (enExample)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3183742A4 (en) * 2014-08-19 2018-07-18 Intel Corporation Corner rounding correction for electron beam (ebeam) direct write system
EP3010031B1 (en) * 2014-10-16 2017-03-22 Fei Company Charged Particle Microscope with special aperture plate
JP6616986B2 (ja) * 2015-09-14 2019-12-04 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画方法及びマルチ荷電粒子ビーム描画装置
US10395883B2 (en) * 2016-03-31 2019-08-27 Intel Corporation Aperture size modulation to enhance ebeam patterning resolution
CN111108582B (zh) 2017-08-08 2024-07-05 Asml荷兰有限公司 带电粒子阻挡元件、包括这样的元件的曝光装置以及使用这样的曝光装置的方法
KR102582089B1 (ko) * 2018-06-12 2023-09-22 에이에스엠엘 네델란즈 비.브이. 다중 빔 검사 장치를 사용하여 샘플을 스캐닝하기 위한 시스템 및 방법
US10593509B2 (en) 2018-07-17 2020-03-17 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
US10483080B1 (en) * 2018-07-17 2019-11-19 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device, multi-beam blanker for a charged particle beam device, and method for operating a charged particle beam device
EP3834222A1 (en) 2018-08-09 2021-06-16 ASML Netherlands B.V. An apparatus for multiple charged-particle beams
JP7234052B2 (ja) 2019-06-28 2023-03-07 株式会社ニューフレアテクノロジー マルチ電子ビーム画像取得装置及びマルチ電子ビーム画像取得方法
US11309163B2 (en) * 2019-11-07 2022-04-19 Applied Materials, Inc. Multibeamlet charged particle device and method
EP4100986A1 (en) * 2020-02-04 2022-12-14 Carl Zeiss MultiSEM GmbH Multi-beam digital scan and image acquisition
IL295492A (en) * 2020-03-05 2022-10-01 Asml Netherlands Bv A beam array geometric optimizer for a multi-beam inspection system
CN115485805A (zh) 2020-05-01 2022-12-16 Asml荷兰有限公司 用于高性能检测设备的增强架构
WO2021239754A1 (en) 2020-05-28 2021-12-02 Asml Netherlands B.V. Enhanced architecture for high-performance detection device technical field
JP2022034866A (ja) * 2020-08-19 2022-03-04 株式会社ニューフレアテクノロジー マルチ電子ビーム検査装置及びその調整方法
WO2022048896A1 (en) 2020-09-03 2022-03-10 Asml Netherlands B.V. Multi-beam charged particle column
EP3982392A1 (en) 2020-10-08 2022-04-13 ASML Netherlands B.V. Multi-beam charged particle column
WO2022128392A1 (en) * 2020-12-14 2022-06-23 Asml Netherlands B.V. Charged particle system, method of processing a sample using a multi-beam of charged particles
JP7080533B1 (ja) 2021-11-09 2022-06-06 株式会社Photo electron Soul 電子銃、電子線適用装置およびマルチ電子ビームの形成方法
KR20240096776A (ko) * 2021-11-09 2024-06-26 가부시키가이샤 포토 일렉트론 소울 전자총, 전자선 적용 장치 및 멀티 전자빔의 형성 방법
EP4202970A1 (en) * 2021-12-24 2023-06-28 ASML Netherlands B.V. Alignment determination method and computer program
EP4280252A1 (en) 2022-05-16 2023-11-22 ASML Netherlands B.V. Charged particle optical device and method
WO2023202819A1 (en) 2022-04-18 2023-10-26 Asml Netherlands B.V. Charged particle optical device and method

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3480449D1 (de) * 1983-08-15 1989-12-14 Applied Materials Inc Apparatus for ion implantation
US5369282A (en) * 1992-08-03 1994-11-29 Fujitsu Limited Electron beam exposure method and system for exposing a pattern on a substrate with an improved accuracy and throughput
AU2003274829A1 (en) 2002-10-25 2004-05-13 Mapper Lithography Ip B.V. Lithography system
EP2701178B1 (en) 2002-10-30 2020-02-12 ASML Netherlands B.V. Electron beam exposure system
KR101068607B1 (ko) 2003-03-10 2011-09-30 마퍼 리쏘그라피 아이피 비.브이. 복수 개의 빔렛 발생 장치
CN100543920C (zh) 2003-05-28 2009-09-23 迈普尔平版印刷Ip有限公司 带电粒子小射束曝光系统
WO2005010618A2 (en) 2003-07-30 2005-02-03 Mapper Lithography Ip B.V. Modulator circuitry
GB2414111B (en) * 2004-04-30 2010-01-27 Ims Nanofabrication Gmbh Advanced pattern definition for particle-beam processing
GB2413694A (en) * 2004-04-30 2005-11-02 Ims Nanofabrication Gmbh Particle-beam exposure apparatus
US7391033B1 (en) 2005-05-04 2008-06-24 Kla-Tencor Technologies Corporation Skew-oriented multiple electron beam apparatus and method
US8890095B2 (en) 2005-07-25 2014-11-18 Mapper Lithography Ip B.V. Reliability in a maskless lithography system
US7709815B2 (en) 2005-09-16 2010-05-04 Mapper Lithography Ip B.V. Lithography system and projection method
WO2007048433A1 (en) * 2005-10-28 2007-05-03 Carl Zeiss Sms Gmbh Charged particle beam exposure system
TWI432908B (zh) 2006-03-10 2014-04-01 瑪波微影Ｉｐ公司 微影系統及投射方法
US8258484B2 (en) 2008-04-15 2012-09-04 Mapper Lithography Ip B.V. Beamlet blanker arrangement
CN102113083B (zh) * 2008-06-04 2016-04-06 迈普尔平版印刷Ip有限公司 对目标进行曝光的方法和系统
NL1037639C2 (en) * 2010-01-21 2011-07-25 Mapper Lithography Ip Bv Lithography system with lens rotation.
US9384938B2 (en) * 2010-09-28 2016-07-05 Carl Zeiss Microscopy Gmbh Particle-optical systems and arrangements and particle-optical components for such systems and arrangements
JP5744564B2 (ja) * 2011-02-25 2015-07-08 キヤノン株式会社 描画装置、描画方法、および、物品の製造方法
JP2013069813A (ja) * 2011-09-21 2013-04-18 Canon Inc 描画装置、および、物品の製造方法
JP6128744B2 (ja) * 2012-04-04 2017-05-17 キヤノン株式会社 描画装置、描画方法、および、物品の製造方法
JP6087570B2 (ja) * 2012-10-15 2017-03-01 キヤノン株式会社 描画装置、および物品の製造方法
US20150311031A1 (en) * 2014-04-25 2015-10-29 Ims Nanofabrication Ag Multi-Beam Tool for Cutting Patterns

Also Published As

Publication number Publication date
US9934943B2 (en) 2018-04-03
EP3020062A1 (en) 2016-05-18
EP3020062B1 (en) 2020-01-22
JP2016522572A (ja) 2016-07-28
EP3651183A1 (en) 2020-05-13
USRE49952E1 (en) 2024-04-30
WO2014177718A1 (en) 2014-11-06
EP3651183B1 (en) 2024-04-17
US20160071696A1 (en) 2016-03-10
NL2010760C2 (en) 2014-11-04

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