JP2014007367A - 多層電子支持構造体の層間の位置合わせ - Google Patents
多層電子支持構造体の層間の位置合わせ Download PDFInfo
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- 238000000034 method Methods 0.000 claims abstract description 63
- 239000003989 dielectric material Substances 0.000 claims abstract description 24
- 229910052751 metal Inorganic materials 0.000 claims description 50
- 239000002184 metal Substances 0.000 claims description 50
- 229910052802 copper Inorganic materials 0.000 claims description 37
- 229920002120 photoresistant polymer Polymers 0.000 claims description 32
- 238000000151 deposition Methods 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 10
- 238000009713 electroplating Methods 0.000 claims description 10
- 238000005498 polishing Methods 0.000 claims description 10
- 238000005240 physical vapour deposition Methods 0.000 claims description 9
- 239000000126 substance Substances 0.000 claims description 6
- 238000003384 imaging method Methods 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- 238000007772 electroless plating Methods 0.000 claims description 4
- 238000000227 grinding Methods 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 238000011161 development Methods 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 238000004458 analytical method Methods 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 141
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 38
- 239000010949 copper Substances 0.000 description 35
- 239000000758 substrate Substances 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 13
- 238000005516 engineering process Methods 0.000 description 11
- 238000007747 plating Methods 0.000 description 11
- 238000005553 drilling Methods 0.000 description 8
- 239000011159 matrix material Substances 0.000 description 8
- 239000002131 composite material Substances 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000003365 glass fiber Substances 0.000 description 6
- 238000013459 approach Methods 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 3
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229920003192 poly(bis maleimide) Polymers 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 2
- 239000000908 ammonium hydroxide Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 238000000879 optical micrograph Methods 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 239000011253 protective coating Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229920002430 Fibre-reinforced plastic Polymers 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000002860 competitive effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011151 fibre-reinforced plastic Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000012634 optical imaging Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4679—Aligning added circuit layers or via connections relative to previous circuit layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/025—Abrading, e.g. grinding or sand blasting
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4647—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits by applying an insulating layer around previously made via studs
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Ceramic Engineering (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Structure Of Printed Boards (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
Abstract
【解決手段】誘電材料の円滑な表面およびビア柱410の同一平面上の露出端を作り出すために誘電材料を薄くして平坦化するステップと、円滑な表面を画像形成するステップと、少なくとも1個のフィーチャの端部の位置を識別するステップと、以降の層を位置合わせするための位置決めマーク404、406として少なくとも1個のビアフィーチャの端部の位置を使用するステップと、を含むプロセス。
【選択図】図4
Description
a)誘電材料の円滑な表面および金属フィーチャの同一平面上の露出端を作り出すために誘電材料を薄くしてかつ平坦化するステップと、
f)円滑な表面を画像形成するステップと、
g)少なくとも1個の金属フィーチャの端部の位置を識別するステップと、
h)位置合わせ目的のための位置決めマークとして少なくとも1個の金属フィーチャの端部の位置を使用するステップと、を含むプロセスに関する。
102、104、106 機能層またはフィーチャ層
108 フィーチャ
110、112、114、116 誘電体
118 ビア
400 多層電子支持構造体
402 配列
404 位置決めマーク
406 縁辺内の位置決めマーク
410 ビア柱
Claims (19)
- 誘電材料内に封入される金属フィーチャを備える以前の層の上の以降の層の位置合わせのためのプロセスであって、以下のステップ、すなわち、
a)誘電材料の円滑な表面および前記金属フィーチャの同一平面上の露出端を作り出すために前記誘電材料を薄くしてかつ平坦化するステップと、
e)前記円滑な表面を画像形成するステップと、
f)前記少なくとも1個の金属フィーチャの端部の位置を識別するステップと、
g)位置合わせ目的のための位置決めマークとして前記少なくとも1個の金属フィーチャの端部の前記位置を使用するステップと、を含むプロセス。 - 前記金属フィーチャが電気メッキによって製作されることを特徴とする請求項1に記載のプロセス。
- 前記金属フィーチャがビアであることを特徴とする請求項1に記載のプロセス。
- 前記少なくとも1個の金属フィーチャがビア柱であることを特徴とする請求項1に記載のプロセス。
- 前記画像形成するステップが前記少なくとも1個のフィーチャのエッジを決定するために得られる画像のコンピュータ化された光学分析を含むことを特徴とする請求項1に記載のプロセス。
- 前記円滑な表面の上にシード層を堆積するステップc)を更に含み、および前記少なくとも1個の金属フィーチャのエッジを識別するステップf)が、前記シード層を通して前記少なくとも1個の金属の端部の位置を識別するステップを含む請求項1に記載のプロセス。
- 前記薄くされた誘電層の上に接着/バリア層を、かつ前記シード層を堆積する前に堆積するステップb)を更に含む請求項6に記載のプロセス。
- 前記シード金属の上にフォトレジスト層を置くステップd)を更に含み、および
前記少なくとも1個の金属フィーチャのエッジを識別するステップf)が、前記シード層および前記フォトレジスト層を通して前記少なくとも1個の金属フィーチャの端部の前記位置を識別するステップを含む請求項7に記載のプロセス。 - 前記シード層が最高3ミクロンの厚さを有することによって特徴づけられる請求項6に記載のプロセス。
- 前記シード層が物理蒸着(PVD)または無電解メッキプロセスによって堆積されてかつNi、Au、CuおよびPdを含む群から選択される少なくとも1つの金属を備えることを特徴とする請求項6に記載のプロセス。
- 前記接着/バリア層が0.04から0.2ミクロンの間の厚さによって特徴づけられ、かつ物理蒸着プロセス(PVD)によって堆積され、かつTi、Ta、W、Ni、Cr、Pt、AlおよびCuを含む群から選択される少なくとも1つの金属を備えることを特徴とする請求項7に記載のプロセス。
- ステップ(a)が機械研削、機械研摩および化学機械研摩(CMP)を含む群から選択される技法の少なくとも1つを含むことを特徴とする請求項1に記載のプロセス。
- ビア柱の複数の端部が画像形成され、および、パターンを露光してかつ現像する間にレーザーの位置を補正するように調節をするために前記以降の層に対する前記パターンが、前記複数のビア柱からのビア柱を使用して、前記レーザーによって書き込まれることを特徴とする請求項1に記載のプロセス。
- 制御コンピュータによって自動化される請求項13に記載のプロセス。
- ビア柱の複数の端部が画像形成され、および前記ビア柱の位置がフォトマスクを配置するために使用されることを特徴とする請求項1に記載のプロセス。
- +−10ミクロンよりよい位置合わせが達成できることを特徴とする請求項1に記載のプロセス。
- +−3ミクロンよりよい位置合わせが達成できることを特徴とする請求項1に記載のプロセス。
- 位置合わせ目的のために使用される前記少なくとも1個のフィーチャが、少なくとも1つの直線のエッジを含む断面を有することを特徴とする請求項1に記載のプロセス。
- 位置合わせ目的のために使用される前記少なくとも1個のフィーチャが、少なくとも2つの垂直な直線のエッジを含む断面を有することを特徴とする請求項1に記載のプロセス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/531,948 US9137905B2 (en) | 2012-06-25 | 2012-06-25 | Alignment between layers of multilayer electronic support structures |
US13/531,948 | 2012-06-25 |
Publications (2)
Publication Number | Publication Date |
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JP2014007367A true JP2014007367A (ja) | 2014-01-16 |
JP6264597B2 JP6264597B2 (ja) | 2018-01-24 |
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JP2012213862A Active JP6264597B2 (ja) | 2012-06-25 | 2012-09-27 | 多層電子支持構造体の層間の位置合わせ |
Country Status (5)
Country | Link |
---|---|
US (1) | US9137905B2 (ja) |
JP (1) | JP6264597B2 (ja) |
KR (1) | KR20140000609A (ja) |
CN (1) | CN103187365B (ja) |
TW (1) | TWI580326B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2016004994A (ja) * | 2014-06-16 | 2016-01-12 | 恆勁科技股▲ふん▼有限公司 | パッケージ装置及びその製造方法 |
Families Citing this family (3)
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US9240392B2 (en) * | 2014-04-09 | 2016-01-19 | Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co., Ltd. | Method for fabricating embedded chips |
CN104270885A (zh) * | 2014-05-05 | 2015-01-07 | 珠海越亚封装基板技术股份有限公司 | 具有聚合物基质的插件框架及其制造方法 |
WO2016023161A1 (zh) * | 2014-08-11 | 2016-02-18 | 深圳崇达多层线路板有限公司 | 一种排板装置及排板方法 |
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2012
- 2012-06-25 US US13/531,948 patent/US9137905B2/en active Active
- 2012-09-12 KR KR1020120100963A patent/KR20140000609A/ko active Search and Examination
- 2012-09-27 JP JP2012213862A patent/JP6264597B2/ja active Active
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2013
- 2013-03-04 CN CN201310068406.9A patent/CN103187365B/zh active Active
- 2013-03-06 TW TW102107895A patent/TWI580326B/zh active
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JP2006186123A (ja) * | 2004-12-28 | 2006-07-13 | Oki Electric Ind Co Ltd | 半導体装置およびその製造方法 |
WO2009028538A1 (ja) * | 2007-08-27 | 2009-03-05 | Nec Corporation | 半導体素子及びその製造方法 |
JP2012033776A (ja) * | 2010-07-30 | 2012-02-16 | Brother Ind Ltd | 積層基板およびその製造方法 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP2016004994A (ja) * | 2014-06-16 | 2016-01-12 | 恆勁科技股▲ふん▼有限公司 | パッケージ装置及びその製造方法 |
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CN103187365B (zh) | 2017-04-12 |
CN103187365A (zh) | 2013-07-03 |
JP6264597B2 (ja) | 2018-01-24 |
TWI580326B (zh) | 2017-04-21 |
US9137905B2 (en) | 2015-09-15 |
US20130344628A1 (en) | 2013-12-26 |
TW201404261A (zh) | 2014-01-16 |
KR20140000609A (ko) | 2014-01-03 |
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