JP2013527605A - オプトエレクトロニクスデバイスおよびオプトエレクトロニクスデバイスの製造方法 - Google Patents
オプトエレクトロニクスデバイスおよびオプトエレクトロニクスデバイスの製造方法 Download PDFInfo
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- 230000005693 optoelectronics Effects 0.000 title claims abstract description 109
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 239000002245 particle Substances 0.000 claims abstract description 71
- 239000004065 semiconductor Substances 0.000 claims abstract description 62
- 239000000891 luminescent agent Substances 0.000 claims description 15
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 14
- 229920001296 polysiloxane Polymers 0.000 claims description 7
- 239000004408 titanium dioxide Substances 0.000 claims description 7
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 claims description 4
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 claims description 4
- CJDPJFRMHVXWPT-UHFFFAOYSA-N barium sulfide Chemical compound [S-2].[Ba+2] CJDPJFRMHVXWPT-UHFFFAOYSA-N 0.000 claims description 3
- ARSLNKYOPNUFFY-UHFFFAOYSA-L barium sulfite Chemical compound [Ba+2].[O-]S([O-])=O ARSLNKYOPNUFFY-UHFFFAOYSA-L 0.000 claims description 3
- 239000011159 matrix material Substances 0.000 claims description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims 2
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 229910003440 dysprosium oxide Inorganic materials 0.000 claims 1
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(iii) oxide Chemical compound O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 claims 1
- 229910052746 lanthanum Inorganic materials 0.000 claims 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims 1
- 230000005855 radiation Effects 0.000 description 17
- 238000004088 simulation Methods 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000012925 reference material Substances 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003856 thermoforming Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
- G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
- G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
- G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
- G02B6/0073—Light emitting diode [LED]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
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- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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- H—ELECTRICITY
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
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- Optics & Photonics (AREA)
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Abstract
Description
・請求項1に記載されているオプトエレクトロニクスデバイス
・請求項15に記載されているオプトエレクトロニクスデバイスの製造方法ないしは
・請求項13に記載されている照明装置によって解決される。
種々の実施形態は、担体と少なくとも1つの半導体チップとを備えたオプトエレクトロニクスデバイスを有している。この半導体チップは担体上に配置されており、一次ビームを放射する。さらにこのデバイスは、半導体チップを少なくとも部分的に包囲しており、かつ少なくとも部分的に透明な担体を有している。この媒体は、担体上方の高さと、媒体に沿った幅を有している。この媒体内には、一次ビームと相互作用する粒子が入れられている。この媒体は、1を超える、高さ対幅の比(アスペクト比)を有している。これによって、電磁ビームが有利な方向、すなわち担体に対して水平に偏向されることが保証される。
Claims (15)
- オプトエレクトロニクスデバイス(1)であって、
・担体(2)と、
・少なくとも1つの半導体チップ(3)と、
・少なくとも部分的に透明な媒体(7)と、
・当該媒体(7)内に入れられている粒子(10、11)とを有しており、
前記半導体チップ(3)は、前記担体(2)上に配置されており、一次ビーム(6)を放射し、
前記媒体(7)は、前記半導体チップ(3)を少なくとも部分的に包囲しており、前記担体(2)上方の高さ(8)と前記担体(2)に沿った幅(9)を有しており、
前記粒子(10、11)は、前記一次ビーム(6)と相互作用し、
前記媒体(7)の前記高さ(8)と前記幅(9)の比は1よりも大きい、
ことを特徴とするオプトエレクトロニクスデバイス。 - 前記粒子(10、11)は均一に、前記媒体(7)内に分散されている、請求項1記載のオプトエレクトロニクスデバイス。
- 前記粒子(10、11)は発光剤粒子(10)を有しており、当該発光剤粒子は、前記一次ビーム(6)を吸収して、二次ビーム(14)の第1の成分(14a)を放出するように配置されている、請求項1または2記載のオプトエレクトロニクスデバイス。
- 殊に蛍光材料、殊にランタンがドーピングされた酸化イットリウム(Y2O3−La2O3)、イットリウムアルミニウムガーネット(Y3Al5O12)、酸化ジスプロシウム(Dy2O3)、酸化窒化アルミニウム(Al23O27N5)または窒化アルミニウム(AlN)から成る前記発光剤粒子(10)が、5〜15重量%の濃度で存在している、請求項3記載のオプトエレクトロニクスデバイス。
- 前記粒子(10、11)は散乱粒子(11)を含んでおり、当該散乱粒子は、前記一次ビームを散乱させるように配置されており、二次ビーム(14)のために第2の成分(14b)を与える、請求項1から4までのいずれか1項記載のオプトエレクトロニクスデバイス。
- 前記散乱粒子(11)は、殊にバリウム硫化物、バリウム亜硫酸塩、バリウム硫酸塩またはチタン二酸化物を2〜10重量%の濃度で有している、請求項5記載のオプトエレクトロニクスデバイス。
- 前記媒体(7)の高さ(8)は、前記担体(2)に沿った半導体チップ(3)のチップ幅(13)の約1〜約3倍である、請求項1から6までのいずれか1項記載のオプトエレクトロニクスデバイス。
- 反射層(12)が少なくとも部分的に前記媒体(7)の面に設けられており、前記媒体(7)の面は、前記半導体チップ(3)の方を向いている、請求項1から7までのいずれか1項記載のオプトエレクトロニクスデバイス。
- 部分反射層(15)が、少なくとも部分的に、前記半導体チップ(3)とは反対側の、前記媒体(7)の面に設けられている、請求項1から8までのいずれか1項記載のオプトエレクトロニクスデバイス。
- 前記部分反射層(15)は、前記半導体チップ(3)とは反対側の、前記媒体(7)の面に、前記媒体(7)と直接的に接触して配置されている、請求項9記載のオプトエレクトロニクスデバイス。
- 前記部分反射層(15)と前記媒体(7)との間にエアギャップ(16)が設けられており、
当該部分反射層は、前記媒体(7)の、前記半導体チップ(3)とは反対側の面に設けられている、請求項9記載のオプトエレクトロニクスデバイス。 - 前記反射層(12)および/または前記部分反射層(15)はチタン二酸化物粒子を含有しているシリコーンを含んでおり、
前記反射層(12)は前記媒体(7)の、前記半導体チップ(3)の方を向いている面に設けられており、前記部分反射層(15)は前記媒体(7)の、前記半導体チップ(3)とは反対側の面に設けられている、請求項8から11記載のオプトエレクトロニクスデバイス。 - 請求項1から12までのいずれか1項に記載されている少なくとも1つのオプトエレクトロニクスデバイス(1)を備え、前記オプトエレクトロニクスデバイス(1)は導光体(17)に光学的に結合されている、照明装置(100)。
- 前記オプトエレクトロニクスデバイス(1)と、前記導光体(17)との間にエアギャップ(16)が設けられている、請求項13記載の照明装置。
- オプトエレクトロニクスデバイス(1)を製造する方法であって、
・半導体チップ(3)を担体(2)上に準備するステップと;
・粒子(10、11)を、透明なマトリクス材料、殊に透明なシリコーンから成る媒体(7)に入れるステップと、
・前記媒体(7)を型に注ぐステップと、
・前記媒体(7)を熱で硬化させるステップと、
・前記媒体(7)を前記半導体チップ(3)上に被着させるステップとを有しており、これによって前記担体(2)上方の前記媒体(7)の高さ(8)と、前記担体(2)に沿った前記媒体(7)の幅(9)の比は1よりも大きい、
ことを特徴とする、オプトエレクトロニクスデバイスを製造する方法。
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DE102010028246.4 | 2010-04-27 | ||
DE102010028246A DE102010028246A1 (de) | 2010-04-27 | 2010-04-27 | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
PCT/EP2011/054680 WO2011134727A1 (de) | 2010-04-27 | 2011-03-28 | Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements |
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2017504220A (ja) * | 2013-11-08 | 2017-02-02 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツングOsram Opto Semiconductors GmbH | オプトエレクトロニクス部品、オプトエレクトロニクス装置、光学要素の製造方法、およびオプトエレクトロニクス部品の製造方法 |
JP2018078188A (ja) * | 2016-11-09 | 2018-05-17 | 日亜化学工業株式会社 | 発光装置 |
JP2019175846A (ja) * | 2018-03-26 | 2019-10-10 | 日亜化学工業株式会社 | 発光モジュールの製造方法及び発光モジュール |
JP2019175847A (ja) * | 2018-03-26 | 2019-10-10 | 日亜化学工業株式会社 | 発光モジュール |
JP2020202399A (ja) * | 2020-09-10 | 2020-12-17 | 日亜化学工業株式会社 | 発光装置 |
JP2021027129A (ja) * | 2019-08-02 | 2021-02-22 | 日亜化学工業株式会社 | 発光装置 |
US11073725B2 (en) | 2018-03-26 | 2021-07-27 | Nichia Corporation | Method of manufacturing light emitting module, and light emitting module |
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DE102010028246A1 (de) * | 2010-04-27 | 2011-10-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements |
US8492746B2 (en) * | 2011-09-12 | 2013-07-23 | SemiLEDs Optoelectronics Co., Ltd. | Light emitting diode (LED) dice having wavelength conversion layers |
DE102012102119A1 (de) | 2012-03-13 | 2013-09-19 | Osram Opto Semiconductors Gmbh | Flächenlichtquelle |
DE102012102122A1 (de) * | 2012-03-13 | 2013-09-19 | Osram Opto Semiconductors Gmbh | Flächenlichtquelle |
US9923132B2 (en) | 2013-05-24 | 2018-03-20 | Cree, Inc. | Solid state lighting component package with conformal reflective coating |
DE102015121074A1 (de) * | 2015-12-03 | 2017-06-08 | Osram Opto Semiconductors Gmbh | Halbleiterbauteil mit lichtleiterschicht |
DE102016118030A1 (de) * | 2016-09-23 | 2018-03-29 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes halbleiterbauteil |
DE102017101729A1 (de) * | 2017-01-30 | 2018-08-02 | Osram Opto Semiconductors Gmbh | Strahlungsemittierende Vorrichtung |
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Also Published As
Publication number | Publication date |
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KR20130079410A (ko) | 2013-07-10 |
CN102870239A (zh) | 2013-01-09 |
EP2519985A1 (de) | 2012-11-07 |
CN102870239B (zh) | 2016-01-20 |
WO2011134727A1 (de) | 2011-11-03 |
DE102010028246A1 (de) | 2011-10-27 |
US20130039617A1 (en) | 2013-02-14 |
US8965148B2 (en) | 2015-02-24 |
JP5665969B2 (ja) | 2015-02-04 |
EP2519985B1 (de) | 2018-05-02 |
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