KR20130128420A - 폴리실라잔 결합층을 포함하는 발광 다이오드 성분 - Google Patents

폴리실라잔 결합층을 포함하는 발광 다이오드 성분 Download PDF

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Publication number
KR20130128420A
KR20130128420A KR1020137015558A KR20137015558A KR20130128420A KR 20130128420 A KR20130128420 A KR 20130128420A KR 1020137015558 A KR1020137015558 A KR 1020137015558A KR 20137015558 A KR20137015558 A KR 20137015558A KR 20130128420 A KR20130128420 A KR 20130128420A
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KR
South Korea
Prior art keywords
led
component
wavelength converter
semiconductor
light emitting
Prior art date
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Abandoned
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KR1020137015558A
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English (en)
Korean (ko)
Inventor
구오핑 마오
스테펜 제이 즈나메로스키
유 양
테리 엘 스미스
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쓰리엠 이노베이티브 프로퍼티즈 컴파니
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Publication of KR20130128420A publication Critical patent/KR20130128420A/ko
Abandoned legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512Wavelength conversion materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/84Coatings, e.g. passivation layers or antireflective coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/011Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018Bonding of wafers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/034Manufacture or treatment of coatings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • H10H20/036Manufacture or treatment of packages
    • H10H20/0361Manufacture or treatment of packages of wavelength conversion means

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  • Led Device Packages (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Optical Filters (AREA)
KR1020137015558A 2010-11-18 2011-10-25 폴리실라잔 결합층을 포함하는 발광 다이오드 성분 Abandoned KR20130128420A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41511510P 2010-11-18 2010-11-18
US61/415,115 2010-11-18
PCT/US2011/057635 WO2012067766A2 (en) 2010-11-18 2011-10-25 Light emitting diode component comprising polysilazane bonding layer

Publications (1)

Publication Number Publication Date
KR20130128420A true KR20130128420A (ko) 2013-11-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020137015558A Abandoned KR20130128420A (ko) 2010-11-18 2011-10-25 폴리실라잔 결합층을 포함하는 발광 다이오드 성분

Country Status (7)

Country Link
US (1) US9041034B2 (https=)
EP (1) EP2641277A4 (https=)
JP (1) JP6132770B2 (https=)
KR (1) KR20130128420A (https=)
CN (1) CN103222076B (https=)
TW (1) TWI581456B (https=)
WO (1) WO2012067766A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017078474A1 (ko) * 2015-11-06 2017-05-11 엘지이노텍 주식회사 발광패키지 및 이를 포함하는 차량용 조명장치
KR20220139388A (ko) * 2020-02-14 2022-10-14 에이엠에스-오스람 인터내셔널 게엠베하 파장 변환기, 이의 제조 방법 및 이 엘리먼트를 포함하는 발광 디바이스

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102010034923A1 (de) * 2010-08-20 2012-02-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Schichtverbunds aus einer Lumineszenzkonversionsschicht und einer Streuschicht
DE102011100728A1 (de) * 2011-05-06 2012-11-08 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement
WO2012160604A1 (ja) * 2011-05-25 2012-11-29 Dowaエレクトロニクス株式会社 発光素子チップ及びその製造方法
KR102093258B1 (ko) 2012-08-06 2020-03-26 루미리즈 홀딩 비.브이. 고체 조명용의 고도로 안정된 qd들의 복합물들 및 개시제 없는 중합을 통한 그 제조 방법
DE102012108939A1 (de) * 2012-09-21 2014-03-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement umfassend ein transparentes Auskoppelelement
DE102012217776A1 (de) * 2012-09-28 2014-06-12 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Bauelements
EP3118904B1 (en) * 2013-07-18 2023-07-05 Lumileds LLC Dicing a wafer of light emitting semiconductor devices
SG10201800517XA (en) * 2013-07-19 2018-02-27 Az Electronic Mat Luxembourg Sarl Encapsulation material for light emitting diodes
KR101841609B1 (ko) 2013-07-29 2018-03-23 에피스타 코포레이션 반도체 장치
TWI766580B (zh) * 2013-07-29 2022-06-01 晶元光電股份有限公司 一種半導體裝置
TWI722242B (zh) * 2013-07-29 2021-03-21 晶元光電股份有限公司 一種半導體裝置
US9935246B2 (en) 2013-12-30 2018-04-03 Cree, Inc. Silazane-containing materials for light emitting diodes
US9252121B2 (en) 2014-01-23 2016-02-02 International Business Machines Corporation Thermal interface material on package
EP3110881B1 (en) * 2014-02-28 2018-06-06 AZ Electronic Materials (Luxembourg) S.à.r.l. Hybrid material for optoelectronic applications
EP2913355A1 (en) * 2014-02-28 2015-09-02 AZ Electronic Materials (Germany) GmbH Hybrid material for optoelectronic applications
KR102311677B1 (ko) 2014-08-13 2021-10-12 삼성전자주식회사 반도체소자 및 그 제조방법
EP3183091B8 (en) * 2014-08-19 2018-09-05 Lumileds Holding B.V. Sapphire collector for reducing mechanical damage during die level laser lift-off
KR102572643B1 (ko) * 2015-05-13 2023-08-31 루미리즈 홀딩 비.브이. 다이 레벨의 레이저 리프트-오프 중에 기계적 손상을 줄이기 위한 사파이어 수집기
WO2017057454A1 (ja) * 2015-09-30 2017-04-06 東レ株式会社 発光装置の製造方法および表示装置の製造方法
KR102191894B1 (ko) 2016-07-18 2020-12-17 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. Led 밀봉 물질용 제형
CN109476873B (zh) 2016-07-18 2021-08-24 Az电子材料(卢森堡)有限公司 用于led封装材料的制剂
JP6911541B2 (ja) * 2017-05-31 2021-07-28 セイコーエプソン株式会社 発光装置およびプロジェクター
DE102017124559B4 (de) * 2017-10-20 2024-05-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Epitaxie-Wellenlängenkonversionselement, Licht emittierendes Halbleiterbauelement sowie Verfahren zur Herstellung des Epitaxie-Wellenlängenkonversionselements und des Licht emittierenden Halbleiterbauelements
WO2019226788A1 (en) 2018-05-24 2019-11-28 Lumiode, Inc. Led display structures and fabrication of same
WO2020083717A1 (en) * 2018-10-22 2020-04-30 Lumileds Holding B.V. A method of manufacturing a light converting device
WO2020131894A1 (en) 2018-12-21 2020-06-25 Lumiode, Inc. Addressing for emissive displays

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3519516A (en) 1967-02-17 1970-07-07 Dmitry Yakovlevich Zhinkin Method for bonding siloxane rubberbase vulcanizates using a polysilazane adhesive
US4642126A (en) 1985-02-11 1987-02-10 Norton Company Coated abrasives with rapidly curable adhesives and controllable curvature
US4652274A (en) 1985-08-07 1987-03-24 Minnesota Mining And Manufacturing Company Coated abrasive product having radiation curable binder
CA1323949C (en) 1987-04-02 1993-11-02 Michael C. Palazzotto Ternary photoinitiator system for addition polymerization
US4929704A (en) * 1988-12-20 1990-05-29 Hercules Incorporated Isocyanate- and isothiocyanate-modified polysilazane ceramic precursors
US5208192A (en) * 1990-01-12 1993-05-04 Ethyl Corporation Preceramic polysilazane compositions
US5457151A (en) 1991-09-24 1995-10-10 Southwest Research Institute Polysilazane adhesive composition
US5616650A (en) 1993-11-05 1997-04-01 Lanxide Technology Company, Lp Metal-nitrogen polymer compositions comprising organic electrophiles
JP3482423B2 (ja) * 1994-12-20 2003-12-22 クラリアント ジャパン 株式会社 光ファイバの製造方法
JPH08236274A (ja) * 1994-12-28 1996-09-13 Tonen Corp エレクトロルミネッセンス素子
US5801073A (en) * 1995-05-25 1998-09-01 Charles Stark Draper Laboratory Net-shape ceramic processing for electronic devices and packages
JP3771298B2 (ja) * 1995-05-30 2006-04-26 クラリアント インターナショナル リミティド ポリシラザン組成物
DE69606942T2 (de) * 1995-09-25 2000-10-05 Dow Corning Corp., Midland Verwendung von präkeramischen Polymeren als Klebstoffe für Elektronik
US6268432B1 (en) * 1998-10-01 2001-07-31 Dow Corning Toray Silicone Co. Ltd. Filler/adhesive agent for display units containing a curable silicone composition
JP3503131B2 (ja) * 1999-06-03 2004-03-02 サンケン電気株式会社 半導体発光装置
HK1048709A1 (zh) 1999-12-03 2003-04-11 Cree, Inc. 透过使用内置及外置光元件提高发光二极管(led)中的抽光效果
US6709806B2 (en) * 2000-03-31 2004-03-23 Kabushiki Kaisha Toshiba Method of forming composite member
TW515223B (en) * 2000-07-24 2002-12-21 Tdk Corp Light emitting device
JP2002267906A (ja) * 2001-03-09 2002-09-18 Hitachi Koki Co Ltd 光学部品の接合構造
JP2003118030A (ja) * 2001-10-16 2003-04-23 Asahi Glass Co Ltd ガスバリヤ性有機基材およびそれを用いたエレクトロルミネッセンス素子
JP2005056587A (ja) * 2003-08-01 2005-03-03 Toyota Industries Corp El装置及びその製造方法
JP4788109B2 (ja) * 2003-10-28 2011-10-05 パナソニック電工株式会社 半導体発光装置及びその製造方法
TW200538522A (en) * 2004-02-16 2005-12-01 Hitachi Chemical Co Ltd Adhesive composition, film-formed adhesive and circuit-joining material by using the same, and joining structure of circuit member and method for producing the same
JP2005294820A (ja) 2004-03-12 2005-10-20 Showa Denko Kk Iii族窒化物半導体発光素子及びその形成方法、それを用いたランプ、光源
WO2005088738A1 (en) 2004-03-12 2005-09-22 Showa Denko K.K. Group iii nitride semiconductor light-emitting device, forming method thereof, lamp and light source using same
KR20070028407A (ko) * 2004-06-11 2007-03-12 니폰 제온 가부시키가이샤 반사방지 적층체 및 광학 부재
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US7402831B2 (en) 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7297374B1 (en) 2004-12-29 2007-11-20 3M Innovative Properties Company Single- and multi-photon polymerizable pre-ceramic polymeric compositions
US7879258B2 (en) 2005-03-14 2011-02-01 Koninklijke Philips Electronics N.V. Phosphor in polycrystalline ceramic structure and a light-emitting element comprising same
JP2007042686A (ja) 2005-07-29 2007-02-15 Toshiba Lighting & Technology Corp 発光ダイオード装置
JP5032043B2 (ja) * 2006-03-27 2012-09-26 豊田合成株式会社 フェラスメタルアルカリ土類金属ケイ酸塩混合結晶蛍光体およびこれを用いた発光装置
EP2033234A4 (en) 2006-06-12 2013-11-06 3M Innovative Properties Co LED ARRANGEMENT WITH RE-ESTIMATING SEMICONDUCTOR CONSTRUCTION AND CONVERGING OPTICAL ELEMENT
WO2008083188A2 (en) 2006-12-29 2008-07-10 3M Innovative Properties Company Led light source with converging extractor in an optical element
JP4927019B2 (ja) 2007-04-10 2012-05-09 信越化学工業株式会社 蛍光体含有接着性シリコーン組成物、該組成物からなる組成物シート、及び該シートを使用する発光装置の製造方法
EP2206164A2 (en) * 2007-10-08 2010-07-14 3M Innovative Properties Company Light emitting diode with bonded semiconductor wavelength converter
US20120181919A1 (en) 2008-08-27 2012-07-19 Osram Sylvania Inc. Luminescent Ceramic Composite Converter and Method of Making the Same
US20100167002A1 (en) * 2008-12-30 2010-07-01 Vitex Systems, Inc. Method for encapsulating environmentally sensitive devices
CN102341459B (zh) * 2009-03-12 2014-01-01 道康宁公司 热界面材料和它们的制备与使用方法
WO2010110204A1 (ja) * 2009-03-27 2010-09-30 コニカミノルタオプト株式会社 蛍光体部材、蛍光体部材の製造方法、及び照明装置
EP2427922A1 (en) * 2009-05-05 2012-03-14 3M Innovative Properties Company Re-emitting semiconductor construction with enhanced extraction efficiency
KR20120015337A (ko) * 2009-05-05 2012-02-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Led에서 사용하기 위한 재방출 반도체 캐리어 디바이스 및 제조 방법

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017078474A1 (ko) * 2015-11-06 2017-05-11 엘지이노텍 주식회사 발광패키지 및 이를 포함하는 차량용 조명장치
US10527231B2 (en) 2015-11-06 2020-01-07 Lg Innotek Co., Ltd. Light emitting package and vehicle lighting device comprising same
KR20220139388A (ko) * 2020-02-14 2022-10-14 에이엠에스-오스람 인터내셔널 게엠베하 파장 변환기, 이의 제조 방법 및 이 엘리먼트를 포함하는 발광 디바이스

Also Published As

Publication number Publication date
JP6132770B2 (ja) 2017-05-24
WO2012067766A2 (en) 2012-05-24
CN103222076B (zh) 2017-10-27
TWI581456B (zh) 2017-05-01
WO2012067766A3 (en) 2012-07-12
US20130221393A1 (en) 2013-08-29
TW201232811A (en) 2012-08-01
EP2641277A4 (en) 2016-06-15
US9041034B2 (en) 2015-05-26
EP2641277A2 (en) 2013-09-25
CN103222076A (zh) 2013-07-24
JP2013543280A (ja) 2013-11-28

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