JP2007036289A - Vacuum processing method - Google Patents

Vacuum processing method Download PDF

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JP2007036289A
JP2007036289A JP2006279297A JP2006279297A JP2007036289A JP 2007036289 A JP2007036289 A JP 2007036289A JP 2006279297 A JP2006279297 A JP 2006279297A JP 2006279297 A JP2006279297 A JP 2006279297A JP 2007036289 A JP2007036289 A JP 2007036289A
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substrate
electrostatic chuck
chuck plate
processing chamber
vacuum
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JP4493638B2 (en
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Ko Fuwa
耕 不破
Ken Maehira
謙 前平
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Ulvac Inc
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Ulvac Inc
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a vacuum processing method of making a substrate electrostatically attracted onto an electrostatic chuck plate without generating dust. <P>SOLUTION: After introducing a lubricating gas into a processing chamber 1, a substrate 3 is electrostatically attracted onto the surface of an electrostatic chuck plate 2 under a pressure of approximately 100 Pa. Since a lubricating gas exists between the electrostatic chuck plate 2 and substrate 3 and acts as a lubricant, when the temperature of the substrate 3 rises and thermally expands, dust is not generated even if a back surface of the substrate 3 and surface of the electrostatic chuck plate 2 slide. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は真空処理方法に関し、半導体基板などの基板を静電チャックプレートなどで静電吸着する際に、静電チャックプレートと基板との間に生じるダストの量を低減させる技術に関する。   The present invention relates to a vacuum processing method, and to a technique for reducing the amount of dust generated between an electrostatic chuck plate and a substrate when a substrate such as a semiconductor substrate is electrostatically attracted by an electrostatic chuck plate or the like.

図２の符号１００は従来のスパッタ成膜装置であり、処理室１０１を有している。該処理室１０１の底面には、静電チャックプレート１０２が設けられており、天井側には、ターゲット１０６が配置されている。   Reference numeral 100 in FIG. 2 is a conventional sputter deposition apparatus, which has a processing chamber 101. An electrostatic chuck plate 102 is provided on the bottom surface of the processing chamber 101, and a target 106 is disposed on the ceiling side.

静電チャックプレート１０２は、板状に成形された絶縁物１０４と、絶縁物１０４内に配置された電極１０５ａ、１０５ｂを有しており、不図示の電源により電極１０５ａ、１０５ｂ間に電圧を印加できるように構成されている。   The electrostatic chuck plate 102 includes an insulator 104 formed in a plate shape and electrodes 105a and 105b disposed in the insulator 104, and a voltage is applied between the electrodes 105a and 105b by a power source (not shown). It is configured to be able to.

このようなスパッタ成膜装置１００を用いて半導体ウエハ等の基板１０３に成膜を行う際には、処理室１０１内を高真空雰囲気にし、静電チャックプレート１０２内に設けられた不図示のヒーターに通電し、静電チャックプレート１０２を昇温させた状態で、静電チャックプレート１０２の表面に基板１０３を乗せる。 次いで、電極１０５ａ、１０５ｂに電圧を印加し、基板１０３と静電チャックプレート１０２との間に静電吸着力を発生させ、基板１０３を静電チャックプレート１０２表面に静電吸着させると、基板１０３は静電チャックプレート１０２表面に密着され、熱伝導によって基板１０３が加熱される。   When forming a film on a substrate 103 such as a semiconductor wafer using such a sputter film forming apparatus 100, a heater (not shown) provided in the electrostatic chuck plate 102 is set in a high vacuum atmosphere in the processing chamber 101. The substrate 103 is placed on the surface of the electrostatic chuck plate 102 while the electrostatic chuck plate 102 is heated. Next, when a voltage is applied to the electrodes 105a and 105b to generate an electrostatic adsorption force between the substrate 103 and the electrostatic chuck plate 102, and the substrate 103 is electrostatically adsorbed on the surface of the electrostatic chuck plate 102, the substrate 103 Is in close contact with the surface of the electrostatic chuck plate 102 and the substrate 103 is heated by heat conduction.

その後、ガス導入手段１０７から処理室１０１内にスパッタガスを導入し、ターゲット１０６に直流電圧を印加すると、ターゲット１０６がスパッタされ、基板１０３の表面に薄膜が形成される。   Thereafter, when a sputtering gas is introduced into the processing chamber 101 from the gas introducing means 107 and a DC voltage is applied to the target 106, the target 106 is sputtered and a thin film is formed on the surface of the substrate 103.

このとき、基板１０３は静電チャックプレート１０２に密着されており、静電チャックプレート１０２で均一に加熱されているので、基板１０３の温度分布は均一になっており、その結果、基板１０３面内の膜厚分布や特性分布が均一な薄膜を形成できるようになっている。   At this time, since the substrate 103 is in close contact with the electrostatic chuck plate 102 and is uniformly heated by the electrostatic chuck plate 102, the temperature distribution of the substrate 103 is uniform, and as a result, the substrate 103 is in-plane. A thin film having a uniform film thickness distribution and characteristic distribution can be formed.

しかしながら、基板１０３が湾曲していた場合、静電チャックプレート１０２表面に吸着される際に、基板１０３裏面と静電チャックプレート１０２表面との間が摺動し、摩擦によってダストが発生してしまう。   However, when the substrate 103 is curved, when it is attracted to the surface of the electrostatic chuck plate 102, the back surface of the substrate 103 and the surface of the electrostatic chuck plate 102 slide, and dust is generated due to friction. .

また、基板１０３が湾曲していない場合でも、静電チャックプレート１０２からの熱伝導によって温度上昇する際に、基板１０３が熱膨張し、基板１０３裏面と静電チャックプレート１０２表面との間が摺動し、摩擦によってダストが発生してしまう。   Even when the substrate 103 is not curved, when the temperature rises due to heat conduction from the electrostatic chuck plate 102, the substrate 103 thermally expands, and the gap between the back surface of the substrate 103 and the surface of the electrostatic chuck plate 102 slides. It moves and dust is generated by friction.

このようなダストが基板１０３の裏面に付着し、基板搬送の過程で処理室１０１の内部に散乱して、ダスト汚染を招いてしまう。また、ダストが基板１０３の表面に付着した場合には、薄膜欠陥の原因となり、デバイスの歩留まりが低下してしまう。
このようなダスト発生に対しては、従来いくつかの対処法が考えられていた。 Such dust adheres to the back surface of the substrate 103 and is scattered inside the processing chamber 101 in the course of substrate transport, leading to dust contamination. Further, when dust adheres to the surface of the substrate 103, a thin film defect is caused, and the device yield is reduced.
Several countermeasures have been considered for such dust generation.

第１の対処法としては、基板１０３を搬送して静電チャックプレート１０２上に配置した後、基板１０３を静電吸着せずに、昇温させ、基板を温度上昇させた後、静電吸着するという方法がある。   As a first countermeasure, after the substrate 103 is transported and placed on the electrostatic chuck plate 102, the substrate 103 is heated without raising the substrate 103, and the substrate is heated. There is a way to do it.

この場合、基板１０３が熱膨張する間は、基板１０３裏面は静電チャックプレート１０２表面に接触しているだけで、摩擦力は働いていないので、摺動によるダストの発生は少なくなると考えられる。   In this case, during the thermal expansion of the substrate 103, the back surface of the substrate 103 is only in contact with the surface of the electrostatic chuck plate 102, and no frictional force is applied. Therefore, it is considered that the generation of dust due to sliding is reduced.

しかしながら、この第１の対処法では、静電チャックプレート１０２と基板１０３との間の熱伝達が悪い状態で、基板１０３が加熱されるため、加熱時間を十分とっても、基板１０３の温度は静電チャックプレート１０２よりも数十℃低くなってしまう。   However, in this first countermeasure, since the substrate 103 is heated in a state where heat transfer between the electrostatic chuck plate 102 and the substrate 103 is poor, the temperature of the substrate 103 is not changed even if the heating time is sufficient. It will be several tens of degrees lower than the chuck plate 102.

実際に本発明の発明者等が、基板１０３を静電チャックプレート１０２上に載置し、静電吸着しない状態で充分に加熱してみたところ、静電チャックプレート１０２の温度が３００℃のときに、基板１０３の温度は２５０℃以下にしかならなかった。   When the inventors of the present invention actually placed the substrate 103 on the electrostatic chuck plate 102 and heated it sufficiently without electrostatic adsorption, the temperature of the electrostatic chuck plate 102 was 300 ° C. In addition, the temperature of the substrate 103 was only 250 ° C. or lower.

そして基板１０３と静電チャックプレート１０２の間に温度差があった場合、静電吸着後は基板１０３は温度差分だけ熱膨張するため、その熱膨張の際にはダストが発生すると考えられる。   When there is a temperature difference between the substrate 103 and the electrostatic chuck plate 102, the substrate 103 thermally expands by the temperature difference after electrostatic attraction, and it is considered that dust is generated during the thermal expansion.

以上説明した第１の対処法では、基板１０３を室温でチャックした場合に１０００００個発生していたダストの発生量が、８００００個に減るという程度の効果しかないので、デバイス製造での歩留まりを向上させるには到らない。また、アニールに要する時間が長くなるため、スループットが低下するという問題も生じてしまう。   In the first countermeasure described above, since the amount of dust generated when the substrate 103 is chucked at room temperature is reduced to 80000, the yield in device manufacturing is improved. It is not possible to let them. Moreover, since the time required for annealing becomes long, the problem that a throughput falls will also arise.

そこで、ダスト発生に対処する第２の対処法として、静電チャックプレート１０２の静電吸着力を小さくするという方法が考えられる。   Therefore, as a second countermeasure for coping with dust generation, a method of reducing the electrostatic attraction force of the electrostatic chuck plate 102 can be considered.

符号ｆcで静電吸着力を表すものとすると、その静電吸着力ｆcは、よく知られているように、下記(１)式で与えられる。
ｆc＝(１／２)・ε・(Ｖ／ｄ)2 …(１) Assuming that the electrostatic attraction force is expressed by the symbol f c , the electrostatic attraction force f c is given by the following equation (1) as is well known.
f c = (1/2) · ε · (V / d) 2 (1)

ここで、εは電極１０５ａ、１０５ｂと基板１０３との間の絶縁物１０４の誘電率、ｄは基板１０３と電極１０５ａ、１０５ｂとの間の絶縁物１０４の厚み、Ｖは静電チャックの電極１０５ａ、１０５ｂ間の電圧である。(１)式において、電圧Ｖは容易に変更できるので、静電吸着力ｆcを小さくするためには電圧Ｖを小さくすればよい。 Here, ε is the dielectric constant of the insulator 104 between the electrodes 105a and 105b and the substrate 103, d is the thickness of the insulator 104 between the substrate 103 and the electrodes 105a and 105b, and V is the electrode 105a of the electrostatic chuck. , 105b. In (1), the voltage V can be easily changed, it may be reduced to the voltage V in order to reduce the electrostatic attraction force f c.

この第２の対処法によれば、静電吸着力ｆcを小さくすることで、基板１０３裏面と静電チャックプレート１０２表面との間の摩擦力が減少し、ダストの発生量を低下させることができる。 According to this second Action, by reducing the electrostatic attraction force f c, the frictional force is reduced between the substrate 103 back side and the electrostatic chuck plate 102 surface, reducing the amount of generation of dust Can do.

しかし、この第２の対処法では、静電吸着力ｆcが小さくなる結果、基板１０３と静電チャックプレート１０２との間の密着力が悪化し、熱伝達が悪くなってしまう。その場合、基板１０３から静電チャックプレート１０２への放熱や、基板１０３の加熱等の温度制御性が悪くなるという問題がある。
特開平７−８６２４７号公報 特開平７−８６２５０号公報 特開平９−９７８３０号公報 特開平９−１３４９５１号公報 特開平９−１８６１１２号公報 特開平９−２９３７６９号公報 However, this second workaround results electrostatic attraction force f c is reduced, the adhesion is deteriorated between the substrate 103 and the electrostatic chuck plate 102, the heat transfer is deteriorated. In that case, there is a problem that heat control from the substrate 103 to the electrostatic chuck plate 102 and temperature controllability such as heating of the substrate 103 are deteriorated.
JP-A-7-86247 JP 7-86250 A JP-A-9-97830 Japanese Patent Laid-Open No. 9-134951 JP-A-9-186112 JP-A-9-293769

本発明は、このような従来の技術の課題を解決するためになされたもので、その目的とするところは、静電チャックプレートを用いた従来技術では有効に減少させえなかったダストの発生量を低減させ、デバイス製造上の歩留まりを向上させることにある。   The present invention has been made in order to solve the problems of the prior art, and the object of the present invention is to generate dust that cannot be effectively reduced by the prior art using an electrostatic chuck plate. Is to improve the yield in device manufacturing.

図３において８０は静電チャックプレートを示す。静電チャックプレート８０上に基板８１を載置し、静電チャックプレート８０内にある不図示のヒータで基板８１を加熱する。すると熱膨張に起因する引張り力ｆtが基板８１と静電チャックプレート８０の接触面に沿って発生し、これと反対方向に摩擦力ｆが生じる。この摩擦力ｆは
ｆ＝μＮ＝μ(Ｍｇ＋ｆc) …(２)
と表すことができる。 In FIG. 3, reference numeral 80 denotes an electrostatic chuck plate. The substrate 81 is placed on the electrostatic chuck plate 80, and the substrate 81 is heated by a heater (not shown) in the electrostatic chuck plate 80. Then the tensile force f t caused by the thermal expansion is generated along the contact surface of the substrate 81 and the electrostatic chuck plate 80, the frictional force f is generated in a direction opposite thereto. The frictional force f is f = μN = μ (Mg + f c) ... (2)
It can be expressed as.

μは摩擦係数であって、Ｎは基板８１が静電チャックプレート８０から受ける垂直抗力である。また、Ｍは基板８１の質量、ｇは重力加速度であって、Ｍｇは基板８１の受ける重力(以下基板８１の自重と称する)を示している。さらに、ｆcは静電吸着力を示している。 μ is a coefficient of friction, and N is a normal force that the substrate 81 receives from the electrostatic chuck plate 80. Further, M is the mass of the substrate 81, g is the acceleration of gravity, and Mg is the gravity received by the substrate 81 (hereinafter referred to as the own weight of the substrate 81). Further, f c indicates an electrostatic adsorption force.

基板８１の自重Ｍｇは静電吸着力ｆcよりもはるかに小さいため無視できる。例えば直径８インチのＳｉ基板の場合は、その重さは６０ｇ以下でしかないが、静電吸着力を１００ｇ／cm2 とすると、Ｓｉ基板全体で受ける静電吸着力は約３１ｋｇ重となり、自重による抗力よりもはるかに大きい。従って、(２)式は、
ｆ≒μｆc …(３)
と近似できる。静電チャックプレートの種類にもよるが、静電吸着力は３０００ｇ／cm2 を超えるものもあるので、この近似は妥当といえる。 Own weight Mg of the substrate 81 is negligible since much smaller than the electrostatic attraction force f c. For example, in the case of a Si substrate having a diameter of 8 inches, the weight is only 60 g or less, but if the electrostatic adsorption force is 100 g / cm 2 , the electrostatic adsorption force received by the entire Si substrate is about 31 kg weight, Much greater than drag by. Therefore, equation (2) is
f ≒ μf c ... (3)
Can be approximated. Although this depends on the type of electrostatic chuck plate, the electrostatic attraction force exceeds 3000 g / cm 2 , so this approximation is reasonable.

基板８１と静電チャックプレート８０の間に生じるダストは、(３)式で示された摩擦力ｆが原因なので、ダスト発生量を少なくするためには、静電吸着力ｆc、摩擦係数μの何れか一方を減少させることで、摩擦力ｆを小さくすればよい。 Dust generated between the substrate 81 and the electrostatic chuck plate 80, so because of the frictional force f indicated by (3), in order to reduce the dust generation amount, the electrostatic attractive force f c, the coefficient of friction μ By reducing either one of them, the frictional force f may be reduced.

このうち静電吸着力ｆcを小さくすると、上述のように基板８１の温度制御性が悪くなるため、摩擦係数μを小さくすることが望ましい。
一般に、摩擦力ｆを小さくするためにはグリス状の潤滑剤が用いられており、摩擦が生じる摺動面へ塗布することで、摩擦係数μが小さくされている。 When these reducing the electrostatic attraction force f c, the temperature controllability of the substrate 81 is deteriorated as described above, it is desirable to reduce the friction coefficient mu.
In general, a grease-like lubricant is used to reduce the frictional force f, and the friction coefficient μ is reduced by applying it to a sliding surface where friction occurs.

しかしながら静電チャックプレートが用いられる真空装置(ＣＶＤ装置、スパッタ装置等)では高い清浄度が要求されるため、グリス等のように、装置内の汚染が生じやすい潤滑剤を用いることはできない。   However, since a high degree of cleanliness is required in a vacuum apparatus (such as a CVD apparatus or a sputtering apparatus) in which an electrostatic chuck plate is used, a lubricant that easily causes contamination in the apparatus, such as grease, cannot be used.

そこで、本発明の発明者等は、気体分子を用いることを考えた。
実際に、セラミック製ヒーター付き静電チャックプレートを用い、真空雰囲気(１．３×１０-4Ｐａ)中で静電チャックプレートを２５０℃に昇温させ、静電チャックプレート中の電極に±３００Ｖの電圧を印加し、基板を吸着させた。 Therefore, the inventors of the present invention considered using gas molecules.
Actually, using an electrostatic chuck plate with a ceramic heater, the electrostatic chuck plate is heated to 250 ° C. in a vacuum atmosphere (1.3 × 10 −4 Pa), and ± 300 V is applied to the electrodes in the electrostatic chuck plate. Was applied to adsorb the substrate.

その基板を真空雰囲気中から取り出し、基板裏面に付着したダストの個数を観察した結果、３４０００個のダストが計測された。   The substrate was taken out from the vacuum atmosphere and the number of dust adhering to the back surface of the substrate was observed. As a result, 34000 dusts were measured.

他方、真空雰囲気中でなく大気圧中(１．０×１０5 Ｐａ)とした他は条件を変えずに静電吸着させた結果、基板裏面には、４１１８個のダストが計測された。 On the other hand, 4118 dusts were measured on the back surface of the substrate as a result of electrostatic adsorption without changing the conditions except that it was not in a vacuum atmosphere but in atmospheric pressure (1.0 × 10 5 Pa).

このように、大気圧中で静電吸着した場合は、高真空雰囲気中で静電吸着した場合に比して、全体のダスト数がおよそ１／８に減少している。   As described above, when the electrostatic adsorption is performed at atmospheric pressure, the total number of dusts is reduced to about 1/8 as compared with the case where the electrostatic adsorption is performed in a high vacuum atmosphere.

この結果を考察すると、大気圧中で静電吸着した場合には、基板裏面と静電チャックプレート表面との間には気体分子が存在し、基板裏面及び静電チャックプレート表面に吸着した気体分子が潤滑剤として作用し、摩擦力が小さくなる結果、ダストの発生量が減少すると考えられる。   Considering this result, when electrostatic adsorption is performed at atmospheric pressure, gas molecules exist between the substrate back surface and the electrostatic chuck plate surface, and the gas molecules adsorbed on the substrate back surface and the electrostatic chuck plate surface are present. Acts as a lubricant and the frictional force is reduced, so that the amount of dust generated is considered to decrease.

そして、気体分子を潤滑剤としたときには、基板と静電チャックプレートとの間の熱伝達が良くなり、２５０℃の静電チャックプレートに、室温の基板を静電吸着させた場合、基板温度は５秒以下で２５０℃まで到達する。従って静電吸着力ｆcを小さくするのとは異なり、ダスト発生量を減少させても基板の昇温速度が遅くなることはない。 When gas molecules are used as a lubricant, heat transfer between the substrate and the electrostatic chuck plate is improved. When a room temperature substrate is electrostatically adsorbed on the 250 ° C. electrostatic chuck plate, the substrate temperature is It reaches 250 ° C. in 5 seconds or less. Thus unlike to reduce the electrostatic attraction force f c, never heating rate of the substrate becomes slower decrease the dust emissions.

上記例では大気圧(１．０×１０5 Ｐａ)での事例を述べたが、大気圧よりも低圧中で静電吸着した場合でも、潤滑ガスとなる気体分子が、基板と静電チャックプレートとの間に存在していればすれば有効に作用する。本発明の発明者等は１．３×１０4Ｐａ以下の圧力でもダスト発生量を減少させられることも確認している。 In the above example, the case of atmospheric pressure (1.0 × 10 5 Pa) has been described. However, even when electrostatic adsorption is performed at a pressure lower than atmospheric pressure, the gas molecules serving as the lubricating gas are separated from the substrate and the electrostatic chuck plate. If it exists in between, it works effectively. The inventors of the present invention have also confirmed that the amount of dust generated can be reduced even at a pressure of 1.3 × 10 4 Pa or less.

本発明は、かかる知見に基づいて得られたものであり、請求項１記載の発明は、処理室内に設けられた静電チャックプレート上に基板を静電吸着させて前記基板を真空処理する真空処理方法であって、前記処理室内に潤滑ガスを導入し、前記処理室内を第１の圧力状態にした後、前記基板を静電吸着し、次いで、前記処理室内を前記第１の圧力状態よりも低圧の第２の圧力状態にして前記基板を処理することを特徴とするものである。
請求項２記載の発明は、請求項１記載の真空処理方法であって、前記静電チャックプレートを昇温させた状態で、前記第１の圧力状態にすることを特徴とする。
請求項３記載の発明は、請求項１又は請求項２記載のいずれか１項記載の真空処理方法であって、前記処理室内を前記第１の圧力状態よりも低圧の予備真空状態にした後、前記潤滑ガスの導入を行うことを特徴とする。
請求項４記載の発明は、請求項１乃至請求項３のいずれか１項記載の真空処理方法であって、前記第１の圧力は、１００Ｐａ以上の圧力であることを特徴とするようにしてもよい。
請求項５記載の発明は、処理室内に設けられた静電チャックプレート上に基板を静電吸着させて前記基板を真空処理する真空処理方法であって、昇温された前記静電チャックプレート上に処理対象の基板を配置し、１００Ｐａ以上の圧力下で、前記静電チャックプレートによって前記基板を静電吸着し、前記静電チャックプレートからの熱伝導によって前記基板を加熱した後、前記処理室の内部を真空排気して圧力を低下させた状態で前記基板を真空処理する真空処理方法である。
請求項６記載の発明は、請求項５記載の真空処理方法であって、前記基板を静電吸着して加熱する際、前記処理室内を大気圧にする真空処理方法である。 The present invention has been obtained based on such knowledge, and the invention according to claim 1 is a vacuum in which a substrate is electrostatically adsorbed on an electrostatic chuck plate provided in a processing chamber to vacuum-process the substrate. In this processing method, a lubricating gas is introduced into the processing chamber, the processing chamber is brought to a first pressure state, the substrate is electrostatically adsorbed, and then the processing chamber is moved from the first pressure state. Is characterized in that the substrate is processed in a low pressure second pressure state.
A second aspect of the present invention is the vacuum processing method according to the first aspect of the present invention, wherein the first pressure state is set while the electrostatic chuck plate is heated.
Invention of Claim 3 is the vacuum processing method of any one of Claim 1 or Claim 2, Comprising: After making the said process chamber into the preliminary | backup vacuum state of a pressure lower than the said 1st pressure state The lubricating gas is introduced.
A fourth aspect of the present invention is the vacuum processing method according to any one of the first to third aspects, wherein the first pressure is a pressure of 100 Pa or more. Also good.
According to a fifth aspect of the present invention, there is provided a vacuum processing method in which a substrate is electrostatically adsorbed on an electrostatic chuck plate provided in a processing chamber to vacuum-process the substrate, wherein the temperature is increased on the electrostatic chuck plate A substrate to be processed is disposed on the substrate, and the substrate is electrostatically adsorbed by the electrostatic chuck plate under a pressure of 100 Pa or more, and the substrate is heated by heat conduction from the electrostatic chuck plate, and then the processing chamber. Is a vacuum processing method in which the substrate is vacuum processed in a state where the pressure is reduced by evacuating the inside of the substrate.
A sixth aspect of the present invention is the vacuum processing method according to the fifth aspect, wherein when the substrate is electrostatically adsorbed and heated, the processing chamber is brought to atmospheric pressure.

このように、潤滑ガスを処理室内に導入し、第１の圧力の下で基板を静電チャックプレート上に静電吸着することにより、静電チャックプレートの表面と基板との間に潤滑ガスのガス分子を吸着させることができる。このため、潤滑ガスのガス分子が、基板裏面と静電チャックプレート表面との間の潤滑剤となり、摩擦力を小さくでき、ダスト発生量を減少させることが可能となる。   In this way, the lubricating gas is introduced into the processing chamber, and the substrate is electrostatically adsorbed onto the electrostatic chuck plate under the first pressure, so that the lubricating gas is removed between the surface of the electrostatic chuck plate and the substrate. Gas molecules can be adsorbed. For this reason, the gas molecules of the lubricating gas become a lubricant between the back surface of the substrate and the surface of the electrostatic chuck plate, so that the frictional force can be reduced and the amount of dust generated can be reduced.

また、基板裏面と静電チャックプレートの間に潤滑ガスが存在するため、熱伝達が良くなり、基板の温度制御性が向上する。   Further, since the lubricating gas exists between the back surface of the substrate and the electrostatic chuck plate, heat transfer is improved, and the temperature controllability of the substrate is improved.

さらに、潤滑ガスに吸着性の低いガスを用いれば、潤滑ガスを真空排気するのも容易であり、処理室内が汚染されることもない。   Furthermore, if a gas having low adsorptivity is used as the lubricating gas, it is easy to evacuate the lubricating gas and the processing chamber is not contaminated.

基板の温度制御性を悪化させることなく、ダスト発生量を減少させることができる。   The amount of dust generated can be reduced without deteriorating the temperature controllability of the substrate.

以下で、本発明の実施の形態について図面を参照しながら説明する。図１の符号７０は本発明の一実施形態の真空処理方法に用いられるスパッタ成膜装置である。   Embodiments of the present invention will be described below with reference to the drawings. Reference numeral 70 in FIG. 1 is a sputter film forming apparatus used in the vacuum processing method of one embodiment of the present invention.

このスパッタ成膜装置７０は、処理室１、ガス導入系２０、排気系３０、電源系４０、真空ゲージ５０及びコンピュータ６０を有している。   The sputter film forming apparatus 70 includes a processing chamber 1, a gas introduction system 20, an exhaust system 30, a power supply system 40, a vacuum gauge 50, and a computer 60.

処理室１内の底面側には載置台８が配置されており、該載置台８上には、静電チャックプレート２が配置されている。   A mounting table 8 is disposed on the bottom side in the processing chamber 1, and the electrostatic chuck plate 2 is disposed on the mounting table 8.

静電チャックプレート２は、板状の絶縁物４と、該絶縁物４内で、一定間隔で離間して配置された一対の電極５ａ、５ｂとで構成されている。また、絶縁物４の内部には、図示しないヒータが内蔵されており、そのヒータは、図示しない加熱用電源に接続され、該加熱電源によってヒータに通電すると、静電チャックプレート２全体を加熱できるように構成されている。   The electrostatic chuck plate 2 includes a plate-like insulator 4 and a pair of electrodes 5a and 5b that are spaced apart from each other within the insulator 4 at a predetermined interval. In addition, a heater (not shown) is built in the insulator 4, and the heater is connected to a heating power source (not shown). When the heater is energized by the heating power source, the entire electrostatic chuck plate 2 can be heated. It is configured as follows.

電源系４０は、直流電源４１とチャック電源４２とを有しており、直流電源４１はターゲット７に接続され、処理室１との間に直流電圧を印加できるように構成されている。また、チャック電源４２は、処理室１の外部底面に設けられた導入端子６ａ、６ｂを介して、電極５ａ，５ｂにそれぞれ接続されており、チャック電源４２を起動すると、これらの電極５ａ、５ｂの間に直流電圧を印加できるように構成されている。   The power supply system 40 includes a DC power supply 41 and a chuck power supply 42, and the DC power supply 41 is connected to the target 7 and configured to apply a DC voltage to the processing chamber 1. Further, the chuck power source 42 is connected to the electrodes 5a and 5b via introduction terminals 6a and 6b provided on the outer bottom surface of the processing chamber 1, and when the chuck power source 42 is activated, these electrodes 5a and 5b are connected. It is comprised so that a DC voltage can be applied between.

ガス導入系２０は、マスフローコントローラ２１、２４、バルブ２２、２５、第１、第２のガスボンベ２３、２６を有しており、第１、第２のガスボンベ２３、２６内には、スパッタリングガスと潤滑ガスとがそれぞれ充填されている。   The gas introduction system 20 includes mass flow controllers 21 and 24, valves 22 and 25, and first and second gas cylinders 23 and 26. In the first and second gas cylinders 23 and 26, sputtering gas and Each is filled with a lubricating gas.

第１、第２のガスボンベ２３、２６は、それぞれバルブ２３、２６、マスフローコントローラ２１、２４を介して処理室１に接続されており、バルブ２２、２５を開けると、処理室１内に、スパッタリングガスと潤滑ガスをマスフローコントローラ２１、２４でそれぞれ流量制御した状態で導入できるように構成されている。   The first and second gas cylinders 23 and 26 are connected to the processing chamber 1 via valves 23 and 26 and mass flow controllers 21 and 24, respectively. When the valves 22 and 25 are opened, sputtering is performed in the processing chamber 1. The gas and the lubricating gas are configured to be introduced in a state where the flow rate is controlled by the mass flow controllers 21 and 24, respectively.

排気系３０は、真空ポンプ３１とゲートバルブ３２とを有しており、真空ポンプ３１はゲートバルブ３２を介して処理室１に接続されている。そして、真空ポンプ３１を動作させた状態でゲートバルブ３２を開けると、処理室１内を高真空状態まで真空排気できるようになっており、処理室１外部に設けられた真空ゲージ５０によって、処理室１内の圧力を測定できるように構成されている。   The exhaust system 30 includes a vacuum pump 31 and a gate valve 32, and the vacuum pump 31 is connected to the processing chamber 1 via the gate valve 32. When the gate valve 32 is opened while the vacuum pump 31 is in operation, the inside of the processing chamber 1 can be evacuated to a high vacuum state, and processing is performed by a vacuum gauge 50 provided outside the processing chamber 1. It is comprised so that the pressure in the chamber 1 can be measured.

マスフローコントローラ２１、２４、バルブ２２、２５、真空ポンプ３１、ゲートバルブ３２、直流電源４１、チャック電源４２及び真空ゲージ５０は、コンピュータ６０に接続されており、コンピュータ６０から入力される信号によって動作するように構成されている。   The mass flow controllers 21, 24, valves 22, 25, vacuum pump 31, gate valve 32, DC power supply 41, chuck power supply 42, and vacuum gauge 50 are connected to a computer 60 and operate according to signals input from the computer 60. It is configured as follows.

従って、下記に説明するスパッタリングガスや潤滑ガスの導入、処理室１の真空排気量の制御、ターゲット７及び電極５ａ、５ｂへの電圧印加等の制御はコンピューター６０によって行われるものとする。   Therefore, control such as introduction of sputtering gas and lubricating gas, control of the evacuation amount of the processing chamber 1 and application of voltage to the target 7 and the electrodes 5a and 5b described below is performed by the computer 60.

以上のようなスパッタ成膜装置７０を用いてスパッタリングを行う場合には、成膜する際には、予め真空ポンプ３１を動作させ、処理室１に接続されたゲートバルブ３２を開けて処理室１内を１×１０-4 Ｐａ以下の高真空状態まで真空排気しておく(予備真空状態)。 When sputtering is performed using the sputter film forming apparatus 70 as described above, when forming a film, the vacuum pump 31 is operated in advance, and the gate valve 32 connected to the processing chamber 1 is opened to open the processing chamber 1. The inside is evacuated to a high vacuum state of 1 × 10 −4 Pa or less (preliminary vacuum state).

次に不図示のヒータに通電し、静電チャックプレート２の温度を３００℃まで昇温させた後、上記の高真空状態を維持しながら、処理室１内に成膜対象である基板３を搬入し、静電チャックプレート２上に載置する。   Next, a heater (not shown) is energized to raise the temperature of the electrostatic chuck plate 2 to 300 ° C., and then the substrate 3 to be deposited is placed in the processing chamber 1 while maintaining the above high vacuum state. It is carried in and placed on the electrostatic chuck plate 2.

次いでゲートバルブ３２を閉じ、処理室１内の真空排気を停止した状態でバルブ２５を開け、第２のガスボンベ２６内の潤滑ガスを、処理室１に流量制御しながら導入する。   Next, the gate valve 32 is closed, the valve 25 is opened in a state where the vacuum exhaust in the processing chamber 1 is stopped, and the lubricating gas in the second gas cylinder 26 is introduced into the processing chamber 1 while controlling the flow rate.

真空ゲージ５０が１００Ｐａ(第１の圧力)を示したところで、バルブ２５を閉じ、チャック電源８を起動し、電極５ａ，５ｂにチャック電圧を印加すると、静電チャックプレート２と基板３との間に静電吸着力が生じ、基板３が静電チャックプレート２表面に静電吸着される。   When the vacuum gauge 50 indicates 100 Pa (first pressure), the valve 25 is closed, the chuck power supply 8 is activated, and a chuck voltage is applied to the electrodes 5a and 5b. An electrostatic attraction force is generated on the substrate 3 and the substrate 3 is electrostatically adsorbed on the surface of the electrostatic chuck plate 2.

このとき、基板３は、その裏面と静電チャックプレート２表面との間に潤滑ガスが存在した状態で密着される。   At this time, the substrate 3 is brought into close contact with the back surface of the substrate 3 and the surface of the electrostatic chuck plate 2 in the presence of a lubricating gas.

基板３が静電吸着された状態では、静電チャックプレート２からの熱伝導によって基板３が熱膨張し、基板３裏面と静電チャックプレート２表面とが摺動するが、基板３裏面と静電チャックプレート２表面の間に存する潤滑ガスが潤滑剤となり、その間の摩擦力が小さくなっているため、摺動してもダストが発生しにくくなっている。   In a state where the substrate 3 is electrostatically attracted, the substrate 3 thermally expands due to heat conduction from the electrostatic chuck plate 2, and the back surface of the substrate 3 and the surface of the electrostatic chuck plate 2 slide. Since the lubricating gas existing between the surfaces of the electric chuck plate 2 becomes a lubricant and the frictional force therebetween is small, dust is hardly generated even if it slides.

また、基板３裏面と静電チャックプレート２表面の間に存する潤滑ガスにより、基板３へは、静電チャックプレート２からの直接的な熱伝導の他、潤滑ガスを介した熱伝導が生じるため、熱的な接触面積が大きくなっている。従って、従来に比べて基板３の昇温速度が速くなっており、基板３は５秒間程度で静電チャックプレート２と同温度の３００℃に達する。   Further, the lubricating gas existing between the back surface of the substrate 3 and the surface of the electrostatic chuck plate 2 causes heat conduction to the substrate 3 through the lubricating gas in addition to direct heat conduction from the electrostatic chuck plate 2. The thermal contact area is getting bigger. Therefore, the temperature rising rate of the substrate 3 is faster than the conventional one, and the substrate 3 reaches 300 ° C. which is the same temperature as the electrostatic chuck plate 2 in about 5 seconds.

基板３が所定温度に達した後、ゲートバルブ３２を開け、処理室１内の真空排気を再開し、真空ゲージ５０が１×１０-4 Ｐａ(第２の圧力)を示したところでバルブ２２を開け、流量制御した状態で処理室１内にスパッタリングガスを導入する。 After the substrate 3 reaches a predetermined temperature, the gate valve 32 is opened, the evacuation of the processing chamber 1 is restarted, and the valve 22 is turned on when the vacuum gauge 50 indicates 1 × 10 −4 Pa (second pressure). A sputtering gas is introduced into the processing chamber 1 with the flow rate controlled.

処理室１内の圧力が安定したところで、直流電源４１を起動し、ターゲット７に直流電圧を印加すると、ターゲット７のスパッタが開始され、基板３表面に薄膜が成長する。   When the pressure in the processing chamber 1 is stabilized, when the DC power supply 41 is started and a DC voltage is applied to the target 7, sputtering of the target 7 is started and a thin film grows on the surface of the substrate 3.

基板３表面の薄膜が所定の膜厚に形成されたら、スパッタリングガスの導入及びターゲット７への直流電圧の印加を停止し、スパッタリングを終了させる。   When the thin film on the surface of the substrate 3 is formed to a predetermined thickness, the introduction of the sputtering gas and the application of the DC voltage to the target 7 are stopped, and the sputtering is terminated.

薄膜が形成された基板３を処理室１から取り出し、その裏面を観察したところ、従来では数万個程度のダストが計測されたが、本実施形態では３０００個から４０００個程度のダストしか計測されず、摩擦力の低下によるダスト発生防止の効果が確認できた。   When the substrate 3 on which the thin film is formed is taken out from the processing chamber 1 and the back surface thereof is observed, about tens of thousands of dusts are conventionally measured, but only about 3000 to 4000 dusts are measured in this embodiment. In addition, the effect of preventing the generation of dust due to a decrease in frictional force was confirmed.

なお、本実施形態では、潤滑ガスを導入し、処理室１内の圧力が１００Ｐａになった状態で静電チャックプレート２上に基板３を載置したが、本発明はそれに限定されるものではなく、静電チャックプレート２上に基板３を載置した後、潤滑ガスを導入し、処理室１内の圧力を１００Ｐａにし、静電吸着してもよい。   In this embodiment, the lubricating gas is introduced and the substrate 3 is placed on the electrostatic chuck plate 2 with the pressure in the processing chamber 1 being 100 Pa. However, the present invention is not limited thereto. Alternatively, after the substrate 3 is placed on the electrostatic chuck plate 2, a lubricating gas may be introduced to set the pressure in the processing chamber 1 to 100 Pa, and electrostatic adsorption may be performed.

また、上記実施形態では、スパッタ成膜装置７０を用いたが、本発明の真空処理方法はＣＶＤ装置や、他の真空処理装置についても適用することが可能である。   Moreover, in the said embodiment, although the sputter film-forming apparatus 70 was used, the vacuum processing method of this invention is applicable also to a CVD apparatus and another vacuum processing apparatus.

上記実施形態では、ガス導入系２０内に、潤滑ガスを導入する経路とスパッタガスを導入する経路とを別々に設けたため、スパッタガスにアルゴンガスを用いる場合、潤滑ガスに、ヘリウムガス、窒素ガス等のアルゴンガスとは異なるガスを用いることが可能になっているが、潤滑ガスとスパッタガスに同じガス(アルゴンガス等の希ガス)を用いれば、潤滑ガスを導入する経路とスパッタガスを導入する経路とを一緒にすることができる。   In the above embodiment, since the route for introducing the lubricating gas and the route for introducing the sputtering gas are separately provided in the gas introduction system 20, when argon gas is used as the sputtering gas, helium gas, nitrogen gas is used as the lubricating gas. It is possible to use a gas different from the argon gas such as, but if the same gas (noble gas such as argon gas) is used for the lubricating gas and the sputtering gas, the path for introducing the lubricating gas and the sputtering gas are introduced. Together with the route to be.

また、潤滑ガスの導入孔を処理室１に設けず、潤滑ガスが静電チャックプレート２の表面から吹き出すように構成してもよい。このような構成すると、潤滑ガスの消費量を少なくすることができる。   Further, the lubricating gas introduction hole may not be provided in the processing chamber 1, and the lubricating gas may be blown out from the surface of the electrostatic chuck plate 2. With such a configuration, the consumption amount of the lubricating gas can be reduced.

また、本実施形態では、一対の電極５ａ，５ｂを有する双極型の静電チャックプレート２を用いているが、本発明はこれに限らず、単一の電極を用いる単極型の静電チャックプレートを用いてもよい。   In this embodiment, the bipolar electrostatic chuck plate 2 having a pair of electrodes 5a and 5b is used. However, the present invention is not limited to this, and the monopolar electrostatic chuck using a single electrode. A plate may be used.

なお、潤滑ガスとしては、周期律表０族の他、反応性の低いガスを用いることができる。   As the lubricating gas, a gas having low reactivity can be used in addition to group 0 of the periodic table.

また、上記実施形態では、第１の圧力を１００Ｐａとしたが、本発明はその圧力に限定されるものではなく、真空処理を行う第２の圧力よりも高い圧力であればよい。但し、ダストの低減効果上、１００Ｐａ以上の圧力が望ましい。   Moreover, in the said embodiment, although the 1st pressure was 100 Pa, this invention is not limited to the pressure, What is necessary is just a pressure higher than the 2nd pressure which performs a vacuum process. However, the pressure of 100 Pa or more is desirable for the dust reduction effect.

本発明の真空処理方法を実施するスパッタ成膜装置の構成図Configuration diagram of a sputtering film forming apparatus for carrying out the vacuum processing method of the present invention 従来のスパッタ成膜装置の構成を説明する図面Drawing explaining structure of conventional sputter deposition apparatus 静電チャックプレート上に載置された基板に働く力を説明する図The figure explaining the force which acts on the board | substrate mounted on the electrostatic chuck plate

符号の説明Explanation of symbols

１…処理室 ２…静電チャックプレート ３…基板 1 ... Processing chamber 2 ... Electrostatic chuck plate 3 ... Substrate

Claims (6)

処理室内に設けられた静電チャックプレート上に基板を静電吸着させて前記基板を真空処理する真空処理方法であって、
前記処理室内に潤滑ガスを導入し、前記処理室内を第１の圧力状態にした後、前記基板を静電吸着し、
次いで、前記処理室内を前記第１の圧力状態よりも低圧の第２の圧力状態にして前記基板を処理することを特徴とする真空処理方法。 A vacuum processing method for vacuum processing the substrate by electrostatically adsorbing the substrate on an electrostatic chuck plate provided in a processing chamber,
After introducing a lubricating gas into the processing chamber and bringing the processing chamber to a first pressure state, electrostatically adsorbing the substrate,
Next, the vacuum processing method is characterized in that the substrate is processed in a second pressure state lower than the first pressure state in the processing chamber. 前記静電チャックプレートを昇温させた状態で、前記第１の圧力状態にすることを特徴とする請求項１記載の真空処理方法。 The vacuum processing method according to claim 1, wherein the first pressure state is set while the electrostatic chuck plate is heated. 前記処理室内を前記第１の圧力状態よりも低圧の予備真空状態にした後、前記潤滑ガスの導入を行うことを特徴とする請求項１又は請求項２のいずれか１項記載の真空処理方法。 3. The vacuum processing method according to claim 1, wherein the lubricating gas is introduced after the pre-vacuum state lower than the first pressure state is set in the processing chamber. 4. . 前記第１の圧力は、１００Ｐａ以上の圧力であることを特徴とする請求項１乃至請求項３のいずれか１項記載の真空処理方法。 The vacuum processing method according to any one of claims 1 to 3, wherein the first pressure is a pressure of 100 Pa or more. 処理室内に設けられた静電チャックプレート上に基板を静電吸着させて前記基板を真空処理する真空処理方法であって、
昇温された前記静電チャックプレート上に処理対象の基板を配置し、１００Ｐａ以上の圧力下で、前記静電チャックプレートによって前記基板を静電吸着し、前記静電チャックプレートからの熱伝導によって前記基板を加熱した後、前記処理室の内部を真空排気して圧力を低下させた状態で前記基板を真空処理する真空処理方法。 A vacuum processing method for vacuum processing the substrate by electrostatically adsorbing the substrate on an electrostatic chuck plate provided in a processing chamber,
A substrate to be processed is placed on the electrostatic chuck plate that has been heated, and the substrate is electrostatically adsorbed by the electrostatic chuck plate under a pressure of 100 Pa or more, and heat conduction from the electrostatic chuck plate is performed. A vacuum processing method of vacuum-treating the substrate in a state in which the inside of the processing chamber is evacuated and the pressure is reduced after the substrate is heated. 前記基板を静電吸着して加熱する際、前記処理室内を大気圧にする請求項５記載の真空処理方法。   The vacuum processing method according to claim 5, wherein when the substrate is electrostatically attracted and heated, the processing chamber is brought to atmospheric pressure.
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Cited By (3)

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Publication number Priority date Publication date Assignee Title
US7772098B2 (en) 2007-03-29 2010-08-10 Panasonic Corporation Method for manufacturing semiconductor device
JP2014022378A (en) * 2012-07-12 2014-02-03 Canon Inc Imprint device and method of manufacturing article using the same
JP2014241319A (en) * 2013-06-11 2014-12-25 東京エレクトロン株式会社 Substrate processing method, and substrate processing apparatus

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JPS6294953A (en) * 1985-10-21 1987-05-01 Toto Ltd Manufacture of electrostatic chucking substrate
JPH04147643A (en) * 1990-10-09 1992-05-21 Nippon Telegr & Teleph Corp <Ntt> Vacuum coupler with built-in discharge preventing contact, pallet, and method of feeding power to pallet
JPH0997830A (en) * 1995-07-21 1997-04-08 Fuji Electric Co Ltd Electrostatic chuck holder, wafer holding mechanism and using method thereof

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JPS6294953A (en) * 1985-10-21 1987-05-01 Toto Ltd Manufacture of electrostatic chucking substrate
JPH04147643A (en) * 1990-10-09 1992-05-21 Nippon Telegr & Teleph Corp <Ntt> Vacuum coupler with built-in discharge preventing contact, pallet, and method of feeding power to pallet
JPH0997830A (en) * 1995-07-21 1997-04-08 Fuji Electric Co Ltd Electrostatic chuck holder, wafer holding mechanism and using method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7772098B2 (en) 2007-03-29 2010-08-10 Panasonic Corporation Method for manufacturing semiconductor device
JP2014022378A (en) * 2012-07-12 2014-02-03 Canon Inc Imprint device and method of manufacturing article using the same
JP2014241319A (en) * 2013-06-11 2014-12-25 東京エレクトロン株式会社 Substrate processing method, and substrate processing apparatus

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