JP2014058000A - レーザー微細加工中に形成される個々の穴のエネルギー監視又は制御 - Google Patents
レーザー微細加工中に形成される個々の穴のエネルギー監視又は制御 Download PDFInfo
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- JP2014058000A JP2014058000A JP2013262395A JP2013262395A JP2014058000A JP 2014058000 A JP2014058000 A JP 2014058000A JP 2013262395 A JP2013262395 A JP 2013262395A JP 2013262395 A JP2013262395 A JP 2013262395A JP 2014058000 A JP2014058000 A JP 2014058000A
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Classifications
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
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- Optics & Photonics (AREA)
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- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Laser Beam Processing (AREA)
Abstract
【解決手段】方法及び装置は、レーザー微細加工装置により実現される結果の質を向上させる。レーザー微細加工(152)を制御するパラメーターに関するデータ(158、178)が微細加工中に記録され、微細加工するために用いられたパラメーターに関する外観により特定され、前記装置に保存される。保存されたデータは、リアルタイム制御を可能にするために微細加工中に取り出され、又は統計的な加工制御を行うために被加工物(174)の加工後に取り出される。
【選択図】図3
Description
式:tdrill = (パルス数)/(パルス繰り返し周波数)
34、36、38、40 層
152 制御装置
154 レーザー加工ビーム
Claims (11)
- プログラム可能な制御装置により制御されるレーザービームパルスを用いて被加工物に微細加工された外観に関する情報を提供する方法であって、
前記外観は1又は2以上の仕様により特徴付けられており、
前記被加工物は1又は2以上の層により特徴付けられており、
前記層は材料種類及び厚さにより特徴付けられており、
前記レーザービームパルスは1又は2以上のパラメーターにより特徴付けられており、
前記制御装置は、レーザービームパルスパラメーター、外観仕様又は被加工物特徴の1又は2以上を含むデータを処理する演算処理装置に操作可能に接続されており、
前記方法は、微細加工された1又は2以上の外観のために、該外観を微細加工するために用いられた1又は2以上のレーザービームパルスパラメーターを記録すること、
記録されたパラメーターを該パラメーターで微細加工された特定の外観の外観仕様と関連付けるために前記パラメーターを特定すること、
特定されたパラメーターを保存すること、
保存されたパラメーターを取り出すこと、
微細加工された外観の均一な質を実現するため、取り出されたパラメーターを前記制御装置と共同して処理することを含む、方法。 - 前記レーザービームパルスパラメーターは、種類、サイズ、パルス繰り返し数、パルス数、パルス形状、パルス幅、パルスエネルギー、ピークパルス出力、パルスエネルギー公差、整定時間、スポットサイズ、ビーム形状又は波長の1又は2以上を含む、請求項1に記載の方法。
- 前記外観仕様は、種類、位置、深さ、形状、大きさ、直径又は微細加工後における残留する許容可能なデブリの1又は2以上を含む、請求項1に記載の方法。
- 前記被加工物特徴は、層の数及び順番並びに各層を含む材料の1又は2以上を含む、請求項1に記載の方法。
- 処理されたパラメーターは統計的品質管理に用いられる、請求項1に記載の方法。
- 処理されたパラメーターは、微細加工された外観が、予め選択された値と一致しない寸法を有することを示すために用いられる、請求項1に記載の方法。
- 微細加工された特定の外観に関する処理されたパラメーターは、前記制御装置が、追加の微細加工を行うために前記特定の外観に追加のレーザービームパルスを向けるようにするために用いられる、請求項1に記載の方法。
- 処理された外観仕様、処理された被加工物特徴及び処理されたレーザービームパルスパラメーターは、外観を微細加工するために用いられたレーザービームパルスパラメーターを修正するために用いられる、請求項1に記載の方法。
- 処理されたパラメーターは、次の被加工物に微細加工するために用いられるパラメーターを修正するために前記制御装置により使用される、請求項1に記載の方法。
- 微細加工された被加工物は、1又は2以上の層の誘電体又は様々な厚さの導電材料を含むプリント基板である、請求項1に記載の方法。
- 微細加工された構造は、1又は2以上の層の被加工物を貫くほぼ円形の穴である、請求項1に記載の方法。
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Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20150901 |