JP2013544031A5 - - Google Patents

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Publication number
JP2013544031A5
JP2013544031A5 JP2013538230A JP2013538230A JP2013544031A5 JP 2013544031 A5 JP2013544031 A5 JP 2013544031A5 JP 2013538230 A JP2013538230 A JP 2013538230A JP 2013538230 A JP2013538230 A JP 2013538230A JP 2013544031 A5 JP2013544031 A5 JP 2013544031A5
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JP
Japan
Prior art keywords
chamber
intermediate chamber
aperture array
aperture
array element
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JP2013538230A
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English (en)
Japanese (ja)
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JP6049627B2 (ja
JP2013544031A (ja
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Priority claimed from PCT/EP2011/070077 external-priority patent/WO2012062932A1/en
Publication of JP2013544031A publication Critical patent/JP2013544031A/ja
Publication of JP2013544031A5 publication Critical patent/JP2013544031A5/ja
Application granted granted Critical
Publication of JP6049627B2 publication Critical patent/JP6049627B2/ja
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JP2013538230A 2010-11-13 2011-11-14 中間チャンバを備えた荷電粒子リソグラフィシステム Active JP6049627B2 (ja)

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US41339610P 2010-11-13 2010-11-13
US61/413,396 2010-11-13
US41523210P 2010-11-18 2010-11-18
US61/415,232 2010-11-18
US42171710P 2010-12-10 2010-12-10
US61/421,717 2010-12-10
US201161443466P 2011-02-16 2011-02-16
US61/443,466 2011-02-16
US201161477688P 2011-04-21 2011-04-21
US61/477,688 2011-04-21
PCT/EP2011/070077 WO2012062932A1 (en) 2010-11-13 2011-11-14 Charged particle lithography system with intermediate chamber

Publications (3)

Publication Number Publication Date
JP2013544031A JP2013544031A (ja) 2013-12-09
JP2013544031A5 true JP2013544031A5 (https=) 2015-01-15
JP6049627B2 JP6049627B2 (ja) 2016-12-21

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ID=45065872

Family Applications (1)

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JP2013538230A Active JP6049627B2 (ja) 2010-11-13 2011-11-14 中間チャンバを備えた荷電粒子リソグラフィシステム

Country Status (4)

Country Link
US (2) US8586949B2 (https=)
JP (1) JP6049627B2 (https=)
TW (1) TWI517196B (https=)
WO (1) WO2012062932A1 (https=)

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KR101755577B1 (ko) * 2010-11-13 2017-07-07 마퍼 리쏘그라피 아이피 비.브이. 애퍼처 어레이 냉각장치를 갖춘 하전 입자 리소그래피 시스템
US8586949B2 (en) * 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
NL2007604C2 (en) * 2011-10-14 2013-05-01 Mapper Lithography Ip Bv Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams.
CN104272427B (zh) * 2012-03-08 2017-05-17 迈普尔平版印刷Ip有限公司 具有对准传感器和射束测量传感器的带电粒子光刻系统
KR101945964B1 (ko) * 2012-05-14 2019-02-11 마퍼 리쏘그라피 아이피 비.브이. 하전 입자 다중-빔렛 리소그래피 시스템 및 냉각 장치 제조 방법
CN104428866A (zh) 2012-05-14 2015-03-18 迈普尔平版印刷Ip有限公司 带电粒子光刻系统和射束产生器
US11348756B2 (en) 2012-05-14 2022-05-31 Asml Netherlands B.V. Aberration correction in charged particle system
US10586625B2 (en) * 2012-05-14 2020-03-10 Asml Netherlands B.V. Vacuum chamber arrangement for charged particle beam generator
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EP3610493A4 (en) * 2017-04-11 2021-07-07 ASML Netherlands B.V. CHARGE PARTICLE SOURCE MODULE
CN111108582B (zh) 2017-08-08 2024-07-05 Asml荷兰有限公司 带电粒子阻挡元件、包括这样的元件的曝光装置以及使用这样的曝光装置的方法
JP7073668B2 (ja) * 2017-10-25 2022-05-24 株式会社ニューフレアテクノロジー マルチ荷電粒子ビーム描画装置
DE102019005362A1 (de) * 2019-07-31 2021-02-04 Carl Zeiss Multisem Gmbh Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem
KR20240096776A (ko) * 2021-11-09 2024-06-26 가부시키가이샤 포토 일렉트론 소울 전자총, 전자선 적용 장치 및 멀티 전자빔의 형성 방법
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US8586949B2 (en) * 2010-11-13 2013-11-19 Mapper Lithography Ip B.V. Charged particle lithography system with intermediate chamber
WO2012062854A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Lithography system and method of refracting
KR101755577B1 (ko) * 2010-11-13 2017-07-07 마퍼 리쏘그라피 아이피 비.브이. 애퍼처 어레이 냉각장치를 갖춘 하전 입자 리소그래피 시스템
WO2012062934A1 (en) * 2010-11-13 2012-05-18 Mapper Lithography Ip B.V. Charged particle beam modulator
EP2681624B1 (en) * 2010-12-14 2016-07-20 Mapper Lithography IP B.V. Lithography system and method of processing substrates in such a lithography system

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