JP2014047134A - Ｉｉｉ族窒化物結晶塊 - Google Patents

Ｉｉｉ族窒化物結晶塊 Download PDF

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JP2014047134A
JP2014047134A JP2013173170A JP2013173170A JP2014047134A JP 2014047134 A JP2014047134 A JP 2014047134A JP 2013173170 A JP2013173170 A JP 2013173170A JP 2013173170 A JP2013173170 A JP 2013173170A JP 2014047134 A JP2014047134 A JP 2014047134A
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Prior art keywords
crystal
group iii
iii nitride
plane
main surface
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Japanese (ja)
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JP2014047134A5 (enExample
Inventor
Hideo Fujisawa
英夫 藤澤
Yutaka Mikawa
豊 三川
Kazunori Kamata
和典 鎌田
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Mitsubishi Chemical Corp
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Mitsubishi Chemical Corp
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Publication of JP2014047134A publication Critical patent/JP2014047134A/ja
Publication of JP2014047134A5 publication Critical patent/JP2014047134A5/ja
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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2013173170A 2012-08-31 2013-08-23 Ｉｉｉ族窒化物結晶塊 Pending JP2014047134A (ja)

Applications Claiming Priority (2)

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US201213695531A 2012-08-31 2012-08-31
US61/695531 2012-08-31

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JP2014047134A true JP2014047134A (ja) 2014-03-17
JP2014047134A5 JP2014047134A5 (enExample) 2016-11-24

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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010208899A (ja) * 2009-03-11 2010-09-24 Hitachi Cable Ltd Ｉｉｉ族窒化物半導体単結晶の製造方法、及びｉｉｉ族窒化物半導体単結晶基板の製造方法
US20110256693A1 (en) * 2009-10-09 2011-10-20 Soraa, Inc. Method for Synthesis of High Quality Large Area Bulk Gallium Based Crystals
WO2012090918A1 (ja) * 2010-12-27 2012-07-05 三菱化学株式会社 半導体結晶の製造方法、結晶製造装置および第１３族窒化物半導体結晶

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010208899A (ja) * 2009-03-11 2010-09-24 Hitachi Cable Ltd Ｉｉｉ族窒化物半導体単結晶の製造方法、及びｉｉｉ族窒化物半導体単結晶基板の製造方法
US20110256693A1 (en) * 2009-10-09 2011-10-20 Soraa, Inc. Method for Synthesis of High Quality Large Area Bulk Gallium Based Crystals
WO2012090918A1 (ja) * 2010-12-27 2012-07-05 三菱化学株式会社 半導体結晶の製造方法、結晶製造装置および第１３族窒化物半導体結晶

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