JP2013518425A - 結晶シリコン基板の表面の下処理を含む光起電セルの製造方法 - Google Patents
結晶シリコン基板の表面の下処理を含む光起電セルの製造方法 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims abstract description 79
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title abstract description 13
- 238000000034 method Methods 0.000 claims abstract description 63
- 238000005530 etching Methods 0.000 claims abstract description 56
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 48
- 230000003647 oxidation Effects 0.000 claims abstract description 42
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 42
- 230000008569 process Effects 0.000 claims abstract description 38
- 239000010409 thin film Substances 0.000 claims abstract description 31
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 24
- 230000001590 oxidative effect Effects 0.000 claims description 9
- 238000002161 passivation Methods 0.000 claims description 9
- 239000007800 oxidant agent Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims description 6
- 239000013078 crystal Substances 0.000 claims description 5
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 20
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 18
- 229910052760 oxygen Inorganic materials 0.000 description 13
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 12
- 239000001301 oxygen Substances 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 11
- 229910052710 silicon Inorganic materials 0.000 description 11
- 239000010703 silicon Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 10
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 8
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 7
- 238000009499 grossing Methods 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 5
- 238000011109 contamination Methods 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 230000009471 action Effects 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- 230000006978 adaptation Effects 0.000 description 3
- 239000012670 alkaline solution Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000010981 drying operation Methods 0.000 description 2
- 239000008246 gaseous mixture Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000003044 adaptive effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 230000001186 cumulative effect Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000007725 thermal activation Methods 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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Abstract
Description
結晶シリコン基板の表面に異方性エッチングを施すステップ、および
前記表面に、酸化シリコンの形成および該酸化シリコンの除去を含む、等方性エッチング処理を施すステップ
を含む方法に関する。
真正非晶質シリコンの層2、
基板1とヘテロ接合を形成するように例えばp型にドープされた非晶質シリコンの層3、
例えば酸化インジウムスズ(すなわち、ITO)で作られた電極4、および
例えばくし形の集電体5
によって一様かつ連続的に覆われた前面1aを含んでいる。
真正非晶質シリコンの層7、
例えばn型にきわめて高濃度にドープされた非晶質シリコンの層8、
例えばITOで作られた電極9、および
くし形を有する集電体10
によって一様かつ連続的に覆われる。
結晶シリコン基板の表面に異方性エッチングを施すステップ、および
前記表面に、酸化シリコンの形成および前記酸化シリコンの除去を含む等方性エッチング処理を施すステップ
を含んでいる少なくとも1つの光起電セルを製造するための方法であって、
前記表面の等方性エッチング処理が、基板の前記表面に熱によって活性化される乾式酸化によって2nm〜500nmの間の厚さを有する酸化シリコン薄膜を形成すること、および前記酸化シリコン薄膜を除去することからそれぞれなる2つの連続的な作業を含むことを特徴とする方法によって達成される。
・基板のテクスチャが施された面の表面の粗さを大いに軽減することで、前記基板の表面へと直接付着されるように意図された薄い層との界面における最小レベルのエネルギー状態密度を保証し、
・構造の角(ピラミッドの頂点「s」および領域「b」)に丸みを付け、後に付着される薄い層のより良好な順応を可能にする
ことができる。
・図9において、パッシベーション層を形成している真正非晶質シリコンの薄い層2と、
・ドーピングの型が結晶シリコン基板のドーピングの型と反対である、非晶質シリコンの薄い層3と、
・電極4と、
・集電体5と
を連続的に含む多層積層体の前記表面への形成を行なうことができる。
Claims (15)
- 以下の連続的なステップ、すなわち
結晶シリコン基板(1)の表面(1a、1b)に異方性エッチングを施すステップと、
前記表面(1a、1b)に等方性エッチング処理を施すステップであって、この処理は酸化シリコンの形成および前記酸化シリコンの除去を含むステップと、を含む、少なくとも1つの光起電セルを製造するための方法であって、
前記表面(1)に等方性エッチング処理を施すステップは、
熱によって活性化される乾式酸化によって、前記基板(1)の前記表面(1a、1b)に2nm〜500nmの間の範囲の厚さを有する酸化シリコン薄膜(11)を形成することと、
前記酸化シリコン薄膜(11)を除去することと、からそれぞれなる2つの連続的な作業を含むことを特徴とする方法。 - 前記熱によって活性化される乾式酸化の作業は、
前記基板(1)の前記表面(1a、1b)に、室温よりも高い温度を加えることと、
気体状の酸化剤またはプラズマに含まれる酸化剤を使用することと、を含むことを特徴とする請求項1に記載の方法。 - 前記熱によって活性化される乾式酸化の作業は、前記基板(1)の前記表面(1a、1b)に紫外線を当てることを含むことを特徴とする請求項2に記載の方法。
- 前記熱によって活性化される乾式酸化の作業は、マイクロ波、高周波、または超高周波によって活性化されるプラズマ処理を含むことを特徴とする請求項2に記載の方法。
- 前記酸化シリコン薄膜(11)を除去する作業は、乾式法によって実行されることを特徴とする請求項1〜4のいずれか一項に記載の方法。
- 前記酸化シリコン薄膜(11)を除去する作業は、湿式法によって実行されることを特徴とする請求項1〜4のいずれか一項に記載の方法。
- 前記酸化シリコン薄膜(11)を除去する作業は、還元性媒質における処理によって実行されることを特徴とする請求項1〜4のいずれか一項に記載の方法。
- 前記2つの連続的な作業は、等方性エッチング処理の際に少なくとも1回繰り返される作業サイクルを構成することを特徴とする請求項1〜7のいずれか一項に記載の方法。
- 前記等方性エッチング処理の際に形成される酸化シリコンの合計の厚さは、10nmよりも大きいことを特徴とする請求項1〜8のいずれか一項に記載の方法。
- 前記基板(1)の表面(1a、1b)は、等方性エッチングによって処理された後に、
パッシベーション層(2)と、
所定のドーピング型を有する非晶質または微結晶シリコンの薄い層(3、8)と、
電極(4)と、
集電体(5)と
を順に備える多層積層体で少なくとも部分的に覆われることを特徴とする請求項1〜9のいずれか一項に記載の方法。 - 前記非晶質または微結晶シリコンの薄い層(3)のドーピング型は、結晶シリコン基板(1)のドーピング型とは反対であることを特徴とする請求項10に記載の方法。
- 前記非晶質または微結晶シリコンの薄い層(8)のドーピング型は、結晶シリコン基板(1)のドーピング型と同一であることを特徴とする請求項10に記載の方法。
- 前記基板(1)とは異なる性質および/または結晶構造および/または形態を有する材料で形成される層(12a、12b)を成膜するステップを含み、
前記ステップは、表面(1a、1b)の異方性エッチングと等方性エッチング処理との間に実行され、
前記層は、酸化シリコン薄膜(11)を除去する作業の際に除去されることを特徴とする請求項10〜12のいずれか一項に記載の方法。 - 前記パッシベーション層(2)は、真正非晶質シリコンの少なくとも1つの薄い層(2)によって形成されることを特徴とする請求項10〜13のいずれか一項に記載の方法。
- パッシベーション層(2)が、基板(1)の前記表面(1a、1b)に直接接触した結晶酸化シリコンの少なくとも1つの薄い層によって形成されることを特徴とする請求項10〜14のいずれか一項に記載の方法。
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FR1000306A FR2955707B1 (fr) | 2010-01-27 | 2010-01-27 | Procede de realisation d'une cellule photovoltaique avec preparation de surface d'un substrat en silicium cristallin |
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PCT/FR2011/000049 WO2011092401A2 (fr) | 2010-01-27 | 2011-01-26 | Procede de realisation d'une cellule photovoltaique avec preparation de surface d'un substrat en silicium cristallin |
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EP2529418B1 (fr) | 2019-06-26 |
CN102725869B (zh) | 2016-07-20 |
CN102725869A (zh) | 2012-10-10 |
WO2011092401A3 (fr) | 2011-11-17 |
EP2529418A2 (fr) | 2012-12-05 |
FR2955707B1 (fr) | 2012-03-23 |
US20120288985A1 (en) | 2012-11-15 |
US8877539B2 (en) | 2014-11-04 |
WO2011092401A2 (fr) | 2011-08-04 |
JP6033687B2 (ja) | 2016-11-30 |
FR2955707A1 (fr) | 2011-07-29 |
KR20120104441A (ko) | 2012-09-20 |
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