CN103069576A - 太阳能发电装置及其制造方法 - Google Patents

太阳能发电装置及其制造方法 Download PDF

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Publication number
CN103069576A
CN103069576A CN2011800397400A CN201180039740A CN103069576A CN 103069576 A CN103069576 A CN 103069576A CN 2011800397400 A CN2011800397400 A CN 2011800397400A CN 201180039740 A CN201180039740 A CN 201180039740A CN 103069576 A CN103069576 A CN 103069576A
Authority
CN
China
Prior art keywords
hole
light absorbing
layer
solar cell
absorbing zone
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800397400A
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English (en)
Chinese (zh)
Inventor
李真宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Publication of CN103069576A publication Critical patent/CN103069576A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
CN2011800397400A 2010-09-01 2011-04-27 太阳能发电装置及其制造方法 Pending CN103069576A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020100085584A KR101172178B1 (ko) 2010-09-01 2010-09-01 태양광 발전장치 및 이의 제조방법
KR10-2010-0085584 2010-09-01
PCT/KR2011/003119 WO2012030046A1 (ko) 2010-09-01 2011-04-27 태양광 발전장치 및 이의 제조방법

Publications (1)

Publication Number Publication Date
CN103069576A true CN103069576A (zh) 2013-04-24

Family

ID=45773085

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800397400A Pending CN103069576A (zh) 2010-09-01 2011-04-27 太阳能发电装置及其制造方法

Country Status (6)

Country Link
US (1) US20130019943A1 (enExample)
EP (1) EP2538453A1 (enExample)
JP (1) JP2013536996A (enExample)
KR (1) KR101172178B1 (enExample)
CN (1) CN103069576A (enExample)
WO (1) WO2012030046A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120529652A (zh) * 2025-05-21 2025-08-22 福莱特玻璃集团股份有限公司 一种薄膜太阳能电池及其制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BR112014027376A2 (pt) * 2012-05-03 2017-06-27 Nexcis gravura por laser de um empilhamento de camadas finas para uma conexão de célula fotovoltaica
US20150153622A1 (en) 2013-12-03 2015-06-04 Sage Electrochromics, Inc. Methods for producing lower electrical isolation in electrochromic films

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274447A (ja) * 2000-03-23 2001-10-05 Kanegafuchi Chem Ind Co Ltd 集積型薄膜太陽電池の製造方法
US20090165840A1 (en) * 2007-12-27 2009-07-02 Sanyo Electric Co., Ltd. Solar cell module and method of manufacturing the same
KR20100030944A (ko) * 2008-09-11 2010-03-19 엘지이노텍 주식회사 태양전지의 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041266A (ja) * 1983-08-15 1985-03-04 Semiconductor Energy Lab Co Ltd 半導体装置作製方法およびその作製用装置
JP4473995B2 (ja) * 1999-11-29 2010-06-02 キヤノン株式会社 半導体素子の製造方法
DE102008060404A1 (de) * 2008-07-30 2010-02-11 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Einseitig kontaktiertes Dünnschicht-Solarmodul mit einer inneren Kontaktschicht
US20100288335A1 (en) * 2009-10-02 2010-11-18 Sunlight Photonics Inc. Degradation-resistant photovoltaic devices
US8241940B2 (en) * 2010-02-12 2012-08-14 Solexel, Inc. Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274447A (ja) * 2000-03-23 2001-10-05 Kanegafuchi Chem Ind Co Ltd 集積型薄膜太陽電池の製造方法
US20090165840A1 (en) * 2007-12-27 2009-07-02 Sanyo Electric Co., Ltd. Solar cell module and method of manufacturing the same
KR20100030944A (ko) * 2008-09-11 2010-03-19 엘지이노텍 주식회사 태양전지의 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN120529652A (zh) * 2025-05-21 2025-08-22 福莱特玻璃集团股份有限公司 一种薄膜太阳能电池及其制备方法

Also Published As

Publication number Publication date
US20130019943A1 (en) 2013-01-24
WO2012030046A1 (ko) 2012-03-08
EP2538453A1 (en) 2012-12-26
KR101172178B1 (ko) 2012-08-07
KR20120022231A (ko) 2012-03-12
JP2013536996A (ja) 2013-09-26

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Application publication date: 20130424