JP2013543280A5 - - Google Patents

Download PDF

Info

Publication number
JP2013543280A5
JP2013543280A5 JP2013539854A JP2013539854A JP2013543280A5 JP 2013543280 A5 JP2013543280 A5 JP 2013543280A5 JP 2013539854 A JP2013539854 A JP 2013539854A JP 2013539854 A JP2013539854 A JP 2013539854A JP 2013543280 A5 JP2013543280 A5 JP 2013543280A5
Authority
JP
Japan
Prior art keywords
component
wavelength converter
semiconductor
bonding layer
adjacent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013539854A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013543280A (ja
JP6132770B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2011/057635 external-priority patent/WO2012067766A2/en
Publication of JP2013543280A publication Critical patent/JP2013543280A/ja
Publication of JP2013543280A5 publication Critical patent/JP2013543280A5/ja
Application granted granted Critical
Publication of JP6132770B2 publication Critical patent/JP6132770B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2013539854A 2010-11-18 2011-10-25 ポリシラザン接合層を含む発光ダイオードコンポーネント Expired - Fee Related JP6132770B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41511510P 2010-11-18 2010-11-18
US61/415,115 2010-11-18
PCT/US2011/057635 WO2012067766A2 (en) 2010-11-18 2011-10-25 Light emitting diode component comprising polysilazane bonding layer

Publications (3)

Publication Number Publication Date
JP2013543280A JP2013543280A (ja) 2013-11-28
JP2013543280A5 true JP2013543280A5 (https=) 2014-12-18
JP6132770B2 JP6132770B2 (ja) 2017-05-24

Family

ID=46084569

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013539854A Expired - Fee Related JP6132770B2 (ja) 2010-11-18 2011-10-25 ポリシラザン接合層を含む発光ダイオードコンポーネント

Country Status (7)

Country Link
US (1) US9041034B2 (https=)
EP (1) EP2641277A4 (https=)
JP (1) JP6132770B2 (https=)
KR (1) KR20130128420A (https=)
CN (1) CN103222076B (https=)
TW (1) TWI581456B (https=)
WO (1) WO2012067766A2 (https=)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010034923A1 (de) * 2010-08-20 2012-02-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Schichtverbunds aus einer Lumineszenzkonversionsschicht und einer Streuschicht
DE102011100728A1 (de) * 2011-05-06 2012-11-08 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
JP5881689B2 (ja) * 2011-05-25 2016-03-09 Ｄｏｗａエレクトロニクス株式会社 発光素子チップ及びその製造方法
JP6276265B2 (ja) 2012-08-06 2018-02-07 コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． 固体照明に対する高安定なｑｄ複合体及び開始剤のない重合を介したその作製方法
DE102012108939A1 (de) * 2012-09-21 2014-03-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement umfassend ein transparentes Auskoppelelement
DE102012217776A1 (de) * 2012-09-28 2014-06-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
CN105378948B (zh) * 2013-07-18 2020-08-28 亮锐控股有限公司 切分发光器件的晶片
US9991182B2 (en) * 2013-07-19 2018-06-05 Az Electronic Materials (Luxembourg) S.A.R.L. Encapsulation material for light emitting diodes
WO2015013864A1 (zh) 2013-07-29 2015-02-05 晶元光电股份有限公司 选择性转移半导体元件的方法
TWI766580B (zh) * 2013-07-29 2022-06-01 晶元光電股份有限公司 一種半導體裝置
TWI722242B (zh) * 2013-07-29 2021-03-21 晶元光電股份有限公司 一種半導體裝置
US9935246B2 (en) 2013-12-30 2018-04-03 Cree, Inc. Silazane-containing materials for light emitting diodes
US9252121B2 (en) * 2014-01-23 2016-02-02 International Business Machines Corporation Thermal interface material on package
EP2913355A1 (en) * 2014-02-28 2015-09-02 AZ Electronic Materials (Germany) GmbH Hybrid material for optoelectronic applications
EP3110881B1 (en) * 2014-02-28 2018-06-06 AZ Electronic Materials (Luxembourg) S.à.r.l. Hybrid material for optoelectronic applications
KR102311677B1 (ko) 2014-08-13 2021-10-12 삼성전자주식회사 반도체소자 및 그 제조방법
WO2016027186A1 (en) * 2014-08-19 2016-02-25 Koninklijke Philips N.V. Sapphire collector for reducing mechanical damage during die level laser lift-off
JP6807334B2 (ja) * 2015-05-13 2021-01-06 ルミレッズ ホールディング ベーフェー ダイレベルのリフトオフの最中におけるメカニカルダメージを低減するためのサファイアコレクタ
WO2017057454A1 (ja) * 2015-09-30 2017-04-06 東レ株式会社 発光装置の製造方法および表示装置の製造方法
KR102499548B1 (ko) 2015-11-06 2023-03-03 엘지이노텍 주식회사 발광패키지 및 이를 포함하는 차량용 헤드램프
EP3484950B1 (en) 2016-07-18 2021-09-15 Merck Patent GmbH Formulation for led encapsulation material
KR102191894B1 (ko) 2016-07-18 2020-12-17 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. Led 밀봉 물질용 제형
JP6911541B2 (ja) * 2017-05-31 2021-07-28 セイコーエプソン株式会社 発光装置およびプロジェクター
DE102017124559B4 (de) * 2017-10-20 2024-05-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Epitaxie-Wellenlängenkonversionselement, Licht emittierendes Halbleiterbauelement sowie Verfahren zur Herstellung des Epitaxie-Wellenlängenkonversionselements und des Licht emittierenden Halbleiterbauelements
EP3803976B1 (en) 2018-05-24 2024-05-22 Lumiode, Inc. Led display structures and fabrication of same
WO2020083717A1 (en) * 2018-10-22 2020-04-30 Lumileds Holding B.V. A method of manufacturing a light converting device
EP3899920A4 (en) 2018-12-21 2022-09-28 Lumiode, Inc. ADDRESSING FOR EMISSIVE INDICATORS
US11584882B2 (en) * 2020-02-14 2023-02-21 Osram Opto Semiconductors Gmbh Wavelength converter; method of its making and light-emitting device incorporating the element

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3519516A (en) 1967-02-17 1970-07-07 Dmitry Yakovlevich Zhinkin Method for bonding siloxane rubberbase vulcanizates using a polysilazane adhesive
US4642126A (en) 1985-02-11 1987-02-10 Norton Company Coated abrasives with rapidly curable adhesives and controllable curvature
US4652274A (en) 1985-08-07 1987-03-24 Minnesota Mining And Manufacturing Company Coated abrasive product having radiation curable binder
CA1323949C (en) 1987-04-02 1993-11-02 Michael C. Palazzotto Ternary photoinitiator system for addition polymerization
US4929704A (en) * 1988-12-20 1990-05-29 Hercules Incorporated Isocyanate- and isothiocyanate-modified polysilazane ceramic precursors
US5208192A (en) * 1990-01-12 1993-05-04 Ethyl Corporation Preceramic polysilazane compositions
US5457151A (en) 1991-09-24 1995-10-10 Southwest Research Institute Polysilazane adhesive composition
US5616650A (en) 1993-11-05 1997-04-01 Lanxide Technology Company, Lp Metal-nitrogen polymer compositions comprising organic electrophiles
JP3482423B2 (ja) * 1994-12-20 2003-12-22 クラリアント ジャパン 株式会社 光ファイバの製造方法
JPH08236274A (ja) * 1994-12-28 1996-09-13 Tonen Corp エレクトロルミネッセンス素子
US5801073A (en) * 1995-05-25 1998-09-01 Charles Stark Draper Laboratory Net-shape ceramic processing for electronic devices and packages
JP3771298B2 (ja) * 1995-05-30 2006-04-26 クラリアント インターナショナル リミティド ポリシラザン組成物
EP0764704B1 (en) * 1995-09-25 2000-03-08 Dow Corning Corporation Use of preceramic polymers as electronic adhesives
US6268432B1 (en) * 1998-10-01 2001-07-31 Dow Corning Toray Silicone Co. Ltd. Filler/adhesive agent for display units containing a curable silicone composition
JP3503131B2 (ja) * 1999-06-03 2004-03-02 サンケン電気株式会社 半導体発光装置
HK1048709A1 (zh) 1999-12-03 2003-04-11 Cree, Inc. 透过使用内置及外置光元件提高发光二极管(led)中的抽光效果
US6709806B2 (en) * 2000-03-31 2004-03-23 Kabushiki Kaisha Toshiba Method of forming composite member
TW515223B (en) 2000-07-24 2002-12-21 Tdk Corp Light emitting device
JP2002267906A (ja) * 2001-03-09 2002-09-18 Hitachi Koki Co Ltd 光学部品の接合構造
JP2003118030A (ja) * 2001-10-16 2003-04-23 Asahi Glass Co Ltd ガスバリヤ性有機基材およびそれを用いたエレクトロルミネッセンス素子
JP2005056587A (ja) * 2003-08-01 2005-03-03 Toyota Industries Corp Ｅｌ装置及びその製造方法
JP4788109B2 (ja) * 2003-10-28 2011-10-05 パナソニック電工株式会社 半導体発光装置及びその製造方法
TW200538522A (en) * 2004-02-16 2005-12-01 Hitachi Chemical Co Ltd Adhesive composition, film-formed adhesive and circuit-joining material by using the same, and joining structure of circuit member and method for producing the same
JP2005294820A (ja) * 2004-03-12 2005-10-20 Showa Denko Kk Ｉｉｉ族窒化物半導体発光素子及びその形成方法、それを用いたランプ、光源
US7576365B2 (en) 2004-03-12 2009-08-18 Showa Denko K.K. Group III nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same
WO2005121841A1 (ja) * 2004-06-11 2005-12-22 Zeon Corporation 反射防止積層体および光学部材
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US7402831B2 (en) 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7297374B1 (en) * 2004-12-29 2007-11-20 3M Innovative Properties Company Single- and multi-photon polymerizable pre-ceramic polymeric compositions
JP5490407B2 (ja) 2005-03-14 2014-05-14 コーニンクレッカ フィリップス エヌ ヴェ 多結晶セラミック構造の蛍光体、及び前記蛍光体を有する発光素子
JP2007042686A (ja) * 2005-07-29 2007-02-15 Toshiba Lighting & Technology Corp 発光ダイオード装置
JP5032043B2 (ja) * 2006-03-27 2012-09-26 豊田合成株式会社 フェラスメタルアルカリ土類金属ケイ酸塩混合結晶蛍光体およびこれを用いた発光装置
JP2009540616A (ja) 2006-06-12 2009-11-19 スリーエム イノベイティブ プロパティズ カンパニー 再発光半導体構造物を有するｌｅｄ装置及び集束光学要素
WO2008083188A2 (en) 2006-12-29 2008-07-10 3M Innovative Properties Company Led light source with converging extractor in an optical element
JP4927019B2 (ja) * 2007-04-10 2012-05-09 信越化学工業株式会社 蛍光体含有接着性シリコーン組成物、該組成物からなる組成物シート、及び該シートを使用する発光装置の製造方法
CN101821866B (zh) * 2007-10-08 2012-05-23 3M创新有限公司 具有粘接的半导体波长转换器的发光二极管
US20120181919A1 (en) * 2008-08-27 2012-07-19 Osram Sylvania Inc. Luminescent Ceramic Composite Converter and Method of Making the Same
US20100167002A1 (en) * 2008-12-30 2010-07-01 Vitex Systems, Inc. Method for encapsulating environmentally sensitive devices
EP2406321A1 (en) * 2009-03-12 2012-01-18 Dow Corning Corporation Thermal interface materials and methods for their preparation and use
JP5477374B2 (ja) * 2009-03-27 2014-04-23 コニカミノルタ株式会社 蛍光体部材、蛍光体部材の製造方法、及び照明装置
CN102460741A (zh) * 2009-05-05 2012-05-16 3M创新有限公司 具有增大的提取效率的再发光半导体构造
KR20120015337A (ko) * 2009-05-05 2012-02-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Ｌｅｄ에서 사용하기 위한 재방출 반도체 캐리어 디바이스 및 제조 방법

Similar Documents

Publication Publication Date Title
JP2013543280A5 (https=)
WO2012067766A3 (en) Light emitting diode component comprising polysilazane bonding layer
JP2010541295A5 (https=)
WO2009048704A3 (en) Light emitting diode with bonded semiconductor wavelength converter
JP2010192629A5 (https=)
CN104471730B (zh) 发光器件和创建发光器件的方法
JP2016538689A5 (https=)
JP2011507272A5 (https=)
WO2012108627A3 (en) Light emitting diode having photonic crystal structure and method of fabricating the same
WO2009156856A3 (en) Led with improved external light extraction efficiency
EP2230700A3 (en) Light emitting diode package structure and manufacturing method thereof
JP2014529169A5 (https=)
CN110010746A (zh) 具有磷光体转换器的无胶发光器件
JP2011523212A5 (https=)
JP2012142270A5 (ja) 発光装置
JP2011188001A5 (https=)
WO2009088410A3 (en) Light emitting devices with high efficiency phospor structures
JP2012109230A5 (https=)
JP2010182668A5 (ja) 発光装置
WO2012164437A3 (en) Light emitting device bonded to a support substrate
JP2013016469A5 (https=)
EP2863446A3 (en) Flexible organic light emitting diode display and manufacturing method thereof
EP2355195A3 (en) Semiconductor light-emitting device, its encapsulation sheet and method for producing said device
JP2014515560A5 (https=)
JP2016521013A5 (https=)