JP2014037623A5 - - Google Patents
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- Publication number
- JP2014037623A5 JP2014037623A5 JP2013147428A JP2013147428A JP2014037623A5 JP 2014037623 A5 JP2014037623 A5 JP 2014037623A5 JP 2013147428 A JP2013147428 A JP 2013147428A JP 2013147428 A JP2013147428 A JP 2013147428A JP 2014037623 A5 JP2014037623 A5 JP 2014037623A5
- Authority
- JP
- Japan
- Prior art keywords
- crystal grains
- sputtering target
- sputtered particles
- oxide
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims 9
- 238000005477 sputtering target Methods 0.000 claims 7
- 238000003776 cleavage reaction Methods 0.000 claims 5
- 239000002245 particle Substances 0.000 claims 5
- 230000007017 scission Effects 0.000 claims 5
- 239000011701 zinc Substances 0.000 claims 4
- 230000015572 biosynthetic process Effects 0.000 claims 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 229910052738 indium Inorganic materials 0.000 claims 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims 2
- 150000002500 ions Chemical class 0.000 claims 2
- 238000000034 method Methods 0.000 claims 2
- 230000001846 repelling effect Effects 0.000 claims 2
- 229910052725 zinc Inorganic materials 0.000 claims 2
- 238000004519 manufacturing process Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013147428A JP6204094B2 (ja) | 2012-07-19 | 2013-07-16 | スパッタリング用ターゲットの使用方法および酸化物膜の作製方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012160570 | 2012-07-19 | ||
| JP2012160570 | 2012-07-19 | ||
| JP2013147428A JP6204094B2 (ja) | 2012-07-19 | 2013-07-16 | スパッタリング用ターゲットの使用方法および酸化物膜の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017165398A Division JP6460605B2 (ja) | 2012-07-19 | 2017-08-30 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2014037623A JP2014037623A (ja) | 2014-02-27 |
| JP2014037623A5 true JP2014037623A5 (enExample) | 2016-09-01 |
| JP6204094B2 JP6204094B2 (ja) | 2017-09-27 |
Family
ID=49945622
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013147428A Expired - Fee Related JP6204094B2 (ja) | 2012-07-19 | 2013-07-16 | スパッタリング用ターゲットの使用方法および酸化物膜の作製方法 |
| JP2017165398A Expired - Fee Related JP6460605B2 (ja) | 2012-07-19 | 2017-08-30 | 半導体装置の作製方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017165398A Expired - Fee Related JP6460605B2 (ja) | 2012-07-19 | 2017-08-30 | 半導体装置の作製方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20140021036A1 (enExample) |
| JP (2) | JP6204094B2 (enExample) |
| KR (1) | KR20140011945A (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012169449A1 (en) | 2011-06-08 | 2012-12-13 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target, method for manufacturing sputtering target, and method for forming thin film |
| US10557192B2 (en) * | 2012-08-07 | 2020-02-11 | Semiconductor Energy Laboratory Co., Ltd. | Method for using sputtering target and method for forming oxide film |
| US9885108B2 (en) * | 2012-08-07 | 2018-02-06 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming sputtering target |
| US9153650B2 (en) | 2013-03-19 | 2015-10-06 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor |
| TWI652822B (zh) | 2013-06-19 | 2019-03-01 | 日商半導體能源研究所股份有限公司 | 氧化物半導體膜及其形成方法 |
| TWI608523B (zh) | 2013-07-19 | 2017-12-11 | 半導體能源研究所股份有限公司 | Oxide semiconductor film, method of manufacturing oxide semiconductor film, and semiconductor device |
| WO2015125042A1 (en) | 2014-02-19 | 2015-08-27 | Semiconductor Energy Laboratory Co., Ltd. | Oxide, semiconductor device, module, and electronic device |
| TWI652362B (zh) | 2014-10-28 | 2019-03-01 | 日商半導體能源研究所股份有限公司 | 氧化物及其製造方法 |
| JP6647841B2 (ja) | 2014-12-01 | 2020-02-14 | 株式会社半導体エネルギー研究所 | 酸化物の作製方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3945887B2 (ja) * | 1998-01-30 | 2007-07-18 | Ｈｏｙａ株式会社 | 導電性酸化物薄膜を有する物品及びその製造方法 |
| JP3628566B2 (ja) * | 1999-11-09 | 2005-03-16 | 株式会社日鉱マテリアルズ | スパッタリングターゲット及びその製造方法 |
| EP1752430B1 (en) * | 1999-11-25 | 2009-06-17 | Idemitsu Kosan Co., Ltd. | Transparent conductive oxide |
| JP3694737B2 (ja) * | 2001-07-27 | 2005-09-14 | 独立行政法人物質・材料研究機構 | 酸化亜鉛基ホモロガス化合物薄膜の製造法 |
| EP1422312B1 (en) * | 2001-08-02 | 2011-05-11 | Idemitsu Kosan Co., Ltd. | Sputtering target, transparent conductive film, and their manufacturing method |
| JP5217051B2 (ja) * | 2006-11-27 | 2013-06-19 | オムロン株式会社 | 薄膜製造方法 |
| WO2010024034A1 (ja) * | 2008-08-27 | 2010-03-04 | 出光興産株式会社 | スパッタリングターゲット及びそれからなる酸化物半導体薄膜 |
| JP5296468B2 (ja) * | 2008-09-19 | 2013-09-25 | 富士フイルム株式会社 | 成膜方法及び成膜装置 |
| KR101980505B1 (ko) * | 2009-10-08 | 2019-05-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체층, 반도체 장치 및 그 제조 방법 |
| WO2011065244A1 (en) * | 2009-11-28 | 2011-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| JP2011181722A (ja) * | 2010-03-02 | 2011-09-15 | Idemitsu Kosan Co Ltd | スパッタリングターゲット |
| JP2012052227A (ja) * | 2010-08-05 | 2012-03-15 | Mitsubishi Materials Corp | スパッタリングターゲットの製造方法およびスパッタリングターゲット |
| KR102505248B1 (ko) * | 2010-12-03 | 2023-03-03 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
| KR102424181B1 (ko) * | 2010-12-17 | 2022-07-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 재료 및 반도체 장치 |
| US8847220B2 (en) * | 2011-07-15 | 2014-09-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
-
2013
- 2013-07-11 KR KR1020130081734A patent/KR20140011945A/ko not_active Withdrawn
- 2013-07-15 US US13/942,263 patent/US20140021036A1/en not_active Abandoned
- 2013-07-16 JP JP2013147428A patent/JP6204094B2/ja not_active Expired - Fee Related
-
2017
- 2017-08-30 JP JP2017165398A patent/JP6460605B2/ja not_active Expired - Fee Related
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