JP2014045337A - 電力増幅装置及び送信機 - Google Patents
電力増幅装置及び送信機 Download PDFInfo
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- JP2014045337A JP2014045337A JP2012186457A JP2012186457A JP2014045337A JP 2014045337 A JP2014045337 A JP 2014045337A JP 2012186457 A JP2012186457 A JP 2012186457A JP 2012186457 A JP2012186457 A JP 2012186457A JP 2014045337 A JP2014045337 A JP 2014045337A
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- power
- filter
- power amplifying
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- subsequent stage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/171—A filter circuit coupled to the output of an amplifier
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/204—A hybrid coupler being used at the output of an amplifier circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/207—A hybrid coupler being used as power measuring circuit at the output of an amplifier circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21106—An input signal being distributed in parallel over the inputs of a plurality of power amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21142—Output signals of a plurality of power amplifiers are parallel combined to a common output
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2203/00—Indexing scheme relating to amplifiers with only discharge tubes or only semiconductor devices as amplifying elements covered by H03F3/00
- H03F2203/20—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F2203/21—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F2203/211—Indexing scheme relating to power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
- H03F2203/21157—A filter circuit being added at the output of a power amplifier stage
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
- Transmitters (AREA)
- Microwave Amplifiers (AREA)
Abstract
【解決手段】電力増幅装置は、所定の周波数をフィルタリングするフィルタと、このフィルタが設けられる基板上に、このフィルタの後段に設けられ、電力を分配する分岐線路と、分岐線路の後段に設けられ、電力を増幅する電力増幅素子と、電力増幅素子の後段に設けられ、電力を合成する接続線路と、を備える。電力増幅装置は、さらに伝送される高周波信号をモニタする方向性結合器を備えていてもよい。
【選択図】図1
Description
(第1の実施形態)
図1は、第1の実施形態の電力増幅装置1を示す図である。図2は、フィルタ11の例を示す図である。
図3は、第2の実施形態の電力増幅装置1を示す図である。図3に示すように、電力増幅装置1は、電力分配部10と、電力増幅素子20と、電力合成部30と、を備える。
図4は、第3の実施形態の電力増幅装置1を示す図である。図4に示すように、電力増幅装置1は、電力分配部10と、電力増幅素子20と、電力合成部30と、を備える。
図5は、送信機2の構成を示すブロック図である。図5に示すように、送信機2は、電力を分配する分岐線路13と、分岐線路13の後段に設けられ、電力を増幅する電力増幅素子20と、電力増幅素子20の後段に設けられ、電力を合成する接続線路31と、接続線路31が設けられる基板上の一つに合成された接続線路31の後段に、所定の周波数をフィルタリングするフィルタ11と、を備える複数の電力増幅装置1と、電力増幅装置1によって増幅された電力を合成する合成器52と、を備える。
12:方向性結合器
13:分岐線路
20:電力増幅素子
31:接続線路
Claims (5)
- 電力を分配する分岐線路と、
前記分岐線路の後段に設けられ、電力を増幅する電力増幅素子と、
前記電力増幅素子の後段に設けられ、電力を合成する接続線路と、
一つに合成される前記接続線路の後段に、所定の周波数をフィルタリングするフィルタと、
を備える電力増幅装置。 - 前記フィルタは、
前記接続線路を最後に一つに合成する接続部の前段に設けられる請求項1記載の電力増幅装置。 - 前記フィルタは、
前記電力増幅素子の後段の最初の接続部の前段に設けられる請求項1記載の電力増幅装置。 - 伝送される高周波信号をモニタする方向性結合器をさらに備え、
前記フィルタは、
前記接続線路が設けられる基板と同一の基板上に設けられる請求項2又は請求項3記載の電力増幅装置。 - 電力を分配する分配器と、
前記分配器によって分配された電力を増幅し、所定の周波数をフィルタリングするフィルタと、前記フィルタが設けられる基板上に、前記フィルタの後段に設けられ、電力を分配する分岐線路と、前記分岐線路の後段に設けられ、電力を増幅する電力増幅素子と、前記電力増幅素子の後段に設けられ、電力を合成する接続線路と、を備える複数の電力増幅装置と、
前記電力増幅装置によって増幅された電力を合成する合成器と、
を備える送信機。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012186457A JP5902070B2 (ja) | 2012-08-27 | 2012-08-27 | 電力増幅装置及び送信機 |
EP13164177.1A EP2704320A1 (en) | 2012-08-27 | 2013-04-17 | Power amplifying apparatus for amplifying power and transmitter for transmitting signal by amplifying power |
US13/868,244 US9172340B2 (en) | 2012-08-27 | 2013-04-23 | Power amplifying apparatus for amplifying power and transmitter for transmitting signal by amplifying power |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012186457A JP5902070B2 (ja) | 2012-08-27 | 2012-08-27 | 電力増幅装置及び送信機 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014045337A true JP2014045337A (ja) | 2014-03-13 |
JP5902070B2 JP5902070B2 (ja) | 2016-04-13 |
Family
ID=48139808
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012186457A Active JP5902070B2 (ja) | 2012-08-27 | 2012-08-27 | 電力増幅装置及び送信機 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9172340B2 (ja) |
EP (1) | EP2704320A1 (ja) |
JP (1) | JP5902070B2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020516192A (ja) * | 2017-04-06 | 2020-05-28 | テレフオンアクチーボラゲット エルエム エリクソン(パブル) | 広帯域電力増幅器装置 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4772856A (en) * | 1986-07-30 | 1988-09-20 | Nippon Telegraph And Telephone Corporation | Power amplifier |
JPS6453615A (en) * | 1987-08-25 | 1989-03-01 | Fujitsu Ltd | Transistor type high frequency power source |
JPH0715255A (ja) * | 1993-06-29 | 1995-01-17 | Toshiba Corp | 電力増幅器 |
JPH10163772A (ja) * | 1996-10-04 | 1998-06-19 | Sanyo Electric Co Ltd | 電力増幅器およびチップキャリヤ |
JP2000059152A (ja) * | 1998-07-22 | 2000-02-25 | Eni Technol Inc | 高出力無線周波増幅器及び無線周波増幅回路 |
JP2002335136A (ja) * | 2001-05-11 | 2002-11-22 | Matsushita Electric Ind Co Ltd | 高周波半導体装置 |
WO2006095051A1 (en) * | 2005-03-11 | 2006-09-14 | Nokia Siemens Networks Oy | Measurement circuit and method for measuring the level of an rf signal, and a transmitter including a measurement circuit |
US20110068865A1 (en) * | 2009-09-23 | 2011-03-24 | Tialinx, Inc. | V-Band High-Power Transmitter With Integrated Power Combiner |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4064464A (en) * | 1976-04-13 | 1977-12-20 | Westinghouse Electric Corporation | Amplitude stabilized power amplifier |
JPH01137710A (ja) * | 1987-11-24 | 1989-05-30 | Sumitomo Electric Ind Ltd | 広帯域増幅器 |
GB2359206B (en) * | 2000-02-08 | 2004-06-23 | Wireless Systems Int Ltd | Amplifier arrangement |
US7161423B2 (en) | 2004-06-30 | 2007-01-09 | Silicon Laboratories Inc. | Parallel power amplifier and associated methods |
JP2006108741A (ja) | 2004-09-30 | 2006-04-20 | Toshiba Corp | 高周波電力分配合成器 |
US7474156B2 (en) * | 2007-05-25 | 2009-01-06 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Impedance transformer for amplifier and amplifier including the same |
US8064555B1 (en) * | 2009-01-22 | 2011-11-22 | The United States Of America As Represented By The Secretary Of The Navy | Input/output multi-level channelizer amplifier |
JP5519558B2 (ja) * | 2011-03-10 | 2014-06-11 | ルネサスエレクトロニクス株式会社 | 高周波電力増幅装置 |
-
2012
- 2012-08-27 JP JP2012186457A patent/JP5902070B2/ja active Active
-
2013
- 2013-04-17 EP EP13164177.1A patent/EP2704320A1/en not_active Withdrawn
- 2013-04-23 US US13/868,244 patent/US9172340B2/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4772856A (en) * | 1986-07-30 | 1988-09-20 | Nippon Telegraph And Telephone Corporation | Power amplifier |
JPS6453615A (en) * | 1987-08-25 | 1989-03-01 | Fujitsu Ltd | Transistor type high frequency power source |
JPH0715255A (ja) * | 1993-06-29 | 1995-01-17 | Toshiba Corp | 電力増幅器 |
JPH10163772A (ja) * | 1996-10-04 | 1998-06-19 | Sanyo Electric Co Ltd | 電力増幅器およびチップキャリヤ |
JP2000059152A (ja) * | 1998-07-22 | 2000-02-25 | Eni Technol Inc | 高出力無線周波増幅器及び無線周波増幅回路 |
JP2002335136A (ja) * | 2001-05-11 | 2002-11-22 | Matsushita Electric Ind Co Ltd | 高周波半導体装置 |
WO2006095051A1 (en) * | 2005-03-11 | 2006-09-14 | Nokia Siemens Networks Oy | Measurement circuit and method for measuring the level of an rf signal, and a transmitter including a measurement circuit |
US20110068865A1 (en) * | 2009-09-23 | 2011-03-24 | Tialinx, Inc. | V-Band High-Power Transmitter With Integrated Power Combiner |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020516192A (ja) * | 2017-04-06 | 2020-05-28 | テレフオンアクチーボラゲット エルエム エリクソン(パブル) | 広帯域電力増幅器装置 |
US11652452B2 (en) | 2017-04-06 | 2023-05-16 | Telefonaktiebolaget Lm Ericsson (Publ) | Wideband power amplifier arrangement |
Also Published As
Publication number | Publication date |
---|---|
US20140055196A1 (en) | 2014-02-27 |
US9172340B2 (en) | 2015-10-27 |
EP2704320A1 (en) | 2014-03-05 |
JP5902070B2 (ja) | 2016-04-13 |
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