JP2013526005A - 基板上に形成される金属接点の処理のための方法 - Google Patents
基板上に形成される金属接点の処理のための方法 Download PDFInfo
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 124
- 239000002184 metal Substances 0.000 title claims abstract description 124
- 239000000758 substrate Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 37
- 238000012545 processing Methods 0.000 title description 3
- 239000002904 solvent Substances 0.000 claims abstract description 16
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 239000000843 powder Substances 0.000 claims abstract description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 6
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- -1 silver-aluminum Chemical compound 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 2
- 238000001704 evaporation Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 11
- 239000002245 particle Substances 0.000 description 10
- 238000013532 laser treatment Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 8
- 239000002344 surface layer Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000002923 metal particle Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical group N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000002522 swelling effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
- H05K2203/107—Using laser light
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
- H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
- H05K3/1291—Firing or sintering at relative high temperatures for patterns on inorganic boards, e.g. co-firing of circuits on green ceramic sheets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Life Sciences & Earth Sciences (AREA)
- Electrodes Of Semiconductors (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Powder Metallurgy (AREA)
- Photovoltaic Devices (AREA)
- Manufacturing Of Electric Cables (AREA)
Abstract
Description
(a)金属粉末を溶剤と混合することから形成されるペーストの形態の金属パターンを堆積させるステップと、
(b)溶剤を蒸発させるために、このようにステップ(a)において形成された集合体を加熱するステップと、
(c)金属パターンと基板との間に金属接点を形成するためにアニールを実行するステップとを含み、
(d)金属接点が0.5J/cm2〜15J/cm2のエネルギー密度を有するレーザを使用して加熱されるステップをさらに含むことを特徴とする、方法を提供する。
−ステップ(a)はスクリーン印刷のステップである;
−金属パターンは少なくとも1μm厚である;
−金属接点はメッシュの形態をとる;
−金属接点は層の形態をとる;
−金属接点は銀、アルミニウム、または銀−アルミニウム合金を含む;
−方法はステップ(a)の前に基板上に誘電体層を堆積させるステップを含む;
−レーザは赤外線範囲内、例えば1064nmの波長において放射する;
−レーザはレーザダイオード励起レーザであり、レーザダイオードによって引き込まれるピーク電流は20A〜30A、好ましくは25A〜28Aである;
−レーザは30kHz〜60kHz、好ましくは40kHz〜60kHzの周波数においてパルスを放射する;
−2つのパルス間の金属接点の面積のカバー率は少なくとも95%であり、好ましくは少なくとも97%である;
−レーザの走査速度は10m/sより低く、例えば1m/s〜10m/sである;
−レーザはその長さが1ns〜1μs、例えば100ns〜1μsであるパルスを放射する;および
−レーザは赤外線範囲内で放射するパルス状のレーザダイオード励起レーザであり、上記レーザは以下の条件下で利用される:
・パルスの周波数は40kHz〜60kHzにあり;
・2つのパルス間の金属接点の面積のカバー率は97%以上であり;
金属接点の面積にわたるレーザの走査速度は1m/s〜10m/sであり、好ましくは1m/s〜5m/sであり;かつ
・レーザダイオードは25A〜28Aのピーク電流を引き込む。
(a)金属粉末を溶剤と混合することによって形成されるペーストの形態の金属パターンを堆積させるステップ;
(b)溶剤を蒸発させるために、このようにステップ(a)において形成された集合体を加熱するステップ;および
(c)金属パターンと基板との間に金属接点を形成するためにアニールを実行するステップ。
−パルスの周波数は40kHz〜60kHzにあり;
−2つの連続するパルス間の金属接点の面積のカバー率は97%以上であり;
−金属接点の面積にわたるレーザの走査速度は1m/s〜10m/sであり、好ましくは1m/s〜5m/sであり;かつ
−レーザダイオードは25A〜28Aのピーク電流を引き込む。
Claims (14)
- 基板上の金属接点を得るための方法であって、
(a)金属粉末を溶剤と混合することから形成されるペーストの形態の金属パターンを堆積させるステップと、
(b)前記溶剤を蒸発させるために、このようにステップ(a)において形成された集合体を加熱するステップと、
(c)前記金属パターンと前記基板との間に金属接点を形成するためにアニールを実行するステップとを含み、
(d)前記金属接点が0.5J/cm2〜15J/cm2のエネルギー密度を有するレーザを使用して加熱されるステップをさらに含むことを特徴とする、方法。 - ステップ(a)はスクリーン印刷のステップである、請求項1に記載の方法。
- 前記金属パターンは少なくとも1μm厚である、請求項1または2に記載の方法。
- 前記金属接点はメッシュの形態をとる、請求項1〜3のいずれかに記載の方法。
- 前記金属接点は層の形態をとる、請求項1〜3のいずれかに記載の方法。
- 前記金属接点は銀、アルミニウム、または銀−アルミニウム合金を含む、請求項1〜5のいずれかに記載の方法。
- ステップ(a)の前に、前記基板上に誘電体層を堆積させるステップに関して準備がなされる、請求項1〜6のいずれかに記載の方法。
- 前記レーザは赤外線範囲内、例えば1064nmの波長において放射する、請求項1〜7のいずれかに記載の方法。
- 前記レーザはレーザダイオード励起レーザであり、前記レーザダイオードによって引き込まれるピーク電流は20A〜30A、好ましくは25A〜28Aである、請求項1〜8のいずれかに記載の方法。
- 前記レーザは30kHz〜60kHz、好ましくは40kHz〜60kHzの周波数においてパルスを放射する、請求項1〜9のいずれかに記載の方法。
- 2つのパルス間の前記金属接点の面積のカバー率は少なくとも95%であり、好ましくは少なくとも97%である、請求項1〜10のいずれかに記載の方法。
- 前記レーザの走査速度は10m/sより低く、例えば1m/s〜10m/sである、請求項1〜11のいずれかに記載の方法。
- 前記レーザはその長さが1ns〜1μs、例えば100ns〜1μsであるパルスを放射する、請求項1〜12のいずれかに記載の方法。
- 前記レーザは赤外線範囲内で放射するパルス状のレーザダイオード励起レーザであり、該レーザは以下の:
−前記パルスの周波数は40kHz〜60kHzにあり;
−2つのパルス間の前記金属接点の面積のカバー率は97%以上であり;
−前記金属接点の面積にわたる前記レーザの走査速度は1m/s〜10m/sであり、好ましくは1m/s〜5m/sであり;かつ
−前記レーザダイオードは25A〜28Aのピーク電流を引き込む、という条件下で利用される、請求項1〜13のいずれかに記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1001007A FR2957479B1 (fr) | 2010-03-12 | 2010-03-12 | Procede de traitement d'un contact metallique realise sur un substrat |
FR1001007 | 2010-03-12 | ||
PCT/IB2011/051042 WO2011111029A1 (fr) | 2010-03-12 | 2011-03-11 | Procede de traitement d'un contact metallique realise sur un substrat |
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JP2013526005A true JP2013526005A (ja) | 2013-06-20 |
JP5759490B2 JP5759490B2 (ja) | 2015-08-05 |
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US (1) | US20130095603A1 (ja) |
EP (1) | EP2545753A1 (ja) |
JP (1) | JP5759490B2 (ja) |
KR (1) | KR20130051924A (ja) |
CN (1) | CN102870509A (ja) |
FR (1) | FR2957479B1 (ja) |
WO (1) | WO2011111029A1 (ja) |
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- 2011-03-11 WO PCT/IB2011/051042 patent/WO2011111029A1/fr active Application Filing
- 2011-03-11 CN CN2011800206969A patent/CN102870509A/zh active Pending
- 2011-03-11 EP EP11722521A patent/EP2545753A1/fr not_active Withdrawn
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JP2016518516A (ja) * | 2013-03-05 | 2016-06-23 | ローレンス リバモア ナショナル セキュリティー, エルエルシー | 高電力ダイオードに基づく付加製造のためのシステムおよび方法 |
KR20190035850A (ko) * | 2016-08-02 | 2019-04-03 | 에이아이씨 회르만 게엠베하 & 코. 카게 | 실리콘 태양 전지의 접촉 그리드와 이미터층 사이의 옴 접촉 거동을 개선하는 방법 |
JP2019525471A (ja) * | 2016-08-02 | 2019-09-05 | アーイーツェー ヘルマン ゲーエムベーハー ウント コンパニー カーゲー | シリコン太陽電池のコンタクトグリッドとエミッタ層との間のオーミックコンタクト挙動を改善するための方法 |
JP7039555B2 (ja) | 2016-08-02 | 2022-03-22 | シーイー セル エンジニアリング ゲーエムベーハー | シリコン太陽電池のコンタクトグリッドとエミッタ層との間のオーミックコンタクト挙動を改善するための方法 |
KR102480652B1 (ko) * | 2016-08-02 | 2022-12-22 | 체에 셀 엔지니어링 게엠베하 | 실리콘 태양 전지의 접촉 그리드와 이미터층 사이의 옴 접촉 거동을 개선하는 방법 |
KR20200113275A (ko) * | 2018-02-07 | 2020-10-06 | 헤레우스 도이칠란트 게엠베하 운트 코. 카게 | 실리콘 태양 전지의 접촉 그리드와 이미터층 사이의 옴 접촉 거동을 개선하는 방법 |
KR102650785B1 (ko) | 2018-02-07 | 2024-03-22 | 체에 셀 엔지니어링 게엠베하 | 실리콘 태양 전지의 접촉 그리드와 이미터층 사이의 옴 접촉 거동을 개선하는 방법 |
Also Published As
Publication number | Publication date |
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WO2011111029A1 (fr) | 2011-09-15 |
JP5759490B2 (ja) | 2015-08-05 |
FR2957479B1 (fr) | 2012-04-27 |
EP2545753A1 (fr) | 2013-01-16 |
CN102870509A (zh) | 2013-01-09 |
FR2957479A1 (fr) | 2011-09-16 |
US20130095603A1 (en) | 2013-04-18 |
KR20130051924A (ko) | 2013-05-21 |
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