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  • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
  • H10W70/093—Connecting or disconnecting other interconnections thereto or therefrom, e.g. connecting bond wires or bumps
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  • H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
  • H10W72/01933—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating
  • H10W72/01935—Manufacture or treatment of bond pads using blanket deposition in liquid form, e.g. spin coating, spray coating or immersion coating by plating, e.g. electroless plating or electroplating
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  • H10W72/01931—Manufacture or treatment of bond pads using blanket deposition
  • H10W72/01938—Manufacture or treatment of bond pads using blanket deposition in gaseous form, e.g. by CVD or PVD
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  • H10W72/019—Manufacture or treatment of bond pads
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  • H10W72/221—Structures or relative sizes
  • H10W72/225—Bumps having a filler embedded in a matrix
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  • H10W72/00—Interconnections or connectors in packages
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  • H10W72/231—Shapes
  • H10W72/234—Cross-sectional shape, i.e. in side view
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  • H10W72/00—Interconnections or connectors in packages
  • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
  • H10W72/251—Materials
  • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
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  • H10W72/251—Materials
  • H10W72/253—Materials not comprising solid metals or solid metalloids, e.g. polymers or ceramics
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  • H10W72/351—Materials of die-attach connectors
  • H10W72/353—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics
  • H10W72/354—Materials of die-attach connectors not comprising solid metals or solid metalloids, e.g. ceramics comprising polymers
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  • H10W72/941—Dispositions of bond pads
  • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
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  • H10W72/951—Materials of bond pads
  • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
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  • H10W74/47—Encapsulations, e.g. protective coatings characterised by their materials comprising organic materials, e.g. plastics or resins
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  • H10W90/24—Configurations of stacked chips at least one of the stacked chips being laterally offset from a neighbouring stacked chip, e.g. chip stacks having a staircase shape
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  • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
  • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips

Definitions

• This invention relates to electrical interconnection of integrated circuit chips and, particularly, to interconnection of assemblies including one or more integrated circuit chips.
• a typical semiconductor die has a front ("active") side, in which the integrated circuitry is formed, a back side, and sidewalls. The sidewalls meet the front side at front edges and the back side at back edges.
• Semiconductor die typically are provided with interconnect pads (die pads) located at the front side for electrical interconnection of the circuitry on the die with other circuitry in the device in which the die is deployed.
• Some die as provided have die pads on the front side along one or more of the die margins, and these may be referred to as peripheral pad die.
• Other die as provided have die pads arranged in one or two rows at the front side near the center of the die, and these may be referred to as central pad die.
• the die may be "rerouted” to provide a suitable arrangement of interconnect pads at or near one or more of the margins of the die.
• a die margin along which interconnect pads are arranged may be referred to as an "interconnect margin”
• the adjacent front die edge may be referred to as an "interconnect edge”
• a die sidewall adjacent an interconnect die edge may be referred to as an "interconnect sidewall”.
• Semiconductor die may be electrically connected with other circuitry, for example in a printed circuit board, a package substrate or leadframe, or another die, by any of several means. Connection may be made, for example, by wire bonds, or by flip chip interconnects, or by tab interconnects.
• a dielectric coating formed over the die surface prior to forming the interconnects surface serves to insulate features that might otherwise be contacted by the electrically conductive traces, but to which electrical contact is not desired, such as the die margins along which the die pads are situated, and the adjacent die edges and sidewalls; and die pads over which the traces may pass, but which are not intended to be electrically connected to other features.
• the dielectric coating may by any of a variety of materials, and may be formed using any of a variety of techniques as appropriate for the particular material. Suitable materials include organic polymers, and particularly suitable materials include parylenes, which are formed by in situ polymerization of precursor molecules in vapor form.
• the coating covers all surfaces that are exposed to the material during the coating process, including areas where electrical connection is to be made. Accordingly, openings are formed over selected areas where contact with the conductive traces is desired, for example by selective laser ablation.
• Electrode interconnected stacked die assemblies which is incorporated herein by reference, describes stacked die assemblies having various stacking configurations in which electrical interconnection is made using an interconnect material such as a material that includes a conductive polymer or a conductive ink, for example.
• an interconnect material such as a material that includes a conductive polymer or a conductive ink, for example.
• each die has interconnect pads situated in a margin along an interconnect edge, and succeeding die in the stack arranged so that their respective interconnect edges face toward the same face of the stack, and the interconnect die edges are offset so that the configuration presents as a stairstep die stack, and the interconnections are made over the steps.
• the invention features an assembly including a die having interconnect pads at interconnect side near an interconnect edge and having at least a portion of the interconnect side covered by a conformal dielectric coating, wherein an interconnect trace over the dielectric coating forms a high interface angle with the surface of the dielectric coating. Because the traces have a high interface angle, a tendency for the interconnect materials to "bleed" laterally is mitigated and contact or overlap of adjacent traces is avoided.
• interconnect trace includes a curable electrically conductive interconnect material; that is, it includes a material that can be applied in a flowable form, and thereafter cured or allowed to cure to form the conductive traces.
• the interconnect material includes a curable electrically conductive polymer or an electrically conductive ink.
• the interconnect material is an electrically conductive polymer; suitable electrically conductive polymers include polymers filled with conductive material in particle form such as, for example, metal-filled polymers, including for example metal filled epoxy, metal filled thermosetting polymers, metal filled thermoplastic polymers, or an electrically conductive ink.
• the conductive particles may range widely in size and shape; they may be for example nanoparticles or larger particles.
• the electrically conductive polymer is a curable polymer, and may be curable in stages.
• the interconnect material may include, for example, a matrix containing an electrically conductive filler; the matrix may be a curable or settable material, and the electrically conductive fill may be in particulate form, for example, such that when the matrix sets or is cured, the material is itself electrically conductive.
• the material includes a conductive epoxy such as a silver filled epoxy; for example, a filled epoxy having 60 - 90% (more usually 80 - 85%) silver may be suitable.
• the material includes a The epoxy is cured following dispensing, resulting in some embodiments in a fusion of the series of dots into a continuous interconnect strand.
• the surface of the feature to be electrically connected may optionally be provided with an element (or elements) which, under the cure conditions, can together with an element (or elements) in the interconnect material, form an intermetallic at the interface of the interconnect material and the pad or site surface.
• an intermetallic can result in improved electrical conductivity in the traces and can result in improved continuity between the pad or site and the trace.
• suitable interconnect materials include electrically conductive pastes that include an organic polymer with various proportions of particles of Cu, Bi and Sn, or Cu, Bi, Sn and Ag. During cure, these materials can form intermetallics in the trace itself
• these materials can form AuSn intermetallics at the interface of the trace and the surface of the pad or site.
• Suitable interconnect materials include silver-filled epoxies.
• the material of the conformal dielectric coating includes a nonorganic (inorganic) polymer, which may be a silicon-based polymer; a sol-gel glass deposit may be a suitable inorganic polymer.
• the material of the conformal coating includes an organic polymer, such as for example a polyimid, a benzocyclobutene (BCB), an epoxy, or a cyanoacrylate.
• the material of the conformal coating includes a hybrid (inorganic-organic) polymer; a silicon-based polymer combined with an organic polymer may be suitable, for example.
• the conformal coating includes a halogenated polymer such as for example a polymer of p-xylene or a derivative thereof, such as a polyxylylene polymer, e.g., a parylene C or a parylene N, or a parylene A, or a parylene SR.
• a halogenated polymer such as for example a polymer of p-xylene or a derivative thereof, such as a polyxylylene polymer, e.g., a parylene C or a parylene N, or a parylene A, or a parylene SR.
• the conformal coating is formed by deposition, for example by vapor deposition, or liquid phase deposition, or by solid phase deposition.
• the assembly includes two or more die, stacked in an offset (stairstep) configuration and electrically connected. In some embodiments the assembly includes at least one die, or a stack of die, mounted onto and electrically connected to a support such as a substrate.
• the interface angle measured by analogy to a "contact angle" at which a liquid/vapor interface meets a solid surface, may approach or exceed approximately 90° and, in various embodiments, may be in a range between about 60° and about 120°, more usually in a range between about 75° and about 105°, and in particular embodiments in a range between about 75° and about 90°.
• the invention features methods for forming the assemblies, including treating the surface of the conformal coating with a CF 4 plasma prior to applying the interconnect material over it. Hence, this procedure reduces the "wettablility" of the interconnect material on the conformal coating surface to the interconnect material.
• the CF 4 plasma treatment may be carried out subsequent to forming openings over selected features (for example, by laser ablation); and usually in such embodiments a plasma clean (for example, an Ar plasma treatment) follows the procedure of forming openings in the dielectric coating, and the CF4 treatment may follow the plasma clean.
• the assemblies according to the invention can be used in any electronic system, particularly in a small-format application such as a portable or hand-held device; for example the assemblies can be used for building computers such as personal computers, telecommunications equipment, and consumer and industrial electronics devices.
• FIG. 1 is a photograph showing electrical interconnects in an overview.
• FIG. 2A is a photograph showing electrical interconnects in a sectional view.
• FIG. 2B is a sketch identifying features appearing in the photograph in FIG. 2A.
• FIG. 3 is a photograph showing improved electrical interconnects in an overview.
• FIG. 4A is a photograph showing an improved electrical interconnect in a sectional view.
• FIG. 4B is a sketch identifying features appearing in the photograph in FIG. 4A.
• FIG. 5 is a flow diagram showing stages in a process for making improved electrical interconnects.
• FIG. 1 is a photograph showing a portion of a stack of electrically interconnected die.
• an upper die 10 is stacked over an underlying lower die 10'.
• Interconnect pads 15 are arranged along an interconnect edge 11 of the upper die 10
• Interconnect pads 15' are arranged along an interconnect edge (outside the frame of the photograph) of the lower die 10'.
• the die in the stack are offset; that is, the interconnect edge 11 of the upper die 10 is offset in relation to the interconnect edge of the lower die 10', so that the interconnect pads 15' are revealed.
• the die in the stack are electrically interconnected by conductive traces 18.
• FIGs 2A and 2B show in sectional view a portion of a die mounted on a die attach surface of a substrate and having electrical interconnect traces formed over interconnect pads.
• FIG. 2A is a photograph
• FIG. 2B is a sketch made by tracing over the photograph, to aid in identifying certain features.
• integrated circuitry in an active side of the die is electrically connected to interconnect pads on an interconnect surface of the die.
• the interconnect surface of the die is conventionally covered with a passivation layer, which is patterned (for example by a mask-and-etch procedure) to expose the die surface; and interconnect pads (and electrical traces leading to them) are conventionally formed by forming a metal layer over the passivated interconnect surface of the die, and then patterning the metal layer (for example by a mask-and-etch procedure).
• the die is oriented in relation to the substrate such that the interconnect surface of the die faces away from the die mount surface of the substrate.
• the die 10 is mounted on the substrate 20 using an adhesive 12 such as a die attach film.
• the substrate is provided with pads exposed at the die attach surface, for electrical connection of the die with the substrate circuitry. (Some of the circuitry on and in the substrate is outside the frame of the photograph, and details of the circuitry on and in the substrate are omitted from the FIGs.)
• the portion of the substrate 20 shown here includes layers of a dielectric material and a patterned metal layer or metallization 22.
• the die 10 has interconnect pads 15 formed at the die surface.
• the die surface between the pads 15 is covered by a passivation 14, and an electrically insulative conformal coating 16 is formed over the pads 15 and the passivation 14.
• the passivation 14 may be, for example, an inorganic dielectric such as an inorganic oxide, e.g., a silicon oxide; or, for example, an organic dielectric polymer, e.g., a polyimid, or a parylene.
• the electrically insulative conformal coating 16 may be, for example, an organic dielectric polymer, such as a parylene. In a particular example the conformal dielectric coating is a parylene.
• Openings through the insulative conformal coating are formed (for example, by laser ablation) to expose features where electrical contact with a later-formed overlying trace is desired. (Openings through the conformal coating are not shown in FIG 2B, as they do not appear in FIG. 2A; either there are no opening in the particular pads shown, or else any openings are outside the frame of the photograph.)
• the interconnect die pads may include a metal, for example, and may in particular examples include one or more metals such as aluminum, or copper, or gold, for example.
• a gold or palladium contact surface may be preferred, and in such embodiments the die pads may be either gold or another metal treated (for example, by a plating or sputtering procedure) to have a gold or palladium contact surface.
• a palladium contact surface is formed by plating or sputtering the pad with nickel and then with palladium.
• the die pads include gold at the contact surface.
• interconnect traces 18 are formed of a conductive material that is applied in flowable form, and then cured or allowed to cure to complete the traces.
• Such materials include, for example, electrically conductive polymers, including electrically conductive particulates (e.g., conductive metal particles) contained in a curable organic polymer matrix (for example, conductive (e.g., filled) epoxies, or electrically conductive inks); and include, for example, electrically conductive particulates delivered in a liquid carrier.
• the interconnect material is a conductive polymer such as a curable conductive polymer, or a conductive ink.
• the conductive material can include electrically conductive particles in a curable polymer matrix.
• the conductive material includes particles of Bismuth, Copper, and Tin in an epoxy matrix.
• the interconnect material adjacent the pad surface in these examples has spread at the edges and, in at least some instances the edges of adjacent traces contact or overlap. This can result in electrical leakage between adjacent traces, which is an unacceptable condition.
• FIGs. 3, 4A, and 4B An example of a resulting structure is presented in FIGs. 3, 4A, and 4B.
• the materials are substantially similar to those used in the examples of FIGs. 1 , 2A, and 2B; and the process for making the examples was substantially similar, except that here a CF 4 plasma treatment preceded the process of forming the traces.
• the traces 48 can be seen to be well- confined, with only slight "feathering" at the edges 47.
• the traces display a high interface angle ⁇ at the intersection of the trace material and the pad surface, and very little or no "run out” or “bleed” of the interconnect material at the edges adjacent the pad surface.
• an opening is shown in the conformal dielectric coating, allowing contact of the interconnect material with the pad surface, and formation of an intermetallic 42 at the interface of the interconnect material and the pad.
• FIG. 5 shows stages in a process for making improved interconnects.
• a die is provided having interconnect pads at an interconnect side; or a stack of die is provided having interconnect pads at an interconnect side. Any of a variety of die types may be treated according to embodiments of the invention; and where a stack of die is provided, the die may be arranged in any of a variety of stack configurations.
• each die has interconnect pads situated in a margin along at least a first die edge, and succeeding die in the stack may be arranged so that their respective first die edges ("interconnect die edges") face toward the same face of the stack (the "interconnect stack face").
• interconnect die edges are all generally vertically aligned over one another; that is, the interconnect stack face is generally planar and perpendicular to a plane (arbitrarily a "horizontal" plane) of the top and bottom stack surface.
• each die in the stack is offset in relation to an underlying die, exposing a portion of the interconnect margin of the underlying die.
• each die has interconnect margins along at least a first die edge, but succeeding die in the stack are arranged so that their respective first die edges face toward a different (e.g., opposite) face of the stack. Where the first die edges face toward an opposite stack face, this configuration presents as a "staggered” die stack, where (numbering the die sequentially from the bottom of the stack) the first die edges of odd-numbered die face toward one stack face and the first die edges of even-numbered die face toward the opposite stack face.
• the first die edges of the odd-numbered die are vertically aligned at one stack face, and corresponding overlying pads can be connected by a vertical interconnect; and the even-numbered die are vertically aligned at the opposite stack face, and corresponding overlying pads can be connected by another vertical interconnect.
• the even-numbered die serve as spacers between the odd-numbered die, and the odd-numbered die act as spacers between the even-numbered die. Because the spaces between the die are comparatively high, (approximately the thickness of the interposed die), the interconnect traces are formed to traverse portions of the interconnect distance unsupported.
• die having an X-dimension greater than a Y-dimension are stacked, with succeeding die in the stack oriented at 90° in relation to vertically adjacent die below or above.
• each die has interconnect pads situated in a margin along at least a first narrower die edge (typically along both narrower die edges), and (numbering the die sequentially from the bottom of the stack) the first die edge of the even-numbered die may face toward one face of the stack, and the first die edge of the odd-numbered die may face toward a second stack face, at 90° to the first stack face.
• each die may additionally have interconnect pads situated in a margin along a second die edge in addition to the first, and the second die edge may be an opposite edge or an adjacent (at 90°) die edge.
• Some stack configurations include arrangements in which the die in the stack have the same length and width dimensions, and/or arrangements in which not all the die in the stack have the same length or the same width dimensions.
• at least one die may have a smaller length or width dimension than an underlying die, and these may present as a "pyramid", as viewed toward at least two opposite ones of the stack faces.
• any such surfaces may make electrical contact with the conductive trace, except where the surfaces are electrically insulated. Accordingly surfaces of the die that may contact the interconnect traces, and at which no electrical contact is desired, should be electrically insulated. This may be accomplished, for example, by applying a conformal dielectric film over the surfaces as in a stage 52, and then forming openings in the film where electrical contact is desired as in a stage 53.
• the material of the conformal coating includes a film of an organic polymer, for example a polymer of p-xylene or a derivative thereof, such as a polyxylylene polymer, e.g., a parylene C or a parylene N, or a parylene A, or a parylene SR.
• the conformal coating is formed by deposition, for example by vapor deposition, or liquid phase deposition, or by solid phase deposition.
• a particularly suitable dielectric film is a parylene film, and the film may be applied to the die prior to assembly in a stack; or after assembly but prior to forming one or more of the interconnect traces.
• the dielectric conformal coating is formed to a thickness sufficient to provide a continuous coating (free of pinholes), and sufficient to provide electrical insulation with a dielectric strength that meets or exceeds the requirements of the underlying circuitry.
• Parylene coating thicknesses in a range about 1 urn to about 5 urn may be suitable, for example. Parylene coating may be carried out using standard parylene apparatus.
• the wafer is removed from the parylene chamber and a laser ablation system is used to remove the coating from the selected features (such as, for example, interconnect die pads to be electrically interconnected).
• the laser must be operated at a wavelength at which there is appreciable energy absorption in the coating layer, considering that parylene is substantially transparent in the visible range between 300 and 800 nanometers.
• the removal of coating material from the pads may be carried out at a later stage, at any time up to the time electrical connection of the die is to be carried out.
• the laser ablation procedure is typically followed by a plasma clean, in a stage 54, such as an Ar plasma treatment, as may be conventionally employed.
• a CF 4 plasma treatment is carried out.
• the following parameters may be suitable:
• Power in a range about 100 to about 800 watts
• Pressure in a range about 50 millitorr to about 500 millitorr
• Time in a range about 10 seconds to about 30 minutes
• the CF 4 treatment can be carried out in steps as follows: in a 2-step procedure, an Ar plasma clean is followed by a CF 4 treatment.
• an Ar plasma clean is followed by a N plasma treatment, which is then followed a CF 4 treatment;
• an Ar plasma clean is followed by a CF 4 treatment, which is followed by a second Ar plasma treatment (to back off the result of the CF 4 treatment to some extent).
• the CF4 treatment is followed by a procedure 56 of depositing the interconnect material, and thereafter the interconnect material is cured or allowed to cure, at a stage 57, to form the interconnect traces.

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• 2011
  • 2011-09-23 US US13/243,877 patent/US8829677B2/en not_active Expired - Fee Related
  • 2011-09-26 CN CN201180059481.8A patent/CN103283008B/zh not_active Expired - Fee Related
  • 2011-09-26 JP JP2013533871A patent/JP5770852B2/ja not_active Expired - Fee Related
  • 2011-09-26 WO PCT/US2011/053294 patent/WO2012050812A2/en not_active Ceased
  • 2011-09-26 KR KR1020137012495A patent/KR20130142132A/ko not_active Ceased
  • 2011-09-26 EP EP11833001.8A patent/EP2628174A2/en not_active Withdrawn
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• 2014
  • 2014-09-08 US US14/480,373 patent/US20150056753A1/en not_active Abandoned

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