JP2013542617A - Ledパッケージ - Google Patents
Ledパッケージ Download PDFInfo
- Publication number
- JP2013542617A JP2013542617A JP2013538673A JP2013538673A JP2013542617A JP 2013542617 A JP2013542617 A JP 2013542617A JP 2013538673 A JP2013538673 A JP 2013538673A JP 2013538673 A JP2013538673 A JP 2013538673A JP 2013542617 A JP2013542617 A JP 2013542617A
- Authority
- JP
- Japan
- Prior art keywords
- metal substrate
- led
- led package
- package according
- chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229910052751 metal Inorganic materials 0.000 claims abstract description 80
- 239000002184 metal Substances 0.000 claims abstract description 80
- 239000000758 substrate Substances 0.000 claims abstract description 72
- 238000000465 moulding Methods 0.000 claims abstract description 48
- 238000007789 sealing Methods 0.000 claims abstract 2
- 229920006336 epoxy molding compound Polymers 0.000 claims description 13
- 230000000903 blocking effect Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- 230000008569 process Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 238000004080 punching Methods 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 239000012778 molding material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 239000002952 polymeric resin Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229920003002 synthetic resin Polymers 0.000 description 2
- 238000004383 yellowing Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
Description
図示のように、本実施例のLEDパッケージ100は、金属基板110のチップ実装部114に形成されるLEDチップ120の実装領域にキャビティー170が形成され、キャビティー170の底面にLEDチップ120が実装されることができる。前記キャビティー170は、リードフレーム113と陽極端子111及び陰極端子112が形成された金属基板110のプレス加工によるパンチング工程時に同時に形成されることができる。
まず、図6ないし図10は、本発明によるLEDパッケージの製造工程が示された工程図である。
Claims (10)
- 両側に一部が切開されて陽極端子及び陰極端子が形成された金属基板と;
金属基板の中央部の上面に実装されるLEDチップと;
前記金属基板上に封止されて前記LEDチップを密封し、中央部の上面に突出したレンズ部が一体に形成されたモールディング部と;を含むLEDパッケージ。 - 前記金属基板は、外郭部にリードフレームが設けられ、その内側に板状のチップ実装部で構成され、前記リードフレームの角部に切開部によって前記チップ実装部と電気的に短絡された前記陽極端子及び陰極端子が形成されることを特徴とする請求項1に記載のLEDパッケージ。
- 前記陽極端子及び陰極端子は、前記LEDチップとワイヤボンディングによって電気的に接続されることを特徴とする請求項2に記載のLEDパッケージ。
- 前記モールディング部は、透明EMC(Epoxy Molding Compound)を利用して金属基板の上面とLEDチップが封止され、この際、前記レンズ部は、前記モールディング部と同時に形成されることを特徴とする請求項1に記載のLEDパッケージ。
- 前記モールディング部の各側面には、前記モールディング部と密着結合される光遮断膜が設けられることを特徴とする請求項1に記載のLEDパッケージ。
- 前記光遮断膜は、光が吸収または反射されることができるEMCで構成されることを特徴とする請求項5に記載のLEDパッケージ。
- 前記LEDチップは、前記チップ実装部の上面に複数個が所定の間隔で配置されて実装されることを特徴とする請求項2に記載のLEDパッケージ。
- 前記金属基板は、前記チップ実装部にキャビティーが形成され、前記キャビティーの底面にLEDチップが実装されることを特徴とする請求項2に記載のLEDパッケージ。
- 前記キャビティーの内側壁面には、反射部材が形成されることを特徴とする請求項8に記載のLEDパッケージ。
- 前記金属基板のリードフレーム上には、一列で複数個のホールまたは溝が形成されることを特徴とする請求項2に記載のLEDパッケージ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2011-0103065 | 2011-10-10 | ||
KR1020110103065A KR101186815B1 (ko) | 2011-10-10 | 2011-10-10 | Led 패키지 |
PCT/KR2012/005390 WO2013055013A1 (ko) | 2011-10-10 | 2012-07-06 | Led 패키지 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013542617A true JP2013542617A (ja) | 2013-11-21 |
JP5572766B2 JP5572766B2 (ja) | 2014-08-13 |
Family
ID=47287212
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013538673A Active JP5572766B2 (ja) | 2011-10-10 | 2012-07-06 | Ledパッケージ |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP5572766B2 (ja) |
KR (1) | KR101186815B1 (ja) |
CN (1) | CN103270612B (ja) |
WO (1) | WO2013055013A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015062226A (ja) * | 2013-09-23 | 2015-04-02 | 弘凱光電(深セン)有限公司 | 側面漏光防止用の発光ダイオードパッケージ構造及びその製造方法 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101483010B1 (ko) * | 2013-07-29 | 2015-01-19 | 주식회사 굿엘이디 | Led 패키지 |
CN110908180A (zh) * | 2018-09-17 | 2020-03-24 | 夏普株式会社 | 照明装置、显示装置及照明装置的制造方法 |
CN114187849B (zh) * | 2021-12-09 | 2024-03-15 | 惠州华星光电显示有限公司 | Led显示面板及显示设备 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000252524A (ja) * | 1999-02-25 | 2000-09-14 | Citizen Electronics Co Ltd | 表面実装型発光ダイオード及びその製造方法 |
JP2001308387A (ja) * | 2000-04-24 | 2001-11-02 | Pic Corporation:Kk | 発光ダイオード |
JP2003008078A (ja) * | 2001-06-19 | 2003-01-10 | Sanken Electric Co Ltd | 表面実装型半導体発光装置 |
JP2003174200A (ja) * | 2001-12-07 | 2003-06-20 | Hitachi Cable Ltd | 発光装置及びその製造方法、ならびに発光装置の製造に用いるリードフレーム |
JP2006525682A (ja) * | 2003-04-30 | 2006-11-09 | クリー インコーポレイテッド | 高出力固体発光素子パッケージ |
JP2008182242A (ja) * | 2007-01-24 | 2008-08-07 | Cree Inc | 固体発光デバイス用のリード・フレーム・ベースのパッケージと固体発光デバイス用のリード・フレーム・ベースのパッケージを形成する方法 |
JP2009188187A (ja) * | 2008-02-06 | 2009-08-20 | Sanyo Electric Co Ltd | 電子部品及びその製造方法 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101060153A (zh) * | 2007-05-15 | 2007-10-24 | 佛山市国星光电科技有限公司 | 一种侧面发光二极管及其制造工艺 |
KR100874882B1 (ko) * | 2007-06-15 | 2008-12-19 | 삼성전자주식회사 | 반도체 스택 패키지 및 그의 제조 방법 |
KR101121728B1 (ko) * | 2008-06-26 | 2012-03-23 | 서울반도체 주식회사 | 방열 구조를 갖는 led 패키지 |
KR101122059B1 (ko) * | 2008-07-16 | 2012-03-14 | 주식회사 이츠웰 | 표면 실장형 엘이디 패키지와 이를 이용한 백 라이트 유닛 |
KR101078028B1 (ko) * | 2009-06-10 | 2011-10-31 | 주식회사 루멘스 | 발광 소자 패키지 및 발광 소자 패키지용 리드 프레임 |
JP2011049325A (ja) * | 2009-08-26 | 2011-03-10 | Seiko Instruments Inc | 発光部品及びその製造方法 |
CN201868429U (zh) * | 2010-11-29 | 2011-06-15 | 苏州君耀光电有限公司 | 一种内嵌式发光二极管封装结构 |
-
2011
- 2011-10-10 KR KR1020110103065A patent/KR101186815B1/ko active IP Right Grant
-
2012
- 2012-07-06 WO PCT/KR2012/005390 patent/WO2013055013A1/ko active Application Filing
- 2012-07-06 JP JP2013538673A patent/JP5572766B2/ja active Active
- 2012-07-06 CN CN201280002354.9A patent/CN103270612B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000252524A (ja) * | 1999-02-25 | 2000-09-14 | Citizen Electronics Co Ltd | 表面実装型発光ダイオード及びその製造方法 |
JP2001308387A (ja) * | 2000-04-24 | 2001-11-02 | Pic Corporation:Kk | 発光ダイオード |
JP2003008078A (ja) * | 2001-06-19 | 2003-01-10 | Sanken Electric Co Ltd | 表面実装型半導体発光装置 |
JP2003174200A (ja) * | 2001-12-07 | 2003-06-20 | Hitachi Cable Ltd | 発光装置及びその製造方法、ならびに発光装置の製造に用いるリードフレーム |
JP2006525682A (ja) * | 2003-04-30 | 2006-11-09 | クリー インコーポレイテッド | 高出力固体発光素子パッケージ |
JP2008182242A (ja) * | 2007-01-24 | 2008-08-07 | Cree Inc | 固体発光デバイス用のリード・フレーム・ベースのパッケージと固体発光デバイス用のリード・フレーム・ベースのパッケージを形成する方法 |
JP2009188187A (ja) * | 2008-02-06 | 2009-08-20 | Sanyo Electric Co Ltd | 電子部品及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015062226A (ja) * | 2013-09-23 | 2015-04-02 | 弘凱光電(深セン)有限公司 | 側面漏光防止用の発光ダイオードパッケージ構造及びその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR101186815B1 (ko) | 2012-10-02 |
JP5572766B2 (ja) | 2014-08-13 |
WO2013055013A1 (ko) | 2013-04-18 |
CN103270612B (zh) | 2016-06-15 |
CN103270612A (zh) | 2013-08-28 |
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