JP2013539925A5 - - Google Patents

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Publication number
JP2013539925A5
JP2013539925A5 JP2013533871A JP2013533871A JP2013539925A5 JP 2013539925 A5 JP2013539925 A5 JP 2013539925A5 JP 2013533871 A JP2013533871 A JP 2013533871A JP 2013533871 A JP2013533871 A JP 2013533871A JP 2013539925 A5 JP2013539925 A5 JP 2013539925A5
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JP
Japan
Prior art keywords
interconnect
assembly
conductive
polymer
die
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2013533871A
Other languages
English (en)
Japanese (ja)
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JP2013539925A (ja
JP5770852B2 (ja
Filing date
Publication date
Priority claimed from US13/243,877 external-priority patent/US8829677B2/en
Application filed filed Critical
Publication of JP2013539925A publication Critical patent/JP2013539925A/ja
Publication of JP2013539925A5 publication Critical patent/JP2013539925A5/ja
Application granted granted Critical
Publication of JP5770852B2 publication Critical patent/JP5770852B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2013533871A 2010-10-14 2011-09-26 ファインピッチ電気相互接続体を有する半導体ダイ Expired - Fee Related JP5770852B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US39331110P 2010-10-14 2010-10-14
US61/393,311 2010-10-14
US13/243,877 2011-09-23
US13/243,877 US8829677B2 (en) 2010-10-14 2011-09-23 Semiconductor die having fine pitch electrical interconnects
PCT/US2011/053294 WO2012050812A2 (en) 2010-10-14 2011-09-26 Semiconductor die having fine pitch electrical interconnects

Publications (3)

Publication Number Publication Date
JP2013539925A JP2013539925A (ja) 2013-10-28
JP2013539925A5 true JP2013539925A5 (enExample) 2015-05-07
JP5770852B2 JP5770852B2 (ja) 2015-08-26

Family

ID=45938854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013533871A Expired - Fee Related JP5770852B2 (ja) 2010-10-14 2011-09-26 ファインピッチ電気相互接続体を有する半導体ダイ

Country Status (7)

Country Link
US (2) US8829677B2 (enExample)
EP (1) EP2628174A2 (enExample)
JP (1) JP5770852B2 (enExample)
KR (1) KR20130142132A (enExample)
CN (1) CN103283008B (enExample)
TW (1) TWI485827B (enExample)
WO (1) WO2012050812A2 (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8829677B2 (en) 2010-10-14 2014-09-09 Invensas Corporation Semiconductor die having fine pitch electrical interconnects
US8587088B2 (en) 2011-02-17 2013-11-19 Apple Inc. Side-mounted controller and methods for making the same
WO2014032702A1 (en) * 2012-08-28 2014-03-06 Osram Opto Semiconductors Gmbh Light-emitting device and method for manufacturing a light- emitting device
US10600755B2 (en) * 2017-08-10 2020-03-24 Amkor Technology, Inc. Method of manufacturing an electronic device and electronic device manufactured thereby

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5891761A (en) 1994-06-23 1999-04-06 Cubic Memory, Inc. Method for forming vertical interconnect process for silicon segments with thermally conductive epoxy preform
US6080596A (en) 1994-06-23 2000-06-27 Cubic Memory Inc. Method for forming vertical interconnect process for silicon segments with dielectric isolation
US5657206A (en) 1994-06-23 1997-08-12 Cubic Memory, Inc. Conductive epoxy flip-chip package and method
US5675180A (en) 1994-06-23 1997-10-07 Cubic Memory, Inc. Vertical interconnect process for silicon segments
US6124633A (en) 1994-06-23 2000-09-26 Cubic Memory Vertical interconnect process for silicon segments with thermally conductive epoxy preform
US6255726B1 (en) 1994-06-23 2001-07-03 Cubic Memory, Inc. Vertical interconnect process for silicon segments with dielectric isolation
US6271598B1 (en) 1997-07-29 2001-08-07 Cubic Memory, Inc. Conductive epoxy flip-chip on chip
US6803303B1 (en) 2002-07-11 2004-10-12 Micron Technology, Inc. Method of fabricating semiconductor component having encapsulated, bonded, interconnect contacts
US6841883B1 (en) * 2003-03-31 2005-01-11 Micron Technology, Inc. Multi-dice chip scale semiconductor components and wafer level methods of fabrication
US7245021B2 (en) 2004-04-13 2007-07-17 Vertical Circuits, Inc. Micropede stacked die component assembly
US7215018B2 (en) 2004-04-13 2007-05-08 Vertical Circuits, Inc. Stacked die BGA or LGA component assembly
JP4693619B2 (ja) * 2004-12-17 2011-06-01 株式会社半導体エネルギー研究所 導電層を有する基板の作製方法及び半導体装置の作製方法
JP4952915B2 (ja) * 2007-03-08 2012-06-13 セイコーエプソン株式会社 インク層の転写方法および電子装置の製造方法
WO2008115744A1 (en) 2007-03-16 2008-09-25 Vertical Circuits, Inc. Vertical electrical interconnect formed on support prior to die mount
US8723332B2 (en) 2007-06-11 2014-05-13 Invensas Corporation Electrically interconnected stacked die assemblies
TWI473183B (zh) 2007-06-19 2015-02-11 英維瑟斯公司 可堆疊的積體電路晶片的晶圓水平表面鈍化
US7750471B2 (en) 2007-06-28 2010-07-06 Intel Corporation Metal and alloy silicides on a single silicon wafer
US8704379B2 (en) 2007-09-10 2014-04-22 Invensas Corporation Semiconductor die mount by conformal die coating
US8703605B2 (en) * 2007-12-18 2014-04-22 Byung Chun Yang High yield and high throughput method for the manufacture of integrated circuit devices of improved integrity, performance and reliability
US7843046B2 (en) 2008-02-19 2010-11-30 Vertical Circuits, Inc. Flat leadless packages and stacked leadless package assemblies
JP5763924B2 (ja) 2008-03-12 2015-08-12 インヴェンサス・コーポレーション ダイアセンブリを電気的に相互接続して取り付けられたサポート
US9153517B2 (en) 2008-05-20 2015-10-06 Invensas Corporation Electrical connector between die pad and z-interconnect for stacked die assemblies
US8829677B2 (en) 2010-10-14 2014-09-09 Invensas Corporation Semiconductor die having fine pitch electrical interconnects
FR2933425B1 (fr) * 2008-07-01 2010-09-10 Alchimer Procede de preparation d'un film isolant electrique et application pour la metallisation de vias traversants
JP2010034119A (ja) * 2008-07-25 2010-02-12 Panasonic Corp 半導体装置
JP5963671B2 (ja) 2009-06-26 2016-08-03 インヴェンサス・コーポレーション ジグザクの構成でスタックされたダイに関する電気的相互接続
TWI544604B (zh) 2009-11-04 2016-08-01 英維瑟斯公司 具有降低應力電互連的堆疊晶粒總成

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