JP2010541295A5 - - Google Patents

Download PDF

Info

Publication number
JP2010541295A5
JP2010541295A5 JP2010528921A JP2010528921A JP2010541295A5 JP 2010541295 A5 JP2010541295 A5 JP 2010541295A5 JP 2010528921 A JP2010528921 A JP 2010528921A JP 2010528921 A JP2010528921 A JP 2010528921A JP 2010541295 A5 JP2010541295 A5 JP 2010541295A5
Authority
JP
Japan
Prior art keywords
led
semiconductor
wavelength converter
emitting diode
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2010528921A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010541295A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2008/075710 external-priority patent/WO2009048704A2/en
Publication of JP2010541295A publication Critical patent/JP2010541295A/ja
Publication of JP2010541295A5 publication Critical patent/JP2010541295A5/ja
Pending legal-status Critical Current

Links

JP2010528921A 2007-10-08 2008-09-09 半導体波長コンバータが接合された発光ダイオード Pending JP2010541295A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US97830407P 2007-10-08 2007-10-08
PCT/US2008/075710 WO2009048704A2 (en) 2007-10-08 2008-09-09 Light emitting diode with bonded semiconductor wavelength converter

Publications (2)

Publication Number Publication Date
JP2010541295A JP2010541295A (ja) 2010-12-24
JP2010541295A5 true JP2010541295A5 (https=) 2011-10-20

Family

ID=40549799

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010528921A Pending JP2010541295A (ja) 2007-10-08 2008-09-09 半導体波長コンバータが接合された発光ダイオード

Country Status (7)

Country Link
US (1) US20100283074A1 (https=)
EP (1) EP2206164A2 (https=)
JP (1) JP2010541295A (https=)
KR (1) KR20100077191A (https=)
CN (1) CN101821866B (https=)
TW (1) TW200924249A (https=)
WO (1) WO2009048704A2 (https=)

Families Citing this family (55)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101681057B (zh) 2007-05-20 2012-07-04 3M创新有限公司 光循环型薄壁中空腔体背光源
US8469575B2 (en) 2007-05-20 2013-06-25 3M Innovative Properties Company Backlight and display system using same
EP2160644B1 (en) 2007-05-20 2019-05-01 3M Innovative Properties Company Semi-specular components in hollow cavity light recycling backlights
US20100295075A1 (en) * 2007-12-10 2010-11-25 3M Innovative Properties Company Down-converted light emitting diode with simplified light extraction
US8338838B2 (en) * 2007-12-28 2012-12-25 3M Innovative Properties Company Down-converted light source with uniform wavelength emission
US8637883B2 (en) * 2008-03-19 2014-01-28 Cree, Inc. Low index spacer layer in LED devices
EP2313936A4 (en) * 2008-07-16 2017-06-28 3M Innovative Properties Company Stable light source
WO2010027580A2 (en) * 2008-09-04 2010-03-11 3M Innovative Properties Company Light source having light blocking components
EP2332223A1 (en) * 2008-09-04 2011-06-15 3M Innovative Properties Company I i-vi mqw vcsel on a heat sink optically pumped by a gan ld
JP2012502472A (ja) 2008-09-04 2012-01-26 スリーエム イノベイティブ プロパティズ カンパニー 単色光源
EP2380217A2 (en) 2008-12-24 2011-10-26 3M Innovative Properties Company Method of making double-sided wavelength converter and light generating device using same
JP2012514329A (ja) 2008-12-24 2012-06-21 スリーエム イノベイティブ プロパティズ カンパニー 両方の側に波長変換器を有する光生成デバイス
DE102009020127B4 (de) * 2009-03-25 2025-12-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Leuchtdiode
KR20120015337A (ko) 2009-05-05 2012-02-21 쓰리엠 이노베이티브 프로퍼티즈 컴파니 Ｌｅｄ에서 사용하기 위한 재방출 반도체 캐리어 디바이스 및 제조 방법
KR20120016261A (ko) 2009-05-05 2012-02-23 쓰리엠 이노베이티브 프로퍼티즈 컴파니 인듐 공핍 메커니즘을 이용하여 인듐-함유 기판 상에 성장된 반도체 디바이스
EP2427922A1 (en) 2009-05-05 2012-03-14 3M Innovative Properties Company Re-emitting semiconductor construction with enhanced extraction efficiency
DE102009023351A1 (de) * 2009-05-29 2010-12-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
JP2012532454A (ja) * 2009-06-30 2012-12-13 スリーエム イノベイティブ プロパティズ カンパニー カドミウム非含有の再発光半導体構成体
CN102473816B (zh) * 2009-06-30 2015-03-11 3M创新有限公司 基于电流拥挤调节颜色的电致发光装置
EP2449856A1 (en) 2009-06-30 2012-05-09 3M Innovative Properties Company White light electroluminescent devices with adjustable color temperature
DE102009027977A1 (de) 2009-07-23 2011-01-27 Osram Opto Semiconductors Gmbh Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode
DE102009048401A1 (de) * 2009-10-06 2011-04-07 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
DE102009058006B4 (de) * 2009-12-11 2022-03-31 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronisches Halbleiterbauteil
DE102010006072A1 (de) * 2010-01-28 2011-08-18 OSRAM Opto Semiconductors GmbH, 93055 Optoelektronisches Halbleiterbauteil und Verwendung eines optoelektronischen Halbleiterbauteils in einem Kfz-Schweinwerfer
JP5454303B2 (ja) * 2010-03-30 2014-03-26 ソニー株式会社 半導体発光素子アレイ
TW201208143A (en) * 2010-08-06 2012-02-16 Semileds Optoelectronics Co White LED device and manufacturing method thereof
KR20130128420A (ko) * 2010-11-18 2013-11-26 쓰리엠 이노베이티브 프로퍼티즈 컴파니 폴리실라잔 결합층을 포함하는 발광 다이오드 성분
WO2012164456A1 (en) * 2011-06-01 2012-12-06 Koninklijke Philips Electronics N.V. Method of attaching a light emitting device to a support substrate
DE102011122778B3 (de) * 2011-11-24 2013-03-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Herstellung einer Lumineszenzkonversions-Leuchtdiode
KR101894025B1 (ko) * 2011-12-16 2018-09-03 엘지이노텍 주식회사 발광소자
US9054235B2 (en) 2013-01-22 2015-06-09 Micron Technology, Inc. Solid-state transducer devices with optically-transmissive carrier substrates and related systems, methods, and devices
JP6396419B2 (ja) 2013-03-29 2018-09-26 フィリップス ライティング ホールディング ビー ヴィ 波長変換素子を有する発光装置
CN104103731A (zh) * 2013-04-03 2014-10-15 新世纪光电股份有限公司 发光二极管结构及其制作方法
US9054063B2 (en) * 2013-04-05 2015-06-09 Infineon Technologies Ag High power single-die semiconductor package
TWI722242B (zh) * 2013-07-29 2021-03-21 晶元光電股份有限公司 一種半導體裝置
TWI766580B (zh) * 2013-07-29 2022-06-01 晶元光電股份有限公司 一種半導體裝置
DE102015105693B4 (de) * 2015-04-14 2021-05-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes Halbleiterbauelement und Verfahren zur Erzeugung von Strahlung unter Verwendung eines strahlungsemittierenden Halbleiterbauelements
WO2017031138A1 (en) * 2015-08-17 2017-02-23 Infinite Arthroscopy Inc, Limited Light source
WO2017087448A1 (en) 2015-11-16 2017-05-26 Infinite Arthroscopy Inc, Limited Wireless medical imaging system
DE102016101442B4 (de) * 2016-01-27 2025-03-13 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Konversionselement und strahlungsemittierendes Halbleiterbauelement mit einem solchen Konversionselement
DE102016104280A1 (de) * 2016-03-09 2017-09-14 Osram Opto Semiconductors Gmbh Bauelement und Verfahren zur Herstellung eines Bauelements
CN106410006B (zh) * 2016-06-22 2018-08-17 厦门乾照光电股份有限公司 一种集成可见光指示装置的紫外发光二极管及其生产方法
EP4250721A3 (en) 2017-02-15 2024-02-07 Lazurite Holdings LLC Wireless medical imaging system comprising a head unit and a light cable that comprises an integrated light source
JP6911541B2 (ja) * 2017-05-31 2021-07-28 セイコーエプソン株式会社 発光装置およびプロジェクター
KR102384731B1 (ko) 2017-10-17 2022-04-08 삼성전자주식회사 Led 장치 및 그 제조 방법
CN112086548A (zh) * 2018-07-16 2020-12-15 厦门三安光电有限公司 微发光装置及其显示器
CN110875344A (zh) * 2018-08-31 2020-03-10 昆山工研院新型平板显示技术中心有限公司 一种led显示器件的制备方法及led显示器件
US11637219B2 (en) 2019-04-12 2023-04-25 Google Llc Monolithic integration of different light emitting structures on a same substrate
CN109841710B (zh) * 2019-04-12 2020-05-15 南京大学 用于透明显示的GaN Micro-LED阵列器件及其制备方法
JP7071648B2 (ja) * 2019-05-16 2022-05-19 日亜化学工業株式会社 発光装置及び発光装置の製造方法
DE102019115351A1 (de) * 2019-06-06 2020-12-10 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement mit Strahlungskonversionselement und Verfahren zum Herstellen von Strahlungskonversionselementen
JP7520106B2 (ja) 2019-08-20 2024-07-22 ソウル バイオシス カンパニー リミテッド ディスプレイ用発光素子およびそれを有するディスプレイ装置
USD938584S1 (en) 2020-03-30 2021-12-14 Lazurite Holdings Llc Hand piece
USD972176S1 (en) 2020-08-06 2022-12-06 Lazurite Holdings Llc Light source
GB2600429B (en) * 2020-10-28 2023-11-01 Plessey Semiconductors Ltd High colour purity LED

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5895932A (en) * 1997-01-24 1999-04-20 International Business Machines Corporation Hybrid organic-inorganic semiconductor light emitting diodes
US5898185A (en) * 1997-01-24 1999-04-27 International Business Machines Corporation Hybrid organic-inorganic semiconductor light emitting diodes
JPH10270799A (ja) * 1997-03-21 1998-10-09 Sanyo Electric Co Ltd 発光素子
HK1048709A1 (zh) * 1999-12-03 2003-04-11 Cree, Inc. 透过使用内置及外置光元件提高发光二极管(led)中的抽光效果
JP3407730B2 (ja) * 2000-11-02 2003-05-19 サンケン電気株式会社 半導体発光装置の製法
US6841802B2 (en) * 2002-06-26 2005-01-11 Oriol, Inc. Thin film light emitting diode
KR100576856B1 (ko) * 2003-12-23 2006-05-10 삼성전기주식회사 질화물 반도체 발광소자 및 제조방법
JP4622253B2 (ja) * 2004-01-22 2011-02-02 日亜化学工業株式会社 発光デバイス及びその製造方法
JP2005259891A (ja) * 2004-03-10 2005-09-22 Toyoda Gosei Co Ltd 発光装置
US7361938B2 (en) * 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
JP4632697B2 (ja) * 2004-06-18 2011-02-16 スタンレー電気株式会社 半導体発光素子及びその製造方法
US7534633B2 (en) * 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
JP2006041077A (ja) * 2004-07-26 2006-02-09 Sumitomo Chemical Co Ltd 蛍光体
US7462502B2 (en) * 2004-11-12 2008-12-09 Philips Lumileds Lighting Company, Llc Color control by alteration of wavelength converting element
US7402831B2 (en) * 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
JP4971672B2 (ja) * 2005-09-09 2012-07-11 パナソニック株式会社 発光装置
JP2007109792A (ja) * 2005-10-12 2007-04-26 Sony Corp 半導体発光素子および波長変換基板
TW200729540A (en) * 2006-01-27 2007-08-01 San-Bao Lin Improvement of brightness for light-emitting device
CN101395728B (zh) * 2006-03-10 2011-04-13 松下电工株式会社 发光元件及其制造方法
US20090008729A1 (en) * 2007-07-03 2009-01-08 Advanced Chip Engineering Technology Inc. Image sensor package utilizing a removable protection film and method of making the same
US7538359B2 (en) * 2007-08-16 2009-05-26 Philips Lumiled Lighting Company, Llc Backlight including side-emitting semiconductor light emitting devices

Similar Documents

Publication Publication Date Title
JP2010541295A5 (https=)
WO2009048704A3 (en) Light emitting diode with bonded semiconductor wavelength converter
JP2011507272A5 (https=)
JP2008263126A5 (https=)
TW200739969A (en) Light emitting diode package
WO2010146390A3 (en) Light emitting diodes
JP2013543280A5 (https=)
JP2014515560A5 (https=)
EP2339656A3 (en) Light emitting device
EP2360749A3 (en) Light emitting diode, LED package and lighting system incorporating the same
JP2011129920A5 (https=)
JP2010186814A5 (https=)
EP2093814A3 (en) Light-emitting diode, electronic apparatus, and light-emitting diode manufacturing method
CA2734292A1 (en) Light-emitting device
EP1858090A3 (en) Light emitting diode having multi-pattern structure
WO2009111790A8 (en) Optical devices featuring nonpolar textured semiconductor layers
RU2012147484A (ru) Светоизлучающий прибор и способ его изготовления
TW200733436A (en) Light emitting diode package structure and fabrication method thereof
JP2009540618A5 (https=)
JP2010541217A5 (https=)
WO2012165903A3 (ko) 반도체 발광 소자，그 제조 방법，이를 포함하는 반도체 발광 소자 패키지 및 레이저 가공 장치
EP1990841A3 (en) Superlattice strain relief layer for semiconductor devices
JP2018531517A5 (https=)
EP2466658A3 (en) LED including a phosphor layer, LED package and methods of manufacturing the same
WO2010150994A3 (ko) 파장변환물질층을 구비하는 발광 다이오드 및 이의 제조방법