TW200536159A - Group III nitride semiconductor light-emitting device and producing method thereof - Google Patents

Abstract

A Group III nitride semiconductor light-emitting device includes at least a stacked structure 11 including two Group III nitride semiconductor layers 104 and 106 having different electric conductive types and a light-emitting layer 105 which is stackedbetween the two Group III nitride semiconductor layers and which comprises a Group III nitride semiconductor; a crystal substrate 100 used for providing the stacked structure thereon and removed from the stacked structure; and a plate body 111 made of material transparent with respect to light emitted from the light-emitting layer and formed on a surface of the stacked structure exposed after removal of the crystal substrate. With this structure, light emitted from the light-emitting layer can be taken out from the plate body.

Description

200536159 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a m-group nitride semiconductor light-emitting device having a stacked structure and a method for manufacturing the same, wherein the stacked structure includes two] π group nitrides having different conductivity types. A semiconductor layer and a light emitting layer stacked between the two m-group nitride semiconductor layers and containing an in-group nitride semiconductor. [Prior art] Group m nitride semiconductor light-emitting devices, such as light emitting diodes (LEDs) and laser diodes (LDs), which emit short-wave blue or green light, use indium gallium nitride (GaYInzN: OS Y, ZS; l, Υ + Z = 1) as the light emitting layer (such as JP-B SHO 5 5 -3 8 3 4). The light emitting portion includes a light emitting layer and two cladding layers, and the cladding layer is formed of a group III nitride semiconductor having different conductivity and deposited on two sides of the light emitting layer. The cladding layer for forming the light emitting portion of the double hetero (DΗ) structure is made of, for example, aluminum gallium nitride (AlxGaYN: 0 S X, Y S 1, X + Y = 1). In a stacked structure of a group III nitride semiconductor light emitting device for forming a pn junction type DH structure (which has a light emitting portion of a DH structure with a light emitting layer located between an n-type cladding layer and a p-type cladding layer), the substrate is mainly It is formed of sapphire (α-Α1203 single crystal) or silicon carbide (SiC) single crystal. This is because the material has a light-transmitting property that allows light from the light-transmitting layer to pass through, and a heat resistance that can withstand high-temperature crystal growth of the m-type nitride semiconductor layer. In the case of the conventional m-type nitride semiconductor light-emitting device, the substrate system formed to form the light-emitting device stack structure is such that it is a plate body for mechanically supporting the stacked structure even after the device forming step. 200536159 * ι. Although it is necessary to keep the sapphire crystal or silicon carbide crystal substrate intact, the m-group nitride semiconductors are suitable for maintaining the structure and supporting force of the stacked structure, but it has a short-wavelength ultraviolet ray light absorption sensor. The disadvantage that the luminous efficiency is reduced. The present invention has been completed in view of the previous disclosure, and the object of the present invention is to provide a melon nitride semiconductor light-emitting device 'which has the function of mechanically supporting an object similar to a substrate, can reduce the absorption of short-wavelength ultraviolet light rays, and can improve light-emitting efficiency . The object of the present invention is also to provide a method for manufacturing a group m nitride semiconductor light-emitting device and to provide a LED lamp. [Disclosure of the Invention] In order to achieve the purpose of the previous disclosure, the present invention provides an m-group nitride semiconductor light-emitting device, which includes: at least one stacked structure having two m-group nitride semiconductor layers of different conductivity types, and A light-emitting layer stacked between two in-group nitride semiconductor layers and containing an m-group nitride semiconductor; a crystalline substrate for setting a stack structure thereon and removed from the stack structure; and a plate body, which is made of a light-emitting layer The light-transmissive transparent material is formed on the surface of the stacked structure exposed after the crystalline substrate is removed. The light from the light-emitting layer is transmitted through the plate body. In the m-nitride semiconductor light-emitting device, the plate body is formed of glass. In the first or second front-exposed m-type nitride semiconductor light-emitting device, the crystalline substrate is removed by a laser beam irradiating an interface between the stacked structure and the crystalline substrate. 200536159, any one of the first to third pre-existing I [group nitride semiconductor light-emitting devices further includes an ohmic electrode provided on the surface of the stacked structure on the opposite side of the plate body. In the fourth front-exposed m-type nitride semiconductor light-emitting device, a metal reflective film is provided on the front surface of the ohmic electrode. In the fifth front-exposed m-type nitride semiconductor light-emitting device, a gold film is provided on the front surface of the metal reflection film. The present invention also provides a method for manufacturing a m-type nitride semiconductor light-emitting device. The method includes the steps of: providing a stacked structure on a crystalline substrate, the stacked structure having two cucurbit nitride semiconductor layers of different conductivity types, and A light emitting layer containing two m-group nitride semiconductor layers between the m-group nitride semiconductor layers; removing the crystalline substrate 'from the stacked structure to expose the surface of the stacked structure; forming a plate body on the exposed surface of the stacked structure, the plate body consisting of The light-emitting layer is formed of a transparent material that can transmit light; and the light from the light-emitting layer is transmitted out of the plate body. The present invention also provides an LED lamp provided with any one of the first to sixth front-exposed m-type nitride semiconductor semiconductor light-emitting devices. This lamp has a sub-carrier mainly composed of sand, and an m-group nitride semiconductor light-emitting device is mounted thereon in a flip-chip manner. According to the present invention, after the crystalline substrate for providing the stack® structure is removed, a plate body made of a material that can be penetrated by light emitted from the light emitting layer is formed on the exposed surface of the stacked structure. Therefore, the plate body can mechanically support the stacked structure, reduce the light absorption of short-wavelength ultraviolet rays and improve the luminous efficiency. Because the material with the same expansion coefficient as the stack structure can be selected as the sheet material: 200536159, the body ', even if a current flows for a long time, there will be no cracks caused by thermal stress in the stack structure, thereby improving the reliability of the device. The LED light can be obtained simply by mounting the light emitting device on the sub-vehicle, so that the LED light can be easily manufactured. [Embodiment] The best mode for carrying out the present invention The δ sheep fine δ will be explained in the embodiment of the present invention. The m-group nitride semiconductor light-emitting device of the present invention includes a stacked structure for emitting light on a crystalline substrate in the device, the stacked structure having: (a) a first EI-nitride semiconductor layer of a first conductivity type, (b ) A second group III nitride semiconductor layer of the second conductivity type, and (c) a light emitting layer formed of a melon nitride semiconductor and sandwiched between the first and second m nitride semiconductors. The first and second m-group nitride semiconductor layers have a function as a cladding layer or a contact layer. Examples of the material used to form the crystalline substrate on which the stacked structure is formed are single crystal oxides such as sapphire and lithium gallium oxide (Li Ga02), and crystals such as 3C

# Cubic cubic single crystal silicon carbide (3C-SiC), 4H or 6H crystalline hexagonal single crystal SiC (4H-SiC, 6H-SiC), silicon single crystal, gallium phosphide (GaP), gallium arsenide (GaAs) A m-group nitride semiconductor single crystal.

When the first m-type nitride semiconductor layer forming the stacked structure is provided on a crystalline substrate with poor lattice matching, a buffer layer for reducing lattice mismatch may be provided. When a GaN-based first group m nitride semiconductor layer is grown on a sapphire substrate, for example, the first group m nitride semiconductor layer is stacked on the surface of the substrate through a GaN buffer layer provided by a seeding process (SP) technology. (JP-A 200536159 " 2 0 0 3-2 4 3 3 0 2). Even if the low-temperature buffer layer is made of a 1N instead of G a N, it is also effective to reduce the lattice mismatch with the substrate. When the buffer layer is used, the thickness of the low-temperature buffer layer is preferably 1 ηm or more and 100 nm or more-or more and 50 nm or less is more preferable, and 2 nm or more and 5 nm is more preferable. The surface of the low-temperature buffer layer is preferably flat rather than uneven. For example, for evaluation, a surface roughness of 0.1 μm or less is appropriate, and 0.1 or less is more preferable. By growing at a low temperature such as 350-450 ° C, a single crystal layer is provided at the substrate interface to obtain a stamped layer with minute surface roughness. The surface roughness is measured using a measuring device such as an atomic force microscope (AFM). A low-temperature buffer layer with a micro-roughness plane is an upper layer that contributes to excellent surface flatness. For example, a base layer having both smooth and flat surfaces can be grown on a GaN low-temperature retardation surface with minute roughness. A base layer with a flat surface, such as a GaN layer provided on a buffer layer, to provide a m-type nitrogen® conductor layer of the first or second conductivity type with a flat surface. Provided that the first melon nitride semiconductor layer is an n-type layer , The group nitride semiconductor layer is a p-type layer of the opposite conductivity type. In the GaN layer, the thickness of the base layer of the first or second conductivity type compound semiconductor layer having a flat surface is 0.5 μm or more And 5 micrometers, preferably 1 micrometer or more and 3 micrometers or less. A flat nitride semiconductor layer of the first or second m group can be used as an n-type or p-type cladding layer for stacking from extremely flat and extremely thin well layers. The formed quantum well structure. This can be used for the formation of r and r electrodes with excellent adhesion.

: When it is finished, it is A1N F '2nm or below, and it can be obtained on the stack with Ra 0.05 micron at a low temperature of crystallization, and it can be obtained on the stack without any flush layer surface. Article ", and suitable, outside, its i-type or P 200536159... Type coating. An undoped layer with no intentionally added impurities can be used as the first or second cucurbit nitride semiconductor layer. It is also possible to use n-type or P-type m-group nitride semiconductor layers with intentional addition of impurities to control the conductivity, carrier concentration, and resistance 値. Doped with n-type or p-type impurities so that the atomic concentration in the thin layer becomes ixioUcnr3 or more and 5xl 019cnT3 or less. The first and second melon nitride semiconductor layers are suitable for forming a low forward voltage and Coating of high reliability light emitting device. Although it is necessary that the first and second m-nitride semiconductor layers as the cladding layer be made of a material having a larger energy gap than the material of the light-emitting layer, it is not necessary that the III-nitride semiconductor layer be made of the same material. For example, the n-type cladding layer may be formed of n-type GaYInzN (OSY, ZS1, Y + Z = 1), and the p-type cladding layer may be formed of ρ-type AlxGaYN (0SX, YS1, χ + γ = 1). If a first or second conductivity type cladding layer formed of a different group III nitride semiconductor layer is used, a symmetrical light emitting portion (depending on the band structure) can be formed. The first and second m-group nitride semiconductor layers having high-concentration impurities in a range of atomic concentrations previously exposed and having low resistivity are effective as contact layers. A low-resistivity m-type nitride semiconductor layer with a carrier concentration ® lx1018cn ^ 3 or more is particularly useful for forming a low-contact resistivity ohmic electrode. Examples of n-type impurities that can be used to obtain a low-resistivity n-type m group nitride semiconductor layer are group IV elements such as Si, Ge and group VI elements such as Se. Examples of p-type impurities are group Π elements such as M g, be e. It is preferable that the thickness of the contact layer is equal to or greater than the depth that allows the material constituting the ohmic electrode to be diffused into or into it. When the ohmic electrode is formed by an alloying heat treatment, the thickness is equal to or greater than the depth of the front surface of the alloy. A suitable thickness is 10 nm or more. -10- 200536159,-The light-emitting layer provided between the first and second m group nitride semiconductor layers is indium gallium nitride (GaYInzN: 〇SY, ZS1, Υ + Z = 1), gallium phosphide (GaNi.aPa : 〇 ^ a < 1) ^ AlxGaYInzN! _AMa (0 ^ X? Y, Z ^ l ^ X + Y + Z = 1, M represents a group V element other than nitrogen, 0 $ a < 1). The light emitting layer may be formed of a single quantum well layer (SQW) or a multiple quantum well (MQW) structure. When the well layer of the quantum well structure is GaYInzN, the indium composition ratio (= Z) is adjusted according to the desired emission wavelength, and is set to be larger when the light wavelength becomes larger. The thickness of the light emitting layer of a multiple quantum well structure with a GaYInzN well layer is preferably 100 nm or more and 500 nm or less. By forming a thin layer attached to the first or second III nitride semiconductor layer as a barrier layer or a well layer, a quantum well structure of a light emitting layer can be formed. The initial end layer (lowermost layer) of a quantum well structure can be a barrier layer or a well layer. Similarly, the terminal layer (topmost layer) of the quantum well structure may be a barrier layer or a well layer. Even if the composition of the initial end layer and the terminal layer are different, there is no problem. The quantum well structure including a well layer with excellent crystallinity due to undoping and a barrier layer doped with impurities can avoid the negative effect caused by the piezoelectric effect, and can form m with excellent intensity # and stable emission wavelength m Group nitride semiconductor light emitting device. The well layer or the barrier layer may be, for example, GaNhPj 〇Sa < 1) or AlxGaYlnzNhaMj 0SX, Y, ZS1, X + Y + Z = 1, where M represents a group V element other than nitrogen ′ 〇Sa < 1) and GaYInzN ( 0 € Y, ZS1, Y + Z = l). The m-group nitride semiconductor layer constituting the stacked structure can be grown by a vapor phase growth method such as metal organic chemical vapor deposition (MOCVD), vapor phase epitaxy (VPE), and molecular beam crystalline (MBE). In order to obtain a thin layer with a wide range of film thickness (from the thickness of the well layer of the quantum well structure light emitting layer of several nm to the micron thickness suitable for the first 200536159 • or the second melon nitride semiconductor layer), MOCVD or MBE method is suitable of. Among them, the MOVPE method is suitable for vapor deposition of a group Π nitride semiconductor layer containing highly volatile As and P (except nitrogen). Atmospheric pressure (basically atmospheric pressure) or reduced pressure MOCVD can be used. In the present invention, since the crystalline substrate used to form the stacked structure of the light-emitting device is removed, it is not necessary to use a light-transmitting crystal as the substrate. Since the original substrate (the crystalline substrate used to form the stacked structure) must be removed, the substrate is preferably made by an etching method such as wet etching or dry etching (including high-frequency plasma etching or laser irradiation) Made of easily removed crystals. When the thermal expansion coefficient of a crystalline substrate is significantly different from that of a structural layer of a stacked structure, it is helpful to use a laser irradiation method for stripping. In the present invention, after the original crystalline substrate is removed, the plate with mechanical strength is attached to the uppermost layer of the stacked structure to strengthen the mechanical support of the stacked structure. A glass plate body which is transparent to the light emitted from the light emitting layer can be used as the attached plate body. The pre-cleaning ® wash system on the surface of the stacked layer or the surface of the board body attached to the stacked layer helps the interface. For example, in order to tightly attach the plate body to a group m nitride semiconductor layer (stacked layer), it is pressurized under an external pressure of 1 kg / cm2 to 5 kg / cm2, or heated to 50 ° C-1 0 0 0 ° C high temperature. Alternatively, application of temperature, pressure, voltage, and anodic bonding may be used. In this case, by forming a thin layer of GaN, A 1N, G a A1N or the like between the plate body and the light emitting layer, which can strengthen the interface between them, it can be attached to it without negatively affecting its characteristics. It is also possible to form an adhesive layer such as silicone resin on the surface of the stacked structure -12- 200536159. After that, attach the plate body. To remove the substrates forming the stacked structure, a polishing or peeling method may be used. For example, a sapphire substrate may be polished using a polishing powder composed mainly of silicon oxide, aluminum oxide or diamond powder. The laser irradiation method is suitable for stripping a crystalline substrate forming a stacked structure. Pulsed laser beams, carbon dioxide gas laser beams, excimer laser beams, and the like can be used as laser beams suitable for stripping irradiation. Among them, excimer laser beams using argon fluoride (ArF), krypton fluoride (KrF) or the like as the excitation gas are preferred. # The laser beam wavelength is preferably 193 nm or 248 nm. When the crystal substrate to be removed using a laser beam is very thick, the laser beam cannot be effectively heated because the laser beam is easily absorbed. Therefore, in order to effectively strip the crystalline substrate from the stacked structure by irradiating the laser beam, the thickness of the crystalline substrate is preferably 100 to 300 μm. When the surface of the crystalline substrate is uneven or cracked, the laser beam absorption changes, and the crystalline substrate is not uniformly peeled off. As mentioned above, in the embodiment of the present invention, the crystalline substrate forming the stacked structure is removed to expose the surface of the stacked structure, and then a plate body made of a material that can penetrate light from the light-emitting layer is formed on the exposure. On the surface. Therefore, the board body can mechanically support the stacked structure on it to reduce the light absorption of short-wave ultraviolet light and improve the luminous efficiency. The material with the same thermal expansion coefficient as the stack structure was selected as the board body. Therefore, even if a current flows for a long time, there is no crack caused by thermal stress in the stacked structure. Therefore, reliability can be improved. Although the crystal substrate used to form the stacked structure is completely removed and the plate body is provided in the previous description, it is not necessary to completely remove the crystal substrate, and -13- 200536159. The stacked structure can be thinned instead of removed. If the crystalline substrate used to form the stacked structure is thinned, an m-group nitride semiconductor light-emitting device having the following properties can be obtained: the absorption of light passing through the crystalline substrate can be reduced, and the light from the light emitting layer can be transmitted to the outside Excellent efficiency and excellent static resistance voltage. Therefore, it is preferable to use a light-transmitting 11-type or p-type conductive single crystal as the substrate. The standing crystalline substrate has a function of mechanically supporting the stacked structure thereon and passing light from the light emitting layer therethrough. If the standing crystalline substrate is thinned, the light transmittance can be increased, and an m group nitride semiconductor light-emitting device with excellent light transmittance can be obtained. However, if the crystalline substrate is thinned, the function of the crystalline substrate for supporting the stacked structure thereon is reduced. Therefore, the thickness of the standing crystalline substrate is preferably 100 to 300 micrometers to maintain both functions. Example: The present invention will be described based on a state in which a glass substrate is attached to the uppermost layer of a stacked structure as a plate body to form a group m nitride semiconductor light emitting device. ® Figure 1 is a schematic cross-sectional view of a stacked structure formed on a sapphire substrate. Fig. 2 is a schematic cross-sectional view of the LED structure according to the present invention obtained by installing the stacked structure shown in Fig. 1. Figure 3 is a plan view of the LED. Fig. 4 is a sectional view of an LED lamp formed by mounting LEDs. First, as shown in FIG. 1, an aluminum nitride (A1N) layer 101 having a thickness of about 350 micrometers is formed on an electrically insulating sapphire substrate by a seed process (SP) method at 90 ° C by a general reduced pressure MOCVD method. 100 (000 1) crystal plane. The thickness of the A1N layer 101 is 5 nm. A GaN buffer layer with a thickness of 18 nm 102 -14- 200536159 is formed on the A1N layer 101 at 105 ° C. With 0.0 1 aluminum The n-type contact layer 103 of the n-type aluminum gallium nitride mixed crystal (Alo.cnGao.9 9N) with a composition ratio is formed on the GaN buffer layer 102 so that the silicon atom concentration in the layer becomes 1 × 1018cnT3. The contact layer 103 can be grown by a general reduced pressure MOCVD method at 1050 ° C. The thickness of the n-type contact layer 103 is set to about 2.5 microns. The n-type AlO.ioGac) .9 () The n-type cladding layer 104 is stacked on the n-type contact layer 103 of the n-type Alo.cnGao. ^ N. The n-type cladding layer 104 is formed by doping Φ so that the silicon atom concentration in the layer becomes 1 × 10 18 cm · 3. The thickness of the n-type cladding layer 104 formed by a general reduced pressure MOCVD method is set at about 0.5 m. An n-type light-emitting layer 105 containing an n-type AlxGaYN barrier layer and an n-type GaYInzN well layer is stacked on the n-type cladding layer 104 of the n-type AlG.1GGa (K9 () N. The indium composition ratio in the well layer is adjusted. So that the ultraviolet light with a wavelength of 3 60-3 7 Onm can be emitted by the quantum well structure. The formed quantum well structure has a well layer thickness of about 5 nm and a barrier layer thickness of about 15 nm.

A p-type AlxlGaY1N cladding layer 106 deliberately doped with a P-type magnesium impurity and having a thickness of 2.5 nm is formed on the quantum well structure light-emitting layer ι05. The ratio of the aluminum composition (= X 1) in the thin layer 106 was set to about 0.1 (10%). Magnesium is doped so that the atomic concentration in the thin layer 10 6 becomes 5 X 1 0 1 8 c m -3. A P-type AlX2GaY2N (X 1 > X2 g 0) contact layer 1 07 system doped with magnesium and having a small aluminum composition ratio is formed on the P-type cladding layer 106. The magnesium atom concentration in the contact layer 107 was set to about 2 × 1 019cnT3. A platinum thin film was formed on the surface of the p-type contact layer 107 by a high-frequency sputtering method as a P-type ohmic electrode film 108. A metal reflective film 1 10 is provided on the p-type ohmic electrode film to reflect light from the multi-quantum well structure light-emitting layer 105 to the crystal substrate 100. The metal reflective film 10 is formed of a rhodium (Rh) coating film. The n-type contact layer 103 is covered with a mask and etched by dry etching, and an n-type ohmic electrode 113 made of Cr-Ti-Au is formed on the etched surface of the thin layer 103 (Fig. 3). The outermost layer of the 17-type ohmic electrode 113 is gold (Au). The junction gold film 110 is formed on the metal reflection film 109, and the stacked structure 11 from the sapphire substrate 100 to the metal reflection film 10 09 is formed by the pre-step. Secondly, the honing machine supports the back surface of the sapphire substrate 100 on which the stacked structure 11 is mounted. Colloidal silica (containing fine silica particles with an average particle size of 0.5 microns) is used to polish the back surface of the sapphire substrate 100 from 130 to 150 microns. By polishing, the thickness of the sapphire substrate 100 can be reduced to 210 ± 10 microns. After honing the back surface of the sapphire substrate 100, a glass plate was attached to the facing metal reflective film 1 09 with a water-soluble adhesive to temporarily strengthen the mechanical support of the stacked structure 1 1. The excimer laser beam with a wavelength of 248nm is irradiated on the interface between the sapphire substrate 100 and the GaN buffer layer 102 from the surface of the thinned and polished sapphire substrate 100. In this way, the difference in thermal expansion coefficient between the sapphire substrate 100 and the stacked structure 11 can be used, and the polished and thinned sapphire substrate 100 can be stripped from the A1N layer 101 and the GaN buffer layer 102. Fluorescent glass plates of three colors, RGB, which can be emitted by ultraviolet light of about 370 nm, are bonded to the surface by anodic bonding to form the plate body 1 1 1. The anodic bonding method using a voltage of 3 40V and a temperature of about 300 ° C (very low temperature) is effective 200536159-bonding both. A spin coating method is used as a method of coating a fluorescent material to apply the material to the surface of a glass plate. Another method for coating particles (particles of 10 nm or smaller) on a glass plate is to use a sol-gel method. This prevents particles from condensing and produces surfaces with excellent properties. Secondly, the glass plate temporarily disposed on the surface of the metal reflective film 1 09 of the stacked structure 11 is removed, and the electrode surface is cleaned to complete the LED wafer. Next, a general laser dicing method is used to form a dicing trench or dicing device around the semiconductor. Using a general press to apply mechanical pressure to the grooves, the device was divided into a gua-nitride semiconductor light-emitting device (wafer) 12 (hereinafter referred to as "LED 12" "). This completes the EI-nitride semiconductor white LED 12 of the pn junction type DH structure (Figures 2 and 3); the pn junction type DH structure has removed the sapphire substrate 100 and the stacked structure 1 1 mechanical It is supported on a fluorescent glass plate attached to the plate body U 1 of the stacked structure 11. Because the entire surface of the LED 12 is formed with a device using the attached plate body U 1, a high-brightness white LED device with excellent color performance can be formed. Next, the LED lamp 10 is formed using the LED 12. The p-type ohmic electrode 108 (metal reflective film 109, gold film 110) and the n-type ohmic electrode 1 1 3 (stacked structure 1 1) provided on the front surface of the LED 12 are mounted on a gold ball formed on a silicon sub-carrier 23 Above block 21, as shown in FIG. A circuit capable of driving a device current is formed between the p-type ohmic electrode 108 (metal reflective film 109, gold film 110) and n-type ohmic electrode 113. The P-type ohmic electrode 108 (metal reflective film 109, gold film 110) and n-type -17-200536159. The surface of the ohmic electrode 1 1 3 has a gold film. Therefore, it can be easily joined. Secondly, an epoxy resin 22 sealing device containing an inhibitor is used to avoid deterioration caused by ultraviolet light, and a light emitting diode (LED) lamp 10 is completed. When the device driving current flows between the n-type ohmic electrode 1 13 and the p-type ohmic electrode 1 0 (metal reflective film 1 10, gold film 1 1 0) in the forward direction, it can be evenly dispersed in the light-emitting layer 105. Over a large area. When a device driving current of 20 mA flows and light is emitted from the LED 12, the light emitting output outside the violet light having a wavelength of about 3 70 nm reaches about 20 lumens / watt (lm / W). When 20mA of forward current flows, the forward voltage Vf drops to about 3.4 V. The sapphire substrate 100 for providing the stacked structure U is removed to expose the surface of the stacked structure on which the plate body 111 made of a material that can transmit the light of the light emitting layer 105 is formed. Therefore, the light absorption of short-wavelength ultraviolet light can be reduced to provide luminous efficiency, and the stacked structure is mechanically supported on the plate body 1 1 1. The driving current can be evenly distributed over a large area of the light emitting layer 105 to widen the light emitting area to provide an LED with a strong light output. The material with the same thermal expansion coefficient as the stack structure 1 1 can be selected as the plate body • 1 1 1. Therefore, even if a current flows for a long time, there is no crack caused by thermal stress in the stacked structure 11 and the reliability of the device is improved. In the LED 12, since the plate body 1 1 1 is formed of glass having a refractive index of 1.5, the light transmission efficiency can be improved. Therefore, a device having excellent light emission characteristics can be formed. That is, the refractive index 1.5 of the plate body 1 1 1 is located between the refractive index of GaN and the epoxy resin (the main material of the stacked structure 1 1). Since the reflection between the interface between the plate body 1 1 1 and GaN (stacked structure 1 1) and the interface between the plate body 1 1 1 and the epoxy resin 22 is reduced, light transmission efficiency can be improved. -18- 200536159-If the LEDs 12 having the structure of the present invention are used, appropriate materials can be selected according to different characteristics such as light transmission efficiency, multi-color light emitting characteristics, and static electricity countermeasures to complete a light emitting device. In the LED lamp 10, since the surface is coated with a fluorescent glass that is extremely resistant to ultraviolet light, a reliable lamp with less deterioration of the resin can be obtained. [Brief description of the drawings] FIG. 1 is a schematic cross-sectional view of a stacked structure formed on a sapphire substrate. U Figure 2 is a schematic cross-sectional view of the LED structure according to the present invention obtained by installing the stacked structure shown in Figure 1. Figure 3 is a plan view of the LED. Fig. 4 is a cross-sectional view of an LED lamp formed by mounting LEDs. [Description of element symbols] 10 LED lights 11 Stacked structure 12 LED 2 1 Gold ball bump 22 Epoxy resin 23 Silicon sub-carrier 100 Substrate 10 1 A1N layer 102 GaN buffer layer 103 η-type contact layer 104 η-type cladding

200536159

1 05 1 06 1 07 108 1 09 110 111 113 U quantum well structure light-emitting layer P type A1X1 GaY1N coating P type contact layer P type ohmic electrode film metal reflection film gold film sheet body η type ohmic electrode film

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Claims (1)

200536159 10. Scope of patent application: 1. An m-group nitride semiconductor light-emitting device, comprising: at least one stacked structure, including two melamine nitride semiconductor layers having different conductivity types, and stacked on two m-group nitrogen A light-emitting layer between an oxide semiconductor layer and a ffl-group nitride semiconductor; a crystalline substrate for setting a stacked structure thereon and removed by the stacked structure; and a plate body made of a transparent material that is transparent to light from the light-emitting layer The formed U is formed on the surface of the stacked structure exposed after the crystalline substrate is removed; wherein the light from the light emitting layer is transmitted through the plate body. 2. The m-nitride semiconductor light-emitting device according to item 1 of the patent application, wherein the plate body is formed of glass. 3. The III-nitride semiconductor light-emitting device according to claim 1 or 2, wherein the crystalline substrate is removed by a laser beam irradiating the interface between the stacked structure and the crystalline substrate. • 4. The 1 [group nitride semiconductor light-emitting device according to any one of claims 1 to 3, which further comprises an ohmic electrode provided on the surface of the stacked structure on the opposite side of the plate body. 5. The m-type nitride semiconductor light-emitting device according to item 4 of the patent application, wherein the front surface of the ohmic electrode is provided with a metal reflective film. 6. The m-type nitride semiconductor light-emitting device as claimed in claim 5, wherein a gold film is provided on the front surface of the metal reflective film. 7. — A method for producing a melon-type nitride semiconductor light-emitting device, comprising the steps of: -21-200536159-. Providing a stacked structure on a crystalline substrate, the stacked structure has two m-type nitride semiconductor layers, and a stack Contained between the two semiconductor layers! The light-emitting layer of the π-nitride semiconductor is removed from the crystalline substrate by the stacked structure to expose the stacked junction to form a plate body on the exposed surface of the stacked structure. The light-transmitting transparent material from the light-emitting layer is formed from the transparent material; The light of the light emitting layer is transmitted by the plate body. 8. An LED lamp provided with a group m nitride semiconductor light-emitting device such as the range of patent applications 1 to 6 w. 9. The LED lamp according to item 8 of the scope of patent application, which further includes a completed sub-carrier, a HI group nitride semiconductor light-emitting device system]; and is mounted on it. There are different conductive HI group nitride hafnium-structured surfaces; the sheet body consists of any of the items and and is mainly composed of silicon and flip -22-