JP2013125817A - Imprint device, imprint method, and article manufacturing method using the device or the method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an imprint device advantageous for improving overlaying accuracy during imprint processing.SOLUTION: An imprint device 1 comprises: a drive mechanism 13 for pressing a pattern section 8a formed on a mold 8 to an uncured resin 15; a mold heating mechanism 6 for heating the mold 8 and providing a temperature distribution to the mold 8 to deform the pattern section 8a; temperature measuring sections 23 and 24 for measuring temperatures of the mold and the substrate 11; and a control section 7 for instructing the mold heating mechanism 6 to deform a shape of the pattern section 8a so as to approach a shape of a pattern on a substrate side previously existing in a pattern formation region on the substrate 11 on which the pattern is to be formed, from when the provision of the temperature distribution is stopped until the pattern section 8a is pressed to the uncured resin 15, and for referring to the temperatures of the mold 8 and the substrate 11 measured by the temperature measuring sections 23 and 24, and for, when a temperature difference between the mold 8 and the substrate 11 is not more than a tolerance, instructing the drive mechanism 13 to pressing the deformed pattern section 8a to the uncured resin 15.

Description

  The present invention relates to an imprint apparatus, an imprint method, and a method for manufacturing an article using the same.

  The demand for miniaturization of semiconductor devices and MEMS has advanced, and in addition to conventional photolithography technology, attention has been focused on microfabrication technology that forms an uncured resin on a substrate with a mold and forms a resin pattern on the substrate. Collecting. This technique is also called an imprint technique, and can form a fine structure on the order of several nanometers on a substrate. For example, as one of imprint techniques, there is a photocuring method. In an imprint apparatus employing this photocuring method, first, an ultraviolet curable resin (imprint material, photocurable resin) is applied to a shot which is an imprint region on a substrate (wafer). Next, this resin (uncured resin) is molded by a mold. Then, the resin pattern is formed on the substrate by irradiating ultraviolet rays to cure the resin and then separating the resin.

  Here, the substrate subjected to the imprint process is subjected to a heat treatment in a film forming process such as sputtering in a series of device manufacturing processes, so that the entire substrate is enlarged or reduced, and is orthogonal in a plane 2 The shape (size) of the pattern may change in the axial direction. Therefore, in the imprint apparatus, when pressing the mold and the resin on the substrate, it is necessary to match the shape of the substrate side pattern (existing pattern) formed on the substrate with the shape of the pattern portion formed on the mold. There is. In the case of a conventional exposure apparatus, such shape correction (magnification correction) is performed by changing the reduction magnification of the projection optical system in accordance with the magnification of the substrate or changing the scanning speed of the substrate stage. It is possible to respond by changing each shot size at the time. However, in the imprint apparatus, since there is no projection optical system and the mold and the resin on the substrate are in direct contact, it is difficult to perform such correction. Therefore, the imprint apparatus employs a magnification correction mechanism (shape correction mechanism) that mechanically deforms the mold by applying an external force or displacement from the side surface of the mold.

  For example, consider a case where this imprint apparatus is applied to a manufacturing process of a semiconductor device having a half pitch of about 32 nm. At this time, according to ITRS (International Technology Roadmap for Semiconductors), the overlay accuracy is 6.4 nm. Therefore, in order to cope with this, it is necessary to perform shape correction with an accuracy of several nanometers or less. On the other hand, the mold (pattern part) used in the imprint apparatus may be distorted due to the following reasons. For example, a mold has a pattern surface facing upward at the time of manufacture, whereas the pattern surface faces downward when used (when pressed). Therefore, there is a possibility that the pattern portion is deformed due to the influence of gravity or the like during use. In addition, the pattern portion is generally formed by a drawing apparatus using an electron beam or the like, but distortion may occur due to distortion aberration of the optical system of the drawing apparatus even in this formation. Further, even if the pattern portion can be manufactured without distortion, if the pattern previously formed on the substrate is distorted, the overlay accuracy is affected. Therefore, as a countermeasure against such distortion (deformation) of the mold, the shape correction of the mold is performed using the magnification correction mechanism. On the other hand, the shape correction of the mold is not limited to mechanical deformation, and there is, for example, thermal deformation. Patent Document 1 corrects the mold and the substrate to a desired shape by performing temperature control between the mold and the substrate by light irradiation and generating desired thermal deformation in each. A resist pattern forming apparatus is disclosed. Patent Document 2 discloses a processing apparatus that suppresses the occurrence of local thermal distortion in the substrate when the mold and the resin on the substrate are pressed by reducing the temperature difference between the die and the substrate. doing.

JP 2004-259985 A Japanese Patent No. 4574240

  However, only by mechanically deforming the mold by the conventional magnification correction mechanism, higher order typified by an arc shape, barrel shape, or pincushion shape, which is necessary to achieve overlay accuracy of several nanometers or less. It is difficult to correct the deformation component. For example, a substance such as quartz generally used as a mold material has a Poisson's ratio of about 0.1 to 0.2. Such a material having a positive Poisson's ratio is deformed so as to expand in a direction perpendicular to the axis when compressed and deformed in a certain axial direction. It is not suitable for correcting the next deformation component. On the other hand, the method of thermally deforming the mold as shown in Patent Document 1 can deform the mold isotropically, and therefore can cope with higher-order deformation components. However, in this method of thermally deforming the mold, the heated mold and the substrate are in direct contact with each other through the resin, so that the heat of the mold is transmitted to the substrate, and unnecessary thermal deformation can occur on the substrate. There is sex. At this time, if the coefficient of thermal expansion of the substrate material is larger than that of the mold material, the amount of unnecessary thermal deformation of the substrate is larger than the correction amount of the mold, which affects the overlay accuracy during the imprint process. Effect. Therefore, in order to improve the overlay accuracy, it is necessary to correct higher-order deformation components of the mold without causing unnecessary deformation of the mold or the substrate. However, in Patent Document 2, for example, direct heating is performed. There is no description on how to deal with unnecessary deformations other than at times.

  The present invention has been made in view of such circumstances, and an object thereof is to provide an imprint apparatus that is advantageous in improving overlay accuracy during imprint processing.

  In order to solve the above problems, the present invention provides an imprint apparatus for forming a cured resin pattern on a substrate by molding and curing an uncured resin on the substrate with a mold, A driving mechanism for pressing at least one of the pattern portion formed on the mold and the uncured resin, a mold heating mechanism for heating the mold and imparting a temperature distribution to the mold to deform the pattern portion; A pattern should be formed between the temperature measurement unit that measures the temperature of the mold and the substrate, and the mold heating mechanism after the temperature distribution is stopped and before the pattern unit and uncured resin are pressed. The shape of the pattern portion is deformed so as to approach the shape of the substrate-side pattern pre-existing in the pattern formation region on the substrate, and the temperature of the mold and the substrate measured by the temperature measurement unit is referred to. Temperature difference When it is less than the allowable value, the drive mechanism, characterized in that it comprises a control unit which causes pressing the pattern portion and the uncured resin after deformation.

  According to the present invention, for example, it is possible to provide an imprint apparatus that is advantageous for improving overlay accuracy during imprint processing.

It is a figure which shows the structure of the imprint apparatus which concerns on 1st Embodiment of this invention. It is a flowchart which shows the operation | movement sequence at the time of an imprint process. It is a figure which shows the example of the shape of the some board | substrate side pattern which exists on a wafer. It is a figure which shows the mode of the shape change of the pattern part at the time of mold shape correction | amendment.

  Hereinafter, embodiments for carrying out the present invention will be described with reference to the drawings.

(First embodiment)
First, the imprint apparatus according to the first embodiment of the present invention will be described. FIG. 1 is a schematic diagram illustrating a configuration of an imprint apparatus 1 according to the present embodiment. The imprint apparatus 1 is used for manufacturing a device such as a semiconductor device as an article, and forms an uncured resin on a wafer (on a substrate) as a substrate to be processed with a mold, and a resin pattern on the wafer. Is a device for forming Here, an imprint apparatus employing a photocuring method is used. In the following figures, the Z axis is taken parallel to the optical axis of the illumination system that irradiates the resin on the wafer with ultraviolet rays, and the X axis and Y axis perpendicular to each other are taken in a plane perpendicular to the Z axis. ing. First, the imprint apparatus 1 includes a light irradiation unit 2, a mold holding mechanism 3, a wafer stage 4, a coating unit 5, a mold heating mechanism 6, and a control unit 7.

  The light irradiation unit 2 irradiates the mold 8 with ultraviolet rays 9 during the imprint process. The light irradiation unit 2 includes a light source (light source for resin curing) 10 and an optical element (optical system) that adjusts the ultraviolet rays 9 emitted from the light source 10 to light suitable for imprinting. In this embodiment, the light irradiation unit 2 is installed in order to employ the photocuring method. However, for example, when the thermosetting method is employed, the light irradiation unit 2 is replaced with a thermosetting resin. A heat source part for curing the material will be installed.

  The mold 8 has a polygonal shape (preferably, a rectangle or a square) as an outer peripheral shape, and a pattern portion 8a in which a concavo-convex pattern to be transferred such as a circuit pattern is formed in a three-dimensional shape on the surface of the wafer 11. Including. The material of the mold 8 is a material that can transmit the ultraviolet rays 9, and in this embodiment, quartz is used as an example. Further, the mold 8 may have a cavity (concave portion) having a circular shape and a certain depth on the surface irradiated with the ultraviolet rays 9.

  The mold holding mechanism 3 includes a mold chuck 12 that holds the mold 8, a mold driving mechanism 13 that holds the mold chuck 12 movably, and a magnification correction mechanism 14 that corrects the shape of the mold 8 (pattern portion 8a). Have. The mold chuck (die holding part) 12 can hold the mold 8 by attracting the outer peripheral area of the irradiation surface of the ultraviolet ray 9 in the mold 8 by a vacuum adsorption force or electrostatic force. For example, when the mold chuck 12 holds the mold 8 by a vacuum suction force, the mold chuck 12 is connected to a vacuum pump (not shown) installed outside, and the suction pressure due to the exhaust of the vacuum pump is appropriately adjusted, so that the mold chuck 12 The adsorption power (holding power) can be adjusted. The mold driving mechanism 13 moves the mold 8 in the respective axial directions so as to selectively press or separate the mold 8 and the resin 15 on the wafer 11. Examples of the power source that can be used in the mold drive mechanism 13 include a linear motor and an air cylinder. Further, the mold drive mechanism 13 may be composed of a plurality of drive systems such as a coarse drive system and a fine drive system in order to cope with high-precision positioning of the mold 8. Furthermore, the mold drive mechanism 13 is not only in the Z-axis direction but also in the X-axis direction, Y-axis direction, or θ (rotation around the Z-axis) direction, and a tilt function for correcting the tilt of the mold 8. There may be a configuration having such as. Note that the pressing and pulling operations in the imprint apparatus 1 may be realized by moving the mold 8 in the Z-axis direction, but may be realized by moving the wafer stage 4 in the Z-axis direction. Alternatively, both of them may be moved relatively. The magnification correction mechanism (mold deformation mechanism) 14 is installed on the mold chuck 12 holding side of the mold 8, and mechanically applies an external force or displacement to the side surface of the mold 8 to form the shape of the mold 8 (pattern part 8 a). Correct.

  Furthermore, the mold chuck 12 and the mold driving mechanism 13 have an opening region 16 that allows the ultraviolet rays 9 irradiated from the light irradiation unit 2 to pass toward the wafer 11 at the center (inner side) in the planar direction. Here, the mold chuck 12 (or the mold driving mechanism 13) may include a light transmitting member (for example, a glass plate) 18 having a space 17 surrounded by a part of the opening region 16 and the mold 8 as a sealed space. In this case, the pressure in the space 17 is adjusted by a pressure adjusting device (not shown) including a vacuum pump. For example, when the pressure adjustment device presses the mold 8 and the resin 15 on the wafer 11, the pressure in the space 17 is set higher than the outside thereof, so that the pattern portion 8 a is bent convexly toward the wafer 11. However, the resin 15 can be contacted from the center of the pattern portion 8a. Thereby, it can suppress that gas (air) remains between the pattern part 8a and the resin 15, and can fill the uneven | corrugated pattern of the pattern part 8a with the resin 15 to every corner.

  The wafer 11 is, for example, a single crystal silicon substrate or an SOI (Silicon on Insulator) substrate. A plurality of pattern formation areas on the wafer 11 (patterns (hereinafter referred to as “substrate-side patterns” have been already formed in the previous process before being carried into the imprint apparatus 1) are formed by the pattern portion 8a. A pattern of the resin 15 (a layer including the pattern) is formed.

  The wafer stage 4 holds the wafer 11 in a movable manner, and performs, for example, alignment between the pattern portion 8a and the substrate side pattern when the mold 8 and the resin 15 on the wafer 11 are pressed. The wafer stage 4 includes a wafer chuck 19 that holds the wafer 11 by an adsorption force, and a stage drive mechanism 20 that mechanically holds the wafer chuck 19 and is movable in each axial direction. Examples of the power source that can be employed in the stage drive mechanism 20 include a linear motor and a planar motor. The stage drive mechanism 20 can also be composed of a plurality of drive systems such as a coarse drive system and a fine drive system in each direction of the X axis and the Y axis. Furthermore, there may be a configuration having a drive system for position adjustment in the Z-axis direction, a position adjustment function in the θ direction of the wafer 11, or a tilt function for correcting the tilt of the wafer 11. Although not shown, the wafer stage 4 includes a plurality of reference mirrors (reflecting portions) corresponding to the directions of X, Y, Z, ωx, ωy, and ωz on the side surface. On the other hand, the imprint apparatus 1 includes a plurality of laser interferometers (length measuring devices) (not shown) that measure the position of the wafer stage 4 by irradiating these reference mirrors with beams. The laser interferometer measures the position of the wafer stage 4 in real time, and the control unit 7 described later executes positioning control of the wafer 11 (wafer stage 4) based on the measured value at this time. Further, the wafer chuck 19 has a reference mark 21 used on the surface thereof when performing alignment (position measurement or shape measurement) of the mold 8.

  The application unit 5 is installed in the vicinity of the mold holding mechanism 3, and applies a resin (uncured resin) 15 onto a substrate-side pattern as a pattern formation region existing on the wafer 11. Here, the resin 15 is an ultraviolet curable resin (photo curable resin, imprint material) having a property of being cured by receiving the ultraviolet light 9 and is appropriately selected according to various conditions such as a semiconductor device manufacturing process. Further, the amount of the resin 15 discharged from the discharge nozzle of the coating unit 5 is also appropriately determined depending on the desired thickness of the resin 15 formed on the wafer 11 and the density of the pattern to be formed.

  The mold heating mechanism (mold heating mechanism) 6 is thermally deformed by applying heat to the mold 8 to correct the shape of the pattern portion 8 a formed on the mold 8. Although not shown, the mold heating mechanism 6 includes a heating light source and an optical element (optical system) that adjusts the heating light 22 emitted from the heating light source to light suitable for heating the mold 8. . In addition, the mold heating mechanism 6 is configured so that, for example, the heating light 22 passes through the opening region 16 along the irradiation direction of the ultraviolet rays 9 in order to efficiently irradiate the pattern portion 8 a with the heating light 22. It is desirable to install in a direction perpendicular to the surface. Here, the heating light 22 may be light having a wavelength that is absorbed by the mold 8, and may be light having a wavelength in the infrared wavelength band, for example. The configuration of the mold heating mechanism 6 is not limited to the above configuration, and may be a mechanism including a heater that directly heats the mold 8, for example.

  The control unit 7 can control the operation and adjustment of each component of the imprint apparatus 1. The control unit 7 is configured by, for example, a computer, and is connected to each component of the imprint apparatus 1 via a line, and can control each component according to a program or the like. The controller 7 of this embodiment controls at least the operation of the mold heating mechanism 6 and the operation of the wafer stage 4 associated with the operation of the mold heating mechanism 6. The control unit 7 may be configured integrally with other parts of the imprint apparatus 1 (in a common casing), or separate from the other parts of the imprint apparatus 1 (in another casing). To).

  The imprint apparatus 1 also includes a first temperature measurement unit 23 that measures the temperature of the mold 8 held on the mold chuck 12 and a second temperature measurement unit 24 that measures the temperature of the wafer 11 held on the wafer chuck 19. With. In addition, the imprint apparatus 1 performs misalignment between the alignment mark formed on the wafer 11 and the alignment mark formed on the mold 8 in the X-axis and Y-axis directions during the imprint process. An alignment measurement system 30 for measuring is provided. The imprint apparatus 1 is extended from the base surface plate 31 on which the wafer stage 4 is placed, the bridge surface plate 32 that fixes the mold holding mechanism 3, and the base surface plate 31. A support column 33 that supports the bridge surface plate 32 is provided. Further, although not shown in the drawing, the imprint apparatus 1 includes a mold transport mechanism (a mold transport mechanism) that loads and unloads the mold 8 between the outside of the apparatus and the mold holding mechanism 3, and a wafer 11 that connects the outside of the apparatus to the wafer stage. 4 may be included.

  Next, imprint processing by the imprint apparatus 1 will be described. FIG. 4 shows a case where the imprint apparatus 1 uses the same mold 8 for a plurality of wafers 11 and imprints a plurality of substrate-side patterns existing on the wafers 11 as pattern formation regions (shots). It is a flowchart which shows the operation | movement sequence. First, when the operation sequence is started, the control unit 7 determines whether or not the mold 8 is mounted on the mold chuck 12 or needs to be replaced from one already mounted (step S100). Here, when it is determined that the mold is not mounted or the mold needs to be replaced (YES), the controller 7 causes the mold transport mechanism to mount or replace the mold 8 (step S101). At this time, the control unit 7 has a lower holding force (second holding force) than the holding force (first holding force) at the time of the main holding in the stamping step, which is a subsequent step, with respect to the mold chuck 12. The mold 8 is held. This temporary holding by the second holding force is to keep the mold 8 freely deformable by the mold heating mechanism 6 and hold it to such an extent that it will not fall off during this deformation. On the other hand, when it determines with the control part 7 not mounting and replacement | exchange of the mold 8 being required in step S100 (NO), it transfers to step S103. Next, the control unit 7 refers to the reference mark 21 on the wafer stage 4 by the alignment measurement system 30, and measures the shape of the pattern unit 8a formed on the mold 8 (step S102). Next, the control unit 7 selects the wafer 11 to be processed at this time and places it on the wafer chuck 19 by the substrate transfer mechanism (step S103).

  Next, the control unit 7 causes the alignment measurement system 30 to measure the shape of the substrate side pattern (step S104). FIG. 3 is a schematic plan view showing an example of the shape of the plurality of substrate-side patterns 40 existing on the wafer 11. In FIG. 3, there are substrate side patterns 40 on a total of 18 shots on the wafer 11. In particular, FIG. 3A shows a case where the deformation component of the distortion common to each substrate-side pattern 40 (the shape difference between the substrate-side pattern 40 and the pattern portion 8a) is a trapezoid. On the other hand, FIG. 3B shows a case where the deformation component of distortion common to each substrate side pattern 40 is a pincushion shape. As described above, the substrate-side pattern 40 on the wafer 11 carried into the imprint apparatus 1 may have a distortion having a certain deformation component due to the previous process in the article manufacturing process. Therefore, the control unit 7 measures the shapes of the plurality of substrate-side patterns 40 on the wafer 11 in step S103, and then calculates a distortion amount common to each substrate-side pattern 40 (step S105). The measurement of the shape of the substrate side pattern 40 may be performed at a measurement place (not shown) in the imprint apparatus 1 or prepared separately before the wafer 11 is carried into the imprint apparatus 1. It may be performed in advance by a measuring device.

  Next, the control unit 7 heats the mold 8 (pattern unit 8a) by the mold heating mechanism 6 based on the distortion amount calculated in step S104, and gives a temperature distribution, thereby forming the shape of the pattern unit 8a. Is corrected thermally (step S106). Here, the control unit 7 stops the application of the temperature distribution to the mold heating mechanism 6 and presses the pattern unit 8a and the resin 15 until the shape of the pattern unit 8a is the same as that of the substrate-side pattern 40. A temperature distribution is given so as to approach the shape. That is, in this operation sequence, the control unit 7 considers in advance that the pattern unit 8a is deformed due to, for example, natural heat dissipation after applying the temperature distribution in step S106 and before the stamping process in step S111. Then, the temperature distribution is given. Further, for example, it is assumed that the deformation component common to the substrate side pattern 40 is a trapezoid as shown in FIG. At this time, the control unit 7 generates a temperature distribution corresponding to the trapezoidal thermal deformation so that the shape of the pattern unit 8a matches the shape common to the substrate side pattern 40 during the pressing operation in the subsequent stamping process. The mold heating mechanism 6 is controlled so as to be applied to the mold 8. FIG. 4 is a schematic plan view showing how the shape of the pattern portion 8a changes during shape correction by the mold heating mechanism 6. As shown in FIG. For example, in the shape correction for the base formation shown in the upper part of FIG. 4, the mold heating mechanism 6 increases the temperature from one side (upper bottom in the figure) to the opposite side (lower bottom in the figure) or By giving a temperature gradient of temperature decrease, trapezoidal thermal deformation can be caused in the pattern portion 8a. The method of giving such a temperature distribution is the same even when the deformation component common to the substrate side pattern 40 is a pincushion shape as shown in FIG. That is, in this case, the mold heating mechanism 6 gives a temperature gradient of the temperature rise in the pair of side directions (upper bottom and lower bottom in the drawing) from the central portion of the pattern portion 8a, thereby winding the pattern portion 8a on the bobbin It is sufficient to cause thermal deformation of the shape. Further, even when the deformation component common to the substrate side pattern 40 is a higher-order deformation component such as a barrel shape or a bow shape other than the trapezoidal shape or the pincushion shape, the temperature distribution corresponding to the deformation component is represented by the pattern portion 8a. By applying to the above, higher-order shape correction of the pattern portion 8a can be performed.

  Next, the controller 7 thermally corrects the shape of the pattern portion 8a, and then holds the mold 8 with the first holding force (main hold) on the mold chuck 12 and stops the heating by the mold heating mechanism 6 ( Step S107). When the mold chuck 12 holds the mold 8 at this timing, the mold 8 is held while maintaining its deformed shape even when heating by the mold heating mechanism 6 is stopped. Here, the temperature of the mold 8 in a high temperature state is lowered to the same temperature as that in the apparatus by heat transfer. At this time, even if the mold 8 is permanently held by the mold chuck 12, the shape of the pattern portion 8a may be further deformed by the temperature of the mold 8 being lowered in this way. Therefore, in the present embodiment, the control unit 7 can cause the mold heating mechanism 6 to heat the mold 8 in consideration of re-deformation of the pattern unit 8a due to a subsequent decrease in the temperature of the mold 8. desirable.

  Next, the control unit 7 moves the wafer 11 by the wafer stage 4 so that the surface of the substrate-side pattern 40 is positioned at the application position by the application unit 5, and then applies the resin 15 by the application unit 5 as an application process. Apply (step S108). Thereafter, the control unit 7 moves the wafer 11 by using the wafer stage 4 so that the surface of the substrate side pattern 40 coated with the resin 15 is positioned at the position pressed against the pattern unit 8a. Note that this coating process may be performed before step S107 or after step S109 described below, or may be performed during the execution of step S107 or step S109, as long as it is before the stamping process, which is a subsequent process. Good.

  Next, the control unit 7 causes the first temperature measurement unit 23 and the second temperature measurement unit 24 to measure the temperatures of the mold 8 held by the mold chuck 12 and the wafer 11 held by the wafer chuck 19. (Step S109). Next, the control unit 7 refers to the measurement result obtained in step S109 and determines whether or not the temperature difference between the mold 8 and the wafer 11 is equal to or less than an allowable value (step S110). Here, when it is determined that the temperature difference is equal to or less than the allowable value (YES), the control unit 7 operates the mold driving mechanism 13 as a pressing process, and the resin on the pattern unit 8 a and the substrate side pattern 40. 15 is pressed (step S111). On the other hand, when it is determined in step S110 that the temperature difference is equal to or greater than the allowable value (NO), the control unit 7 waits until each temperature decreases, and then proceeds to step S109 to change the temperature difference. Re-measure. If the temperature difference between the mold 8 and the wafer 11 is small, heat transfer between the mold 8 (pattern part 8a) and the wafer 11 is difficult to occur in the following pressing process. Unnecessary thermal deformation can be suppressed. Therefore, it is desirable that the control unit 7 sets the allowable value of the temperature difference in a range from 0.0 degrees Celsius to 0.01 degrees Celsius in the step of determining the temperature difference in Step S110. Although not shown, the mold chuck 12 or the wafer chuck 19 is provided with a temperature control mechanism (temperature control unit) such as a heater for setting the temperature difference between the mold 8 and the wafer 11 to a permissible value or less during the stamping process. May be.

  Next, the control unit 7 mechanically deforms the mold 8 (pattern unit 8a) by the magnification correction mechanism 14 in a state where the pattern unit 8a and the resin 15 on the substrate side pattern 40 are pressed, so that the substrate side The deviation with respect to the pattern 40 is corrected (step S112). Since the distortion amount common to each substrate-side pattern 40 is thermally corrected by the mold heating mechanism 6 in step S107, here, the misalignment that cannot be corrected in step S107 is corrected. Next, the control unit 7 confirms whether or not the shape of the pattern unit 8a and the substrate-side pattern 40 is matched based on information from the alignment measurement system 30, and then, as a curing process, the light irradiation unit 2 emits ultraviolet rays 9 as a curing process. The resin 15 is cured by irradiation (step S113). Next, the control part 7 operates the mold drive mechanism 13 as a mold release process, and separates the pattern part 8a and the cured resin 15 on the substrate side pattern 40 (step S114).

  Next, the control unit 7 continues to determine whether or not there is a shot on which a pattern of the resin 15 is to be formed on the wafer 11 (step S115). Here, when the control unit 7 determines that there is a next shot to form a pattern (YES), the control unit 7 proceeds to step S106, and based on the distortion amount already calculated in step S105, the mold 8 Perform thermal correction of the shape. At this time, in the pattern formation for the next shot, the thermal correction of the shape of the mold 8 is not necessarily required again, and the shape of the mold 8 at the time of pattern formation in the previous shot may be maintained as it is. . In this case, the control unit 7 does not have to execute each process related to the thermal correction of the shape of the mold 8 in steps S106, S107, S109, and S110 in the pattern formation operation sequence for the next shot. . When the thermal correction of the shape of the mold 8 is performed again, it is preferable that the control unit 7 temporarily holds the mold 8 on the mold chuck 12 as in step S101. On the other hand, when the control unit 7 determines that there is no shot for forming a pattern (NO), the control unit 7 proceeds to the next step S116 and the imprint processing that has been placed on the wafer chuck 19 by the substrate transfer mechanism has been completed. The wafer 11 is collected (step S116). Next, the control unit 7 continues to determine whether there is a wafer on which a similar imprint process is to be performed (step S117). Here, when the control unit 7 determines that there is a wafer to be subjected to imprint processing (YES), the control unit 7 proceeds to step S103, and the wafer 11 that has been subjected to imprint processing, the wafer that is to be subjected to next processing, Replace. On the other hand, when it is determined that there is no wafer to be processed (NO), the control unit 7 ends the operation sequence.

  As described above, when the imprint apparatus 1 matches the shapes of the pattern portion 8a and the substrate-side pattern 40, the imprint apparatus 1 changes the shape of the pattern portion 8a to a higher-order deformation component by combining thermal correction and mechanical correction. This can be suitably corrected. At this time, when the mold heating mechanism 6 thermally corrects the pattern portion 8a, the shape can be more efficiently deformed by temporarily holding the mold 8. Further, the mold heating mechanism 6 stops the pattern distribution so that the shape of the pattern portion 8a approaches the shape of the substrate side pattern 40 after the application of the temperature distribution is stopped and before the pattern portion 8a and the resin 15 are pressed. A temperature distribution is given to 8a. Therefore, it is possible to cope in advance with unnecessary deformation other than during direct heating. Furthermore, since the temperature difference between the mold 8 and the wafer 11 is determined between the thermal correction by the mold heating mechanism 6 and the stamping process, the influence on the overlay accuracy during the imprint process can be minimized. it can.

  As described above, according to the present embodiment, it is possible to provide an imprint apparatus that is advantageous for improving overlay accuracy during imprint processing.

  In the operation sequence shown in FIG. 2, in step S <b> 105 after the mold 8 is temporarily held by the mold chuck 12, thermal shape correction of the mold 8 is performed by the mold heating mechanism 6 as shown in FIG. 1. . On the other hand, a mold heating mechanism is installed on a mold conveyance mechanism (not shown) or a conveyance path of the mold 8 by the mold conveyance mechanism, and the mold 8 is conveyed to the mold chuck 12 for thermal shape correction of the mold 8. It may be carried out before (including while being transported). In this case, in the operation sequence described above, the processes related to the mold 8 in steps S100 and S101 are performed after the processes related to the wafer 11 (substrate-side pattern 40) from steps S102 to S104. The application of the temperature distribution to the pattern portion 8a of the mold 8 is performed in advance based on the distortion amount obtained in step S104, and then the controller 7 completes the thermal shape correction by the mold transport mechanism. The molded mold 8 is conveyed to the mold chuck 12. Here, even during the period from the completion of the thermal shape correction to the mounting on the mold chuck 12, the temperature of the mold 8 may decrease and the shape may change. Therefore, it is desirable that the mold heating mechanism heats the mold 8 (giving a temperature distribution) in consideration of this temperature decrease in advance. In addition to such a configuration, for example, there may be a configuration in which a mold heating mechanism including a heater or the like is installed in the mold transport mechanism itself that transports the mold 8 to the mold chuck 12 from the outside of the apparatus. According to such a configuration, it is not necessary to arrange the mold heating mechanism 6 in the vicinity of the light irradiation unit 2 or the mold holding mechanism 3 in the imprint apparatus 1, which is advantageous in simplifying the apparatus configuration. Further, since the mold 8 is heated in advance before being conveyed, the imprint process by the imprint apparatus 1 can be shortened, and as a result, the throughput can be improved.

(Product manufacturing method)
A method for manufacturing a device (semiconductor integrated circuit element, liquid crystal display element, etc.) as an article includes a step of forming a pattern on a substrate (wafer, glass plate, film-like substrate) using the above-described imprint apparatus. Furthermore, the manufacturing method may include a step of etching the substrate on which the pattern is formed. In the case of manufacturing other articles such as patterned media (recording media) and optical elements, the manufacturing method may include other processes for processing a substrate on which a pattern is formed instead of etching. The method for manufacturing an article according to the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.

  As mentioned above, although preferable embodiment of this invention was described, this invention is not limited to these embodiment, A various deformation | transformation and change are possible within the range of the summary.

DESCRIPTION OF SYMBOLS 1 Imprint apparatus 6 Mold heating mechanism 7 Control part 8 Mold 8a Pattern part 11 Wafer 13 Mold drive mechanism 15 Resin 23 1st temperature measurement part 24 2nd temperature measurement part 40 Substrate side pattern

Claims (10)

An imprint apparatus for forming a cured resin pattern on the substrate by molding and curing an uncured resin on the substrate with a mold,
A drive mechanism that moves at least one of the mold or the substrate, and presses the pattern portion formed on the mold and the uncured resin;
A mold heating mechanism that heats the mold and deforms the pattern portion by imparting a temperature distribution to the mold;
A temperature measurement unit for measuring the temperature of the mold and the substrate;
Pre-existing in the pattern formation region on the substrate where the pattern is to be formed between when the application of the temperature distribution is stopped and the pattern portion and the uncured resin are pressed against the mold heating mechanism Deform the shape of the pattern portion so as to approach the shape of the substrate side pattern to be performed, and
The pattern after being deformed with respect to the drive mechanism when the temperature difference between the mold and the substrate is not more than an allowable value with reference to the temperature measured by the temperature measurement unit. A control unit for pressing the unit and the uncured resin,
An imprint apparatus comprising:   The imprint apparatus according to claim 1, wherein there are a plurality of the pattern formation regions on the substrate.   The imprint apparatus according to claim 2, wherein the mold heating mechanism provides the temperature distribution based on a distortion amount common to the plurality of substrate-side patterns existing on the substrate.   The imprint apparatus according to claim 1, wherein the allowable value of the temperature difference is in a range of 0.0 degrees Celsius to 0.01 degrees Celsius.   The imprint apparatus according to claim 1, further comprising a temperature control unit configured to control a temperature of at least one of the mold and the substrate so that the temperature difference is equal to or less than the allowable value. A mold holding part for holding the mold;
The mold holding unit holds the mold with a first holding force while the mold heating mechanism imparts a temperature distribution to the mold, while the mold heating mechanism stops applying the temperature distribution. 6. The imprint apparatus according to claim 1, wherein the mold is held with a second holding force that is greater than the first holding force. A mold holding unit for holding the mold;
A mold conveying mechanism for carrying the mold in and out of the apparatus outside and the mold holding unit,
The imprint apparatus according to any one of claims 1 to 5, wherein the mold heating mechanism is installed on the mold transport mechanism or a transport path of the mold by the mold transport mechanism. A mold deformation mechanism for deforming the pattern portion by applying an external force or displacement to the mold;
8. The control unit according to claim 1, wherein the control unit deforms the pattern unit by the mold deformation mechanism after the pattern unit and the uncured resin are pressed by the driving mechanism. 9. The imprint apparatus described in 1. An imprint method in which an uncured resin on a substrate is molded and cured by a mold to form a cured resin pattern on the substrate,
The substrate on which the pattern is to be formed after the application of the temperature distribution to the mold is stopped until the pattern portion formed on the mold and the uncured resin are pressed. A step of deforming the shape of the pattern portion so as to approach the shape of the substrate side pattern existing in advance in the upper pattern formation region;
Referring to the temperature of the mold and the substrate, and when the temperature difference between the mold and the substrate is an allowable value or less, pressing the pattern portion after deformation and the uncured resin; and
The imprint method characterized by including. Forming a resin pattern on a substrate using the imprint apparatus according to any one of claims 1 to 8 or the imprint method according to claim 9;
Processing the substrate on which the pattern is formed in the step;
A method for producing an article comprising:

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