WO2014042139A8 - 酸化物焼結体およびスパッタリングターゲット - Google Patents

酸化物焼結体およびスパッタリングターゲット Download PDF

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Publication number
WO2014042139A8
WO2014042139A8 PCT/JP2013/074340 JP2013074340W WO2014042139A8 WO 2014042139 A8 WO2014042139 A8 WO 2014042139A8 JP 2013074340 W JP2013074340 W JP 2013074340W WO 2014042139 A8 WO2014042139 A8 WO 2014042139A8
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sintered body
oxide
oxide sintered
sputtering target
phase
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PCT/JP2013/074340
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English (en)
French (fr)
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WO2014042139A1 (ja
Inventor
幸樹 田尾
守賀 金丸
旭 南部
英雄 畠
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株式会社コベルコ科研
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Priority to CN201380047313.6A priority Critical patent/CN104619673B/zh
Priority to US14/427,761 priority patent/US9905403B2/en
Priority to KR1020157006265A priority patent/KR101762043B1/ko
Publication of WO2014042139A1 publication Critical patent/WO2014042139A1/ja
Publication of WO2014042139A8 publication Critical patent/WO2014042139A8/ja

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Abstract

 酸化亜鉛と;酸化インジウムと;酸化ガリウムと;酸化錫を混合および焼結して得られる酸化物焼結体。前記酸化物焼結体の相対密度が85%以上であり、前記酸化物焼結体をX線回折したとき、ZnSnO相とInGaZnO相が所定の割合で含まれている。
PCT/JP2013/074340 2012-09-14 2013-09-10 酸化物焼結体およびスパッタリングターゲット WO2014042139A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201380047313.6A CN104619673B (zh) 2012-09-14 2013-09-10 氧化物烧结体及溅射靶
US14/427,761 US9905403B2 (en) 2012-09-14 2013-09-10 Oxide sintered body and sputtering target
KR1020157006265A KR101762043B1 (ko) 2012-09-14 2013-09-10 산화물 소결체 및 스퍼터링 타깃

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-203577 2012-09-14
JP2012203577A JP5883368B2 (ja) 2012-09-14 2012-09-14 酸化物焼結体およびスパッタリングターゲット

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WO2014042139A1 WO2014042139A1 (ja) 2014-03-20
WO2014042139A8 true WO2014042139A8 (ja) 2015-03-12

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US (1) US9905403B2 (ja)
JP (1) JP5883368B2 (ja)
KR (1) KR101762043B1 (ja)
CN (1) CN104619673B (ja)
TW (1) TWI507374B (ja)
WO (1) WO2014042139A1 (ja)

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Publication number Priority date Publication date Assignee Title
CN105705673B (zh) * 2013-11-06 2018-05-04 三井金属矿业株式会社 溅射靶及其制造方法
WO2015080271A1 (ja) * 2013-11-29 2015-06-04 株式会社コベルコ科研 酸化物焼結体およびスパッタリングターゲット、並びにその製造方法
JP6398645B2 (ja) * 2014-11-20 2018-10-03 Tdk株式会社 スパッタリングターゲット、透明導電性酸化物薄膜、及び導電性フィルム
TWI577032B (zh) * 2015-04-24 2017-04-01 群創光電股份有限公司 顯示裝置
JP6144858B1 (ja) * 2016-04-13 2017-06-07 株式会社コベルコ科研 酸化物焼結体およびスパッタリングターゲット、並びにそれらの製造方法
JP6254308B2 (ja) * 2016-04-19 2017-12-27 株式会社コベルコ科研 酸化物焼結体およびスパッタリングターゲット、並びにそれらの製造方法
WO2017183263A1 (ja) * 2016-04-19 2017-10-26 株式会社コベルコ科研 酸化物焼結体およびスパッタリングターゲット、並びにそれらの製造方法
JP6364561B1 (ja) * 2017-05-18 2018-07-25 株式会社コベルコ科研 酸化物焼結体およびスパッタリングターゲット
JP6364562B1 (ja) * 2017-05-19 2018-07-25 株式会社コベルコ科研 酸化物焼結体およびスパッタリングターゲット
CN108642458A (zh) * 2018-06-20 2018-10-12 江苏瑞尔光学有限公司 一种ito镀膜靶材及其制备方法
CN109659411B (zh) * 2018-12-11 2020-02-14 中山大学 一种氧化镓半导体叠层结构及其制备方法
CN112537954B (zh) * 2020-12-17 2022-04-15 中山智隆新材料科技有限公司 一种igzo靶材的制备方法

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Publication number Priority date Publication date Assignee Title
JPH07243036A (ja) 1994-03-07 1995-09-19 Japan Energy Corp Itoスパッタリングタ−ゲット
JP3746094B2 (ja) 1995-06-28 2006-02-15 出光興産株式会社 ターゲットおよびその製造方法
JP4198918B2 (ja) * 2002-02-14 2008-12-17 日鉱金属株式会社 硫化亜鉛を主成分とするスパッタリングターゲット及び該スパッタリングターゲットの製造方法
TWI532862B (zh) 2008-05-22 2016-05-11 Idemitsu Kosan Co A sputtering target, a method for forming an amorphous oxide film using the same, and a method for manufacturing a thin film transistor
KR101549295B1 (ko) * 2008-12-12 2015-09-01 이데미쓰 고산 가부시키가이샤 복합 산화물 소결체 및 그것으로 이루어지는 스퍼터링 타겟
JP5591523B2 (ja) * 2009-11-19 2014-09-17 出光興産株式会社 長期成膜時の安定性に優れたIn−Ga−Zn−O系酸化物焼結体スパッタリングターゲット
JP2013070010A (ja) * 2010-11-26 2013-04-18 Kobe Steel Ltd 薄膜トランジスタの半導体層用酸化物およびスパッタリングターゲット、並びに薄膜トランジスタ
JP2012114367A (ja) * 2010-11-26 2012-06-14 Idemitsu Kosan Co Ltd 錫を含む非晶質酸化物薄膜、及び薄膜トランジスタ
JP2012158512A (ja) 2011-01-14 2012-08-23 Kobelco Kaken:Kk 酸化物焼結体およびスパッタリングターゲット

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Publication number Publication date
CN104619673A (zh) 2015-05-13
JP5883368B2 (ja) 2016-03-15
WO2014042139A1 (ja) 2014-03-20
TW201420544A (zh) 2014-06-01
KR101762043B1 (ko) 2017-07-26
KR20150041137A (ko) 2015-04-15
US9905403B2 (en) 2018-02-27
JP2014058416A (ja) 2014-04-03
CN104619673B (zh) 2016-07-13
TWI507374B (zh) 2015-11-11
US20150235819A1 (en) 2015-08-20

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