JP2013543280A5 - - Google Patents

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Publication number
JP2013543280A5
JP2013543280A5 JP2013539854A JP2013539854A JP2013543280A5 JP 2013543280 A5 JP2013543280 A5 JP 2013543280A5 JP 2013539854 A JP2013539854 A JP 2013539854A JP 2013539854 A JP2013539854 A JP 2013539854A JP 2013543280 A5 JP2013543280 A5 JP 2013543280A5
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JP
Japan
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component
wavelength converter
semiconductor
bonding layer
adjacent
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JP2013539854A
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English (en)
Japanese (ja)
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JP6132770B2 (ja
JP2013543280A (ja
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Priority claimed from PCT/US2011/057635 external-priority patent/WO2012067766A2/en
Publication of JP2013543280A publication Critical patent/JP2013543280A/ja
Publication of JP2013543280A5 publication Critical patent/JP2013543280A5/ja
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Publication of JP6132770B2 publication Critical patent/JP6132770B2/ja
Expired - Fee Related legal-status Critical Current
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JP2013539854A 2010-11-18 2011-10-25 ポリシラザン接合層を含む発光ダイオードコンポーネント Expired - Fee Related JP6132770B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41511510P 2010-11-18 2010-11-18
US61/415,115 2010-11-18
PCT/US2011/057635 WO2012067766A2 (en) 2010-11-18 2011-10-25 Light emitting diode component comprising polysilazane bonding layer

Publications (3)

Publication Number Publication Date
JP2013543280A JP2013543280A (ja) 2013-11-28
JP2013543280A5 true JP2013543280A5 (https=) 2014-12-18
JP6132770B2 JP6132770B2 (ja) 2017-05-24

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JP2013539854A Expired - Fee Related JP6132770B2 (ja) 2010-11-18 2011-10-25 ポリシラザン接合層を含む発光ダイオードコンポーネント

Country Status (7)

Country Link
US (1) US9041034B2 (https=)
EP (1) EP2641277A4 (https=)
JP (1) JP6132770B2 (https=)
KR (1) KR20130128420A (https=)
CN (1) CN103222076B (https=)
TW (1) TWI581456B (https=)
WO (1) WO2012067766A2 (https=)

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