CN103222076B - 包含聚硅氮烷接合层的发光二极管部件 - Google Patents

包含聚硅氮烷接合层的发光二极管部件 Download PDF

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Publication number
CN103222076B
CN103222076B CN201180055356.XA CN201180055356A CN103222076B CN 103222076 B CN103222076 B CN 103222076B CN 201180055356 A CN201180055356 A CN 201180055356A CN 103222076 B CN103222076 B CN 103222076B
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CN
China
Prior art keywords
led
bonding layer
polysilazane
wavelength
emitting diode
Prior art date
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Expired - Fee Related
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CN201180055356.XA
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English (en)
Chinese (zh)
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CN103222076A (zh
Inventor
毛国平
S·J·兹纳默洛斯基
杨宇
T·L·史密斯
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3M Innovative Properties Co
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3M Innovative Properties Co
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means

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  • Led Device Packages (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Optical Filters (AREA)
CN201180055356.XA 2010-11-18 2011-10-25 包含聚硅氮烷接合层的发光二极管部件 Expired - Fee Related CN103222076B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US41511510P 2010-11-18 2010-11-18
US61/415,115 2010-11-18
PCT/US2011/057635 WO2012067766A2 (en) 2010-11-18 2011-10-25 Light emitting diode component comprising polysilazane bonding layer

Publications (2)

Publication Number Publication Date
CN103222076A CN103222076A (zh) 2013-07-24
CN103222076B true CN103222076B (zh) 2017-10-27

Family

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CN201180055356.XA Expired - Fee Related CN103222076B (zh) 2010-11-18 2011-10-25 包含聚硅氮烷接合层的发光二极管部件

Country Status (7)

Country Link
US (1) US9041034B2 (https=)
EP (1) EP2641277A4 (https=)
JP (1) JP6132770B2 (https=)
KR (1) KR20130128420A (https=)
CN (1) CN103222076B (https=)
TW (1) TWI581456B (https=)
WO (1) WO2012067766A2 (https=)

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DE102012108939A1 (de) * 2012-09-21 2014-03-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement umfassend ein transparentes Auskoppelelement
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TWI766580B (zh) * 2013-07-29 2022-06-01 晶元光電股份有限公司 一種半導體裝置
TWI722242B (zh) * 2013-07-29 2021-03-21 晶元光電股份有限公司 一種半導體裝置
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EP3183091B8 (en) * 2014-08-19 2018-09-05 Lumileds Holding B.V. Sapphire collector for reducing mechanical damage during die level laser lift-off
KR102572643B1 (ko) * 2015-05-13 2023-08-31 루미리즈 홀딩 비.브이. 다이 레벨의 레이저 리프트-오프 중에 기계적 손상을 줄이기 위한 사파이어 수집기
WO2017057454A1 (ja) * 2015-09-30 2017-04-06 東レ株式会社 発光装置の製造方法および表示装置の製造方法
KR102499548B1 (ko) * 2015-11-06 2023-03-03 엘지이노텍 주식회사 발광패키지 및 이를 포함하는 차량용 헤드램프
KR102191894B1 (ko) 2016-07-18 2020-12-17 에이제트 일렉트로닉 머티어리얼스 (룩셈부르크) 에스.에이.알.엘. Led 밀봉 물질용 제형
CN109476873B (zh) 2016-07-18 2021-08-24 Az电子材料（卢森堡）有限公司 用于led封装材料的制剂
JP6911541B2 (ja) * 2017-05-31 2021-07-28 セイコーエプソン株式会社 発光装置およびプロジェクター
DE102017124559B4 (de) * 2017-10-20 2024-05-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Epitaxie-Wellenlängenkonversionselement, Licht emittierendes Halbleiterbauelement sowie Verfahren zur Herstellung des Epitaxie-Wellenlängenkonversionselements und des Licht emittierenden Halbleiterbauelements
WO2019226788A1 (en) 2018-05-24 2019-11-28 Lumiode, Inc. Led display structures and fabrication of same
WO2020083717A1 (en) * 2018-10-22 2020-04-30 Lumileds Holding B.V. A method of manufacturing a light converting device
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US11584882B2 (en) * 2020-02-14 2023-02-21 Osram Opto Semiconductors Gmbh Wavelength converter; method of its making and light-emitting device incorporating the element

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Also Published As

Publication number Publication date
JP6132770B2 (ja) 2017-05-24
WO2012067766A2 (en) 2012-05-24
TWI581456B (zh) 2017-05-01
WO2012067766A3 (en) 2012-07-12
US20130221393A1 (en) 2013-08-29
TW201232811A (en) 2012-08-01
KR20130128420A (ko) 2013-11-26
EP2641277A4 (en) 2016-06-15
US9041034B2 (en) 2015-05-26
EP2641277A2 (en) 2013-09-25
CN103222076A (zh) 2013-07-24
JP2013543280A (ja) 2013-11-28

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