CN106098815A - 光伏太阳能晶硅锥针式电池毯 - Google Patents

光伏太阳能晶硅锥针式电池毯 Download PDF

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CN106098815A
CN106098815A CN201610547945.4A CN201610547945A CN106098815A CN 106098815 A CN106098815 A CN 106098815A CN 201610547945 A CN201610547945 A CN 201610547945A CN 106098815 A CN106098815 A CN 106098815A
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photovoltaic solar
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李玉强
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

一种能创新太阳能发电的光伏太阳能晶硅锥针式电池毯，属太阳能电池类领域。其特征是；将N型硅锥针(3)和P型硅锥针(5)及PN结(4)制成安放好后，再铺上透光防尘薄胶(2)加以固定，再通过透光防尘薄胶(2)就能看见N型硅锥针尖(1)，图2是传统的平板型太阳能电池板发电原理剖面结构示意图以作对比，因原理相同结构不同而功能确各异，这是在传统太阳能电池板基础上的创新，也许；光伏太阳能发电从此就破难关跨越腾飞造福我国人民和全人类。

Description

光伏太阳能晶硅锥针式电池毯
所属技术领域；
本发明涉及太阳能电池的光伏太阳能晶硅锥针式电池毯，属太阳能电池类领域。
背景技术；
目前，公知的光伏太阳能电池板种类很多，而太阳能电池板的阳光接收电能转换率普遍都只有13％至32％是很低的，这是道世界难题，然而光伏太阳能清洁能源对我国和全人类又极为重要，经反复研究发现，现在的多晶硅单晶硅和非晶硅太阳能电池板全都是平板型结构，在被阳光照射时有很大部分阳光都被反射掉了，这是光生伏特效应电能转换率低的主要原因，为了解决这一难题，本发明是这样来创新的。
发明内容；
本发明解决其技术问题所采用的技术方案是；研究出了一种M型晶硅锥针式电池毯，将传统平板型结构的电池板变成M型锥针式电池毯，由于M型电池毯在接收光照时的表面结构已发生变化，就是有型增加了N型硅和P型硅接收光照时的有效面积，当阳光照射进N型硅锥针“森林”时，N型硅锥针间直接或相互反射与被反射之间又相互吸收，很大部分阳光就不会被反射掉而转换成电能，可由现在的13％至32％提高到60％至80％，电池毯的锥针若能始终垂直对准太阳，电能转换率还会更高，从而在客观上解决了光生伏特效应电能转换率低的难题，那还有少数阳光又是怎样跑掉的呢？是因为N型硅锥针尖若没垂直对准太阳，阳光在90度的折射条件下就会高于锥针尖，相互已形不成反射与被反射的关系了，所以跑掉少数阳光是因为照射角度不垂直所致，此法对生产成本相对而言有所提高。
本发明的有益效果是；合乎价值工程学成本略为提高而功能确大为提高的理论。
附图说明；
图1是本发明的M型电池毯太阳能发电原理剖面结构示意图。
图2是传统的平板型太阳能电池板发电原理剖面结构示意图。
图1中；1；N型硅锥针尖，2；透光防尘薄胶，3；N型硅锥针，4；PN结，5；P型硅锥针。
具体实施方式；
本发明还要通过优选法做很多次试验才能定型，首先将图1中的N型硅锥针(3)和P型硅锥针(5)及PN结(4)制成安放好后，再铺上透光防尘薄胶(2)加以固定，再通过透光防尘薄胶(2)就能看见N型硅锥针尖(1)，图2是传统的平板型太阳能电池板发电原理剖面结构示意图以作对比，因原理相同结构不同而功能确各异，这是在传统太阳能电池板基础上的创新。

Claims (3)

1.一种能创新太阳能发电的光伏太阳能晶硅锥针式电池毯，其特征是；1；N型硅锥针尖，2；透光防尘薄胶，3；N型硅锥针，4；PN结，5；P型硅锥针连接。
2.根据权利要求1所述的光伏太阳能晶硅锥针式电池毯，其特征是；3；N型硅锥针，4；PN结，5；P型硅锥针连接。
3.根据权利要求1所述的光伏太阳能晶硅锥针式电池毯，其特征是；1；N型硅锥针尖，2；透光防尘薄胶连接。
CN201610547945.4A 2016-07-01 2016-07-01 光伏太阳能晶硅锥针式电池毯 Pending CN106098815A (zh)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201349009Y (zh) * 2008-12-19 2009-11-18 北京工业大学 具有防尘自清洁功能的太阳能电池
CN101635317A (zh) * 2009-05-26 2010-01-27 珈伟太阳能(武汉)有限公司 一种背面铝扩散n型太阳能电池及制作背电极方法
FR2955707A1 (fr) * 2010-01-27 2011-07-29 Commissariat Energie Atomique Procede de realisation d'une cellule photovoltaique avec preparation de surface d'un substrat en silicium cristallin
JP2014082340A (ja) * 2012-10-17 2014-05-08 Masstech Corp 内部電界が抑制された太陽光発電装置
CN204885179U (zh) * 2015-06-16 2015-12-16 镇江大全太阳能有限公司 一种抗lid黑硅太阳能高效电池
CN105304733A (zh) * 2015-03-13 2016-02-03 常州天合光能有限公司 太阳能电池微纳尺寸陷光结构、太阳能电池及其制备方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN201349009Y (zh) * 2008-12-19 2009-11-18 北京工业大学 具有防尘自清洁功能的太阳能电池
CN101635317A (zh) * 2009-05-26 2010-01-27 珈伟太阳能(武汉)有限公司 一种背面铝扩散n型太阳能电池及制作背电极方法
FR2955707A1 (fr) * 2010-01-27 2011-07-29 Commissariat Energie Atomique Procede de realisation d'une cellule photovoltaique avec preparation de surface d'un substrat en silicium cristallin
JP2014082340A (ja) * 2012-10-17 2014-05-08 Masstech Corp 内部電界が抑制された太陽光発電装置
CN105304733A (zh) * 2015-03-13 2016-02-03 常州天合光能有限公司 太阳能电池微纳尺寸陷光结构、太阳能电池及其制备方法
CN204885179U (zh) * 2015-06-16 2015-12-16 镇江大全太阳能有限公司 一种抗lid黑硅太阳能高效电池

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Application publication date: 20161109