JP2014006518A - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP2014006518A
JP2014006518A JP2013112886A JP2013112886A JP2014006518A JP 2014006518 A JP2014006518 A JP 2014006518A JP 2013112886 A JP2013112886 A JP 2013112886A JP 2013112886 A JP2013112886 A JP 2013112886A JP 2014006518 A JP2014006518 A JP 2014006518A
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JP
Japan
Prior art keywords
transistor
layer
film
light receiving
oxide semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
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JP2013112886A
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English (en)
Japanese (ja)
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JP2014006518A5 (enExample
Inventor
Jun Koyama
潤 小山
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2013112886A priority Critical patent/JP2014006518A/ja
Publication of JP2014006518A publication Critical patent/JP2014006518A/ja
Publication of JP2014006518A5 publication Critical patent/JP2014006518A5/ja
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/042—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by opto-electronic means
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/198—Contact-type image sensors [CIS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/813—Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Human Computer Interaction (AREA)
  • Chemical & Material Sciences (AREA)
  • Mathematical Physics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Position Input By Displaying (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Liquid Crystal (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2013112886A 2012-05-29 2013-05-29 半導体装置 Withdrawn JP2014006518A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2013112886A JP2014006518A (ja) 2012-05-29 2013-05-29 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012122521 2012-05-29
JP2012122521 2012-05-29
JP2013112886A JP2014006518A (ja) 2012-05-29 2013-05-29 半導体装置

Publications (2)

Publication Number Publication Date
JP2014006518A true JP2014006518A (ja) 2014-01-16
JP2014006518A5 JP2014006518A5 (enExample) 2016-04-07

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013112886A Withdrawn JP2014006518A (ja) 2012-05-29 2013-05-29 半導体装置

Country Status (2)

Country Link
US (2) US9147706B2 (enExample)
JP (1) JP2014006518A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021005088A (ja) * 2020-08-18 2021-01-14 株式会社ジャパンディスプレイ 入力機能付き表示装置
JP2021158375A (ja) * 2015-10-09 2021-10-07 株式会社半導体エネルギー研究所 撮像装置

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Publication number Priority date Publication date Assignee Title
US9153699B2 (en) 2012-06-15 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
US9817520B2 (en) 2013-05-20 2017-11-14 Semiconductor Energy Laboratory Co., Ltd. Imaging panel and imaging device
KR102092844B1 (ko) * 2013-10-25 2020-04-14 엘지디스플레이 주식회사 액정 디스플레이 장치와 이의 제조 방법
KR102234434B1 (ko) * 2013-12-27 2021-04-02 삼성디스플레이 주식회사 표시패널 및 그 제조방법
US9881954B2 (en) 2014-06-11 2018-01-30 Semiconductor Energy Laboratory Co., Ltd. Imaging device
JP6570417B2 (ja) 2014-10-24 2019-09-04 株式会社半導体エネルギー研究所 撮像装置および電子機器
US10522693B2 (en) 2015-01-16 2019-12-31 Semiconductor Energy Laboratory Co., Ltd. Memory device and electronic device
WO2016136611A1 (ja) * 2015-02-27 2016-09-01 Ｊｘ金属株式会社 酸化物焼結体及び該酸化物焼結体からなるスパッタリングターゲット
JP2016173814A (ja) * 2015-03-17 2016-09-29 株式会社半導体エネルギー研究所 情報処理装置、プログラム
KR101932371B1 (ko) * 2015-03-23 2018-12-24 제이엑스금속주식회사 산화물 소결체 및 그 산화물 소결체로 이루어지는 스퍼터링 타깃
US11036321B2 (en) * 2018-07-27 2021-06-15 Lg Display Co., Ltd. Light control film and display apparatus including the same
US20200111815A1 (en) * 2018-10-09 2020-04-09 Innolux Corporation Display device

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