JP2014022032A5 - - Google Patents

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Publication number
JP2014022032A5
JP2014022032A5 JP2013145321A JP2013145321A JP2014022032A5 JP 2014022032 A5 JP2014022032 A5 JP 2014022032A5 JP 2013145321 A JP2013145321 A JP 2013145321A JP 2013145321 A JP2013145321 A JP 2013145321A JP 2014022032 A5 JP2014022032 A5 JP 2014022032A5
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JP
Japan
Prior art keywords
inverter
transistor
threshold voltage
coupled
low threshold
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JP2013145321A
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English (en)
Japanese (ja)
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JP2014022032A (ja
JP6238431B2 (ja
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Priority claimed from US13/548,848 external-priority patent/US9111638B2/en
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Publication of JP2014022032A5 publication Critical patent/JP2014022032A5/ja
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Publication of JP6238431B2 publication Critical patent/JP6238431B2/ja
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JP2013145321A 2012-07-13 2013-07-11 ビット線プリチャージ電圧が低減されたｓｒａｍビットセル Active JP6238431B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/548,848 US9111638B2 (en) 2012-07-13 2012-07-13 SRAM bit cell with reduced bit line pre-charge voltage
US13/548,848 2012-07-13

Publications (3)

Publication Number Publication Date
JP2014022032A JP2014022032A (ja) 2014-02-03
JP2014022032A5 true JP2014022032A5 (enExample) 2016-08-25
JP6238431B2 JP6238431B2 (ja) 2017-11-29

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ID=49913877

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013145321A Active JP6238431B2 (ja) 2012-07-13 2013-07-11 ビット線プリチャージ電圧が低減されたｓｒａｍビットセル

Country Status (2)

Country Link
US (1) US9111638B2 (enExample)
JP (1) JP6238431B2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9111634B2 (en) 2012-07-13 2015-08-18 Freescale Semiconductor, Inc. Methods and structures for multiport memory devices
US9508405B2 (en) * 2013-10-03 2016-11-29 Stmicroelectronics International N.V. Method and circuit to enable wide supply voltage difference in multi-supply memory
US9293192B1 (en) 2014-12-02 2016-03-22 International Business Machines Corporation SRAM cell with dynamic split ground and split wordline
TWI688211B (zh) * 2015-01-29 2020-03-11 日商半導體能源研究所股份有限公司 半導體裝置、電子組件及電子裝置
US9490007B1 (en) * 2015-05-21 2016-11-08 Globalfoundries Inc. Device comprising a plurality of FDSOI static random-access memory bitcells and method of operation thereof
US9431098B1 (en) 2015-08-10 2016-08-30 International Business Machines Corporation Structure for reducing pre-charge voltage for static random-access memory arrays
TWI622061B (zh) * 2016-05-19 2018-04-21 華邦電子股份有限公司 半導體記憶體裝置
CN106847333B (zh) * 2017-01-13 2019-08-16 青岛专用集成电路设计工程技术研究中心 一种新型抗单粒子sram位单元
CN110364193A (zh) * 2018-04-11 2019-10-22 中芯国际集成电路制造（天津）有限公司 静态随机存取存储单元、静态随机存取存储器及电子装置
JP7319780B2 (ja) * 2019-01-11 2023-08-02 ブリルニクス シンガポール プライベート リミテッド 固体撮像装置、固体撮像装置の駆動方法、および電子機器
CN109784483B (zh) * 2019-01-24 2022-09-09 电子科技大学 基于fd-soi工艺的二值化卷积神经网络内存内计算加速器
TWI802703B (zh) 2019-05-31 2023-05-21 聯華電子股份有限公司 靜態隨機存取記憶體裝置
CN113628650B (zh) * 2021-06-21 2024-03-19 杭州未名信科科技有限公司 静态随机存取存储器单元结构及静态随机存取存储器
US12237008B2 (en) 2021-06-22 2025-02-25 Untether Ai Corporation Low-power static random access memory
US11990181B2 (en) 2021-06-22 2024-05-21 Untether Ai Corporation Low-power static random access memory

Family Cites Families (18)

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JPS6325879A (ja) * 1986-07-17 1988-02-03 Toshiba Corp スタテイツク型半導体メモリ
JPH0831178A (ja) * 1994-07-14 1996-02-02 Hitachi Ltd 半導体記憶装置
US5532955A (en) 1994-12-30 1996-07-02 Mosaid Technologies Incorporated Method of multilevel dram sense and restore
JP4198201B2 (ja) * 1995-06-02 2008-12-17 株式会社ルネサステクノロジ 半導体装置
JPH10125069A (ja) * 1996-10-23 1998-05-15 Hitachi Ltd 半導体メモリ
US6181608B1 (en) * 1999-03-03 2001-01-30 Intel Corporation Dual Vt SRAM cell with bitline leakage control
US6307805B1 (en) * 2000-12-21 2001-10-23 International Business Machines Corporation High performance semiconductor memory device with low power consumption
US6515893B1 (en) * 2001-03-28 2003-02-04 Lsi Logic Corporation Source pulsed, low voltage CMOS SRAM cell for fast, stable operation
AU2003223386A1 (en) * 2002-03-27 2003-10-13 The Regents Of The University Of California Low-power high-performance memory cell and related methods
JP4167458B2 (ja) * 2002-07-24 2008-10-15 松下電器産業株式会社 半導体メモリ装置及び半導体集積回路
US6738306B2 (en) * 2002-09-13 2004-05-18 Lattice Semiconductor Corporation SRAM cell with single-ended and differential read/write ports
JP2005166095A (ja) * 2003-11-28 2005-06-23 Seiko Epson Corp スタティック型半導体メモリ
US7754560B2 (en) * 2006-01-10 2010-07-13 Freescale Semiconductor, Inc. Integrated circuit using FinFETs and having a static random access memory (SRAM)
US8331150B2 (en) * 2008-01-03 2012-12-11 Aplus Flash Technology, Inc. Integrated SRAM and FLOTOX EEPROM memory device
JP5465919B2 (ja) * 2009-05-14 2014-04-09 ルネサスエレクトロニクス株式会社 半導体集積装置
US8345469B2 (en) 2010-09-16 2013-01-01 Freescale Semiconductor, Inc. Static random access memory (SRAM) having bit cells accessible by separate read and write paths
JP2011146121A (ja) * 2011-03-23 2011-07-28 Fujitsu Semiconductor Ltd 半導体記憶装置およびその制御方法
US9059032B2 (en) * 2011-04-29 2015-06-16 Texas Instruments Incorporated SRAM cell parameter optimization

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