JP2014068010A5 - - Google Patents
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- JP2014068010A5 JP2014068010A5 JP2013193661A JP2013193661A JP2014068010A5 JP 2014068010 A5 JP2014068010 A5 JP 2014068010A5 JP 2013193661 A JP2013193661 A JP 2013193661A JP 2013193661 A JP2013193661 A JP 2013193661A JP 2014068010 A5 JP2014068010 A5 JP 2014068010A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light emitting
- ultraviolet light
- width
- translucent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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- 239000000758 substrate Substances 0.000 claims description 23
- 239000004065 semiconductor Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229910052594 sapphire Inorganic materials 0.000 claims 9
- 239000010980 sapphire Substances 0.000 claims 9
- 229910002704 AlGaN Inorganic materials 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 1
- 239000002245 particle Substances 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 238000000605 extraction Methods 0.000 description 5
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120105933A KR102059030B1 (ko) | 2012-09-24 | 2012-09-24 | 자외선 발광 소자 |
| KR10-2012-0105933 | 2012-09-24 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014068010A JP2014068010A (ja) | 2014-04-17 |
| JP2014068010A5 true JP2014068010A5 (enExample) | 2016-11-04 |
| JP6324690B2 JP6324690B2 (ja) | 2018-05-16 |
Family
ID=49223669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013193661A Active JP6324690B2 (ja) | 2012-09-24 | 2013-09-19 | 紫外線発光素子 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US9029895B2 (enExample) |
| EP (1) | EP2711996B1 (enExample) |
| JP (1) | JP6324690B2 (enExample) |
| KR (1) | KR102059030B1 (enExample) |
| CN (1) | CN103681994B (enExample) |
Families Citing this family (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101436077B1 (ko) | 2011-07-12 | 2014-09-17 | 마루분 가부시키가이샤 | 발광소자 및 그 제조방법 |
| US9412911B2 (en) | 2013-07-09 | 2016-08-09 | The Silanna Group Pty Ltd | Optical tuning of light emitting semiconductor junctions |
| TWI540766B (zh) * | 2013-07-10 | 2016-07-01 | 隆達電子股份有限公司 | 發光二極體封裝結構 |
| EP2955762B1 (en) | 2013-07-17 | 2017-09-13 | Marubun Corporation | Semiconductor light-emitting element and production method thereof |
| JP2015056652A (ja) * | 2013-09-13 | 2015-03-23 | 株式会社東芝 | 窒化物半導体発光装置 |
| US9806229B2 (en) * | 2014-03-06 | 2017-10-31 | Marubun Corporation | Deep ultraviolet LED and method for manufacturing the same |
| CN106415854B (zh) | 2014-05-27 | 2019-10-01 | 斯兰纳Uv科技有限公司 | 包括n型和p型超晶格的电子装置 |
| JP6817072B2 (ja) | 2014-05-27 | 2021-01-20 | シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドSilanna Uv Technologies Pte Ltd | 光電子デバイス |
| JP6636459B2 (ja) | 2014-05-27 | 2020-01-29 | シランナ・ユー・ブイ・テクノロジーズ・プライベート・リミテッドSilanna Uv Technologies Pte Ltd | 半導体構造と超格子とを用いた高度電子デバイス |
| US11322643B2 (en) | 2014-05-27 | 2022-05-03 | Silanna UV Technologies Pte Ltd | Optoelectronic device |
| US9502614B2 (en) * | 2014-06-04 | 2016-11-22 | Formosa Epitaxy Incorporation | Light emitting diode chip, light emitting device, and wafer-level structure of light emitting diode |
| KR102170218B1 (ko) * | 2014-08-05 | 2020-10-26 | 엘지이노텍 주식회사 | 발광소자 패키지 |
| KR102236382B1 (ko) * | 2014-09-26 | 2021-04-05 | 엘지디스플레이 주식회사 | 발광 다이오드 패키지 및 백라이트 유닛 |
| WO2016113935A1 (ja) | 2015-01-16 | 2016-07-21 | 丸文株式会社 | 深紫外led及びその製造方法 |
| JP2016163015A (ja) * | 2015-03-05 | 2016-09-05 | 旭化成株式会社 | 紫外線発光素子及びその製造方法 |
| JP6521443B2 (ja) * | 2015-06-29 | 2019-05-29 | 国立研究開発法人情報通信研究機構 | 深紫外光を放射する半導体発光素子、該半導体発光素子を備える発光モジュール、及び該半導体発光素子の製造方法 |
| TWI637530B (zh) * | 2015-09-03 | 2018-10-01 | 丸文股份有限公司 | 深紫外led及其製造方法 |
| WO2017145026A1 (en) | 2016-02-23 | 2017-08-31 | Silanna UV Technologies Pte Ltd | Resonant optical cavity light emitting device |
| US10418517B2 (en) | 2016-02-23 | 2019-09-17 | Silanna UV Technologies Pte Ltd | Resonant optical cavity light emitting device |
| US10054485B2 (en) | 2016-03-17 | 2018-08-21 | Raytheon Company | UV LED-phosphor based hyperspectral calibrator |
| US10056526B2 (en) | 2016-03-30 | 2018-08-21 | Marubun Corporation | Deep ultraviolet LED and method for manufacturing the same |
| JP6564348B2 (ja) * | 2016-06-06 | 2019-08-21 | 日機装株式会社 | 深紫外発光素子 |
| US10121932B1 (en) * | 2016-11-30 | 2018-11-06 | The United States Of America As Represented By The Secretary Of The Navy | Tunable graphene light-emitting device |
| TWI804567B (zh) | 2018-01-26 | 2023-06-11 | 日商丸文股份有限公司 | 深紫外led及其製造方法 |
| US10643964B2 (en) | 2018-07-02 | 2020-05-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Structures for bonding a group III-V device to a substrate by stacked conductive bumps |
| US10622514B1 (en) | 2018-10-15 | 2020-04-14 | Silanna UV Technologies Pte Ltd | Resonant optical cavity light emitting device |
| JP2020113584A (ja) * | 2019-01-08 | 2020-07-27 | 豊田合成株式会社 | 発光素子の製造方法 |
| RU2712326C1 (ru) * | 2019-03-06 | 2020-01-28 | Акционерное общество "Научно-производственное предприятие "Исток" имени А.И. Шокина" (АО "НПП "Исток" им. Шокина") | Способ получения поглощающего свч-энергию покрытия |
| JP7257247B2 (ja) * | 2019-05-16 | 2023-04-13 | スタンレー電気株式会社 | 発光装置 |
| KR102809515B1 (ko) * | 2019-05-22 | 2025-05-19 | 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 | 발광소자패키지 및 광원장치 |
| US11764328B2 (en) * | 2019-08-13 | 2023-09-19 | Epistar Corporation | Light-emitting diode package having bump formed in wriggle shape |
| CN111129274A (zh) * | 2019-12-31 | 2020-05-08 | 广东省半导体产业技术研究院 | 一种微led器件及阵列 |
| KR102541836B1 (ko) | 2020-09-02 | 2023-06-09 | 삼성전자주식회사 | 디스플레이 장치 |
| US11747008B2 (en) * | 2021-03-10 | 2023-09-05 | Bolb Inc. | Deep ultraviolet light source |
| CN114300603A (zh) * | 2021-12-29 | 2022-04-08 | 惠州视维新技术有限公司 | 发光器件及其制备方法、灯板、背光模块以及显示装置 |
| WO2023123469A1 (zh) * | 2021-12-31 | 2023-07-06 | 厦门三安光电有限公司 | 一种发光二极管及其发光装置 |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5779924A (en) * | 1996-03-22 | 1998-07-14 | Hewlett-Packard Company | Ordered interface texturing for a light emitting device |
| JP2907170B2 (ja) * | 1996-12-28 | 1999-06-21 | サンケン電気株式会社 | 半導体発光素子 |
| JP3707279B2 (ja) * | 1998-03-02 | 2005-10-19 | 松下電器産業株式会社 | 半導体発光装置 |
| US20040012958A1 (en) * | 2001-04-23 | 2004-01-22 | Takuma Hashimoto | Light emitting device comprising led chip |
| JP2002368263A (ja) * | 2001-06-06 | 2002-12-20 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
| CN100552987C (zh) * | 2002-05-28 | 2009-10-21 | 松下电工株式会社 | 发光器件、使用该器件的照明装置及表面发光照明装置 |
| JP4329374B2 (ja) * | 2002-07-29 | 2009-09-09 | パナソニック電工株式会社 | 発光素子およびその製造方法 |
| JP4238666B2 (ja) * | 2003-07-17 | 2009-03-18 | 豊田合成株式会社 | 発光装置の製造方法 |
| DE102004034166B4 (de) * | 2003-07-17 | 2015-08-20 | Toyoda Gosei Co., Ltd. | Lichtemittierende Vorrichtung |
| JP2005302804A (ja) * | 2004-04-07 | 2005-10-27 | Toyoda Gosei Co Ltd | 発光ダイオード及びその製造方法 |
| JP2005209794A (ja) * | 2004-01-21 | 2005-08-04 | Koito Mfg Co Ltd | 発光モジュール及び灯具 |
| WO2006052834A2 (en) * | 2004-11-05 | 2006-05-18 | Optical Research Associates | Methods for manipulating light extraction from a light |
| JP2006253298A (ja) * | 2005-03-09 | 2006-09-21 | Toshiba Corp | 半導体発光素子及び半導体発光装置 |
| US7196354B1 (en) * | 2005-09-29 | 2007-03-27 | Luminus Devices, Inc. | Wavelength-converting light-emitting devices |
| JP5032043B2 (ja) * | 2006-03-27 | 2012-09-26 | 豊田合成株式会社 | フェラスメタルアルカリ土類金属ケイ酸塩混合結晶蛍光体およびこれを用いた発光装置 |
| JP2007281037A (ja) * | 2006-04-03 | 2007-10-25 | Dowa Holdings Co Ltd | 半導体発光素子及びその製造方法 |
| US7932534B2 (en) * | 2009-06-09 | 2011-04-26 | Sinmat, Inc. | High light extraction efficiency solid state light sources |
| TWI557936B (zh) * | 2010-04-30 | 2016-11-11 | 美國波士頓大學信託會 | 具能帶結構位變動之高效率紫外光發光二極體 |
| KR20120092325A (ko) * | 2011-02-11 | 2012-08-21 | 서울옵토디바이스주식회사 | 광 결정 구조를 갖는 발광 다이오드 및 그것을 제조하는 방법 |
-
2012
- 2012-09-24 KR KR1020120105933A patent/KR102059030B1/ko active Active
-
2013
- 2013-06-06 US US13/911,853 patent/US9029895B2/en active Active
- 2013-09-19 JP JP2013193661A patent/JP6324690B2/ja active Active
- 2013-09-23 EP EP13185571.0A patent/EP2711996B1/en active Active
- 2013-09-24 CN CN201310439080.6A patent/CN103681994B/zh active Active
-
2015
- 2015-04-03 US US14/678,104 patent/US9240533B2/en not_active Expired - Fee Related
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