WO2012030046A1 - 태양광 발전장치 및 이의 제조방법 - Google Patents

태양광 발전장치 및 이의 제조방법 Download PDF

Info

Publication number
WO2012030046A1
WO2012030046A1 PCT/KR2011/003119 KR2011003119W WO2012030046A1 WO 2012030046 A1 WO2012030046 A1 WO 2012030046A1 KR 2011003119 W KR2011003119 W KR 2011003119W WO 2012030046 A1 WO2012030046 A1 WO 2012030046A1
Authority
WO
WIPO (PCT)
Prior art keywords
layer
light absorbing
holes
hole
absorbing layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/KR2011/003119
Other languages
English (en)
French (fr)
Korean (ko)
Inventor
이진우
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Innotek Co Ltd
Original Assignee
LG Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Innotek Co Ltd filed Critical LG Innotek Co Ltd
Priority to CN2011800397400A priority Critical patent/CN103069576A/zh
Priority to US13/639,683 priority patent/US20130019943A1/en
Priority to JP2013526987A priority patent/JP2013536996A/ja
Priority to EP11822021A priority patent/EP2538453A1/en
Publication of WO2012030046A1 publication Critical patent/WO2012030046A1/ko
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • Embodiment relates to a photovoltaic device and a method of manufacturing the same.
  • a CIGS solar photovoltaic device which is a pn heterojunction device having a substrate structure including a glass substrate, a metal back electrode layer, a p-type CIGS-based light absorbing layer, a high resistance buffer layer, an n-type window layer, and the like, is widely used.
  • the embodiment is to provide a photovoltaic device and a method of manufacturing the same, which prevents a short circuit and has improved photoelectric conversion efficiency.
  • Photovoltaic device includes a substrate; A back electrode layer disposed on the substrate; A light absorbing layer disposed on the back electrode layer; And a window layer disposed on the light absorbing layer, wherein a third through hole penetrating the entirety of the window layer and a part of the light absorbing layer is formed.
  • Photovoltaic device includes a substrate; A back electrode layer disposed on the substrate; A light absorbing layer disposed on the back electrode layer; A window layer disposed on the light absorbing layer and having a third through hole formed therein; And a dummy protective part interposed between the third through hole and the back electrode layer.
  • a method of manufacturing a solar cell apparatus includes forming a back electrode layer on a substrate; Forming a light absorbing layer on the back electrode layer; Forming a window layer on the light absorbing layer; And forming a third through hole penetrating the entire window layer and a part of the light absorbing layer.
  • the solar cell apparatus according to the embodiment penetrates a part of the light absorbing layer to form a third through hole. Accordingly, the third through hole is formed without exposing the back electrode layer.
  • the solar cell apparatus can prevent the efficiency decrease due to the damage of the back electrode layer.
  • the third through hole may be formed by an etching process.
  • the third through hole may be formed by a wet etching process. Accordingly, foreign matters generated in the process of forming the third through hole may be easily removed by the etchant. Accordingly, foreign matters and the like do not remain inside the third through hole, and shorts due to the foreign matters can be prevented.
  • the solar cell apparatus can prevent a short circuit and reduce the defective rate.
  • FIG. 1 is a plan view illustrating a solar cell apparatus according to an embodiment.
  • FIG. 2 is a cross-sectional view illustrating a cross section taken along line AA ′ in FIG. 1.
  • 3 to 7 are views illustrating a process of manufacturing the solar cell apparatus according to the embodiment.
  • each substrate, layer, film, or electrode is described as being formed “on” or “under” of each substrate, layer, film, or electrode, etc.
  • "On” and “under” include both “directly” or “indirectly” formed through other components.
  • the criteria for the top or bottom of each component will be described with reference to the drawings. The size of each component in the drawings may be exaggerated for description, and does not mean a size that is actually applied.
  • FIG. 1 is a plan view illustrating a solar cell apparatus according to an embodiment.
  • FIG. 2 is a cross-sectional view taken along the line A-A 'of FIG. 1.
  • the photovoltaic device includes a support substrate 100, a back electrode layer 200, a light absorbing layer 300, a buffer layer 400, a high resistance buffer layer 500, a window layer 600, and the like. It includes a plurality of connections 700.
  • the support substrate 100 has a plate shape, and the back electrode layer 200, the light absorbing layer 300, the buffer layer 400, the high resistance buffer layer 500, the window layer 600, and the connection portion ( 700).
  • the support substrate 100 may be an insulator.
  • the support substrate 100 may be a glass substrate, a plastic substrate, or a metal substrate.
  • the support substrate 100 may be a soda lime glass substrate.
  • the support substrate 100 may be transparent.
  • the support substrate 100 may be rigid or flexible.
  • the back electrode layer 200 is disposed on the support substrate 100.
  • the back electrode layer 200 is a conductive layer.
  • Examples of the material used for the back electrode layer 200 include a metal such as molybdenum.
  • the back electrode layer 200 may include two or more layers.
  • each of the layers may be formed of the same metal, or may be formed of different metals.
  • First through holes TH1 are formed in the back electrode layer 200.
  • the first through holes TH1 are open regions that expose the top surface of the support substrate 100.
  • the first through holes TH1 may have a shape extending in a first direction when viewed in a plan view.
  • the width of the first through holes TH1 may be about 80 ⁇ m to 200 ⁇ m.
  • the back electrode layer 200 is divided into a plurality of back electrodes by the first through holes TH1. That is, the back electrodes are defined by the first through holes TH1.
  • the back electrodes are spaced apart from each other by the first through holes TH1.
  • the back electrodes are arranged in a stripe shape.
  • the back electrodes may be arranged in a matrix form.
  • the first through holes TH1 may have a lattice shape when viewed in a plan view.
  • the light absorbing layer 300 is disposed on the back electrode layer 200.
  • the material included in the light absorbing layer 300 is filled in the first through holes TH1.
  • the light absorbing layer 300 includes a group I-III-VI compound.
  • the light absorbing layer 300 may be formed of a copper-indium-gallium-selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) crystal structure, copper-indium-selenide-based, or copper-gallium-selenide It may have a system crystal structure.
  • the energy band gap of the light absorbing layer 300 may be about 1 eV to 1.8 eV.
  • the buffer layer 400 is disposed on the light absorbing layer 300.
  • the buffer layer 400 includes cadmium sulfide (CdS), and an energy band gap of the buffer layer 400 is about 2.2 eV to 2.4 eV.
  • the high resistance buffer layer 500 is disposed on the buffer layer 400.
  • the high resistance buffer layer 500 includes zinc oxide (i-ZnO) that is not doped with impurities.
  • the energy bandgap of the high resistance buffer layer 500 is about 3.1 eV to 3.3 eV.
  • Second through holes TH2 are formed in the light absorbing layer 300, the buffer layer 400, and the high resistance buffer layer 500.
  • the second through holes TH2 pass through the light absorbing layer 300.
  • the second through holes TH2 are open regions exposing the top surface of the back electrode layer 200.
  • the second through holes TH2 are formed adjacent to the first through holes TH1. That is, some of the second through holes TH2 are formed next to the first through holes TH1 when viewed in a plan view.
  • the second through holes TH2 have a shape extending in the first direction.
  • the width of the second through holes TH2 may be about 80 ⁇ m to about 200 ⁇ m.
  • the light absorbing layer 300 defines a plurality of light absorbing portions by the second through holes TH2. That is, the light absorbing layer 300 is divided into the light absorbing portions by the second through holes TH2.
  • the buffer layer 400 is defined as a plurality of buffers by the second through holes TH2. That is, the buffer layer 400 is divided into the buffers by the second through holes TH2.
  • the high resistance buffer layer 500 is defined as a plurality of high resistance buffers by the second through holes TH2. That is, the high resistance buffer layer 500 is divided into the high resistance buffers by the second through holes TH2.
  • the window layer 600 is disposed on the high resistance buffer layer 500.
  • the window layer 600 is transparent and is a conductive layer.
  • the resistance of the window layer 600 is higher than the resistance of the back electrode layer 200.
  • the window layer 600 includes an oxide.
  • an example of a material used as the window layer 600 may include aluminum doped zinc oxide (AZO) or gallium doped zinc oxide (GZO).
  • Third through holes TH3 are formed in the light absorbing layer 300, the buffer layer 400, the high resistance buffer layer 500, and the window layer 600.
  • the third through holes TH3 penetrate a portion of the light absorbing layer 300, an entirety of the buffer layer 400, an entirety of the high resistance buffer layer 500, and an entirety of the window layer 600.
  • the third through holes TH3 penetrate a part of the light absorbing layer 300, a plurality of dummy protective parts 301 are formed in the light absorbing layer 300.
  • the bottom surface 602 of the third through holes TH3 is interposed between the top surface and the bottom surface of the light absorbing layer 300.
  • the dummy protection parts 301 may be integrally formed with the light absorbing layer.
  • the dummy protection parts 301 may correspond to the third through holes TH3, respectively. Accordingly, top surfaces of the dummy protective parts 301 may coincide with bottom surfaces of the third through holes TH3. Top surfaces of the dummy protection parts 301 are positioned between the top surface and the bottom surface of the light absorbing layer 300.
  • the dummy protection parts 301 are integrally formed with the light absorbing layer 300.
  • the dummy protection parts 301 may be part of the light absorbing layer 300.
  • the dummy protection parts 301 are interposed between the third through holes TH3 and the back electrode layer 200.
  • the dummy protection parts 301 cover the top surface of the back electrode layer 200. Accordingly, the dummy protection parts 301 do not expose the top surface of the back electrode layer 200.
  • the third through holes TH3 are formed at positions adjacent to the second through holes TH2.
  • the third through holes TH3 are disposed next to the second through holes TH2. That is, when viewed in a plan view, the third through holes TH3 are arranged side by side next to the second through holes TH2.
  • the third through holes TH3 may have a shape extending in the first direction.
  • the inner side surface 601 of the third through holes TH3 may be inclined with respect to the upper surface of the window layer 600.
  • the inner surface 601 of the third through holes TH3 may be inclined at an angle of about 3 ° to about 10 ° with respect to the direction perpendicular to the upper surface of the window layer 600.
  • the third through holes TH3 pass through the window layer 600.
  • the third through holes TH3 pass through the buffer layer 400 and the high resistance buffer layer 500.
  • the third through holes TH3 partially pass through the light absorbing layer 300.
  • the bottom surface 602 of the third through holes TH3 is disposed inside the light absorbing layer 300. That is, the bottom surface 602 of the third through holes TH3 is disposed between the top surface and the bottom surface of the light absorbing layer 300.
  • the top surface of the back electrode layer 200 is not exposed by the third through holes TH3. That is, the back electrode layer 200 may be protected in the light absorbing layer 300. Since the back electrode layer 200 is not exposed to the outside, the back electrode layer 200 may be prevented from being damaged by an external physical and chemical impact.
  • the window layer 600 is divided into a plurality of windows by the third through holes TH3. That is, the windows are defined by the third through holes TH3.
  • the windows have a shape corresponding to the back electrodes. That is, the windows are arranged in a stripe shape. Alternatively, the windows may be arranged in a matrix form.
  • a plurality of cells C1, C2... are defined by the third through holes TH3.
  • the cells C1, C2... are defined by the second through holes TH2 and the third through holes TH3. That is, the photovoltaic device according to the embodiment is divided into the cells C1, C2... By the second through holes TH2 and the third through holes TH3.
  • the cells C1, C2... Are connected to each other in a second direction crossing the first direction. That is, current may flow in the second direction through the cells C1, C2...
  • the solar cell apparatus can prevent the short generated between the windows.
  • connection parts 700 are disposed inside the second through holes TH2.
  • the connection parts 700 extend downward from the window layer 600 and are connected to the back electrode layer 200.
  • the connection parts 700 extend from the window of the first cell C1 and are connected to the back electrode of the second cell C2.
  • connection parts 700 connect adjacent cells to each other.
  • the connection parts 700 connect the windows and the back electrodes included in the cells C1 and C2... Adjacent to each other.
  • connection part 700 is formed integrally with the window layer 600. That is, the material used as the connection part 700 is the same as the material used as the window layer 600.
  • the photovoltaic device according to the embodiment penetrates through portions of the light absorbing layer 300 to form the third through holes TH3. Accordingly, the third through holes TH3 are formed without exposing the back electrode layer 200.
  • the photovoltaic device according to the embodiment can prevent the efficiency decrease due to the damage of the back electrode layer 200.
  • the solar cell apparatus according to the embodiment may have improved photoelectric conversion efficiency.
  • the third through holes TH3 penetrate to a part of the light absorbing layer 300, shorting between the windows is prevented.
  • 3 to 8 are cross-sectional views illustrating a method of manufacturing the solar cell apparatus according to the embodiment.
  • the present manufacturing method refer to the description of the photovoltaic device described above.
  • the description of the photovoltaic device described above may be essentially combined with the description of the present manufacturing method.
  • the back electrode layer 200 is formed on the support substrate 100, and the back electrode layer 200 is patterned to form first through holes TH1. Accordingly, a plurality of back electrodes are formed on the support substrate 100.
  • the back electrode layer 200 is patterned by a laser.
  • Examples of the material used as the back electrode layer 200 include molybdenum and the like.
  • the back electrode layer 200 may be formed of two or more layers under different process conditions.
  • the first through holes TH1 may expose an upper surface of the support substrate 100 and have a width of about 80 ⁇ m to about 200 ⁇ m.
  • an additional layer such as a diffusion barrier may be interposed between the support substrate 100 and the back electrode layer 200, wherein the first through holes TH1 expose the top surface of the additional layer.
  • a light absorbing layer 300, a buffer layer 400, and a high resistance buffer layer 500 are formed on the back electrode layer 200.
  • the light absorbing layer 300 may be formed by a sputtering process or an evaporation method.
  • the light absorbing layer 300 For example, copper, indium, gallium, selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) while evaporating copper, indium, gallium, and selenium simultaneously or separately to form the light absorbing layer 300.
  • the method of forming the light absorbing layer 300 and the method of forming the metal precursor film by the selenization process are widely used.
  • a metal precursor film is formed on the back electrode 200 by a sputtering process using a copper target, an indium target, and a gallium target.
  • the metal precursor film is formed of a copper-indium-gallium-selenide-based (Cu (In, Ga) Se 2 ; CIGS-based) light absorbing layer 300 by a selenization process.
  • the sputtering process and the selenization process using the copper target, the indium target, and the gallium target may be simultaneously performed.
  • the CIS-based or CIG-based light absorbing layer 300 may be formed by using only a copper target and an indium target, or by a sputtering process and a selenization process using a copper target and a gallium target.
  • cadmium sulfide is deposited by a sputtering process or a chemical bath depositon (CBD) or the like, and the buffer layer 400 is formed.
  • zinc oxide is deposited on the buffer layer 400 by a sputtering process, and the high resistance buffer layer 500 is formed.
  • the buffer layer 400 and the high resistance buffer layer 500 are deposited to a low thickness.
  • the thickness of the buffer layer 400 and the high resistance buffer layer 500 is about 1 nm to about 80 nm.
  • the second through holes TH2 may be formed by a mechanical device such as a tip or a laser device.
  • the light absorbing layer 300 and the buffer layer 400 may be patterned by a tip having a width of about 40 ⁇ m to about 180 ⁇ m.
  • the width of the second through holes TH2 may be about 100 ⁇ m to about 200 ⁇ m.
  • the second through holes TH2 are formed to expose a portion of the top surface of the back electrode layer 200.
  • a transparent conductive layer 600a is formed on the light absorbing layer 300 and inside the second through holes TH2. That is, the transparent conductive layer 600a is formed by depositing a transparent conductive material on the high resistance buffer layer 500 and inside the second through holes TH2.
  • the transparent conductive layer 600a may be formed by depositing zinc oxide doped with aluminum by a sputtering process on an upper surface of the high resistance buffer layer 500 and inside the second through holes TH2. have.
  • the transparent conductive material is filled in the second through holes TH2, and the transparent conductive layer 600a is in direct contact with the back electrode layer 200.
  • a mask pattern 800 is formed on the transparent conductive layer 600a.
  • the mask pattern 800 includes exposure holes 801 exposing the top surface of the transparent conductive layer 600a.
  • the exposure holes 801 are formed adjacent to the second through holes TH2, respectively.
  • the exposure holes 801 extend in a first direction.
  • Examples of the material used as the mask pattern 800 may include silicon oxide or silicon nitride.
  • the transparent conductive layer 600a is etched by a wet etching method. Accordingly, third through holes TH3 penetrating the transparent conductive layer 600a, the high resistance buffer layer 500, and the buffer layer 400 are formed. The third through holes TH3 penetrate a part of the light absorbing layer 300.
  • the etchant used to form the third through holes TH3 may be mentioned. Since the third through holes TH3 are etched by a wet etching method, the inner surface 601 of the third through holes TH3 may be inclined.
  • the third through holes TH3 may be formed by a laser.
  • the laser is irradiated based on the upper portion of the light absorbing layer 300. That is, the energy of the laser may be irradiated to concentrate on the light absorbing layer 300. Accordingly, the laser may form the third through holes TH3 to penetrate a portion of the light absorbing layer 300.
  • the window layer 600 including the third through holes TH3 is formed by the wet etching method or the laser patterning. That is, the window layer 600 is formed by dividing the transparent conductive layer 600a into a plurality of windows by the third through holes TH3.
  • a plurality of windows and a plurality of cells C1, C2... are defined in the window layer 600 by the third through holes TH3.
  • the width of the third through holes TH3 may be about 80 ⁇ m to about 200 ⁇ m.
  • the third through holes TH3 are formed by an etching process, foreign substances generated in the process of forming the third through holes TH3 may be easily removed.
  • the foreign matter is washed by the etchant, and the foreign matter remaining inside the third through holes TH3 can be easily removed.
  • the third through holes TH3 are formed by an etching process, the inner surface 601 of the third through holes TH3 is smoothly formed. That is, the inner surface 601 of the third through holes TH3 is smoother when formed by the etching process than when formed by the mechanical scribing process or the like.
  • shorts generated in the window layer 600 may be prevented. That is, the short between the windows may be prevented from degrading the performance of the solar cell panel according to the embodiment.
  • the width of the third through holes TH3 may be narrowed. That is, compared with the case formed by the mechanical scribing process, even if the width of the third through holes TH3 formed by the etching process is narrowed, the windows cannot be physically and / or electrically separated sufficiently. Can be.
  • the effective area of the solar cell panel according to the embodiment that is, the area actually generated may be increased. Therefore, the solar cell panel according to the embodiment may prevent the short and may have an improved photoelectric conversion efficiency.
  • Photovoltaic device and its manufacturing method according to the embodiment can be used in the field of photovoltaic power generation.

Landscapes

  • Photovoltaic Devices (AREA)
PCT/KR2011/003119 2010-09-01 2011-04-27 태양광 발전장치 및 이의 제조방법 Ceased WO2012030046A1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2011800397400A CN103069576A (zh) 2010-09-01 2011-04-27 太阳能发电装置及其制造方法
US13/639,683 US20130019943A1 (en) 2010-09-01 2011-04-27 Solar power generating device, and method for manufacturing same
JP2013526987A JP2013536996A (ja) 2010-09-01 2011-04-27 太陽光発電装置及びその製造方法
EP11822021A EP2538453A1 (en) 2010-09-01 2011-04-27 Solar power generating device, and method for manufacturing same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020100085584A KR101172178B1 (ko) 2010-09-01 2010-09-01 태양광 발전장치 및 이의 제조방법
KR10-2010-0085584 2010-09-01

Publications (1)

Publication Number Publication Date
WO2012030046A1 true WO2012030046A1 (ko) 2012-03-08

Family

ID=45773085

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2011/003119 Ceased WO2012030046A1 (ko) 2010-09-01 2011-04-27 태양광 발전장치 및 이의 제조방법

Country Status (6)

Country Link
US (1) US20130019943A1 (enExample)
EP (1) EP2538453A1 (enExample)
JP (1) JP2013536996A (enExample)
KR (1) KR101172178B1 (enExample)
CN (1) CN103069576A (enExample)
WO (1) WO2012030046A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015516110A (ja) * 2012-05-03 2015-06-04 ネクシスＮｅｘｃｉｓ 光電池セルの接続のための薄層スタックのレーザエッチング

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150153622A1 (en) 2013-12-03 2015-06-04 Sage Electrochromics, Inc. Methods for producing lower electrical isolation in electrochromic films
CN120529652A (zh) * 2025-05-21 2025-08-22 福莱特玻璃集团股份有限公司 一种薄膜太阳能电池及其制备方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274447A (ja) * 2000-03-23 2001-10-05 Kanegafuchi Chem Ind Co Ltd 集積型薄膜太陽電池の製造方法
JP2009158864A (ja) * 2007-12-27 2009-07-16 Sanyo Electric Co Ltd 太陽電池モジュール及びその製造方法
KR20100030944A (ko) * 2008-09-11 2010-03-19 엘지이노텍 주식회사 태양전지의 제조방법

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6041266A (ja) * 1983-08-15 1985-03-04 Semiconductor Energy Lab Co Ltd 半導体装置作製方法およびその作製用装置
JP4473995B2 (ja) * 1999-11-29 2010-06-02 キヤノン株式会社 半導体素子の製造方法
DE102008060404A1 (de) * 2008-07-30 2010-02-11 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Einseitig kontaktiertes Dünnschicht-Solarmodul mit einer inneren Kontaktschicht
US20100288335A1 (en) * 2009-10-02 2010-11-18 Sunlight Photonics Inc. Degradation-resistant photovoltaic devices
US8241940B2 (en) * 2010-02-12 2012-08-14 Solexel, Inc. Double-sided reusable template for fabrication of semiconductor substrates for photovoltaic cell and microelectronics device manufacturing

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001274447A (ja) * 2000-03-23 2001-10-05 Kanegafuchi Chem Ind Co Ltd 集積型薄膜太陽電池の製造方法
JP2009158864A (ja) * 2007-12-27 2009-07-16 Sanyo Electric Co Ltd 太陽電池モジュール及びその製造方法
KR20100030944A (ko) * 2008-09-11 2010-03-19 엘지이노텍 주식회사 태양전지의 제조방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015516110A (ja) * 2012-05-03 2015-06-04 ネクシスＮｅｘｃｉｓ 光電池セルの接続のための薄層スタックのレーザエッチング

Also Published As

Publication number Publication date
US20130019943A1 (en) 2013-01-24
CN103069576A (zh) 2013-04-24
EP2538453A1 (en) 2012-12-26
KR101172178B1 (ko) 2012-08-07
KR20120022231A (ko) 2012-03-12
JP2013536996A (ja) 2013-09-26

Similar Documents

Publication Publication Date Title
WO2011040781A2 (ko) 태양광 발전장치 및 이의 제조방법
WO2011053077A2 (ko) 태양전지 및 이의 제조방법
WO2011119001A2 (ko) 태양광 발전장치 및 이의 제조방법
WO2011071227A1 (en) Solar cell module
WO2011002230A2 (ko) 태양전지 및 이의 제조방법
WO2011055946A2 (ko) 태양전지 및 이의 제조방법
WO2015041470A1 (ko) 태양전지
WO2012033274A1 (ko) 태양광 발전장치 및 이의 제조방법
WO2011040782A2 (ko) 태양광 발전장치 및 이의 제조방법
WO2011043610A2 (ko) 태양광 발전장치 및 이의 제조방법
WO2011040778A2 (ko) 태양광 발전장치 및 이의 제조방법
WO2015056934A1 (ko) 태양전지 모듈
WO2011040780A2 (ko) 태양광 발전장치 및 이의 제조방법
WO2011002211A2 (ko) 태양전지 및 이의 제조방법
WO2017043805A1 (ko) 박막형 태양전지 및 그 제조 방법
WO2015046845A1 (ko) 태양전지
WO2014021617A1 (en) Solar cell apparatus and method of fabricating the same
WO2012046934A1 (ko) 태양광 발전장치 및 이의 제조방법
WO2012015286A2 (ko) 태양광 발전장치 및 이의 제조방법
WO2013147517A1 (en) Solar cell and method of fabricating the same
WO2012015150A1 (ko) 태양광 발전장치 및 이의 제조방법
WO2012057490A2 (en) Solar cell apparatus and method for manufacturing the same
WO2011071226A1 (en) Solar cell module
WO2012036364A1 (ko) 태양광 발전장치 및 이의 제조방법
WO2011083995A2 (ko) 태양광 발전장치 및 이의 제조방법

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 201180039740.0

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11822021

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2011822021

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2013526987

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 13639683

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE