TWI517196B - 具有中間腔室的帶電粒子微影系統 - Google Patents
具有中間腔室的帶電粒子微影系統 Download PDFInfo
- Publication number
- TWI517196B TWI517196B TW100141410A TW100141410A TWI517196B TW I517196 B TWI517196 B TW I517196B TW 100141410 A TW100141410 A TW 100141410A TW 100141410 A TW100141410 A TW 100141410A TW I517196 B TWI517196 B TW I517196B
- Authority
- TW
- Taiwan
- Prior art keywords
- chamber
- slot
- slot array
- intermediate chamber
- array
- Prior art date
Links
- 238000001459 lithography Methods 0.000 title claims description 49
- 239000002245 particle Substances 0.000 title claims description 46
- 238000001816 cooling Methods 0.000 claims description 21
- 238000005086 pumping Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 239000002826 coolant Substances 0.000 claims description 5
- 230000008033 biological extinction Effects 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 3
- 238000012546 transfer Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 description 29
- 229930195733 hydrocarbon Natural products 0.000 description 14
- 150000002430 hydrocarbons Chemical class 0.000 description 14
- 238000010894 electron beam technology Methods 0.000 description 13
- 235000012431 wafers Nutrition 0.000 description 13
- 238000000313 electron-beam-induced deposition Methods 0.000 description 11
- 239000000356 contaminant Substances 0.000 description 9
- 230000002829 reductive effect Effects 0.000 description 8
- 239000004215 Carbon black (E152) Substances 0.000 description 7
- 230000001143 conditioned effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 7
- 230000036961 partial effect Effects 0.000 description 6
- 239000000835 fiber Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 238000003491 array Methods 0.000 description 4
- 230000000670 limiting effect Effects 0.000 description 4
- 230000001012 protector Effects 0.000 description 4
- 238000002955 isolation Methods 0.000 description 3
- 238000012423 maintenance Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000004364 calculation method Methods 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000013500 data storage Methods 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 229910001149 41xx steel Inorganic materials 0.000 description 1
- 241001595898 Monophlebidae Species 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 201000009310 astigmatism Diseases 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 238000002039 particle-beam lithography Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 230000011218 segmentation Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/16—Vessels; Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/18—Vacuum locks ; Means for obtaining or maintaining the desired pressure within the vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/301—Arrangements enabling beams to pass between regions of different pressure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
- H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/043—Beam blanking
- H01J2237/0435—Multi-aperture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0451—Diaphragms with fixed aperture
- H01J2237/0453—Diaphragms with fixed aperture multiple apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/18—Vacuum control means
- H01J2237/188—Differential pressure
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Analytical Chemistry (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Electron Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41339610P | 2010-11-13 | 2010-11-13 | |
| US41523210P | 2010-11-18 | 2010-11-18 | |
| US42171710P | 2010-12-10 | 2010-12-10 | |
| US201161443466P | 2011-02-16 | 2011-02-16 | |
| US201161477688P | 2011-04-21 | 2011-04-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201239940A TW201239940A (en) | 2012-10-01 |
| TWI517196B true TWI517196B (zh) | 2016-01-11 |
Family
ID=45065872
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100141410A TWI517196B (zh) | 2010-11-13 | 2011-11-14 | 具有中間腔室的帶電粒子微影系統 |
Country Status (4)
| Country | Link |
|---|---|
| US (2) | US8586949B2 (https=) |
| JP (1) | JP6049627B2 (https=) |
| TW (1) | TWI517196B (https=) |
| WO (1) | WO2012062932A1 (https=) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2012062932A1 (en) * | 2010-11-13 | 2012-05-18 | Mapper Lithography Ip B.V. | Charged particle lithography system with intermediate chamber |
| EP2638560B1 (en) * | 2010-11-13 | 2017-02-22 | Mapper Lithography IP B.V. | Charged particle lithography system with aperture array cooling |
| NL2007604C2 (en) * | 2011-10-14 | 2013-05-01 | Mapper Lithography Ip Bv | Charged particle system comprising a manipulator device for manipulation of one or more charged particle beams. |
| WO2013132064A2 (en) * | 2012-03-08 | 2013-09-12 | Mapper Lithography Ip B.V. | Charged particle lithography system with alignment sensor and beam measurement sensor |
| US10586625B2 (en) * | 2012-05-14 | 2020-03-10 | Asml Netherlands B.V. | Vacuum chamber arrangement for charged particle beam generator |
| US11348756B2 (en) | 2012-05-14 | 2022-05-31 | Asml Netherlands B.V. | Aberration correction in charged particle system |
| EP2850635B1 (en) * | 2012-05-14 | 2016-04-27 | Mapper Lithography IP B.V. | Charged particle multi-beamlet lithography system and cooling arrangement manufacturing method |
| CN107359101B (zh) | 2012-05-14 | 2019-07-12 | Asml荷兰有限公司 | 带电粒子射束产生器中的高电压屏蔽和冷却 |
| NL2013814B1 (en) * | 2013-11-14 | 2016-05-10 | Mapper Lithography Ip Bv | Multi-electrode vacuum arrangement. |
| US9666404B2 (en) * | 2015-02-18 | 2017-05-30 | ICT Integrated Circuit Testing Gesellschaft für Halbleiteprüftechnik mbH | Charged particle source arrangement for a charged particle beam device, charged particle beam device for sample inspection, and method for providing a primary charged particle beam for sample inspection in a charged particle beam |
| US10312091B1 (en) * | 2015-10-13 | 2019-06-04 | Multibeam Corporation | Secure permanent integrated circuit personalization |
| JP2017199610A (ja) * | 2016-04-28 | 2017-11-02 | 株式会社ニューフレアテクノロジー | ステージ機構 |
| IT201600082446A1 (it) * | 2016-08-04 | 2018-02-04 | Consorzio Di Ricerca Hypatia | Macchina per la stampa 3d a fascio di elettroni |
| CN110622276B (zh) * | 2017-04-11 | 2022-07-08 | Asml荷兰有限公司 | 带电粒子源模块 |
| KR102876293B1 (ko) * | 2017-08-08 | 2025-10-27 | 에이에스엠엘 네델란즈 비.브이. | 하전 입자 차단 요소, 이러한 요소를 포함하는 노광 장치, 및 이러한 노광 장치를 사용하는 방법 |
| JP7073668B2 (ja) * | 2017-10-25 | 2022-05-24 | 株式会社ニューフレアテクノロジー | マルチ荷電粒子ビーム描画装置 |
| DE102019005362A1 (de) * | 2019-07-31 | 2021-02-04 | Carl Zeiss Multisem Gmbh | Verfahren zum Betreiben eines Vielzahl-Teilchenstrahlsystems unter Veränderung der numerischen Apertur, zugehöriges Computerprogrammprodukt und Vielzahl-Teilchenstrahlsystem |
| JP7080533B1 (ja) | 2021-11-09 | 2022-06-06 | 株式会社Photo electron Soul | 電子銃、電子線適用装置およびマルチ電子ビームの形成方法 |
| EP4432328A4 (en) * | 2021-11-09 | 2025-11-05 | Photo Electron Soul Inc | Electron gun, electron beam application device and multi-electron beam formation method |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT393334B (de) * | 1988-01-22 | 1991-09-25 | Ims Ionen Mikrofab Syst | Anordnung zur stabilisierung einer bestrahlten maske |
| JPH0777208B2 (ja) * | 1992-05-12 | 1995-08-16 | 工業技術院長 | 微細パターン形成方法 |
| JPH0669111A (ja) * | 1992-08-20 | 1994-03-11 | Hitachi Ltd | 真空排気方法 |
| JP3908294B2 (ja) * | 1996-02-02 | 2007-04-25 | 富士通株式会社 | 電子ビームの電流量を削減する電子ビーム露光装置及び電子ビーム露光方法 |
| JP4355446B2 (ja) * | 2000-12-28 | 2009-11-04 | 株式会社アドバンテスト | 電子ビーム露光装置及び電子ビーム成形部材 |
| EP2302457B1 (en) | 2002-10-25 | 2016-03-30 | Mapper Lithography Ip B.V. | Lithography system |
| CN101414534B (zh) | 2002-10-30 | 2012-10-03 | 迈普尔平版印刷Ip有限公司 | 电子束曝光系统 |
| KR101068607B1 (ko) | 2003-03-10 | 2011-09-30 | 마퍼 리쏘그라피 아이피 비.브이. | 복수 개의 빔렛 발생 장치 |
| ATE524822T1 (de) | 2003-05-28 | 2011-09-15 | Mapper Lithography Ip Bv | Belichtungsverfahren für strahlen aus geladenen teilchen |
| JP2005203123A (ja) * | 2004-01-13 | 2005-07-28 | Sony Corp | 荷電粒子ビーム装置。 |
| JP4406311B2 (ja) * | 2004-03-31 | 2010-01-27 | 株式会社荏原製作所 | エネルギー線照射装置およびそれを用いたパタン作成方法 |
| JP4262158B2 (ja) * | 2004-07-13 | 2009-05-13 | 株式会社日立ハイテクサイエンスシステムズ | 低真空走査電子顕微鏡 |
| JP3929459B2 (ja) * | 2004-11-11 | 2007-06-13 | 株式会社日立ハイテクノロジーズ | 荷電粒子線露光装置 |
| US20060181689A1 (en) | 2005-02-14 | 2006-08-17 | Nikon Corporation | Lithographic-optical systems including isolatable vacuum chambers, and lithography apparatus comprising same |
| JP4977399B2 (ja) * | 2005-11-10 | 2012-07-18 | 株式会社日立ハイテクノロジーズ | 荷電粒子線装置 |
| JP2007165837A (ja) * | 2005-11-17 | 2007-06-28 | E-Beam Corp | 基板処理装置及び基板処理方法 |
| JP2007165232A (ja) * | 2005-12-16 | 2007-06-28 | Hitachi High-Technologies Corp | 荷電粒子線装置 |
| US7781748B2 (en) * | 2006-04-03 | 2010-08-24 | Ims Nanofabrication Ag | Particle-beam exposure apparatus with overall-modulation of a patterned beam |
| EP1983548A1 (en) | 2007-04-20 | 2008-10-22 | ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH | Emitter chamber, charged particle apparatus and method for operating same |
| US8688254B2 (en) | 2007-06-15 | 2014-04-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple tools using a single data processing unit |
| CN102422380A (zh) * | 2009-02-22 | 2012-04-18 | 迈普尔平版印刷Ip有限公司 | 带电粒子微影设备及真空腔室中产生真空的方法 |
| KR101687955B1 (ko) | 2009-02-22 | 2016-12-20 | 마퍼 리쏘그라피 아이피 비.브이. | 하전입자 리소그래피 장치 및 진공 챔버에 진공을 발생시키는 방법 |
| WO2012062854A1 (en) * | 2010-11-13 | 2012-05-18 | Mapper Lithography Ip B.V. | Lithography system and method of refracting |
| US8604411B2 (en) * | 2010-11-13 | 2013-12-10 | Mapper Lithography Ip B.V. | Charged particle beam modulator |
| WO2012062932A1 (en) * | 2010-11-13 | 2012-05-18 | Mapper Lithography Ip B.V. | Charged particle lithography system with intermediate chamber |
| EP2638560B1 (en) * | 2010-11-13 | 2017-02-22 | Mapper Lithography IP B.V. | Charged particle lithography system with aperture array cooling |
| JP6158091B2 (ja) * | 2010-12-14 | 2017-07-05 | マッパー・リソグラフィー・アイピー・ビー．ブイ． | リソグラフィシステム及びこのようなリソグラフィシステムで基板を処理する方法 |
-
2011
- 2011-11-14 WO PCT/EP2011/070077 patent/WO2012062932A1/en not_active Ceased
- 2011-11-14 JP JP2013538230A patent/JP6049627B2/ja active Active
- 2011-11-14 TW TW100141410A patent/TWI517196B/zh active
- 2011-11-14 US US13/295,249 patent/US8586949B2/en active Active
-
2013
- 2013-10-24 US US14/061,847 patent/US8916837B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2013544031A (ja) | 2013-12-09 |
| JP6049627B2 (ja) | 2016-12-21 |
| TW201239940A (en) | 2012-10-01 |
| US8916837B2 (en) | 2014-12-23 |
| US8586949B2 (en) | 2013-11-19 |
| US20140061497A1 (en) | 2014-03-06 |
| WO2012062932A1 (en) | 2012-05-18 |
| US20120293780A1 (en) | 2012-11-22 |
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