JP2014047134A5 - - Google Patents
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- Publication number
- JP2014047134A5 JP2014047134A5 JP2013173170A JP2013173170A JP2014047134A5 JP 2014047134 A5 JP2014047134 A5 JP 2014047134A5 JP 2013173170 A JP2013173170 A JP 2013173170A JP 2013173170 A JP2013173170 A JP 2013173170A JP 2014047134 A5 JP2014047134 A5 JP 2014047134A5
- Authority
- JP
- Japan
- Prior art keywords
- plane
- gan crystal
- base substrate
- gan
- growing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims 22
- 239000000758 substrate Substances 0.000 claims 12
- 238000004519 manufacturing process Methods 0.000 claims 6
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 claims 4
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 4
- 229910052731 fluorine Inorganic materials 0.000 claims 4
- 239000011737 fluorine Substances 0.000 claims 4
- 229910052740 iodine Inorganic materials 0.000 claims 4
- 239000011630 iodine Substances 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201213695531A | 2012-08-31 | 2012-08-31 | |
| US61/695531 | 2012-08-31 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2014047134A JP2014047134A (ja) | 2014-03-17 |
| JP2014047134A5 true JP2014047134A5 (enExample) | 2016-11-24 |
Family
ID=50607163
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013173170A Pending JP2014047134A (ja) | 2012-08-31 | 2013-08-23 | Ｉｉｉ族窒化物結晶塊 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2014047134A (enExample) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5420281B2 (ja) * | 2009-03-11 | 2014-02-19 | 日立金属株式会社 | Ｉｉｉ族窒化物半導体単結晶の製造方法、及びｉｉｉ族窒化物半導体単結晶基板の製造方法 |
| US9175418B2 (en) * | 2009-10-09 | 2015-11-03 | Soraa, Inc. | Method for synthesis of high quality large area bulk gallium based crystals |
| CN103282554A (zh) * | 2010-12-27 | 2013-09-04 | 三菱化学株式会社 | 半导体结晶的制造方法、结晶制造装置以及第13族氮化物半导体结晶 |
-
2013
- 2013-08-23 JP JP2013173170A patent/JP2014047134A/ja active Pending
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