JP2013520831A - 水性研磨剤及びグラフトコポリマー並びにそれらをパターン形成された及び構造化されていない金属表面の研磨プロセスに用いる使用 - Google Patents
水性研磨剤及びグラフトコポリマー並びにそれらをパターン形成された及び構造化されていない金属表面の研磨プロセスに用いる使用 Download PDFInfo
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- JP2013520831A JP2013520831A JP2012554449A JP2012554449A JP2013520831A JP 2013520831 A JP2013520831 A JP 2013520831A JP 2012554449 A JP2012554449 A JP 2012554449A JP 2012554449 A JP2012554449 A JP 2012554449A JP 2013520831 A JP2013520831 A JP 2013520831A
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- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- RPQRDASANLAFCM-UHFFFAOYSA-N oxiran-2-ylmethyl prop-2-enoate Chemical compound C=CC(=O)OCC1CO1 RPQRDASANLAFCM-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229960003330 pentetic acid Drugs 0.000 description 1
- ABLZXFCXXLZCGV-UHFFFAOYSA-N phosphonic acid group Chemical group P(O)(O)=O ABLZXFCXXLZCGV-UHFFFAOYSA-N 0.000 description 1
- 229940081066 picolinic acid Drugs 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920000656 polylysine Polymers 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 229920005862 polyol Polymers 0.000 description 1
- 150000003077 polyols Chemical class 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- 125000001453 quaternary ammonium group Chemical group 0.000 description 1
- LOAUVZALPPNFOQ-UHFFFAOYSA-N quinaldic acid Chemical compound C1=CC=CC2=NC(C(=O)O)=CC=C21 LOAUVZALPPNFOQ-UHFFFAOYSA-N 0.000 description 1
- GJAWHXHKYYXBSV-UHFFFAOYSA-N quinolinic acid Chemical compound OC(=O)C1=CC=CN=C1C(O)=O GJAWHXHKYYXBSV-UHFFFAOYSA-N 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000011541 reaction mixture Substances 0.000 description 1
- 239000012966 redox initiator Substances 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- GRJISGHXMUQUMC-UHFFFAOYSA-N silyl prop-2-enoate Chemical group [SiH3]OC(=O)C=C GRJISGHXMUQUMC-UHFFFAOYSA-N 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
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- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- FAGUFWYHJQFNRV-UHFFFAOYSA-N tetraethylenepentamine Chemical compound NCCNCCNCCNCCN FAGUFWYHJQFNRV-UHFFFAOYSA-N 0.000 description 1
- 238000001890 transfection Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
- C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
- C08F220/10—Esters
- C08F220/26—Esters containing oxygen in addition to the carboxy oxygen
- C08F220/32—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals
- C08F220/325—Esters containing oxygen in addition to the carboxy oxygen containing epoxy radicals containing glycidyl radical, e.g. glycidyl (meth)acrylate
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
- C08F283/00—Macromolecular compounds obtained by polymerising monomers on to polymers provided for in subclass C08G
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
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Abstract
Description
本発明は新規な水性研磨剤及びグラフトコポリマー並びにそれらを新規な研磨プロセス、特にパターン形成された及び構造化されていない金属表面の化学機械研磨(CMP)プロセスに用いる使用に関する。
本願で引用された文献は、その全体が援用されている。
集積回路(IC)は、構造化された半導電、非導電及び導電の薄層から構成されている。これらのパターン形成された層は、慣習的に、層材料を、例えば、蒸着し且つそれをマイクロリソグラフィー法によりパターン形成することによって適用して製造される。種々の半導電、非導電及び導電の層状物を組み合わせることによって、トランジスタ、コンデンサ、抵抗及び配線などの電子回路要素が製造される。
本発明の課題は、研磨のための新規な水性研磨剤を提供することであり、特に、その新規な研磨剤が従来技術の欠点を示さない、パターン形成された及び構造化されていない金属表面の、好ましくはパターン形成された金属表面の、更に好ましくは誘電材料に埋設された金属パターンの、特に銅含有パターンのCMPのための新規な水性研磨剤を提供することであった。
従って、研磨材として、水相中に微分散し且つ研磨されるべき表面上で金属及び/又は金属酸化物と相互作用でき且つ前記金属及び金属カチオンと錯体を形成できる複数の少なくとも1種の官能基(a1)をその表面上に有する少なくとも1種のポリマー粒子(A)を含む、新規な水性研磨剤が発見されており、前記ポリマー粒子(A)は、複数の官能基(a1)を有する少なくとも1種のオリゴマー又はポリマーの存在下で少なくとも1つのラジカル重合性二重結合を有する少なくとも1種のモノマーのエマルション重合又は懸濁重合によって製造される。
(I)複数の官能基(a1)を有する少なくとも1種のオリゴマー又はポリマーの存在下で、少なくとも1つのラジカル重合性二重結合を有する少なくとも1種のモノマーを、エマルション重合又は懸濁重合することによって、研磨されるべき表面上で金属及び/又は金属酸化物と相互作用でき且つ前記金属及び金属カチオンと錯体を形成できる複数の少なくとも1種の官能基(a1)をその表面上に有する少なくとも1種のポリマー粒子(A)を製造する工程;
(II)研磨材として水相中に微分散した少なくとも1種のポリマー粒子(A)を含有する水性研磨剤を製造する工程;及び
(III)前記金属表面を、前記水性研磨剤で化学機械研磨する工程
を含む、化学機械研磨方法が発見された。
上記の従来技術を鑑みて、本発明の根底にある課題を、CMP剤、CMPプロセス及び本発明の使用によって解決できることは驚くべきことであり且つ当業者が予期できないことであった。
本発明のCMP剤は、研磨材として、水相中に微分散した、本発明のグラフトコポリマーを含有する又は該グラフトコポリマーからなるポリマー粒子(A)を含めて、少なくとも1種の、好ましくは1種のポリマー粒子(A)を含む。
(I)好ましくは、アミノトリアジン−ポリアミン縮合物、ポリエチレンイミン、並びに塩基性α−アミノ酸のポリアミノ酸及びポリペプチド、特に、アミノトリアジン−ポリアミン縮合物からなる群から選択される複数の官能基(a1)を有する少なくとも1種のオリゴマー又はポリマーの存在下で、少なくとも1つのラジカル重合性二重結合を有する少なくとも1種のモノマーを、エマルション重合又は懸濁重合することによって、研磨されるべき表面上で金属及び/又は金属酸化物と相互作用でき且つ前記金属及び金属カチオンと錯体を形成できる複数の少なくとも1種の官能基(a1)をその表面上に有する上記の少なくとも1種のポリマー粒子(A)を製造する工程;
(II)研磨材として水相中に微分散した少なくとも1種のポリマー粒子(A)を含有する水性研磨剤を製造する工程;及び
(III)前記金属表面を、前記水性研磨剤で化学機械研磨する工程
を含む、本発明のCMPプロセスの過程で製造される。
実施例1
ポリマー粒子(A)の製造
アンカー攪拌機、還流凝縮器及び室温での供給のための3つの供給ラインを取り付けた2Lの反応フラスコに、窒素下で425gの脱イオン水及び30gのメラミン−テトラエチレンペンタアミン縮合物を装入した。該縮合物は、国際特許出願WO2008/148766A1号に記載された一般的な方法に従って、メラミンとテトラエチレンペンタアミンとを一緒に溶融してアンモニアを分離し、それによって塩化アンモニウムを触媒として用いて調製された。フラスコの内容物を、撹拌を続けて80℃まで加熱した。その後、最初のpH値を、65質量%の硝酸溶液を用いて、5に調整した。80℃で、12gのグリシジルメタクリレートを反応器中に装入し、メラミン−テトラエチレンペンタアミン縮合物と30分間反応させた。その後、2gのラジカル開始剤[2,2’−アゾ−(2−アミジノプロパン)ジヒドロクロリド;V−50、和光純薬工業株式会社製のVazo50]及び66.5gの脱イオン水を反応器中に装入した。同時に、2つのモノマー供給が開始され、反応フラスコに90分間連続的に供給された:
供給I:15質量%の水溶液としての26.667gのメタクリルアミド及び243.5gの脱イオン水;
供給II:184gのスチレン。
固体ポリマー粒子(A)を含有するCMP剤の製造
実施例1のポリマー粒子(A)を使用して、以下の組成を有する実施例2のCMP剤を製造した:1質量%のポリマー粒子(A)、1質量%の過酸化水素(B)及び0.2質量%のグリシン(B)。CMP剤のpHは硝酸を用いて5に調整した。
SER=重量損/[密度×(周囲面積+2×断面の面積)×時間]、
式中、
重量損=溶解後の銅ディスク中の重量損失;
密度=銅の密度;
断面の面積=ディスクの断面面積;
周囲面積=ディスクの周囲面積;及び
時間=溶解時間。
MRR=重量損/(密度×断面の面積×時間);
式中、
重量損=研磨後の銅ディスク中の重量損失;
密度=銅の密度;
断面の面積=ディスクの断面面積;及び
時間=研磨時間。
Claims (17)
- 研磨材として、水相中に微分散し且つ研磨されるべき表面上で金属及び/又は金属酸化物と相互作用でき且つ前記金属及び金属カチオンと錯体を形成できる複数の少なくとも1種の官能基(a1)をその表面上に有する少なくとも1種のポリマー粒子(A)を含む、水性研磨剤であって、前記ポリマー粒子(A)は、複数の官能基(a1)を有する少なくとも1種のオリゴマー又はポリマーの存在下で少なくとも1つのラジカル重合性二重結合を有する少なくとも1種のモノマーのエマルション重合又は懸濁重合によって製造される、水性研磨剤。
- ポリマー粒子(A)が、HPPS動的光散乱法によって測定して1〜1000nmの範囲の一次粒子径を有することを特徴とする、請求項1に記載の水性研磨剤。
- 官能基(a1)がカチオンを形成可能であることを特徴とする、請求項1又は2に記載の水性研磨剤。
- 官能基(a1)がアミノ基であることを特徴とする、請求項3に記載の水性研磨剤。
- 複数の官能基(a1)を有するオリゴマー又はポリマーが、アミノトリアジン−ポリアミン縮合物、ポリエチレンイミン並びに塩基性α−アミノ酸のポリアミノ酸及びポリペプチドからなる群から選択されることを特徴とする、請求項1から4までのいずれか1項に記載の水性研磨剤。
- アミノトリアジンがメラミン及びベンゾグアナミンからなる群から選択され、且つ塩基性アミノ酸がリジン、アルギニン、オルニチン及びヒスチジンからなる群から選択されることを特徴とする、請求項5に記載の水性研磨剤。
- ポリマーのオリゴマーが少なくとも1つの反応性グラフト中心を含有することを特徴とする、請求項1から6までのいずれか1項に記載の水性研磨剤。
- 反応性グラフト中心が少なくとも1つのラジカル重合性二重結合を含有することを特徴とする、請求項7に記載の水性研磨剤。
- 酸化剤、錯化剤、不動態膜形成剤、界面活性剤、多価金属イオン、pH調整剤、並びに固体有機及び無機粒子からなる群から選択される少なくとも1種の更なる機能性添加剤(B)を含有することを特徴とする、請求項1から8までのいずれか1項に記載の水性研磨剤。
- pH値が3〜7であることを特徴とする、請求項1から9までのいずれか1項に記載の水性研磨剤。
- 金属が銅であることを特徴とする、請求項1から11までのいずれか1項に記載の水性研磨剤。
- 少なくとも1種のオリゴマー又はポリマーのアミノトリアジン−ポリアミン縮合物の存在下で少なくとも1つのラジカル重合性二重結合を有する少なくとも1つのモノマーのエマルション重合又は懸濁重合によって製造される、グラフトコポリマー。
- パターン形成された及び構造化されていない金属表面の化学機械研磨方法であって、
(I)複数の官能基(a1)を有する少なくとも1種のオリゴマー又はポリマーの存在下で、少なくとも1つのラジカル重合性二重結合を有する少なくとも1種のモノマーを、エマルション重合又は懸濁重合することによって、研磨されるべき表面上で金属及び/又は金属酸化物と相互作用でき且つ前記金属及び金属カチオンと錯体を形成できる複数の少なくとも1種の官能基(a1)をその表面上に有する少なくとも1種のポリマー粒子(A)を製造する工程;
(II)研磨材として水相中に微分散した少なくとも1種のポリマー粒子(A)を含有する水性研磨剤を製造する工程;及び
(III)前記金属表面を、前記水性研磨剤で化学機械研磨する工程
を含む、化学機械研磨方法。 - 請求項1から11までのいずれか1項に記載の水性研磨剤をプロセス工程(II)において製造することを特徴とする、請求項13に記載の方法。
- 銅ダマシンプロセスで使用されることを特徴とする、請求項13又は14に記載の方法。
- 請求項1から11までのいずれか1項に記載の水性研磨剤、請求項12に記載のグラフトコポリマー及び請求項13から15までのいずれか1項に記載の方法を集積回路を含有するウェハの製造に用いる使用。
- 集積回路が銅ダマシンパターンを含むことを特徴とする、請求項16に記載の使用。
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US9070632B2 (en) | 2010-10-07 | 2015-06-30 | Basf Se | Aqueous polishing composition and process for chemically mechanically polishing substrates having patterned or unpatterned low-k dielectric layers |
EP2502969A1 (en) | 2011-03-22 | 2012-09-26 | Basf Se | A chemical mechanical polishing (cmp) composition comprising two types of corrosion inhibitors |
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TW201134930A (en) | 2011-10-16 |
WO2011104640A1 (en) | 2011-09-01 |
US9005472B2 (en) | 2015-04-14 |
EP2539412A4 (en) | 2013-07-31 |
KR101848519B1 (ko) | 2018-04-12 |
CN102782067B (zh) | 2015-08-05 |
JP6004943B2 (ja) | 2016-10-12 |
TWI499664B (zh) | 2015-09-11 |
CN102782067A (zh) | 2012-11-14 |
US20120322264A1 (en) | 2012-12-20 |
EP2539412A1 (en) | 2013-01-02 |
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