JP2017139268A - Imprint device and method of manufacturing article - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an imprint device which is advantageous in overlapping accuracy between a mold and a substrate and throughput.SOLUTION: A control unit 7, in imprint processing, controls a chuck 19 so as to change the suction force to a substrate 11 from the first suction force to the second suction force smaller than the first suction force when controlling a heating unit 6 so that a deviation measured by a measurement unit 22 falls within an allowable range, controls the chuck 19 so that the suction force to the substrate 11 from the second suction force to the third suction force larger than the second suction force in the state where the deviation measured by the measurement unit 22 falls within the allowable range by control of the heating unit 6, and controls a hardening unit so as to harden an imprint material 14 in the state where the deviation falls within the allowable range by control of the heating unit and the chuck 19 suctions the substrate 11 with the third suction force.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an imprint apparatus and an article manufacturing method.

  The demand for miniaturization of semiconductor devices, MEMS, etc. has progressed, and in addition to conventional photolithography technology, attention has been focused on microfabrication technology that forms an imprint material on a substrate with a mold and forms a pattern of the imprint material on the substrate. Has been. Such a technique is called an imprint technique, and can form a fine structure on the order of several nanometers on a substrate.

  As one of the imprint techniques, for example, there is a photocuring method. In an imprint apparatus employing a photocuring method, first, an uncured imprint material is supplied (applied) to a shot region of a substrate. Next, the mold is brought into contact with (pressed on) the uncured imprint material supplied to the shot region. Then, in a state where the imprint material and the mold are in contact with each other, the imprint material is irradiated with light (for example, ultraviolet rays) and cured, and the mold is separated from the cured imprint material, thereby imprint material on the substrate. Pattern is formed.

  In general, a substrate subjected to such an imprint process undergoes a heat treatment in a film forming process such as sputtering in a device manufacturing process. As a result, the substrate may be enlarged or reduced, and the pattern shape (or size) may change in two directions orthogonal to each other in the plane. Therefore, in the imprint apparatus, when the imprint material on the substrate is brought into contact with the mold, it is necessary to match the shape of the pattern (substrate side pattern) formed in advance on the substrate with the shape of the mold pattern. is there.

  As a technique for matching the shape of the substrate side pattern and the shape of the mold pattern, an imprint apparatus including a unit that deforms the mold (pattern) by applying an external force to the outer periphery of the mold has been proposed (see Patent Document 1). ). However, in the imprint apparatus disclosed in Patent Document 1, for example, if the mold material is quartz, the Poisson's ratio is 0.16. Therefore, if one end of the mold is compressed in a certain axial direction, the mold is perpendicular to the axis. One end of the mold in the direction of expansion expands. When such a Poisson's ratio-dependent deformation occurs in the mold, especially when it is desired to deform the mold into a trapezoidal shape, the in-plane of the mold is difficult to deform linearly, which may affect the overlay accuracy. is there.

  Therefore, a technique for correcting the shape of the mold without causing deformation of the mold depending on the Poisson's ratio has been proposed (see Patent Document 2). Patent Document 2 discloses a technique for irradiating a mold with light and thermally deforming the mold by absorption heat (heating) to match the shape of the substrate-side pattern with the shape of the mold pattern.

Special table 2008-504141 International Publication No. 2009/153925

  Considering the case where the mold material is quartz and the substrate material is silicon, the thermal expansion coefficient of quartz is 0.51 ppm, and the thermal expansion coefficient of silicon is 2.4 ppm. The thermal expansion coefficient is different by one digit. In the technique disclosed in Patent Document 2, when the heated mold is brought into contact with the imprint material on the substrate, the heat of the mold is transmitted to the substrate. At that time, although the substrate is held by the chuck, it is considered that the substrate (surface) is greatly deformed because of a relatively large coefficient of thermal expansion. Therefore, with the technique disclosed in Patent Document 2, it is difficult to improve the overlay accuracy between the substrate-side pattern and the mold pattern.

  Also, when the mold is deformed by heating, since it takes time to change the shape of the target pattern after heating the mold, compared to the case of deforming the mold by applying an external force to the outer periphery of the mold, Throughput decreases.

  The present invention has been made in view of the above-described problems of the prior art, and an exemplary object thereof is to provide an imprint apparatus that is advantageous in terms of overlay accuracy and throughput between a mold and a substrate.

  In order to achieve the above object, an imprint apparatus according to one aspect of the present invention is an imprint apparatus that performs an imprint process in which an imprint material on a substrate is molded with a mold to form a pattern on the substrate. A chuck for adsorbing the substrate, a measuring unit for measuring a relative deviation between the mold and the substrate, a heating unit for deforming the substrate by heating the substrate, and an imprint on the substrate A curing unit that cures the material, and a control unit that controls the imprint process, and the control unit allows the deviation measured by the measurement unit to fall within an allowable range in the imprint process. When controlling the heating unit, the chuck is controlled so that the suction force on the substrate is changed from the first suction force to a second suction force smaller than the first suction force. In a state where the deviation measured by the measurement unit by the control of the heating unit is within the allowable range, the suction force on the substrate is changed from the second suction force to a third suction force larger than the second suction force. The chuck is controlled to be changed, and the imprint material is cured in a state where the deviation is within the allowable range by the control of the heating unit and the chuck is adsorbing the substrate with the third adsorption force. The curing portion is controlled as described above.

  Further objects and other aspects of the present invention will become apparent from the preferred embodiments described below with reference to the accompanying drawings.

  According to the present invention, for example, it is possible to provide an imprint apparatus that is advantageous in terms of overlay accuracy and throughput between a mold and a substrate.

It is the schematic which shows the structure of the imprint apparatus as 1 side surface of this invention. It is a top view which shows the structure of the board | substrate chuck | zipper of the imprint apparatus shown in FIG. 3 is a flowchart for explaining imprint processing in the imprint apparatus shown in FIG. 1. It is a figure for demonstrating S118 (correction | amendment of the shape of a board | substrate) shown in FIG. It is a figure for demonstrating S120 (hardening of the imprint material) shown in FIG. 3 is a flowchart for explaining imprint processing in the imprint apparatus shown in FIG. 1. It is a figure for demonstrating S122A (hardening of the imprint material) shown in FIG.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of the invention will be described with reference to the accompanying drawings. In addition, in each figure, the same reference number is attached | subjected about the same member and the overlapping description is abbreviate | omitted.

<First Embodiment>
FIG. 1 is a schematic diagram showing a configuration of an imprint apparatus 1 as one aspect of the present invention. The imprint apparatus 1 is a lithographic apparatus that is used for manufacturing a device such as a semiconductor device as an article, and performs an imprint process in which an imprint material on a substrate is formed with a mold to form a pattern on the substrate. In this embodiment, the imprint apparatus 1 employs a photocuring method in which a photocurable imprint material on a substrate is irradiated with light (for example, ultraviolet rays) to be cured. In FIG. 1, the direction along the optical axis of the irradiating unit that irradiates the imprint material on the substrate is defined as the Z axis, and the directions perpendicular to each other in a plane perpendicular to the Z axis are defined as the X axis and the Y axis. To do.

  The imprint apparatus 1 includes a curing unit 2, a mold holding unit 3, a substrate stage 4, a supply unit 5, a heating unit 6, a control unit 7, a magnification correction unit 18, and an alignment measurement unit 22. . The imprint apparatus 1 also includes a base surface plate 24 on which the substrate stage 4 is placed, a bridge surface plate 25 that fixes the mold holding unit 3, and a column that is disposed on the base surface plate 24 and supports the bridge surface plate 25. 26. Further, the imprint apparatus 1 conveys the mold 8 from the outside of the imprint apparatus 1 to the mold holding unit 3 and a substrate 11 from the outside of the imprint apparatus 1 to the substrate stage 4. And a substrate transfer unit (not shown).

  In the imprint process, the curing unit 2 irradiates the imprint material 14 on the substrate with ultraviolet rays 9 as light through the mold 8. The curing unit 2 includes a light source and an optical element that adjusts the ultraviolet rays 9 emitted from the light source so as to be suitable for the imprint process. In this embodiment, since the photocuring method is adopted, the curing unit 2 includes an irradiation unit (light source or optical element) for irradiating ultraviolet rays. However, when the thermosetting method is employed, the curing unit 2 includes a heat source unit for heating the thermosetting imprint material instead of the irradiation unit.

  The mold 8 has a rectangular outer shape, and includes a pattern (a concavo-convex pattern to be transferred to the substrate 11 such as a circuit pattern) 8 a formed in a three-dimensional shape on the surface facing the substrate 11. The mold 8 is made of a material (such as quartz) that can transmit ultraviolet rays 9.

  The mold 8 includes a cavity (concave portion) 8b for facilitating deformation of the mold 8 (pattern 8a) on the surface opposite to the surface facing the substrate 11 (incident surface of the ultraviolet light 9). The cavity 8b has a circular planar shape, and its thickness (depth) is appropriately set according to the size and material of the mold 8. The cavity 8b communicates with an opening 17 provided in the mold holding unit 3, and a light transmissive member 13 is disposed in the opening 17 so that a space 12 surrounded by a part of the opening 17 and the cavity 8b is a sealed space. Has been. The pressure in the space 12 is adjusted by a pressure adjusting device (not shown). For example, when the mold 8 and the imprint material 14 on the substrate are brought into contact with each other, the pressure in the space 12 is made higher than the external pressure by the pressure adjusting device, and the pattern 8a (the surface on which the pattern 8a is formed) is placed on the substrate 11. Is deformed into a convex shape (bent). Thereby, since it contacts the imprint material 14 on a board | substrate from the center part of the pattern 8a, it is suppressed that gas (air) is confined between the pattern 8a and the imprint material 14, and the imprint material is contained in the pattern 8b. 14 can be efficiently filled.

  The mold holding unit 3 includes a mold chuck 15 that attracts and holds the mold 8 by vacuum suction force or electrostatic force, and a mold driving unit 16 that holds the mold chuck 15 and moves the mold 8 (mold chuck 15). The mold chuck 15 and the mold driving unit 16 have an opening 17 at the center (inside) so that the ultraviolet light 9 from the curing unit 2 is irradiated to the imprint material 14 on the substrate.

  The magnification correction unit 18 is disposed on the mold chuck 15. The magnification correction unit 18 corrects (deforms) the shape of the mold 8 (pattern 8 a) by applying an external force or displacement to the side surface of the mold 8. When the magnification correction unit 18 deforms the mold 8, the shape of the pattern 8b of the mold 8 can be matched with the shape of the pattern (substrate side pattern) formed in advance on the substrate.

  The mold driving unit 16 selectively performs pressing (imprinting process) of the mold 8 on the imprint material 14 on the substrate or separation (release processing) of the mold 8 from the imprint material 14 on the substrate. Next, the mold 8 is moved in the Z-axis direction. The actuator applicable to the mold drive unit 16 includes, for example, a linear motor and an air cylinder. The mold driving unit 16 may be composed of a plurality of driving systems such as a coarse driving system and a fine driving system in order to position the mold 8 with high accuracy. The mold driving unit 16 may be configured to be able to move the mold 8 not only in the Z-axis direction but also in the X-axis direction and the Y-axis direction. Further, the mold driving unit 16 may be configured to have a tilt function for adjusting the position of the mold 8 in the θ (rotation around the Z axis) direction and the tilt of the mold 8.

  The imprint apparatus 1 may perform the stamping process and the mold releasing process by moving the mold 8 in the Z-axis direction as in the present embodiment. However, the substrate 11 (substrate stage 4) is moved in the Z-axis direction. You may implement | achieve by moving. Further, the stamping process and the releasing process may be realized by relatively moving both the mold 8 and the substrate 11 in the Z-axis direction.

  The substrate 11 includes, for example, a single crystal silicon substrate or an SOI (Silicon On Insulator) substrate. An imprint material 14 formed by the pattern 8 a of the mold 8 is supplied (applied) to the substrate 11.

  The substrate stage 4 can move while holding the substrate 11. In a state where the mold 8 and the imprint material 14 on the substrate are in contact with each other, the alignment (alignment) between the mold 8 and the substrate 11 is performed by moving the substrate stage 4. The substrate stage 4 includes a substrate chuck 19 that attracts and holds the substrate 11 by a vacuum adsorption force, and a substrate driving unit 20 that mechanically holds the substrate chuck 19 and is movable in the XY plane. The substrate chuck 19 is provided with a reference mark 21 used for positioning.

  The substrate chuck 19 includes a plurality of adsorption regions that adsorb the substrate 11 (regions on the back surface thereof). Each of the plurality of adsorption regions is connected to a pressure adjusting device (not shown) for adjusting (depressurizing) the pressure between the substrate 11 and the adsorption region, and under the control of the control unit 7, the adsorption force to the substrate 11. (Pressure value) can be controlled independently (changeable). In the present embodiment, as shown in FIG. 2A, the substrate chuck 19 includes a first suction region 19 a that sucks a ring-shaped region corresponding to the outer peripheral region of the substrate 11, and an inner side of the outer peripheral region of the substrate 11. And a plurality of second adsorption regions 19b that adsorb a plurality of lattice-shaped regions corresponding to the regions. However, the substrate chuck 19 is not limited to the configuration shown in FIG. 2A, and may include, for example, a plurality of suction regions 19c arranged in a grid as shown in FIG. 2B. However, as shown in FIG. 2C, a plurality of suction regions 19d arranged concentrically may be included. Further, the number (number of divisions) of the suction regions of the substrate chuck 19 is not particularly limited, and may be an arbitrary number.

  An actuator applicable to the substrate driving unit 20 includes, for example, a linear motor. The substrate drive unit 20 may be composed of a plurality of drive systems such as a coarse motion drive system and a fine motion drive system in each direction of the X axis and the Y axis in order to position the substrate 11 with high accuracy. . The substrate driving unit 20 may be configured to be able to move the substrate 11 not only in the X-axis direction and the Y-axis direction but also in the Z-axis direction. Further, the substrate driving unit 20 may be configured to have a tilt function for adjusting the position of the substrate 11 in the θ (rotation around the Z axis) direction and the tilt of the substrate 11.

  The supply unit 5 supplies (applies) the uncured imprint material 14 to the substrate 11. In this embodiment, the imprint material 14 is an ultraviolet curable resin material having a property of being cured by being irradiated with the ultraviolet rays 9. The imprint material 14 is selected according to various conditions such as a semiconductor device manufacturing process. The supply amount of the imprint material 14 supplied from the supply unit 5 is, for example, the pattern thickness (residual film thickness) of the imprint material 14 formed on the substrate 11 or the pattern density of the imprint material 14. Is set according to

  The heating unit 6 heats the substrate 11 in order to deform (correct the shape) the shape of the substrate 11 held on the substrate stage 4, specifically, the substrate-side pattern of the substrate 11. In the present embodiment, the heating unit 6 includes a heating light source, and heats the substrate 11 by irradiating the substrate 11 with light through the mold 8. The heating light source emits light having a wavelength in a specific wavelength band that is absorbed by the substrate 11 and does not cure (photosensitize) the imprint material 14, for example, light having a wavelength in the wavelength band of 400 nm to 2000 nm. Good. In particular, from the viewpoint of heating efficiency, it is better to use light having a wavelength in the wavelength band of 500 nm to 800 nm. Furthermore, it is good also as an ultraviolet-ray which has a wavelength in the wavelength range | band where the imprint material 14 is hard to expose among the ultraviolet-rays of the wavelength range 200nm -400nm which the imprint material 14 exposes. In addition to the heating light source, the heating unit 6 includes a spatial light modulator and an optical system that adjust light from the heating light source so as to be suitable for heating the substrate 11. The spatial light modulator forms a dose distribution on the substrate for correcting the shape of the substrate-side pattern of the substrate 11 under the control of the control unit 7. In the heating unit 6, for example, a heater for directly heating the substrate 11 may be provided in the substrate chuck 19 instead of the heating light source.

  The alignment measuring unit 22 is disposed in the opening 17 of the mold chuck 15 and the mold driving unit 16 and measures a relative deviation between the mold 8 and the substrate 11. The alignment measurement unit 22 includes, for example, an alignment scope and a sensor, and measures a positional deviation between the alignment mark formed on the mold 8 and the alignment mark formed on the substrate 11 in each direction of the X axis and the Y axis.

  The control unit 7 is configured by a computer including a CPU, a memory, and the like, and controls the entire imprint apparatus 1 according to a program stored in the memory. The control unit 7 controls the imprint process for forming a pattern on the substrate by controlling the operation and adjustment of each unit of the imprint apparatus 1. The control unit 7 may be configured integrally with other parts of the imprint apparatus 1 (in a common casing), or separate from other parts of the imprint apparatus 1 (in a separate casing). It may be configured.

  With reference to FIG. 3, the imprint process in the imprint apparatus 1 will be described. As described above, the imprint process is performed by the control unit 7 controlling the respective units of the imprint apparatus 1 in an integrated manner. Here, using the same mold 8 for a plurality of substrates 11, an area including a substrate-side pattern formed in advance on the substrate is used as an area where a pattern is to be formed, that is, an imprint process is performed as a shot area. Assumed to be performed.

  In S <b> 102, the mold 8 is carried into the imprint apparatus 1 by the mold conveyance unit, and the mold 8 is held by the mold holding unit 3, specifically, the mold chuck 15.

  In step S <b> 104, the substrate transport unit carries the substrate 11 to be processed in the imprint process into the imprint apparatus 1 and holds the substrate 11 on the substrate stage 4, specifically, the substrate chuck 19. Here, for all the suction regions in the substrate chuck 19, the suction force with respect to the substrate 11 is set to the first suction force that is the suction force capable of fixing the substrate 11.

  In S <b> 106, the substrate stage 4 is moved so that the substrate 11 is located at the supply position of the supply unit 5, and the imprint material 14 is applied to the target shot region (target region where imprint processing is performed) of the substrate 11 by the supply unit 5. Supply (supply process).

  In S108, the substrate stage 4 is moved so that the substrate 11 on which the imprint material 14 has been supplied to the target shot area is positioned at a stamping position where the mold 8 is pressed against the imprint material 14 on the substrate.

  In S110, the mold drive unit 16 lowers the mold 8 in the Z-axis direction to bring the mold 8 into contact with the imprint material 14 on the substrate (imprinting process).

  In step S112, alignment measurement is performed in a state where the mold 8 and the imprint material 14 on the substrate are in contact with each other. Specifically, first, the alignment measurement unit 22 simultaneously observes the alignment mark formed on the mold 8 and the alignment mark formed on the substrate 11, and based on the observed mark image, the mold 8 and the substrate. The relative deviation from 11 is measured. Here, the relative displacement between the mold 8 and the substrate 11 is the displacement in the X, Y, and θ directions at the local position between the mold 8 and the substrate 11, and the pattern region of the mold 8 and the substrate 11. This includes a shift in the shape of the shot area. The control unit 7 is necessary to match the shape of the pattern 8 a of the mold 8 and the shape of the substrate side pattern (shot region) of the substrate 11 based on the relative displacement between the mold 8 and the substrate 11. A shape correction amount is calculated. Here, the shape correction amount includes the shape correction amount (mold shape correction amount) of the mold 8, that is, the pattern 8a, and the shape correction amount (substrate shape correction amount) of the substrate 11, that is, the substrate side pattern.

  In S114, based on the mold shape correction amount obtained in S112, the magnification correction unit 18 gives a deformation amount to the mold 8, and mechanically corrects the shape of the pattern 8a of the mold 8.

  In S116, the suction force of the substrate chuck 19 on the substrate 11 is partially weakened. Specifically, among the plurality of suction regions in the substrate chuck 19, the suction region that sucks a region corresponding to the target shot region (that is, disposed in the vicinity of the back surface on the opposite side of the substrate side pattern) 11 is changed from the first suction force to the second suction force. For example, it is possible to change the suction force of the suction region to the second suction force by lowering the pressure value of the suction region that sucks the region corresponding to the target shot region. Here, the second adsorption force is an adsorption force smaller than the first adsorption force, and may be zero. When the second suction force is set to zero, the suction of the substrate 11 by the suction region that sucks the region corresponding to the target shot region may be stopped (released). In the present embodiment, in the substrate chuck 19 shown in FIG. 2A, the second suction region that maintains the suction force of the first suction region 19 a at the first suction force and sucks the region corresponding to the target shot region. The suction force of 19b is changed from the first suction force to the second suction force.

  In S118, based on the substrate shape correction amount obtained in S112, a temperature distribution is given to the substrate 11 by the heating unit 6 (that is, the substrate 11 is heated), and the shape of the substrate-side pattern of the substrate 11, That is, the shape of the target shot area is thermally corrected. Here, in the target shot region of the substrate 11 heated by the heating unit 6, the suction force to the substrate 11 is weakened in S <b> 116. Therefore, the deformation of the target shot area of the substrate 11 is not restricted by the substrate chuck 19 and the deformation thereof is promoted, and the amount of heat required for the deformation can be reduced.

  Although FIG. 3 shows that the alignment measurement is performed only in S112, actually, in S114 and S118, it is performed in parallel with the correction of the shape of the mold 8 and the correction of the shape of the substrate 11. Yes. Further, based on the alignment measurement performed after the correction of the shape of the mold 8 (S114), the substrate shape correction amount used in the correction of the shape of the substrate 11 (S118) may be calculated. Furthermore, the shape correction of the mold 8 (S114) and the shape correction of the substrate 11 (S118) may be repeatedly performed while performing alignment measurement. At this time, the position (shift and rotation component) of the substrate 11 with respect to the mold 8 can be corrected by sequentially moving the substrate stage 4.

  In S120, in a state where the mold 8 and the imprint material 14 on the substrate are in contact with each other, the curing unit 2 irradiates the imprint material 14 with ultraviolet rays 9 through the mold 8, and the imprint material 14 is removed. Curing (curing treatment).

  Here, with reference to FIGS. 4A to 4E, the correction of the shape of the substrate 11 (S118) will be specifically described. As described above, the heating unit 6 that heats the substrate 11 includes a light source for heating that emits light having a wavelength that does not cure the imprint material 14, for example, infrared rays. Light from the heating light source is irradiated to the substrate 11 through the mold 8 via the spatial light modulator. The spatial light modulator includes, for example, a device in which a large number of mirrors are integrated (digital mirror device), and has a configuration in which reflection of light can be controlled by each mirror. By controlling the reflection or non-reflection of light by each of a large number of mirrors of the spatial light modulator by the control unit 7, it becomes possible to form an irradiation amount distribution on the substrate, and an arbitrary temperature distribution on the substrate. Can be formed.

  The substrate-side pattern of the substrate 11 is slightly deformed through a semiconductor process. The deformation of the substrate side pattern is roughly classified into a magnification component, a parallelogram formation, and a base formation, and is often configured by a combination thereof. In order to correct such a deformation component, it is necessary to form a temperature distribution for obtaining a necessary shape correction amount in a region including the substrate side pattern of the substrate 11 and a region in the vicinity thereof.

  In this embodiment, the mold 8 is made of quartz, and the light that has passed through the spatial light modulator passes through the mold 8 and is irradiated onto the substrate 11. Light, for example, infrared rays applied to the substrate 11 is hardly absorbed by the mold 8 and does not cure the imprint material 14.

  As shown in FIG. 4A, consider a case where the shape of the substrate-side pattern 31 including only the base formation as a deformation component is corrected. The board | substrate side pattern 31 contains the part for base formation only in the Y-axis direction, and the X-axis direction is not deform | transforming. In order to correct such deformation of the substrate side pattern 31, as shown in FIG. 4B, the dose distribution 32 is formed only in the Y-axis direction, and the dose is made uniform in the X-axis direction. What is necessary is just to irradiate the board | substrate 11 with light.

  When the substrate 11 (substrate-side pattern 31) is irradiated with light forming the irradiation amount distribution 32, a temperature distribution 33 as shown in FIG. 4C is formed on the substrate. Due to the temperature distribution 33 formed on the substrate, a deformation amount 34 as shown in FIG. 4D is given to the substrate side pattern 31 (that is, the substrate side pattern 31 is thermally deformed). Thereby, the board | substrate side pattern 31 can be correct | amended in a shape as shown in FIG.4 (e).

  With reference to FIG. 5, the curing (S120) of the imprint material 14 on the substrate will be specifically described. FIG. 5 shows a control timing chart of the alignment measuring unit 22, the heating unit 6, and the curing unit 2 in this embodiment, and a change in the relative deviation amount between the mold 8 and the substrate 11 measured by the alignment measuring unit 22. Yes.

  As shown in FIG. 5, when the alignment measurement unit 22 starts measuring the relative displacement between the mold 8 and the substrate 11, the control unit 7 is necessary for deforming the substrate-side pattern of the substrate 11 to the target value. A substrate shape correction amount is calculated. And the control part 7 controls the heating part 6, and irradiates light to the board | substrate 11 so that the irradiation amount distribution corresponding to a board | substrate shape correction amount may be formed on a board | substrate (the board | substrate 11 is heated).

  Even while the substrate 11 is irradiated with light from the heating unit 6, the alignment measurement unit 22 measures the relative deviation between the mold 8 and the substrate 11. The control unit 7 controls the curing unit 2 at the timing when the deviation measured by the alignment measurement unit 22 reaches the target value, and cures the imprint material 14 on the substrate. In other words, the curing of the imprint material 14 by the curing unit 2 is started so that the timing at which the deviation measured by the alignment measurement unit 22 reaches the target value matches the timing at which the curing of the imprint material 14 is completed. Control the timing. Thereby, the deformation | transformation of the board | substrate side pattern of the board | substrate 11, ie, a shot area | region, is fixed, and the shape of the pattern 8a of the mold 8 and the shape of the board | substrate side pattern of the board | substrate 11 can be match | combined.

  Further, as shown in FIG. 5, the heating unit 6 is controlled so as to stop the heating of the substrate 11 at the timing when the deviation measured by the alignment measuring unit 22 reaches the allowable range by the control of the heating unit 6. Thereby, the thermal deformation of the substrate-side pattern of the substrate 11 is continued, and the relative deviation between the shape of the pattern 8a of the mold 8 and the shape of the substrate-side pattern of the substrate 11 is suppressed from exceeding an allowable range. can do.

  In the present embodiment, the control unit 7 controls the curing unit 2 to cure the imprint material 14 on the substrate at the timing when the deviation measured by the alignment measurement unit 22 reaches the target value. It is not limited to. For example, the curing unit 2 may be controlled so that the imprint material 14 on the substrate is cured at a timing when the deviation measured by the alignment measurement unit 22 reaches an allowable range set with respect to the target value. The allowable range for the target value is determined based on the overlay accuracy specification between the substrate-side pattern of the substrate 11 and the pattern 8 a of the mold 8.

  Moreover, the alignment measurement part 22 may have a sensitivity with respect to the light irradiated to the board | substrate 11 from the heating part 6. FIG. In such a case, an error in relative displacement between the mold 8 and the substrate 11 measured by the alignment measurement unit 22 becomes large while the substrate 11 is irradiated with light from the heating unit 6. Accordingly, the substrate 11 is heated by intermittently irradiating the substrate 11 with light from the heating unit 6, and the relative displacement between the mold 8 and the substrate 11 during a period when the heating unit 6 does not irradiate the substrate 11 with light. The alignment measurement unit 22 may be controlled so as to measure.

  Moreover, the alignment measurement part 22 may have a sensitivity with respect to the light irradiated to the imprint material 14 on a board | substrate from the hardening part 2. FIG. In such a case, an error in relative deviation between the mold 8 and the substrate 11 measured by the alignment measuring unit 22 increases while light is irradiated from the curing unit 2 to the imprint material 14 on the substrate. Therefore, as shown in FIG. 5, the alignment measurement unit 22 is set so that the measurement of the relative displacement between the mold 8 and the substrate 11 is completed at the timing when the imprint material 14 on the substrate is irradiated with light from the curing unit 2. Control is sufficient.

  In practice, a certain amount of time is required until the imprint material 14 on the substrate is irradiated with light from the curing unit 2 until the imprint material 14 is completely cured. Therefore, the imprint material 14 on the substrate is irradiated with light at a timing before the relative displacement between the mold 8 and the substrate 11 measured by the alignment measuring unit 22 reaches the allowable range. Is also possible. In such a case, the alignment measurement unit 22 measures the relative deviation between the mold 8 and the substrate 11 even while the imprint material 14 on the substrate is irradiated with light from the curing unit 2. Is required. Accordingly, the imprint material 14 on the substrate is intermittently irradiated with light from the curing unit 2, and the relative deviation between the mold 8 and the substrate 11 is measured during a period when the curing unit 2 does not irradiate the substrate 11 with light. The alignment measurement unit 22 may be controlled to do so.

  Further, even when the shape of the substrate-side pattern of the substrate 11 is not corrected, that is, when the substrate 11 is not heated by the heating unit 6, the mold 8 and the mold 8 are cured while the imprint material 14 on the substrate is cured. A relative deviation from the substrate 11 may be measured. Thereby, when the relative deviation between the mold 8 and the substrate 11 exceeds the allowable range, the history can be managed as imprint processing failure.

  As a method different from the present embodiment, the imprint material 14 on the substrate is cured at a timing (steady state) in which the amount of heating of the substrate 11 by the heating unit 6 and the amount of heat escaping from the substrate 11 to the substrate chuck 19 are balanced. It is also possible. However, since it takes time until the substrate 11 is in a steady state, the throughput is lowered. On the other hand, in the present embodiment, even if the state of the substrate 11 is an unsteady state, the alignment measurement is performed, and the imprint on the substrate is in a state where the relative deviation between the mold 8 and the substrate 11 is within an allowable range. The material 14 is cured. Therefore, the imprint apparatus 1 can perform an imprint process that is advantageous for the overlay accuracy and throughput of the mold 8 and the substrate 11. The state of the substrate 11 includes a change in the temperature of the substrate 11 and a change in the shape of the substrate 11.

  Returning to FIG. 3, in S <b> 122, the suction force for the substrate 11 partially weakened in S <b> 116 is changed from the second suction force to a third suction force larger than the second suction force. In the present embodiment, among the plurality of suction regions in the substrate chuck 19, the suction force for the substrate 11 is returned from the second suction force to the first suction force for the suction region in which the suction force for the substrate 11 is weakened in S <b> 116. For example, it is possible to change the suction force of the suction region to the first suction force by increasing the pressure value of the suction region. Note that the change from the second suction force to the third suction force is not limited to returning to the first suction force, and the suction force for the substrate 11 is changed from the second suction force to a suction other than the first suction force. You may change to force. Further, different suction forces may be used for each of the plurality of suction regions in the substrate chuck 19.

  In S124, the mold drive unit 16 raises the mold 8 in the Z-axis direction, and separates the mold 8 from the cured imprint material 14 on the substrate (substrate-side pattern) (mold release process).

  In S126, it is determined whether imprint processing has been performed on all shot areas of the substrate 11. If the imprint process has not been performed on all shot areas of the substrate 11, the shot area on which the imprint process has not been performed is set as the target shot area, and the process proceeds to S106. On the other hand, when the imprint process is performed on all the shot areas of the substrate 11, the process proceeds to S128.

  In S <b> 128, the substrate 11 subjected to the imprint process on all shot areas is unloaded from the imprint apparatus 1 by the substrate transport unit.

  In S130, it is determined whether imprint processing has been performed on all the substrates 11. When the imprint process has not been performed on all the substrates 11, the process proceeds to S <b> 104 in order to carry the substrate 11 on which the imprint process has not been performed into the imprint apparatus 1. On the other hand, when the imprint process is performed on all the substrates 11, the process proceeds to S132.

  In S132, the mold 8 held by the mold chuck 15 is unloaded from the imprint apparatus 1 by the mold transport unit.

  In the present embodiment, the case where the substrate-side pattern of the substrate 11 held by the substrate chuck 19 includes a part for forming a base as a deformation component is described as an example. However, the present invention is not limited to this. For each substrate 11, the substrate-side pattern may include different deformation components. For example, when the substrate-side pattern of the substrate 11 includes a magnification component as a deformation component, a spatial light modulator is used so that a uniform temperature distribution is formed in the region including the substrate-side pattern and the region in the vicinity thereof. What is necessary is just to control irradiation amount distribution.

  Moreover, when forming temperature distribution with respect to the board | substrate 11 (board | substrate side pattern), you may use the light of the wavelength band which does not harden the imprint material 14 among the lights irradiated from the hardening part 2. FIG. In this case, for example, a wavelength band limiting filter that allows only light of an arbitrary wavelength to pass through may be provided in the curing unit 2. When the substrate 11 is heated, light in a wavelength band that does not cure the imprint material 14 is used. When the imprint material 14 is cured, light in a wavelength band that cures the imprint material 14 is used. do it.

  As described above, in the imprint apparatus 1 of the present embodiment, when the heating unit 6 is controlled so that the relative deviation between the mold 8 and the substrate 11 measured by the alignment measurement unit 22 is within an allowable range, the substrate 11 is changed from the first suction force to the second suction force. And the imprint material 14 on a board | substrate is hardened in the state in which the relative shift | offset | difference of the mold 8 and the board | substrate 11 is settled in the tolerance | permissible_range by control of the heating part 6. FIG. Therefore, the imprint apparatus 1 is advantageous in terms of overlay accuracy and throughput between the mold 8 and the substrate 11.

<Second Embodiment>
FIG. 6 is a flowchart for explaining the imprint process in the imprint apparatus 1. Since the imprint process in this embodiment is basically the same as that in the first embodiment, only different points will be described. The imprint process in the present embodiment is different from the first embodiment in that the imprint material 14 on the substrate is cured after returning the suction force to the substrate 11 partially weakened in S116. In other words, the order of S120 and S122 in the imprint process in the first embodiment is changed to S120A and S122A.

  In S120A, in a state where the relative displacement between the mold 8 and the substrate 11 measured by the alignment measuring unit 22 is within an allowable range, the suction force to the substrate 11 partially weakened in S116 is returned (third suction). Change to force). In the present embodiment, among the plurality of suction regions in the substrate chuck 19, the suction force on the substrate 11 is increased by increasing the pressure value of the suction region for the suction region in which the suction force on the substrate 11 is weakened in S <b> 116. 2. Change from 2 adsorption force to 1st adsorption force.

  In S122A, the relative displacement between the mold 8 and the substrate 11 is within an allowable range, and the substrate chuck 19 is adsorbing the substrate 11 with the first adsorption force. 14 is cured.

  With reference to FIG. 7, the curing (S122A) of the imprint material 14 on the substrate will be specifically described. FIG. 7 is a control timing chart of the alignment measuring unit 22, the heating unit 6, the substrate chuck 19 and the curing unit 2 in the present embodiment, and the relative shift amount between the mold 8 and the substrate 11 measured by the alignment measuring unit 22. It shows a change.

  As shown in FIG. 7, when the alignment measurement unit 22 starts measuring the relative displacement between the mold 8 and the substrate 11, the control unit 7 is necessary to deform the substrate side pattern of the substrate 11 to the target value. A substrate shape correction amount is calculated. And the control part 7 controls the heating part 6, and irradiates light to the board | substrate 11 so that the irradiation amount distribution corresponding to a board | substrate shape correction amount may be formed on a board | substrate (the board | substrate 11 is heated).

  Even while the substrate 11 is irradiated with light from the heating unit 6, the alignment measurement unit 22 measures the relative deviation between the mold 8 and the substrate 11. The control unit 7 controls the substrate chuck 19 at the timing when the deviation measured by the alignment measurement unit 22 reaches the target value, and adsorbs (re-adsorbs) the substrate 11 with the first adsorption force. By the substrate chuck 19 adsorbing the substrate 11, the corrected shape of the substrate side pattern can be maintained even if the heating of the substrate 11 by the heating unit 6 is stopped. Thereby, since the amount of temporal deformation of the substrate-side pattern of the substrate 11 can be suppressed, a margin can be provided for the timing to stop heating the substrate 11 and the timing to cure the imprint material 14 on the substrate. . Actually, there is a time difference from when the command is given from the control unit 7 to the substrate chuck 19 until the suction force is changed, so the timing of giving the command in consideration of the time difference or the mold 8 and the substrate 11 Therefore, it is necessary to control the target value (allowable range) of the relative deviation. In addition, when the heating of the substrate 11 is stopped, the substrate 11 starts to return to the initial temperature, so even if the substrate 11 is adsorbed by the substrate chuck 19, the substrate side pattern is actually slightly deformed. Therefore, in consideration of such deformation, an allowable range for the target value of the relative displacement between the mold 8 and the substrate 11 may be determined.

  In the present embodiment, as shown in FIG. 5, the adsorption force to the substrate 11 is obtained at a timing when the relative deviation between the mold 8 and the substrate 11 measured by the alignment measurement unit 22 by the control of the heating unit 6 becomes a target value. The first adsorption force is changed. Then, after the suction force on the substrate 11 is changed to the first suction force, the heating of the substrate 11 is stopped, and the imprint material 14 on the substrate is cured at the timing when the heating of the substrate 11 is stopped.

  In this embodiment, after the shape of the mold 8 (pattern 8a) is mechanically corrected (S114), the shape of the substrate 11 (substrate side pattern) is thermally corrected (S118). The shape of the mold 8 may be corrected after the shape is thermally corrected. In other words, after correcting the shape of the substrate side pattern of the substrate 11, the shape of the pattern 8a of the mold 8 is corrected by maintaining the shape of the substrate side pattern by sucking the substrate 11 by the substrate chuck 19. May be. At this time, the mold shape correction amount is calculated based on alignment measurement, substrate shape correction amount, and the like.

  In the present embodiment, the control unit 7 controls the substrate chuck 19 so that the substrate 11 is attracted by the first attracting force at the timing when the deviation measured by the alignment measuring unit 22 reaches the target value. It is not limited to. For example, the substrate chuck 19 may be controlled so that the substrate 11 is attracted by the first attracting force at a timing when the deviation measured by the alignment measuring unit 22 reaches an allowable range set with respect to the target value.

  As described above, in the imprint apparatus 1 of the present embodiment, when the heating unit 6 is controlled so that the relative deviation between the mold 8 and the substrate 11 measured by the alignment measurement unit 22 is within an allowable range, the substrate 11 is changed from the first suction force to the third suction force. Then, in a state where the relative displacement between the mold 8 and the substrate 11 is within the allowable range by the control of the heating unit 6, after changing the adsorption force on the substrate 11 from the second adsorption force to the first adsorption force, The imprint material 14 on the substrate is cured. Therefore, the imprint apparatus 1 is advantageous in terms of overlay accuracy and throughput between the mold 8 and the substrate 11.

<Third Embodiment>
A method for manufacturing a device (semiconductor device, magnetic storage medium, liquid crystal display element, etc.) as an article will be described. Such a manufacturing method includes a step of forming a pattern on a substrate (a wafer, a glass plate, a film-like substrate, etc.) using the imprint apparatus 1. The manufacturing method further includes a step of processing the substrate on which the pattern is formed. The processing step may include a step of removing the remaining film of the pattern. Further, it may include other known steps such as a step of etching the substrate using the pattern as a mask. The method for manufacturing an article in the present embodiment is advantageous in at least one of the performance, quality, productivity, and production cost of the article as compared with the conventional method.

  As mentioned above, although preferable embodiment of this invention was described, it cannot be overemphasized that this invention is not limited to these embodiment, A various deformation | transformation and change are possible within the range of the summary. For example, the present invention may appropriately combine the first embodiment and the second embodiment.

1: Imprint device 2: Curing unit 6: Heating unit 7: Control unit 8: Mold 11: Substrate 14: Imprint material 19: Substrate chuck

Claims (12)

An imprint apparatus that performs an imprint process for forming a pattern on the substrate by forming an imprint material on the substrate with a mold,
A chuck for adsorbing the substrate;
A measurement unit for measuring a relative deviation between the mold and the substrate;
A heating unit that deforms the substrate by heating the substrate;
A curing part for curing the imprint material on the substrate;
A control unit for controlling the imprint process,
The control unit, in the imprint process,
When controlling the heating unit so that the deviation measured by the measurement unit falls within an allowable range, the adsorption force on the substrate is changed from the first adsorption force to a second adsorption force that is smaller than the first adsorption force. Control the chuck to
In a state where the deviation measured by the measurement unit by the control of the heating unit is within the allowable range, the suction force on the substrate is changed from the second suction force to a third suction force larger than the second suction force. Control the chuck to change,
Controlling the curing unit to cure the imprint material in a state where the deviation is within the allowable range by the control of the heating unit and the chuck is adsorbing the substrate with the third adsorption force. An imprint apparatus characterized by the above. The heating unit heats the substrate by intermittently irradiating the substrate with light,
The imprint apparatus according to claim 1, wherein the control unit controls the measurement unit so as to measure the shift in a period in which the heating unit does not irradiate the substrate with light. The curing unit cures the imprint material by intermittently irradiating the imprint material with light,
The imprint apparatus according to claim 1, wherein the control unit controls the measurement unit so as to measure the shift in a period in which the curing unit does not irradiate the substrate with light. .   The control unit is configured to change the adsorption force on the substrate from the second adsorption force to the third adsorption force at a timing when the deviation measured by the measurement unit becomes a target value under the control of the heating unit. The imprint apparatus according to any one of claims 1 to 3, wherein the chuck is controlled.   The said control part controls the said heating part so that the heating of the said board | substrate may be stopped after changing the adsorption power with respect to the said board | substrate from the said 2nd adsorption power to the said 3rd adsorption power. The imprint apparatus described in 1.   The imprint apparatus according to claim 5, wherein the control unit controls the curing unit to cure the imprint material at a timing when heating of the substrate by the heating unit is stopped.   The said control part controls the said hardening part so that the said imprint material may be hardened at the timing when the said shift | offset | difference measured by the said measurement part reaches the said tolerance | permissible_range by control of the said heating part. The imprint apparatus of any one of them.   The control unit according to claim 7, wherein the control unit controls the heating unit to stop heating the substrate at a timing at which the deviation measured by the measurement unit reaches a target value under the control of the heating unit. Printing device.   The controller is configured so that the timing at which the deviation measured by the measuring unit by the control of the heating unit reaches a target value coincides with the timing at which curing of the imprint material is completed. The imprint apparatus according to any one of claims 1 to 3, wherein a timing at which curing of the imprint material is started is controlled. The chuck includes a plurality of suction regions that can independently control the suction force to the substrate,
In the imprint process, the control unit controls the chuck so as to change a suction force of a suction area that sucks an area corresponding to a target area to be subjected to the imprint process among the plurality of suction areas. The imprint apparatus according to claim 1, wherein: The plurality of adsorption regions include a first adsorption region that adsorbs a ring-shaped region corresponding to the outer peripheral region of the substrate and a plurality of first regions that adsorb a plurality of regions corresponding to regions inside the outer peripheral region of the substrate. 2 adsorption regions,
In the imprint process, the control unit maintains the suction force of the first suction region at the first suction force, and sucks a region corresponding to the target region among the plurality of second suction regions. The imprint apparatus according to claim 10, wherein the chuck is controlled so as to change a suction force of the two suction regions. Forming a pattern on a substrate using the imprint apparatus according to any one of claims 1 to 11,
Processing the substrate on which the pattern has been formed in the step;
A method for producing an article comprising:

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