JP2013539925A5 - - Google Patents
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- Publication number
- JP2013539925A5 JP2013539925A5 JP2013533871A JP2013533871A JP2013539925A5 JP 2013539925 A5 JP2013539925 A5 JP 2013539925A5 JP 2013533871 A JP2013533871 A JP 2013533871A JP 2013533871 A JP2013533871 A JP 2013533871A JP 2013539925 A5 JP2013539925 A5 JP 2013539925A5
- Authority
- JP
- Japan
- Prior art keywords
- interconnect
- assembly
- conductive
- polymer
- die
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims description 19
- 239000011248 coating agent Substances 0.000 claims description 15
- 238000000576 coating method Methods 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims 6
- 229920000642 polymer Polymers 0.000 claims 5
- 239000004593 Epoxy Substances 0.000 claims 4
- 229920000620 organic polymer Polymers 0.000 claims 4
- 229920000052 poly(p-xylylene) Polymers 0.000 claims 4
- 239000011231 conductive filler Substances 0.000 claims 2
- 229910052709 silver Inorganic materials 0.000 claims 2
- 239000004332 silver Substances 0.000 claims 2
- VRBFTYUMFJWSJY-UHFFFAOYSA-N 28804-46-8 Chemical compound ClC1CC(C=C2)=CC=C2C(Cl)CC2=CC=C1C=C2 VRBFTYUMFJWSJY-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229920001940 conductive polymer Polymers 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 229920000592 inorganic polymer Polymers 0.000 claims 1
- 238000000608 laser ablation Methods 0.000 claims 1
- 239000011159 matrix material Substances 0.000 claims 1
- 229920001169 thermoplastic Polymers 0.000 claims 1
- 229920001187 thermosetting polymer Polymers 0.000 claims 1
- 239000004634 thermosetting polymer Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- UDQTXCHQKHIQMH-KYGLGHNPSA-N (3ar,5s,6s,7r,7ar)-5-(difluoromethyl)-2-(ethylamino)-5,6,7,7a-tetrahydro-3ah-pyrano[3,2-d][1,3]thiazole-6,7-diol Chemical compound S1C(NCC)=N[C@H]2[C@@H]1O[C@H](C(F)F)[C@@H](O)[C@@H]2O UDQTXCHQKHIQMH-KYGLGHNPSA-N 0.000 description 1
- 229940125936 compound 42 Drugs 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000002386 leaching Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US39331110P | 2010-10-14 | 2010-10-14 | |
| US61/393,311 | 2010-10-14 | ||
| US13/243,877 | 2011-09-23 | ||
| US13/243,877 US8829677B2 (en) | 2010-10-14 | 2011-09-23 | Semiconductor die having fine pitch electrical interconnects |
| PCT/US2011/053294 WO2012050812A2 (en) | 2010-10-14 | 2011-09-26 | Semiconductor die having fine pitch electrical interconnects |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013539925A JP2013539925A (ja) | 2013-10-28 |
| JP2013539925A5 true JP2013539925A5 (enExample) | 2015-05-07 |
| JP5770852B2 JP5770852B2 (ja) | 2015-08-26 |
Family
ID=45938854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013533871A Expired - Fee Related JP5770852B2 (ja) | 2010-10-14 | 2011-09-26 | ファインピッチ電気相互接続体を有する半導体ダイ |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US8829677B2 (enExample) |
| EP (1) | EP2628174A2 (enExample) |
| JP (1) | JP5770852B2 (enExample) |
| KR (1) | KR20130142132A (enExample) |
| CN (1) | CN103283008B (enExample) |
| TW (1) | TWI485827B (enExample) |
| WO (1) | WO2012050812A2 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8829677B2 (en) | 2010-10-14 | 2014-09-09 | Invensas Corporation | Semiconductor die having fine pitch electrical interconnects |
| US8587088B2 (en) | 2011-02-17 | 2013-11-19 | Apple Inc. | Side-mounted controller and methods for making the same |
| WO2014032702A1 (en) * | 2012-08-28 | 2014-03-06 | Osram Opto Semiconductors Gmbh | Light-emitting device and method for manufacturing a light- emitting device |
| US10600755B2 (en) * | 2017-08-10 | 2020-03-24 | Amkor Technology, Inc. | Method of manufacturing an electronic device and electronic device manufactured thereby |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5891761A (en) | 1994-06-23 | 1999-04-06 | Cubic Memory, Inc. | Method for forming vertical interconnect process for silicon segments with thermally conductive epoxy preform |
| US6080596A (en) | 1994-06-23 | 2000-06-27 | Cubic Memory Inc. | Method for forming vertical interconnect process for silicon segments with dielectric isolation |
| US5657206A (en) | 1994-06-23 | 1997-08-12 | Cubic Memory, Inc. | Conductive epoxy flip-chip package and method |
| US5675180A (en) | 1994-06-23 | 1997-10-07 | Cubic Memory, Inc. | Vertical interconnect process for silicon segments |
| US6124633A (en) | 1994-06-23 | 2000-09-26 | Cubic Memory | Vertical interconnect process for silicon segments with thermally conductive epoxy preform |
| US6255726B1 (en) | 1994-06-23 | 2001-07-03 | Cubic Memory, Inc. | Vertical interconnect process for silicon segments with dielectric isolation |
| US6271598B1 (en) | 1997-07-29 | 2001-08-07 | Cubic Memory, Inc. | Conductive epoxy flip-chip on chip |
| US6803303B1 (en) | 2002-07-11 | 2004-10-12 | Micron Technology, Inc. | Method of fabricating semiconductor component having encapsulated, bonded, interconnect contacts |
| US6841883B1 (en) * | 2003-03-31 | 2005-01-11 | Micron Technology, Inc. | Multi-dice chip scale semiconductor components and wafer level methods of fabrication |
| US7245021B2 (en) | 2004-04-13 | 2007-07-17 | Vertical Circuits, Inc. | Micropede stacked die component assembly |
| US7215018B2 (en) | 2004-04-13 | 2007-05-08 | Vertical Circuits, Inc. | Stacked die BGA or LGA component assembly |
| JP4693619B2 (ja) * | 2004-12-17 | 2011-06-01 | 株式会社半導体エネルギー研究所 | 導電層を有する基板の作製方法及び半導体装置の作製方法 |
| JP4952915B2 (ja) * | 2007-03-08 | 2012-06-13 | セイコーエプソン株式会社 | インク層の転写方法および電子装置の製造方法 |
| WO2008115744A1 (en) | 2007-03-16 | 2008-09-25 | Vertical Circuits, Inc. | Vertical electrical interconnect formed on support prior to die mount |
| US8723332B2 (en) | 2007-06-11 | 2014-05-13 | Invensas Corporation | Electrically interconnected stacked die assemblies |
| TWI473183B (zh) | 2007-06-19 | 2015-02-11 | 英維瑟斯公司 | 可堆疊的積體電路晶片的晶圓水平表面鈍化 |
| US7750471B2 (en) | 2007-06-28 | 2010-07-06 | Intel Corporation | Metal and alloy silicides on a single silicon wafer |
| US8704379B2 (en) | 2007-09-10 | 2014-04-22 | Invensas Corporation | Semiconductor die mount by conformal die coating |
| US8703605B2 (en) * | 2007-12-18 | 2014-04-22 | Byung Chun Yang | High yield and high throughput method for the manufacture of integrated circuit devices of improved integrity, performance and reliability |
| US7843046B2 (en) | 2008-02-19 | 2010-11-30 | Vertical Circuits, Inc. | Flat leadless packages and stacked leadless package assemblies |
| JP5763924B2 (ja) | 2008-03-12 | 2015-08-12 | インヴェンサス・コーポレーション | ダイアセンブリを電気的に相互接続して取り付けられたサポート |
| US9153517B2 (en) | 2008-05-20 | 2015-10-06 | Invensas Corporation | Electrical connector between die pad and z-interconnect for stacked die assemblies |
| US8829677B2 (en) | 2010-10-14 | 2014-09-09 | Invensas Corporation | Semiconductor die having fine pitch electrical interconnects |
| FR2933425B1 (fr) * | 2008-07-01 | 2010-09-10 | Alchimer | Procede de preparation d'un film isolant electrique et application pour la metallisation de vias traversants |
| JP2010034119A (ja) * | 2008-07-25 | 2010-02-12 | Panasonic Corp | 半導体装置 |
| JP5963671B2 (ja) | 2009-06-26 | 2016-08-03 | インヴェンサス・コーポレーション | ジグザクの構成でスタックされたダイに関する電気的相互接続 |
| TWI544604B (zh) | 2009-11-04 | 2016-08-01 | 英維瑟斯公司 | 具有降低應力電互連的堆疊晶粒總成 |
-
2011
- 2011-09-23 US US13/243,877 patent/US8829677B2/en not_active Expired - Fee Related
- 2011-09-26 CN CN201180059481.8A patent/CN103283008B/zh not_active Expired - Fee Related
- 2011-09-26 JP JP2013533871A patent/JP5770852B2/ja not_active Expired - Fee Related
- 2011-09-26 WO PCT/US2011/053294 patent/WO2012050812A2/en not_active Ceased
- 2011-09-26 KR KR1020137012495A patent/KR20130142132A/ko not_active Ceased
- 2011-09-26 EP EP11833001.8A patent/EP2628174A2/en not_active Withdrawn
- 2011-09-30 TW TW100135584A patent/TWI485827B/zh not_active IP Right Cessation
-
2014
- 2014-09-08 US US14/480,373 patent/US20150056753A1/en not_active Abandoned
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