CN103681994B - 发光装置 - Google Patents

发光装置 Download PDF

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Publication number
CN103681994B
CN103681994B CN201310439080.6A CN201310439080A CN103681994B CN 103681994 B CN103681994 B CN 103681994B CN 201310439080 A CN201310439080 A CN 201310439080A CN 103681994 B CN103681994 B CN 103681994B
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CN
China
Prior art keywords
emitting device
light
substrate
light emitting
layer
Prior art date
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Active
Application number
CN201310439080.6A
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English (en)
Chinese (zh)
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CN103681994A (zh
Inventor
李光七
朴仲绪
李泰林
崔云庆
金敬训
朴海进
尹欢喜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Liyu Semiconductor Co ltd
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LG Innotek Co Ltd
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Publication of CN103681994A publication Critical patent/CN103681994A/zh
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Led Devices (AREA)
  • Led Device Packages (AREA)
  • Non-Portable Lighting Devices Or Systems Thereof (AREA)
CN201310439080.6A 2012-09-24 2013-09-24 发光装置 Active CN103681994B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020120105933A KR102059030B1 (ko) 2012-09-24 2012-09-24 자외선 발광 소자
KR10-2012-0105933 2012-09-24

Publications (2)

Publication Number Publication Date
CN103681994A CN103681994A (zh) 2014-03-26
CN103681994B true CN103681994B (zh) 2019-04-26

Family

ID=49223669

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310439080.6A Active CN103681994B (zh) 2012-09-24 2013-09-24 发光装置

Country Status (5)

Country Link
US (2) US9029895B2 (enExample)
EP (1) EP2711996B1 (enExample)
JP (1) JP6324690B2 (enExample)
KR (1) KR102059030B1 (enExample)
CN (1) CN103681994B (enExample)

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WO2015008776A1 (ja) 2013-07-17 2015-01-22 丸文株式会社 半導体発光素子及び製造方法
JP2015056652A (ja) * 2013-09-13 2015-03-23 株式会社東芝 窒化物半導体発光装置
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CN106415854B (zh) 2014-05-27 2019-10-01 斯兰纳Uv科技有限公司 包括n型和p型超晶格的电子装置
US11322643B2 (en) 2014-05-27 2022-05-03 Silanna UV Technologies Pte Ltd Optoelectronic device
WO2015181657A1 (en) 2014-05-27 2015-12-03 The Silanna Group Pty Limited Advanced electronic device structures using semiconductor structures and superlattices
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US9502614B2 (en) * 2014-06-04 2016-11-22 Formosa Epitaxy Incorporation Light emitting diode chip, light emitting device, and wafer-level structure of light emitting diode
KR102170218B1 (ko) * 2014-08-05 2020-10-26 엘지이노텍 주식회사 발광소자 패키지
KR102236382B1 (ko) * 2014-09-26 2021-04-05 엘지디스플레이 주식회사 발광 다이오드 패키지 및 백라이트 유닛
KR101848034B1 (ko) 2015-01-16 2018-04-11 마루분 가부시키가이샤 심자외 led 및 그 제조 방법
JP2016163015A (ja) * 2015-03-05 2016-09-05 旭化成株式会社 紫外線発光素子及びその製造方法
JP6521443B2 (ja) * 2015-06-29 2019-05-29 国立研究開発法人情報通信研究機構 深紫外光を放射する半導体発光素子、該半導体発光素子を備える発光モジュール、及び該半導体発光素子の製造方法
KR102056414B1 (ko) 2015-09-03 2020-01-22 마루분 가부시키가이샤 심자외 led 및 그 제조 방법
US10418517B2 (en) 2016-02-23 2019-09-17 Silanna UV Technologies Pte Ltd Resonant optical cavity light emitting device
WO2017145026A1 (en) 2016-02-23 2017-08-31 Silanna UV Technologies Pte Ltd Resonant optical cavity light emitting device
US10054485B2 (en) 2016-03-17 2018-08-21 Raytheon Company UV LED-phosphor based hyperspectral calibrator
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JP6564348B2 (ja) * 2016-06-06 2019-08-21 日機装株式会社 深紫外発光素子
US10121932B1 (en) * 2016-11-30 2018-11-06 The United States Of America As Represented By The Secretary Of The Navy Tunable graphene light-emitting device
JP7316610B6 (ja) 2018-01-26 2024-02-19 丸文株式会社 深紫外ｌｅｄ及びその製造方法
US10643964B2 (en) * 2018-07-02 2020-05-05 Taiwan Semiconductor Manufacturing Co., Ltd. Structures for bonding a group III-V device to a substrate by stacked conductive bumps
US10622514B1 (en) 2018-10-15 2020-04-14 Silanna UV Technologies Pte Ltd Resonant optical cavity light emitting device
JP2020113584A (ja) * 2019-01-08 2020-07-27 豊田合成株式会社 発光素子の製造方法
RU2712326C1 (ru) * 2019-03-06 2020-01-28 Акционерное общество "Научно-производственное предприятие "Исток" имени А.И. Шокина" (АО "НПП "Исток" им. Шокина") Способ получения поглощающего свч-энергию покрытия
JP7257247B2 (ja) * 2019-05-16 2023-04-13 スタンレー電気株式会社 発光装置
KR102809515B1 (ko) * 2019-05-22 2025-05-19 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자패키지 및 광원장치
US11764328B2 (en) * 2019-08-13 2023-09-19 Epistar Corporation Light-emitting diode package having bump formed in wriggle shape
CN111129274A (zh) * 2019-12-31 2020-05-08 广东省半导体产业技术研究院 一种微led器件及阵列
KR102541836B1 (ko) 2020-09-02 2023-06-09 삼성전자주식회사 디스플레이 장치
US11747008B2 (en) * 2021-03-10 2023-09-05 Bolb Inc. Deep ultraviolet light source
CN114300603A (zh) * 2021-12-29 2022-04-08 惠州视维新技术有限公司 发光器件及其制备方法、灯板、背光模块以及显示装置
WO2023123469A1 (zh) * 2021-12-31 2023-07-06 厦门三安光电有限公司 一种发光二极管及其发光装置

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CN1656620A (zh) * 2002-05-28 2005-08-17 松下电工株式会社 发光器件、使用该器件的照明装置及表面发光照明系统
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Also Published As

Publication number Publication date
KR102059030B1 (ko) 2019-12-24
KR20140039594A (ko) 2014-04-02
JP6324690B2 (ja) 2018-05-16
US20140084317A1 (en) 2014-03-27
JP2014068010A (ja) 2014-04-17
EP2711996A2 (en) 2014-03-26
US9029895B2 (en) 2015-05-12
US20150214448A1 (en) 2015-07-30
EP2711996A3 (en) 2015-11-18
US9240533B2 (en) 2016-01-19
CN103681994A (zh) 2014-03-26
EP2711996B1 (en) 2018-11-21

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Effective date of registration: 20210816

Address after: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Leyu Semiconductor Co.,Ltd.

Address before: Seoul, South Kerean

Patentee before: LG INNOTEK Co.,Ltd.

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CP03 Change of name, title or address

Address after: 215499 No. 168, Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Liyu Semiconductor Co.,Ltd.

Country or region after: China

Address before: 168 Changsheng North Road, Taicang City, Suzhou City, Jiangsu Province

Patentee before: Suzhou Leyu Semiconductor Co.,Ltd.

Country or region before: China

CP03 Change of name, title or address