KR101172178B1 - 태양광 발전장치 및 이의 제조방법 - Google Patents

태양광 발전장치 및 이의 제조방법 Download PDF

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Publication number
KR101172178B1
KR101172178B1 KR1020100085584A KR20100085584A KR101172178B1 KR 101172178 B1 KR101172178 B1 KR 101172178B1 KR 1020100085584 A KR1020100085584 A KR 1020100085584A KR 20100085584 A KR20100085584 A KR 20100085584A KR 101172178 B1 KR101172178 B1 KR 101172178B1
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KR
South Korea
Prior art keywords
layer
holes
light absorbing
back electrode
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020100085584A
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English (en)
Korean (ko)
Other versions
KR20120022231A (ko
Inventor
이진우
Original Assignee
엘지이노텍 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지이노텍 주식회사 filed Critical 엘지이노텍 주식회사
Priority to KR1020100085584A priority Critical patent/KR101172178B1/ko
Priority to PCT/KR2011/003119 priority patent/WO2012030046A1/ko
Priority to CN2011800397400A priority patent/CN103069576A/zh
Priority to US13/639,683 priority patent/US20130019943A1/en
Priority to JP2013526987A priority patent/JP2013536996A/ja
Priority to EP11822021A priority patent/EP2538453A1/en
Publication of KR20120022231A publication Critical patent/KR20120022231A/ko
Application granted granted Critical
Publication of KR101172178B1 publication Critical patent/KR101172178B1/ko
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
KR1020100085584A 2010-09-01 2010-09-01 태양광 발전장치 및 이의 제조방법 Expired - Fee Related KR101172178B1 (ko)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020100085584A KR101172178B1 (ko) 2010-09-01 2010-09-01 태양광 발전장치 및 이의 제조방법
PCT/KR2011/003119 WO2012030046A1 (ko) 2010-09-01 2011-04-27 태양광 발전장치 및 이의 제조방법
CN2011800397400A CN103069576A (zh) 2010-09-01 2011-04-27 太阳能发电装置及其制造方法
US13/639,683 US20130019943A1 (en) 2010-09-01 2011-04-27 Solar power generating device, and method for manufacturing same
JP2013526987A JP2013536996A (ja) 2010-09-01 2011-04-27 太陽光発電装置及びその製造方法
EP11822021A EP2538453A1 (en) 2010-09-01 2011-04-27 Solar power generating device, and method for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020100085584A KR101172178B1 (ko) 2010-09-01 2010-09-01 태양광 발전장치 및 이의 제조방법

Publications (2)

Publication Number Publication Date
KR20120022231A KR20120022231A (ko) 2012-03-12
KR101172178B1 true KR101172178B1 (ko) 2012-08-07

Family

ID=45773085

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020100085584A Expired - Fee Related KR101172178B1 (ko) 2010-09-01 2010-09-01 태양광 발전장치 및 이의 제조방법

Country Status (6)

Country Link
US (1) US20130019943A1 (enExample)
EP (1) EP2538453A1 (enExample)
JP (1) JP2013536996A (enExample)
KR (1) KR101172178B1 (enExample)
CN (1) CN103069576A (enExample)
WO (1) WO2012030046A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR112014027376A2 (pt) * 2012-05-03 2017-06-27 Nexcis gravura por laser de um empilhamento de camadas finas para uma conexão de célula fotovoltaica
US20150153622A1 (en) 2013-12-03 2015-06-04 Sage Electrochromics, Inc. Methods for producing lower electrical isolation in electrochromic films
CN120529652A (zh) * 2025-05-21 2025-08-22 福莱特玻璃集团股份有限公司 一种薄膜太阳能电池及其制备方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274447A (ja) 2000-03-23 2001-10-05 Kanegafuchi Chem Ind Co Ltd 集積型薄膜太陽電池の製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041266A (ja) * 1983-08-15 1985-03-04 Semiconductor Energy Lab Co Ltd 半導体装置作製方法およびその作製用装置
JP4473995B2 (ja) * 1999-11-29 2010-06-02 キヤノン株式会社 半導体素子の製造方法
JP4785827B2 (ja) * 2007-12-27 2011-10-05 三洋電機株式会社 太陽電池モジュール及びその製造方法
DE102008060404A1 (de) * 2008-07-30 2010-02-11 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Einseitig kontaktiertes Dünnschicht-Solarmodul mit einer inneren Kontaktschicht
KR20100030944A (ko) * 2008-09-11 2010-03-19 엘지이노텍 주식회사 태양전지의 제조방법
US20100288335A1 (en) * 2009-10-02 2010-11-18 Sunlight Photonics Inc. Degradation-resistant photovoltaic devices
US8241940B2 (en) * 2010-02-12 2012-08-14 Solexel, Inc. Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274447A (ja) 2000-03-23 2001-10-05 Kanegafuchi Chem Ind Co Ltd 集積型薄膜太陽電池の製造方法

Also Published As

Publication number Publication date
US20130019943A1 (en) 2013-01-24
WO2012030046A1 (ko) 2012-03-08
CN103069576A (zh) 2013-04-24
EP2538453A1 (en) 2012-12-26
KR20120022231A (ko) 2012-03-12
JP2013536996A (ja) 2013-09-26

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