JP2013524012A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2013524012A5 JP2013524012A5 JP2013502704A JP2013502704A JP2013524012A5 JP 2013524012 A5 JP2013524012 A5 JP 2013524012A5 JP 2013502704 A JP2013502704 A JP 2013502704A JP 2013502704 A JP2013502704 A JP 2013502704A JP 2013524012 A5 JP2013524012 A5 JP 2013524012A5
- Authority
- JP
- Japan
- Prior art keywords
- slot
- coupled
- energy
- feed
- ground
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Applications Claiming Priority (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US31937710P | 2010-03-31 | 2010-03-31 | |
| US61/319,377 | 2010-03-31 | ||
| US32872510P | 2010-04-28 | 2010-04-28 | |
| US61/328,725 | 2010-04-28 | ||
| US37177410P | 2010-08-09 | 2010-08-09 | |
| US61/371,774 | 2010-08-09 | ||
| US39330910P | 2010-10-14 | 2010-10-14 | |
| US61/393,309 | 2010-10-14 | ||
| US13/048,440 US8795488B2 (en) | 2010-03-31 | 2011-03-15 | Apparatus for physical vapor deposition having centrally fed RF energy |
| US13/048,440 | 2011-03-15 | ||
| PCT/US2011/030226 WO2011123399A2 (en) | 2010-03-31 | 2011-03-28 | Apparatus for physical vapor deposition having centrally fed rf energy |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2013524012A JP2013524012A (ja) | 2013-06-17 |
| JP2013524012A5 true JP2013524012A5 (https=) | 2014-05-15 |
| JP5722428B2 JP5722428B2 (ja) | 2015-05-20 |
Family
ID=44708340
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013502704A Active JP5722428B2 (ja) | 2010-03-31 | 2011-03-28 | Ｒｆエネルギが中心に給送される物理蒸着のための装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8795488B2 (https=) |
| JP (1) | JP5722428B2 (https=) |
| KR (1) | KR101801760B1 (https=) |
| CN (1) | CN102859029B (https=) |
| TW (1) | TWI521081B (https=) |
| WO (1) | WO2011123399A2 (https=) |
Families Citing this family (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2914833B2 (ja) | 1992-09-14 | 1999-07-05 | シャープ株式会社 | 半導体レーザ |
| CN102439697B (zh) * | 2009-04-03 | 2015-08-19 | 应用材料公司 | 高压rf-dc溅射及改善此工艺的膜均匀性和阶梯覆盖率的方法 |
| US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| KR101904516B1 (ko) | 2011-02-09 | 2018-10-04 | 어플라이드 머티어리얼스, 인코포레이티드 | Ｒｆ ｐｖｄ 챔버를 위한 균일성 튜닝 가능한 정전척 접지 키트 |
| US9404174B2 (en) | 2011-12-15 | 2016-08-02 | Applied Materials, Inc. | Pinned target design for RF capacitive coupled plasma |
| US8702918B2 (en) | 2011-12-15 | 2014-04-22 | Applied Materials, Inc. | Apparatus for enabling concentricity of plasma dark space |
| US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
| US20140061039A1 (en) * | 2012-09-05 | 2014-03-06 | Applied Materials, Inc. | Target cooling for physical vapor deposition (pvd) processing systems |
| CN103849848B (zh) * | 2012-11-28 | 2016-08-31 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 物理气相沉积装置 |
| JP2016536472A (ja) * | 2013-11-05 | 2016-11-24 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 高周波（ｒｆ）スパッタ堆積源、堆積装置及びその組立て方法 |
| US9960021B2 (en) * | 2013-12-18 | 2018-05-01 | Applied Materials, Inc. | Physical vapor deposition (PVD) target having low friction pads |
| CN112599401B (zh) * | 2016-03-05 | 2024-03-22 | 应用材料公司 | 用于在物理气相沉积工艺中控制离子分数的方法和设备 |
| US10224224B2 (en) | 2017-03-10 | 2019-03-05 | Micromaterials, LLC | High pressure wafer processing systems and related methods |
| US10622214B2 (en) | 2017-05-25 | 2020-04-14 | Applied Materials, Inc. | Tungsten defluorination by high pressure treatment |
| JP6947914B2 (ja) | 2017-08-18 | 2021-10-13 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 高圧高温下のアニールチャンバ |
| US10276411B2 (en) | 2017-08-18 | 2019-04-30 | Applied Materials, Inc. | High pressure and high temperature anneal chamber |
| EP4321649B1 (en) | 2017-11-11 | 2025-08-20 | Micromaterials LLC | Gas delivery system for high pressure processing chamber |
| JP2021503714A (ja) | 2017-11-17 | 2021-02-12 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 高圧処理システムのためのコンデンサシステム |
| US11437221B2 (en) | 2017-11-17 | 2022-09-06 | Advanced Energy Industries, Inc. | Spatial monitoring and control of plasma processing environments |
| WO2019099925A1 (en) | 2017-11-17 | 2019-05-23 | Advanced Energy Industries, Inc. | Spatial and temporal control of ion bias voltage for plasma processing |
| US12230476B2 (en) | 2017-11-17 | 2025-02-18 | Advanced Energy Industries, Inc. | Integrated control of a plasma processing system |
| US12505986B2 (en) | 2017-11-17 | 2025-12-23 | Advanced Energy Industries, Inc. | Synchronization of plasma processing components |
| CN111788654B (zh) | 2017-11-17 | 2023-04-14 | 先进工程解决方案全球控股私人有限公司 | 等离子体处理系统中的调制电源的改进应用 |
| EP3711080B1 (en) | 2017-11-17 | 2023-06-21 | AES Global Holdings, Pte. Ltd. | Synchronized pulsing of plasma processing source and substrate bias |
| SG11202008256WA (en) | 2018-03-09 | 2020-09-29 | Applied Materials Inc | High pressure annealing process for metal containing materials |
| US10950429B2 (en) | 2018-05-08 | 2021-03-16 | Applied Materials, Inc. | Methods of forming amorphous carbon hard mask layers and hard mask layers formed therefrom |
| US10748783B2 (en) | 2018-07-25 | 2020-08-18 | Applied Materials, Inc. | Gas delivery module |
| WO2020117462A1 (en) | 2018-12-07 | 2020-06-11 | Applied Materials, Inc. | Semiconductor processing system |
| WO2021011450A1 (en) | 2019-07-12 | 2021-01-21 | Advanced Energy Industries, Inc. | Bias supply with a single controlled switch |
| US11901222B2 (en) | 2020-02-17 | 2024-02-13 | Applied Materials, Inc. | Multi-step process for flowable gap-fill film |
| US12125674B2 (en) | 2020-05-11 | 2024-10-22 | Advanced Energy Industries, Inc. | Surface charge and power feedback and control using a switch mode bias system |
| TWI787823B (zh) * | 2021-05-17 | 2022-12-21 | 天虹科技股份有限公司 | 可減少微塵的基板處理腔室及其遮擋機構 |
| JP7805737B2 (ja) * | 2021-09-28 | 2026-01-26 | 芝浦メカトロニクス株式会社 | 成膜装置 |
| US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
| US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
| US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
| US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
| US12567572B2 (en) | 2023-07-11 | 2026-03-03 | Advanced Energy Industries, Inc. | Plasma behaviors predicted by current measurements during asymmetric bias waveform application |
Family Cites Families (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01309965A (ja) | 1988-06-08 | 1989-12-14 | Matsushita Electric Ind Co Ltd | マグネトロンスパッタ装置 |
| US5482610A (en) * | 1991-11-14 | 1996-01-09 | Leybold Aktiengesellschaft | Cathode for coating a substrate |
| JP2001220671A (ja) | 1999-12-02 | 2001-08-14 | Anelva Corp | スパッタ成膜応用のためのプラズマ処理装置 |
| US6451177B1 (en) | 2000-01-21 | 2002-09-17 | Applied Materials, Inc. | Vault shaped target and magnetron operable in two sputtering modes |
| EP1254970A1 (de) * | 2001-05-03 | 2002-11-06 | Unaxis Balzers Aktiengesellschaft | Magnetronsputterquelle mit mehrteiligem Target |
| JP4614578B2 (ja) | 2001-06-01 | 2011-01-19 | キヤノンアネルバ株式会社 | スパッタ成膜応用のためのプラズマ処理装置 |
| US7504006B2 (en) | 2002-08-01 | 2009-03-17 | Applied Materials, Inc. | Self-ionized and capacitively-coupled plasma for sputtering and resputtering |
| US7179351B1 (en) | 2003-12-15 | 2007-02-20 | Novellus Systems, Inc. | Methods and apparatus for magnetron sputtering |
| US7820020B2 (en) * | 2005-02-03 | 2010-10-26 | Applied Materials, Inc. | Apparatus for plasma-enhanced physical vapor deposition of copper with RF source power applied through the workpiece with a lighter-than-copper carrier gas |
| US8557094B2 (en) | 2006-10-05 | 2013-10-15 | Applied Materials, Inc. | Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum |
| KR101010716B1 (ko) | 2007-07-25 | 2011-01-24 | 지에스나노텍 주식회사 | 비전도성 타겟을 사용하는 스퍼터링에 의한 세라믹 박막의증착 방법 및 그를 위한 장치 |
| US8070925B2 (en) | 2008-10-17 | 2011-12-06 | Applied Materials, Inc. | Physical vapor deposition reactor with circularly symmetric RF feed and DC feed to the sputter target |
| US9834840B2 (en) * | 2010-05-14 | 2017-12-05 | Applied Materials, Inc. | Process kit shield for improved particle reduction |
| TWI554630B (zh) * | 2010-07-02 | 2016-10-21 | 應用材料股份有限公司 | 減少沉積不對稱性的沉積設備及方法 |
-
2011
- 2011-03-15 US US13/048,440 patent/US8795488B2/en active Active
- 2011-03-17 TW TW100109194A patent/TWI521081B/zh active
- 2011-03-28 WO PCT/US2011/030226 patent/WO2011123399A2/en not_active Ceased
- 2011-03-28 JP JP2013502704A patent/JP5722428B2/ja active Active
- 2011-03-28 KR KR1020127027934A patent/KR101801760B1/ko active Active
- 2011-03-28 CN CN201180020863.XA patent/CN102859029B/zh active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2013524012A5 (https=) | ||
| TW202121619A (zh) | 用於基板支撐件的整合電極和接地平面 | |
| TWI581674B (zh) | 電漿產生裝置 | |
| WO2012054689A3 (en) | Substrate support with symmetrical feed structure | |
| WO2010071785A3 (en) | Plasma confinement structures in plasma processing systems | |
| IN2015DN04295A (https=) | ||
| WO2012033922A3 (en) | High conductivity electrostatic chuck | |
| WO2012044977A4 (en) | Compact rf antenna for an inductively coupled plasma ion source | |
| JP2015536566A5 (https=) | ||
| JP2017513585A5 (https=) | ||
| WO2013039972A3 (en) | Composite conductor insulation | |
| WO2015100233A8 (en) | Atmospheric interface for electrically grounded electrospray | |
| WO2012138580A3 (en) | Initiator with molded esd dissipater | |
| TW201346053A (zh) | 濺射裝置及使用其之沉積薄膜方法 | |
| JP5771466B2 (ja) | ダイボンダ及びダイボンダの接合材供給方法 | |
| TW200644031A (en) | Flat or substantially flat luminous structure | |
| CN209435522U (zh) | 一种等离子体发生装置 | |
| CN201788780U (zh) | 一种贴片电感器 | |
| CN103594950A (zh) | 固体绝缘开关的极柱动端屏蔽结构 | |
| CN106229063B (zh) | 电源线及电器设备 | |
| JP5322961B2 (ja) | プラズマｃｖｄ装置 | |
| CN204215954U (zh) | 一种含屏蔽罩的一体式陶瓷外壳 | |
| CN106229065B (zh) | 电源线及电器设备 | |
| RU2012136022A (ru) | Переход высокочастотный | |
| CN104685705B (zh) | 射频(rf)传导媒介 |