JP2014022378A - Imprint device and method of manufacturing article using the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an imprint device that enhances overlay accuracy in an imprint process and is advantageous in easiness.SOLUTION: An imprint device 1 deforms the outer peripheral shape of an existent pattern area 27 formed on a substrate 2, and forms a pattern of resin 3 on the deformed existent pattern area 27. The imprint device 1 has holding means 20 which has a contact face 40 to be brought into contact with the back surface of the substrate 2 and adsorbs the substrate 2 to the contact face 40 to hold the substrate 2, supply means 44 for supplying non-polarity gas to the gap between the back surface of the existent pattern area 27 of the substrate 2 and the contact face 40, and deforming means 10 for deforming the existent pattern area 27 under the state that adsorption force acts on the back surface of the existent pattern area 27 and the non-polarity gas is interposed between the back surface of the existent pattern area 27 and the contact face 40.

Description

  The present invention relates to an imprint apparatus and an article manufacturing method using the same.

  The demand for miniaturization of semiconductor devices, MEMS, and the like has progressed, and in addition to conventional photolithography technology, there is a microfabrication technology that forms a resin pattern on a substrate by molding a resin on a substrate (wafer) with a mold. It attracts attention. This technique is also called an imprint technique, and can form a fine structure on the order of several nanometers on a substrate. For example, one of the imprint techniques is a photocuring method. In an imprint apparatus employing this photocuring method, first, a resin (photocurable resin) is applied to a pattern formation region on a substrate. Next, this resin is molded using a mold on which a pattern is formed. Then, the resin pattern is formed on the substrate by irradiating light to cure the resin and then separating it. In addition to this photocuring method, there is also known a thermosetting method in which the resin is cured by applying heat while pressing the mold and the resin on the substrate.

  Here, the substrate to be processed is subjected to a heat treatment in a film forming process such as sputtering in the semiconductor device manufacturing process, so that the entire substrate is enlarged or reduced, and patterned in two axial directions perpendicular to each other in a plane. The shape (size) may change. Therefore, in the imprint apparatus, when the mold and the resin on the substrate are pressed, it is necessary to match the shape of the pre-formed pattern area formed in advance on the substrate with the shape of the pattern portion formed in the mold. In the case of a conventional exposure apparatus, such shape correction (magnification correction) is performed by changing the reduction magnification of the projection optical system in accordance with the magnification of the substrate or changing the scanning speed of the substrate stage. It is possible to respond by changing each shot size at the time. However, in the imprint apparatus, since there is no projection optical system and the mold and the resin on the substrate are in direct contact, it is difficult to perform such correction. Therefore, in the imprint apparatus, a magnification correction mechanism (shape correction mechanism) that mechanically deforms the mold by applying an external force or displacement from the side surface of the mold is known. As this magnification correction mechanism, Patent Document 1 discloses an apparatus that includes a plurality of actuators and link mechanisms that are installed so as to surround the outer periphery of the mold and apply a compressive force to the side surface of the mold. On the other hand, in addition to mechanically deforming the mold, there is also an apparatus that thermally deforms the mold by heating and expanding it. Patent Document 2 discloses a technique for locally releasing a clamp on a part of a substrate by a substrate holding unit in order to thermally deform the mold and prevent misalignment due to local strain remaining in the substrate. Disclosure.

Special table 2008-504141 JP 2010-98310 A

  However, in the apparatus shown in Patent Document 1, only the shape correction of the mold is performed. However, it is difficult to obtain sufficient overlay accuracy unless the shape correction of the substrate is actually performed. On the other hand, the technique shown in Patent Document 2 can also correct the shape of the substrate, but partially releases the holding of the substrate, that is, is included in the back surface of the substrate and the substrate holding unit. If a region that is not in contact with the chuck is formed, the substrate floats in the height direction in that region. At this time, since the substrate is displaced in the height direction and is also displaced in the plane direction, as a result, it becomes difficult to correct the shape of the substrate. Therefore, a mechanism capable of easily correcting (adjusting) the shape of the substrate with respect to the shape of the mold is desired for the imprint apparatus.

  The present invention has been made in view of such a situation, and an object of the present invention is to provide an imprint apparatus that is advantageous in improving the overlay accuracy during imprint processing and its ease.

  In order to solve the above problems, the present invention is an imprint apparatus that deforms the outer peripheral shape of a pre-formed pattern area formed on a substrate and forms a resin pattern on the deformed pre-formed pattern area. The nonpolar gas is supplied between the holding means that has a contact surface that contacts the back surface of the substrate and holds the substrate by adsorbing the substrate to the contact surface, and the back surface and the contact surface of the pre-formed pattern region of the substrate Deformation in which the pre-formed pattern region is deformed in a state in which an adsorption force is applied to the supply means and the back surface of the pre-formed pattern region, and a nonpolar gas is interposed between the back surface and the contact surface of the pre-formed pattern region And means.

  According to the present invention, for example, it is possible to provide an imprint apparatus that is advantageous in improving the overlay accuracy during imprint processing and its ease.

It is a figure which shows the structure of the imprint apparatus which concerns on 1st Embodiment of this invention. It is a figure which shows the principal part structure of the imprint apparatus which concerns on 1st Embodiment. It is a flowchart which shows the flow of the imprint process which concerns on 1st Embodiment. It is a figure which shows the principal part structure of the imprint apparatus which concerns on 3rd Embodiment.

  Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.

(First embodiment)
First, the imprint apparatus according to the first embodiment of the present invention will be described. FIG. 1 is a schematic diagram illustrating a configuration of an imprint apparatus 1 according to the present embodiment. The imprint apparatus 1 is used for manufacturing a device such as a semiconductor device as an article, and an uncured resin 3 applied on a wafer 2 (substrate) as a substrate to be processed is molded with a mold (mold) 4. This is an apparatus for forming a resin pattern on the wafer 2. In addition, although the imprint apparatus which employ | adopted the photocuring method is illustrated here, it is good also as what employ | adopts a thermosetting method. In the following drawings, the Z axis is taken in parallel to the optical axis of the ultraviolet ray 5 irradiated to the resin on the wafer 2, and the X axis and the Y axis perpendicular to each other are taken in a plane perpendicular to the Z axis. ing. First, the imprint apparatus 1 includes a light irradiation unit 6, a mold holding mechanism 7, a wafer stage 8, a coating unit 9, a wafer deformation mechanism 10 (see FIG. 2), and a control unit 11.

  The light irradiation unit 6 irradiates the mold 4 with ultraviolet rays 5 during imprint processing, particularly when the resin 3 on the wafer 2 is cured. The light irradiation unit 6 includes a light source (resin curing light source) 12 and an illumination optical system 13 that adjusts the ultraviolet rays 5 emitted from the light source 12 to light suitable for imprinting and irradiates the mold 4. The light source 12 may be a lamp such as a halogen lamp, but is not particularly limited as long as it is a light source that transmits light having a wavelength that passes through the mold 4 and cures the resin 3 when irradiated with ultraviolet rays 5. . Although not shown, the illumination optical system 13 may include a lens, a mirror, an aperture, or a shutter for switching between irradiation and light shielding. In the present embodiment, the light irradiation unit 6 is installed in order to employ the photocuring method. However, for example, when the thermosetting method is employed, the thermosetting resin is used instead of the light irradiation unit 6. A heat source part for curing the material will be installed.

  The mold 4 has a polygonal shape (preferably rectangular or square) as the outer peripheral shape, and a pattern portion 4a in which a concavo-convex pattern to be transferred such as a circuit pattern is formed three-dimensionally on the surface of the wafer 2. Including. The material of the mold 4 is a material that can transmit the ultraviolet rays 5, and in this embodiment, quartz is used as an example. Furthermore, the mold 4 may have a cavity (concave portion) having a circular shape and a certain depth on the surface irradiated with the ultraviolet rays 5.

  The mold holding mechanism 7 includes a mold chuck 14 that holds the mold 4, a mold driving mechanism 15 that holds the mold chuck 14 movably, and a magnification correction mechanism 16 that corrects the shape of the mold 4 (pattern part 4 a). Have. The mold chuck 14 can hold the mold 4 by attracting the outer peripheral area of the irradiation surface of the mold 4 with the ultraviolet ray 5 by a vacuum adsorption force or an electrostatic force. For example, when the mold chuck 14 holds the mold 4 by a vacuum suction force, the mold chuck 14 is connected to a vacuum pump (not shown) installed outside, and the suction pressure by the exhaust of the vacuum pump is appropriately adjusted to The adsorption power (holding power) can be adjusted. The mold drive mechanism 15 moves the mold 4 in the respective axial directions so as to selectively perform pressing or separation between the mold 4 and the resin 3 on the wafer 2. Examples of the power source that can be used in the mold driving mechanism 15 include a linear motor and an air cylinder. Further, the mold drive mechanism 15 may be composed of a plurality of drive systems such as a coarse drive system and a fine drive system in order to cope with high-precision positioning of the mold 4. Further, the mold drive mechanism 15 has a position adjustment function not only in the Z-axis direction but also in the X-axis direction, the Y-axis direction, or the θ (rotation around the Z-axis) direction, and a tilt function for correcting the tilt of the mold 4. There may be a configuration having such as. The pressing and pulling operations in the imprint apparatus 1 may be realized by moving the mold 4 in the Z-axis direction, but may be realized by moving the wafer stage 8 in the Z-axis direction. Alternatively, both of them may be moved relatively. The magnification correction mechanism (mold deformation means) 16 is installed on the mold chuck 14 holding side of the mold 4 and mechanically applies an external force or displacement to the side surface of the mold 4 to shape the mold 4 (pattern portion 4a). Correct.

  Further, the mold chuck 14 and the mold driving mechanism 15 have an opening region 17 that allows the ultraviolet rays 5 irradiated from the light irradiation unit 6 to pass toward the wafer 2 at the center (inner side) in the planar direction. Here, the mold chuck 14 (or the mold driving mechanism 15) may include a light transmission member (for example, a glass plate) 19 having a space 18 surrounded by a part of the opening region 17 and the mold 4 as a sealed space. In this case, the pressure in the space 18 is adjusted by a pressure adjusting device (not shown) including a vacuum pump. For example, when the pressure adjusting device presses the mold 4 and the resin 3 on the wafer 2, the pressure in the space 18 is set higher than the outside thereof, so that the pattern portion 4 a is bent convexly toward the wafer 2. However, the resin 3 can be contacted from the center of the pattern portion 4a. Thereby, it can suppress that gas (air) remains between the pattern part 4a and the resin 3, and can fill the uneven | corrugated pattern of the pattern part 4a with the resin 3 to every corner.

  The wafer 2 is, for example, a single crystal silicon substrate or an SOI (Silicon on Insulator) substrate. In a plurality of shots (pattern formation regions) on the wafer 2, a pattern (layer including a pattern) of the resin 3 is formed by the pattern portion 4a. In general, before the wafer 2 is carried into the imprint apparatus 1, a pre-formed pattern area (hereinafter referred to as “substrate-side pattern”) is formed in advance on a plurality of shots in a previous process.

  The wafer stage 8 holds the wafer 2 so as to be movable. For example, when the mold 4 and the resin 3 on the wafer 2 are pressed, the pattern portion 4a and the shot (substrate side pattern) are aligned. The wafer stage 8 includes a wafer chuck (holding means) 20 that holds the wafer 2 by an adsorption force, and a stage drive mechanism 21 that mechanically holds the wafer chuck 20 and can move in each axial direction. Examples of power sources that can be used in the stage drive mechanism 21 include a linear motor and a planar motor. The stage drive mechanism 21 can also be composed of a plurality of drive systems such as a coarse drive system and a fine drive system in each direction of the X axis and the Y axis. Further, there may be a configuration having a drive system for position adjustment in the Z-axis direction, a position adjustment function in the θ direction of the wafer 2, or a tilt function for correcting the tilt of the wafer 2. The wafer stage 8 further includes a plurality of reference mirrors (reflecting portions) 22 corresponding to the X, Y, Z, ωx, ωy, and ωz directions on the side surface. In contrast, the imprint apparatus 1 includes a plurality of laser interferometers 24 that measure the position of the wafer stage 8 by irradiating the reference mirrors 22 with the beams 23, respectively. In FIG. 1, only one set of the reference mirror 22 and the laser interferometer 24 is illustrated. The laser interferometer 24 measures the position of the wafer stage 8 in real time, and the control unit 11 described later executes positioning control of the wafer 2 (wafer stage 8) based on the measured value at this time. As such a position measuring mechanism, in addition to the laser interferometer 24, an encoder using a semiconductor laser can be employed.

  Here, the configuration of the wafer chuck 20 will be described in detail. FIG. 2 is a schematic diagram showing the main configuration of the imprint apparatus 1 including the configuration of the wafer chuck 20. The wafer chuck 20 includes a contact surface 40 that contacts the back surface (surface to be sucked) of the wafer 2 and a suction portion 41 that sucks the back surface of the wafer 2 in a plurality of regions. In particular, the suction unit 41 is connected to a suction device 42 installed outside the wafer chuck 20. For example, in a configuration in which the wafer chuck 20 holds the wafer 2 by a vacuum suction force, the suction device 42 is an exhaust device such as a vacuum pump, and by appropriately adjusting the suction pressure at the suction portion 41 by exhaust of the exhaust device. The adsorption force (holding force) for the mold 4 can be adjusted. As shown in FIG. 2, the suction unit 41 has a plurality of grooves or holes so as to suck the back surface of the wafer 2 in a plurality of regions. The wafer chuck 20 may hold the wafer 2 by another suction means such as electrostatic suction, for example, instead of the vacuum suction. Here, the surface roughness of the contact surface 40 is precisely adjusted to, for example, about 10 nm, so that the contact surface 40 is uniformly contacted and held on the entire back surface of the wafer 2. For example, if the wafer chuck 20 holds the wafer 2 with a vacuum suction force, the wafer 2 is vacuum-sucked with a uniform pressure.

  Further, as shown in FIG. 2, the wafer chuck 20 includes a plurality of supply ports 43 that supply (release) gas between the back surface of the wafer 2 and the contact surface 40, along with the suction portion 41. These supply ports 43 are connected to supply devices (supply means) for supplying a plurality of gases installed outside the wafer chuck 20 via pipes. Hereinafter, the supply apparatus of this embodiment shall be comprised from the 1st supply apparatus 44 which supplies 1st gas, and the 2nd supply apparatus 45 which supplies 2nd gas as an example. The operations of the first and second gases, and the first and second supply devices 44 and 45 will be described in detail below. In FIG. 2, the first and second supply devices 44 and 45 are connected to the plurality of supply ports 43 through one pipe in the main body of the wafer chuck 20. It may be connected. Further, the adsorption device 42 can also collect the first and second gases, respectively. Further, the adsorption device 42 is provided with a gas detection device (not shown) that can detect the presence of gas (for example, component detection), and the gas is normally supplied between the back surface of the wafer 2 and the contact surface 40. It is good also as a structure which can confirm whether it has collected normally. Here, if the wafer chuck 20 holds the wafer 2 with electrostatic attraction force, a collecting device for collecting the first and second gases may be separately installed.

  The application unit 9 is installed in the vicinity of the mold holding mechanism 7 and applies a resin (uncured resin) 3 onto a shot (substrate side pattern) existing on the wafer 2. Here, the resin 3 is an ultraviolet curable resin (photo curable resin, imprint material) having a property of being cured by receiving ultraviolet rays 5 and is appropriately selected according to various conditions such as a semiconductor device manufacturing process. The application unit 9 employs an inkjet method as an application method, and includes a container 25 that stores the uncured resin 3 and a droplet discharge unit 26. The droplet discharge unit 26 has, for example, a piezo-type discharge mechanism (inkjet head). The application amount (discharge amount) of the resin 3 can be adjusted in the range of 0.1 to 10 pL / droplet, and is usually used at about 2 pL / droplet in many cases. The total application amount of the resin 3 is determined by the density of the pattern portion 4a and the desired remaining film thickness. The application unit 9 controls the application position, the application amount, and the like based on the operation command from the control unit 11.

  The wafer deformation mechanism (deformation means) 10 is thermally or mechanically deformed on the wafer 2 held on the wafer stage 8, that is, placed on the wafer chuck 20. Due to the deformation of the wafer 2, the outer peripheral shape of the substrate side pattern 27 (see FIG. 2) formed in advance on the shot on the wafer 2 is corrected. In particular, the wafer deformation mechanism 10 according to the present embodiment can employ, for example, a mechanism that thermally deforms the shape of the wafer 2 by irradiating the wafer 2 with light through the mold 4 and heating it. In this case, although not shown, the wafer deformation mechanism 10 adjusts the heating light source for irradiating light suitable for heating, and the heating light emitted from the heating light source to light suitable for heating the wafer 2. And an optical element. Here, the light source for heating should just be the light which has the wavelength which the resin 3 does not sensitize, for example, is good also as light which has a wavelength in the wavelength band of infrared rays. Further, in order to efficiently irradiate the heating light especially on the pattern portion 4a, the wafer deformation mechanism 10 is molded so that the heating light passes through the opening region 17, as in the light irradiation portion 6, as shown in FIG. It is desirable to be installed in a direction perpendicular to the surface of 4. The configuration of the wafer deformation mechanism 10 is not limited to the above configuration, and for example, the configuration of the substrate-side pattern 27 may be corrected by mechanically applying an external force or displacement in the planar direction to the wafer 2. . In this case, the imprint apparatus 1 separately includes a deformation mechanism for applying an external force or displacement from the side surface of the wafer 2 around the wafer 2.

  The control unit 11 can control operation and adjustment of each component of the imprint apparatus 1. The control unit 11 is configured by a computer, for example, and is connected to each component of the imprint apparatus 1 via a line, and can control each component according to a program or the like. The control unit 11 of the present embodiment controls at least the operation of the wafer deformation mechanism 10 and the operation of the wafer stage 8 associated with the operation of the wafer deformation mechanism 10. The control unit 11 may be configured integrally with other parts of the imprint apparatus 1 (in a common casing), or separate from other parts of the imprint apparatus 1 (in another casing). To).

  In addition, the imprint apparatus 1 performs misalignment between the alignment mark formed on the wafer 2 and the alignment mark formed on the mold 4 in the X-axis and Y-axis directions during the imprint process. An alignment measurement system 30 for measuring is provided. Further, the imprint apparatus 1 extends from the base surface plate 31 on which the wafer stage 8 is placed, the bridge surface plate 32 that fixes the mold holding mechanism 7, and the base surface plate 31. And a support column 34 for supporting the bridge surface plate 32. Further, although not shown in the drawing, the imprint apparatus 1 is not illustrated, but a mold transport mechanism for transporting the mold 4 between the outside of the apparatus and the mold holding mechanism 7 or the wafer 2 between the exterior of the apparatus and the wafer stage 8. It may include a substrate transport mechanism for carrying in and out.

  Next, imprint processing by the imprint apparatus 1 will be described. FIG. 3 is a flowchart showing a basic flow of imprint processing in the present embodiment. First, the control unit 11 transports the wafer 2 to the wafer stage 8 by the substrate transport mechanism, and places and fixes the loaded wafer 2 on the wafer chuck 20 (step S100). Next, the control unit 11 drives the stage drive mechanism 21 to change the position of the wafer 2 as appropriate, and the alignment measurement system 30 sequentially measures the alignment marks on the wafer 2 to accurately determine the position of the wafer 2. To detect. And the control part 11 calculates each transfer coordinate from the detection result, and forms a pattern for every predetermined shot based on this calculation result (step S101).

  Hereinafter, as pattern formation for the substrate side pattern 27 existing on a certain shot, the control unit 11 first applies the application position on the substrate side pattern 27 directly below the droplet discharge unit 26 of the application unit 9 by the stage drive mechanism 21. To position. Thereafter, the controller 11 causes the application unit 9 to apply the resin 3 onto the substrate side pattern 27 (step S102: application process). Next, the controller 11 causes the stage drive mechanism 21 to move and position the wafer 2 so that the substrate side pattern 27 is positioned at the pressing position immediately below the pattern portion 4a. Then, the control part 11 drives the mold drive mechanism 15, and presses the pattern part 4a and the resin 3 on the board | substrate side pattern 27 (step S103: pressing process). By this pressing, the resin 3 is filled in the concavo-convex pattern of the pattern portion 4a. Further, the control unit 11 causes the alignment measuring system 30 to measure the positions of the mold 4 and the wafer 2 in the X-axis and Y-axis directions during or after the stamping process (step S104). Here, “in the stamping process” means that the mold 4 and the wafer 2 are brought close to each other, and after the pattern portion 4 a and the resin 3 on the substrate side pattern 27 come into contact with each other, the mold 4 and the wafer 2 are interposed via the resin 3. The time until the distance is set to the desired distance. Furthermore, the control unit 11 calculates a correction amount for matching the shapes of the pattern unit 4a and the substrate side pattern 27 based on the alignment measurement result obtained in step S104. At the time of step S104, the wafer 2 is vacuum-sucked and held by the wafer chuck 20.

  Here, in the following steps S106 and S107, the control unit 11 appropriately corrects the shape of the substrate-side pattern 27 by the wafer deformation mechanism 10 or the pattern by the magnification correction mechanism 16 based on the correction amount obtained in step S104. The shape of the part 4a is corrected. However, in particular in step S106, it is difficult for the wafer deformation mechanism 10 to easily deform the wafer 2 into a desired shape while the wafer 2 is vacuum-sucked and held on the wafer chuck 20 as in the conventional case. Therefore, in this embodiment, before the wafer 2 is deformed by the wafer deformation mechanism 10, a specific gas is interposed between the back surface of the wafer 2 and the contact surface 40 in advance, and the frictional force between the surfaces is gas lubricated. To reduce. Specifically, the control unit 11 causes the first and second supply devices 44 and 45 to supply the first and second gases from the plurality of supply ports 43 between the back surface of the wafer 2 and the contact surface 40. (Step S105). Here, the viscosity coefficient of the gas is on the order of 1/1000 of that of the lubricating oil conventionally used for reducing the frictional force. In particular, if the gas is a nonpolar gas, the intermolecular force is small, so the interaction between the back surface of the wafer 2 and the contact surface 40 becomes weak, and the frictional force can be reduced efficiently. Therefore, in this embodiment, for example, a rare gas is used as the first gas. Specifically, helium that has a small molecule size and easily enters a gap between the back surface of the wafer 2 and the contact surface 40 is suitable as the first gas. On the other hand, the second gas may be formed on the back surface of the wafer 2 when the frictional force is reduced by adjusting the concentration of the first gas, performing appropriate recovery, or using a liquid such as lubricating oil. It is used for removing the liquid so that it does not remain. For example, air is used as the second gas. In particular, in the gas supply in step S105, the control unit 11 mainly has an effect of reducing the frictional force, so that the control unit 11 has a ratio of the first gas larger than the second gas in the total supply amount. It is desirable to control the first and second supply devices 44 and 45. Further, it is desirable that the control unit 11 temporarily stops the exhaust by the adsorption device 42 by the valve operation during the supply of the gas in step S105. As a result, the suction portion 41 in the wafer chuck 20 is maintained at a certain level of negative pressure even if the suction device 42 is not exhausted. Therefore, the first gas is mainly drawn by a specific amount from the supply port 43 to the adsorption unit 41 and is efficiently supplied between the back surface of the wafer 2 and the contact surface 40. Then, after confirming that the first gas is filled between the back surface of the wafer 2 and the contact surface 40, the control unit 11 opens the valve once closed to restore the adsorption pressure.

  Next, the control unit 11 reduces the frictional force between the back surface of the wafer 2 and the contact surface 40, based on the correction amount obtained in step S104 by the wafer deformation mechanism 10, based on the correction amount. The shape correction of the side pattern 27 is performed as appropriate (step S106). By reducing the frictional force, the wafer deformation mechanism 10 can efficiently thermally deform the substrate side pattern 27 into a desired shape. Next, the control unit 11 causes the magnification correction mechanism 16 to appropriately perform shape correction of the pattern unit 4a based on the correction amount obtained in step S104 (step S107). It should be noted that the order in which each shape correction is performed in steps S106 and S107 may be reversed, or may be simultaneous. After the shapes of the pattern unit 4a and the substrate side pattern 27 are properly matched by the shape corrections in these steps S106 and S107, the control unit 11 proceeds to the following step S108.

  Next, the controller 11 causes the first and second supply devices 44 and 45 to supply the first and second gases again from the plurality of supply ports 43 between the back surface of the wafer 2 and the contact surface 40. (Step S108). However, the supply of gas in step S108 differs from step S105 in that the primary action is recovery and removal of the first gas. Therefore, the control unit 11 controls the first and second supply devices 44 and 45 so that the ratio of the first gas is less than the second gas in the total supply amount, contrary to step S105. Is desirable. Also in this case, it is desirable that the control unit 11 temporarily stops the exhaust by the adsorption device 42 by the valve operation during the gas supply. As a result, the second gas is mainly drawn from the supply port 43 to the adsorption unit 41 by a specific amount, and is efficiently supplied between the back surface of the wafer 2 and the contact surface 40. Then, after confirming that the second gas is filled between the back surface of the wafer 2 and the contact surface 40, the control unit 11 opens the valve once closed, and returns the adsorption pressure to the original.

  Next, the control unit 11 uses the alignment measurement system 30 to check the positions of the mold 4 and the wafer 2 in the X-axis and Y-axis directions in order to check whether the shapes of the pattern unit 4a and the substrate-side pattern 27 are well matched. Is measured again (step S109). Next, if necessary, the control unit 11 performs readjustment of the positions of the mold 4 and the wafer 2 (step S110). Next, the control unit 11 causes the light irradiation unit 6 to irradiate the ultraviolet ray 5 from the back surface (upper surface) of the mold 4 for a predetermined time, and cures the resin 3 with the ultraviolet ray 5 transmitted through the mold 4 (step S111: curing process). . And after resin 3 hardens | cures, the control part 11 redrives the mold drive mechanism 15, and separates the pattern part 4a and the hardened resin 3 (step S112: mold release process). As a result, a three-dimensional resin pattern (layer) is formed on the surface of the substrate-side pattern 27 on the wafer 2 so as to follow the concavo-convex pattern of the pattern portion 4a. By performing such a series of imprint operations a plurality of times while changing shots by driving the wafer stage 8, the imprint apparatus 1 can form a plurality of resin patterns on one wafer 2. .

  As described above, in the imprint process performed by the imprint apparatus 1, particularly during the shape correction of the wafer 2 (substrate-side pattern 27) by the wafer deformation mechanism 10, the back surface of the wafer 2 and the contact surface 40 are caused by gas lubrication. The frictional force between them is reduced. Accordingly, since the wafer 2 is easily deformed on the wafer chuck 20, the wafer deformation mechanism 10 can easily correct the shape of the wafer 2 to a desired shape. Here, particularly in the present embodiment, a first gas mainly acting to reduce friction force between the back surface of the wafer 2 and the contact surface 40, efficient recovery of the first gas, and the wafer 2 A second gas whose main function is to remove the lubricating oil remaining on the back surface is used. At this time, the wafer deformation mechanism 10 can be adjusted by appropriately adjusting the supply amounts of the first and second gases before and after the shape correction, or maintaining the negative pressure while temporarily stopping the exhaust by the adsorption device 42. Further, the above action can be exhibited more efficiently. That is, the imprint apparatus 1 can improve the overlay accuracy by independently transforming the shape of the pattern portion 4a and the shape of the substrate side pattern 27 on the wafer 2 into a desired shape. The accuracy improvement can be realized more easily.

  As described above, according to the present embodiment, it is possible to provide an imprint apparatus that is advantageous in improving the overlay accuracy during imprint processing and its ease.

(Second Embodiment)
Next, an imprint apparatus according to the second embodiment of the present invention will be described. The imprint apparatus according to the present embodiment is characterized in that, as the first gas, a rare gas is exemplified in the first embodiment, but in the present embodiment, a perfluoro-based gas containing fluorine atoms is employed. Perfluoro-based gas that can be used is pentafluoropropane. Since this pentafluoropropane contains a lot of fluorine atoms, the interaction between molecules is weak, and the frictional force between the back surface of the wafer 2 and the contact surface 40 is reduced as in the first embodiment. It is suitable for.

(Third embodiment)
Next, an imprint apparatus according to a third embodiment of the present invention will be described. In the first embodiment, the first and second supply devices 44 and 45 exist only in one system, and are connected to all of the plurality of supply ports 43 in the wafer chuck 20 to supply the first and second gases. It was. On the other hand, the imprint apparatus according to the present embodiment is characterized in that the plurality of supply units are divided into specific groups respectively corresponding to the plurality of regions on the back surface of the wafer 2, and each of the supply unit groups has a first. The gas and the second gas are supplied independently. FIG. 4 is a schematic diagram showing a main configuration of the imprint apparatus 50 including the configuration of the wafer chuck 51 of the present embodiment, corresponding to FIG. 2 of the first embodiment. In FIG. 4, the same components as those of the imprint apparatus 1 according to the first embodiment shown in FIG. As shown in FIG. 4, the wafer chuck 51 is divided into a plurality of regions, particularly, in the present embodiment, a first region 51a and a second region 51b as an example. The first region 51 a includes a first supply unit 52, while the second region 51 b includes a second supply unit 53. And the 1st supply part 52 is connected to the 1st supply apparatus 54 and the 2nd supply apparatus 55 which comprise a 1st supply system, On the other hand, the 2nd supply part 53 is a 2nd supply system. The third supply device 56 and the fourth supply device 57 are connected. Among these, the 1st supply apparatus 54 and the 3rd supply apparatus 56 supply 1st gas said by the said embodiment, On the other hand, the 2nd supply apparatus 55 and the 4th supply apparatus 57 are 2nd gas. Supply.

  Here, FIG. 4 shows a state where the substrate-side pattern 27 to be processed is positioned on the second region 51b. In this case, referring to the flow of the imprint process in the first embodiment shown in FIG. 3, the control unit 11 performs the gas supply process in step S105 and step S108 in the third supply related to the second region 51b. What is necessary is just to implement only with the apparatus 56 and the 4th supply apparatus 57. FIG. At this time, the first supply device 54 and the second supply device 55 related to the first region 51a supply so that the ratio of the first gas is smaller than the second gas in both steps S105 and S108. To do. As a result, only the frictional force between the back surface of the wafer 2 and the contact surface 40 on the second region 51b where the shape correction of the wafer 2 is performed can be reduced, and the efficiency is increased. Note that the number of divisions of the region (group) in the wafer chuck 20 is arbitrary. In the configuration shown in FIG. 4, a plurality of supply devices are installed independently for each of the regions 51a and 51b, but this is not restrictive. For example, the number of supply devices for supplying the first and second gases is one as a whole, the piping of each system connected to each region 51a, 51b is branched in the middle, and the flow rate adjusting unit is installed in each piping. And it is good also as a structure which supplies gas independently. Further, in the configuration shown in FIG. 4, the number of the adsorption devices 42 is one as in the first embodiment, but may be independently installed in each of the areas 51a and 51b.

(Product manufacturing method)
A method for manufacturing a device (semiconductor integrated circuit element, liquid crystal display element, etc.) as an article includes a step of forming a pattern on a substrate (wafer, glass plate, film-like substrate) using the above-described imprint apparatus. Furthermore, the manufacturing method may include a step of etching the substrate on which the pattern is formed. In the case of manufacturing other articles such as patterned media (recording media) and optical elements, the manufacturing method may include other processes for processing a substrate on which a pattern is formed instead of etching. The method for manufacturing an article according to the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.

  As mentioned above, although preferable embodiment of this invention was described, this invention is not limited to these embodiment, A various deformation | transformation and change are possible within the range of the summary.

DESCRIPTION OF SYMBOLS 1 Imprint apparatus 2 Board | substrate 3 Resin 4 Mold 10 Wafer deformation | transformation mechanism 20 Wafer chuck 27 Board | substrate side pattern 40 Contact surface 44 1st supply apparatus

Claims (11)

An imprint apparatus for deforming the outer peripheral shape of a pre-formed pattern area formed on a substrate and forming a resin pattern on the deformed pre-formed pattern area,
A holding means for holding the substrate by adhering the substrate to the contact surface;
Supply means for supplying a nonpolar gas between the back surface of the pre-formed pattern region of the substrate and the contact surface;
The pre-formed pattern region is deformed in a state where an adsorption force is applied to the back surface of the pre-formed pattern region and the nonpolar gas is interposed between the back surface of the pre-formed pattern region and the contact surface. Deformation means;
An imprint apparatus comprising:   The imprint apparatus according to claim 1, wherein the nonpolar gas is a rare gas.   The imprint apparatus according to claim 1, wherein the nonpolar gas is a perfluoro-based gas.   The imprint apparatus according to claim 1, wherein the supply unit supplies air in addition to the nonpolar gas.   The imprint apparatus according to claim 4, wherein a ratio of the nonpolar gas is larger than the air when the pre-formed pattern region is deformed.   The imprint apparatus according to claim 4, wherein a ratio of the nonpolar gas is less than that of the air after at least the preformed pattern region is deformed.   The imprint apparatus according to claim 1, wherein the supply unit supplies the nonpolar gas independently to a plurality of regions with respect to a back surface of the pre-formed pattern region.   The imprint apparatus according to claim 1, wherein the deforming unit deforms the pre-formed pattern region by heating.   The imprint apparatus according to claim 1, wherein the deforming unit deforms the pre-formed pattern region by applying an external force or displacement to the substrate.   The mold deformation means for deforming the pattern part by applying an external force or displacement to a mold having a pattern part for molding the resin pattern is provided. Imprint device. Forming a resin pattern on a substrate using the imprint apparatus according to claim 1;
Processing the substrate on which the pattern is formed in the step;
A method for producing an article comprising:

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