TW200924249A - Light emitting diode with bonded semiconductor wavelength converter - Google Patents

Light emitting diode with bonded semiconductor wavelength converter Download PDF

Info

Publication number
TW200924249A
TW200924249A TW097137549A TW97137549A TW200924249A TW 200924249 A TW200924249 A TW 200924249A TW 097137549 A TW097137549 A TW 097137549A TW 97137549 A TW97137549 A TW 97137549A TW 200924249 A TW200924249 A TW 200924249A
Authority
TW
Taiwan
Prior art keywords
led
wavelength converter
textured surface
wafer
converter
Prior art date
Application number
TW097137549A
Other languages
English (en)
Chinese (zh)
Inventor
Tommie Wilson Kelley
Catherine Anne Leatherdale
Michael Albert Haase
Terry Lee Smith
Original Assignee
3M Innovative Properties Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 3M Innovative Properties Co filed Critical 3M Innovative Properties Co
Publication of TW200924249A publication Critical patent/TW200924249A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512—Wavelength conversion materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/882—Scattering means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations

Landscapes

  • Led Device Packages (AREA)
TW097137549A 2007-10-08 2008-09-30 Light emitting diode with bonded semiconductor wavelength converter TW200924249A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US97830407P 2007-10-08 2007-10-08

Publications (1)

Publication Number Publication Date
TW200924249A true TW200924249A (en) 2009-06-01

Family

ID=40549799

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097137549A TW200924249A (en) 2007-10-08 2008-09-30 Light emitting diode with bonded semiconductor wavelength converter

Country Status (7)

Country Link
US (1) US20100283074A1 (https=)
EP (1) EP2206164A2 (https=)
JP (1) JP2010541295A (https=)
KR (1) KR20100077191A (https=)
CN (1) CN101821866B (https=)
TW (1) TW200924249A (https=)
WO (1) WO2009048704A2 (https=)

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Also Published As

Publication number Publication date
WO2009048704A2 (en) 2009-04-16
EP2206164A2 (en) 2010-07-14
JP2010541295A (ja) 2010-12-24
KR20100077191A (ko) 2010-07-07
WO2009048704A3 (en) 2009-05-28
CN101821866B (zh) 2012-05-23
CN101821866A (zh) 2010-09-01
US20100283074A1 (en) 2010-11-11

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