JP2013514967A - 高性能カーボンナノチューブエネルギー蓄積装置 - Google Patents
高性能カーボンナノチューブエネルギー蓄積装置 Download PDFInfo
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 109
- 229910021393 carbon nanotube Inorganic materials 0.000 title claims abstract description 106
- 238000004146 energy storage Methods 0.000 title claims abstract description 42
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- 229910001496 lithium tetrafluoroborate Inorganic materials 0.000 description 2
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- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000003491 array Methods 0.000 description 1
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- 229910003002 lithium salt Inorganic materials 0.000 description 1
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- MCVFFRWZNYZUIJ-UHFFFAOYSA-M lithium;trifluoromethanesulfonate Chemical compound [Li+].[O-]S(=O)(=O)C(F)(F)F MCVFFRWZNYZUIJ-UHFFFAOYSA-M 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
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- 229910052760 oxygen Inorganic materials 0.000 description 1
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- 239000001103 potassium chloride Substances 0.000 description 1
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- 238000012545 processing Methods 0.000 description 1
- RUOJZAUFBMNUDX-UHFFFAOYSA-N propylene carbonate Chemical compound CC1COC(=O)O1 RUOJZAUFBMNUDX-UHFFFAOYSA-N 0.000 description 1
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- 239000000243 solution Substances 0.000 description 1
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- 150000005621 tetraalkylammonium salts Chemical class 0.000 description 1
- 125000005497 tetraalkylphosphonium group Chemical group 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/84—Processes for the manufacture of hybrid or EDL capacitors, or components thereof
- H01G11/86—Processes for the manufacture of hybrid or EDL capacitors, or components thereof specially adapted for electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/26—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features
- H01G11/28—Electrodes characterised by their structure, e.g. multi-layered, porosity or surface features arranged or disposed on a current collector; Layers or phases between electrodes and current collectors, e.g. adhesives
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/22—Electrodes
- H01G11/30—Electrodes characterised by their material
- H01G11/32—Carbon-based
- H01G11/36—Nanostructures, e.g. nanofibres, nanotubes or fullerenes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G11/00—Hybrid capacitors, i.e. capacitors having different positive and negative electrodes; Electric double-layer [EDL] capacitors; Processes for the manufacture thereof or of parts thereof
- H01G11/52—Separators
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/13—Energy storage using capacitors
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/84—Manufacture, treatment, or detection of nanostructure
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Abstract
【選択図】 図7
Description
[017]図1〜図3に、本発明の一実施形態による、エネルギー蓄積装置の一部の例示的な生産段階の図を示す。図1Aを参照すると、金属基板102aが選定される。金属基板102aは金属合金とすることができ、金属合金は、Fe、NiもしくはCo、または任意の他の金属、あるいはカーボンナノチューブの成長を支える能力をもつ金属の組合せなどの金属触媒108aを含んでいる様々な合金とすることができる。一例として、FeCrAl合金、カンタル(例えば、主として鉄、クロム(20〜30%)、およびアルミニウム(4〜7.5%))、ニュージャージー州モリスタウンのDriver−Harris Companyから入手可能なニクロム(登録商標)(例えば、ニッケル80質量パーセントおよびクロム20質量パーセント)、またはステンレス鋼がある。
Claims (20)
- エネルギー蓄積装置の一部を形成する方法であって、
金属基板にアクセスするステップと、
金属基板上に複数のカーボンナノチューブ(CNT)を直接形成するステップと、
前記複数のCNTから非晶質炭素を除去するステップと、
前記複数のCNTを電解セパレータに結合するステップと、
を備える方法。 - 前記金属基板が金属触媒を含む、請求項1に記載の方法。
- 前記金属基板が金属触媒でコーティングされる、請求項1に記載の方法。
- 前記複数のCNTが、触媒層を追加することなく前記金属基板上で直接成長される、請求項1に記載の方法。
- 前記非晶質炭素が水を伴うプロセスを経て除去される、請求項1に記載の方法。
- 前記複数のCNTが実質的に垂直に整列される、請求項1に記載の方法。
- 前記複数のCNTが化学気相成長(CVD)によって形成される、請求項1に記載の方法。
- キャパシタを形成する方法であって、
第1の金属基板上に第1の複数のカーボンナノチューブ(CNT)を形成するステップと、
前記第1の複数のカーボンナノチューブ(CNT)から非晶質炭素を除去するステップと、
第2の金属基板上に第2の複数のカーボンナノチューブ(CNT)を形成するステップと、
前記第2の複数のCNTから非晶質炭素を除去するステップと、
前記第1の複数のCNTおよび前記第2の複数のCNTを膜に結合するステップと、
を備える方法。 - 前記第1の金属基板および前記第2の金属基板が金属触媒を含む、請求項8に記載の方法。
- 前記第1の金属基板および前記第2の金属基板が金属触媒でコーティングされる、請求項8に記載の方法。
- 前記第1の複数のCNTが、触媒層を追加することなく前記第1の金属基板上に直接成長される、請求項8に記載の方法。
- 前記第1の複数のCNTが実質的に垂直に整列される、請求項8に記載の方法。
- 前記膜が電解セパレータである、請求項8に記載の方法。
- エネルギー蓄積装置であって、
第1の金属基板および第2の金属基板と、
電解セパレータと、
前記第1の金属基板、前記第2の金属基板、および前記電解セパレータに結合された複数のカーボンナノチューブ(CNT)と、
を備え、
前記複数のCNTの第1の部分が前記第1の金属基板上に直接成長させられ、前記複数のCNTの第2の部分が前記第2の金属基板上に直接成長させられ、前記複数のCNTから非晶質炭素が除去されている、エネルギー蓄積装置。 - 前記第1の金属基板が金属触媒を含む、請求項14に記載のエネルギー蓄積装置。
- 前記複数のCNTの前記第1の部分が第1の電極を形成し、前記複数のCNTの前記第2の部分が第2の電極を形成し、前記第1の電極および前記第2の電極が1×1cm2より大きい、請求項14に記載のエネルギー蓄積装置。
- 前記複数のCNTが、触媒層を追加することなく前記金属基板上に直接成長される、請求項14に記載のエネルギー蓄積装置。
- 請求項18は原文になし。
- 前記エネルギー蓄積装置がキャパシタであり、前記キャパシタが0.05Vを超える電圧で動作可能である、請求項14に記載のエネルギー蓄積装置。
- 前記複数のCNTが連続プロセスで形成される、請求項14に記載のエネルギー蓄積装置。
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US28878809P | 2009-12-21 | 2009-12-21 | |
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PCT/US2010/061375 WO2011084756A2 (en) | 2009-12-21 | 2010-12-20 | High performance carbon nanotube energy storage device |
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JP2016100781A Active JP6370835B2 (ja) | 2009-12-21 | 2016-05-19 | エネルギー蓄積装置の一部を形成する方法及びキャパシタを形成する方法 |
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US (2) | US8817452B2 (ja) |
EP (1) | EP2517219B1 (ja) |
JP (3) | JP2013514967A (ja) |
CN (1) | CN102893351A (ja) |
TW (1) | TW201135769A (ja) |
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JP6733104B2 (ja) | 2020-07-29 |
US20110157770A1 (en) | 2011-06-30 |
EP2517219A2 (en) | 2012-10-31 |
CN102893351A (zh) | 2013-01-23 |
TW201135769A (en) | 2011-10-16 |
WO2011084756A3 (en) | 2011-11-24 |
WO2011084756A2 (en) | 2011-07-14 |
US20150068001A1 (en) | 2015-03-12 |
EP2517219B1 (en) | 2020-10-07 |
US8817452B2 (en) | 2014-08-26 |
JP2018110245A (ja) | 2018-07-12 |
JP6370835B2 (ja) | 2018-08-08 |
JP2017001938A (ja) | 2017-01-05 |
EP2517219A4 (en) | 2014-05-21 |
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