JP2013536996A - 太陽光発電装置及びその製造方法 - Google Patents

太陽光発電装置及びその製造方法 Download PDF

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Publication number
JP2013536996A
JP2013536996A JP2013526987A JP2013526987A JP2013536996A JP 2013536996 A JP2013536996 A JP 2013536996A JP 2013526987 A JP2013526987 A JP 2013526987A JP 2013526987 A JP2013526987 A JP 2013526987A JP 2013536996 A JP2013536996 A JP 2013536996A
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JP
Japan
Prior art keywords
layer
power generation
light absorption
groove
back electrode
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Pending
Application number
JP2013526987A
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English (en)
Japanese (ja)
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JP2013536996A5 (enExample
Inventor
ウー リー、ジン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
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LG Innotek Co Ltd
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Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of JP2013536996A publication Critical patent/JP2013536996A/ja
Publication of JP2013536996A5 publication Critical patent/JP2013536996A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
JP2013526987A 2010-09-01 2011-04-27 太陽光発電装置及びその製造方法 Pending JP2013536996A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020100085584A KR101172178B1 (ko) 2010-09-01 2010-09-01 태양광 발전장치 및 이의 제조방법
KR10-2010-0085584 2010-09-01
PCT/KR2011/003119 WO2012030046A1 (ko) 2010-09-01 2011-04-27 태양광 발전장치 및 이의 제조방법

Publications (2)

Publication Number Publication Date
JP2013536996A true JP2013536996A (ja) 2013-09-26
JP2013536996A5 JP2013536996A5 (enExample) 2014-06-19

Family

ID=45773085

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2013526987A Pending JP2013536996A (ja) 2010-09-01 2011-04-27 太陽光発電装置及びその製造方法

Country Status (6)

Country Link
US (1) US20130019943A1 (enExample)
EP (1) EP2538453A1 (enExample)
JP (1) JP2013536996A (enExample)
KR (1) KR101172178B1 (enExample)
CN (1) CN103069576A (enExample)
WO (1) WO2012030046A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016540248A (ja) * 2013-12-03 2016-12-22 セイジ・エレクトロクロミクス，インコーポレイテッド 電気活性素子および電気活性素子の作製方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR112014027376A2 (pt) * 2012-05-03 2017-06-27 Nexcis gravura por laser de um empilhamento de camadas finas para uma conexão de célula fotovoltaica
CN120529652A (zh) * 2025-05-21 2025-08-22 福莱特玻璃集团股份有限公司 一种薄膜太阳能电池及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041266A (ja) * 1983-08-15 1985-03-04 Semiconductor Energy Lab Co Ltd 半導体装置作製方法およびその作製用装置
JP2001156320A (ja) * 1999-11-29 2001-06-08 Canon Inc 半導体素子の製造方法
JP2001274447A (ja) * 2000-03-23 2001-10-05 Kanegafuchi Chem Ind Co Ltd 集積型薄膜太陽電池の製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4785827B2 (ja) * 2007-12-27 2011-10-05 三洋電機株式会社 太陽電池モジュール及びその製造方法
DE102008060404A1 (de) * 2008-07-30 2010-02-11 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Einseitig kontaktiertes Dünnschicht-Solarmodul mit einer inneren Kontaktschicht
KR20100030944A (ko) * 2008-09-11 2010-03-19 엘지이노텍 주식회사 태양전지의 제조방법
US20100288335A1 (en) * 2009-10-02 2010-11-18 Sunlight Photonics Inc. Degradation-resistant photovoltaic devices
US8241940B2 (en) * 2010-02-12 2012-08-14 Solexel, Inc. Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041266A (ja) * 1983-08-15 1985-03-04 Semiconductor Energy Lab Co Ltd 半導体装置作製方法およびその作製用装置
JP2001156320A (ja) * 1999-11-29 2001-06-08 Canon Inc 半導体素子の製造方法
JP2001274447A (ja) * 2000-03-23 2001-10-05 Kanegafuchi Chem Ind Co Ltd 集積型薄膜太陽電池の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016540248A (ja) * 2013-12-03 2016-12-22 セイジ・エレクトロクロミクス，インコーポレイテッド 電気活性素子および電気活性素子の作製方法
US11194211B2 (en) 2013-12-03 2021-12-07 Sage Electrochromics, Inc. Methods for producing lower electrical isolation in electrochromic films
US12360426B2 (en) 2013-12-03 2025-07-15 Sage Electrochromics, Inc. Methods for producing lower electrical isolation in electrochromic films

Also Published As

Publication number Publication date
US20130019943A1 (en) 2013-01-24
WO2012030046A1 (ko) 2012-03-08
CN103069576A (zh) 2013-04-24
EP2538453A1 (en) 2012-12-26
KR101172178B1 (ko) 2012-08-07
KR20120022231A (ko) 2012-03-12

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