JP2013508941A - 積層されたマルチダイパッケージにおけるシリコン貫通ビアの再構成 - Google Patents

積層されたマルチダイパッケージにおけるシリコン貫通ビアの再構成 Download PDF

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Publication number
JP2013508941A
JP2013508941A JP2012533445A JP2012533445A JP2013508941A JP 2013508941 A JP2013508941 A JP 2013508941A JP 2012533445 A JP2012533445 A JP 2012533445A JP 2012533445 A JP2012533445 A JP 2012533445A JP 2013508941 A JP2013508941 A JP 2013508941A
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JP
Japan
Prior art keywords
die
vias
integrated circuit
configuration
dies
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Pending
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JP2012533445A
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English (en)
Japanese (ja)
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JP2013508941A5 (https=
Inventor
ローランド・シュッツ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mosaid Technologies Inc
Original Assignee
Conversant Intellectual Property Management Inc
Mosaid Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Conversant Intellectual Property Management Inc, Mosaid Technologies Inc filed Critical Conversant Intellectual Property Management Inc
Publication of JP2013508941A publication Critical patent/JP2013508941A/ja
Publication of JP2013508941A5 publication Critical patent/JP2013508941A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/80—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout
    • G11C29/808—Masking faults in memories by using spares or by reconfiguring using programmable devices with improved layout using a flexible replacement scheme
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/297—Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips

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  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
JP2012533445A 2009-10-19 2010-10-19 積層されたマルチダイパッケージにおけるシリコン貫通ビアの再構成 Pending JP2013508941A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US25286509P 2009-10-19 2009-10-19
US61/252,865 2009-10-19
US12/773,340 2010-05-04
US12/773,340 US8604593B2 (en) 2009-10-19 2010-05-04 Reconfiguring through silicon vias in stacked multi-die packages
PCT/CA2010/001650 WO2011047470A1 (en) 2009-10-19 2010-10-19 Reconfiguring through silicon vias in stacked multi-die packages

Publications (2)

Publication Number Publication Date
JP2013508941A true JP2013508941A (ja) 2013-03-07
JP2013508941A5 JP2013508941A5 (https=) 2013-11-28

Family

ID=43878833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012533445A Pending JP2013508941A (ja) 2009-10-19 2010-10-19 積層されたマルチダイパッケージにおけるシリコン貫通ビアの再構成

Country Status (7)

Country Link
US (2) US8604593B2 (https=)
EP (1) EP2491589A4 (https=)
JP (1) JP2013508941A (https=)
KR (1) KR20120085650A (https=)
CN (1) CN102227806A (https=)
TW (1) TWI476889B (https=)
WO (1) WO2011047470A1 (https=)

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US9229887B2 (en) * 2008-02-19 2016-01-05 Micron Technology, Inc. Memory device with network on chip methods, apparatus, and systems
US7978721B2 (en) 2008-07-02 2011-07-12 Micron Technology Inc. Multi-serial interface stacked-die memory architecture
US8086913B2 (en) 2008-09-11 2011-12-27 Micron Technology, Inc. Methods, apparatus, and systems to repair memory
US9123552B2 (en) * 2010-03-30 2015-09-01 Micron Technology, Inc. Apparatuses enabling concurrent communication between an interface die and a plurality of dice stacks, interleaved conductive paths in stacked devices, and methods for forming and operating the same
US8362602B2 (en) * 2010-08-09 2013-01-29 Headway Technologies, Inc. Layered chip package and method of manufacturing same
US8916910B2 (en) * 2010-12-13 2014-12-23 Research Foundation Of State University Of New York Reconfigurable RF/digital hybrid 3D interconnect
KR101208962B1 (ko) * 2011-02-22 2012-12-06 에스케이하이닉스 주식회사 반도체 장치
US8624626B2 (en) 2011-11-14 2014-01-07 Taiwan Semiconductor Manufacturing Co., Ltd. 3D IC structure and method
US20130159587A1 (en) * 2011-12-15 2013-06-20 Aaron Nygren Interconnect Redundancy for Multi-Interconnect Device
US8933715B2 (en) 2012-04-08 2015-01-13 Elm Technology Corporation Configurable vertical integration
US9448947B2 (en) * 2012-06-01 2016-09-20 Qualcomm Incorporated Inter-chip memory interface structure
US9478502B2 (en) * 2012-07-26 2016-10-25 Micron Technology, Inc. Device identification assignment and total device number detection
US9026872B2 (en) * 2012-08-16 2015-05-05 Xilinx, Inc. Flexible sized die for use in multi-die integrated circuit
KR102058101B1 (ko) * 2012-12-20 2019-12-20 에스케이하이닉스 주식회사 반도체 집적회로
KR102190382B1 (ko) 2012-12-20 2020-12-11 삼성전자주식회사 반도체 패키지
US9612988B2 (en) * 2013-07-23 2017-04-04 International Business Machines Corporation Donor cores to improve integrated circuit yield
US20150155039A1 (en) * 2013-12-02 2015-06-04 Silicon Storage Technology, Inc. Three-Dimensional Flash NOR Memory System With Configurable Pins
US9245825B2 (en) 2014-01-23 2016-01-26 Sandisk Technologies Inc. I/O pin capacitance reduction using TSVS
US9501603B2 (en) 2014-09-05 2016-11-22 International Business Machines Corporation Integrated circuit design changes using through-silicon vias
US10002653B2 (en) 2014-10-28 2018-06-19 Nxp Usa, Inc. Die stack address bus having a programmable width
KR102290020B1 (ko) * 2015-06-05 2021-08-19 삼성전자주식회사 스택드 칩 구조에서 소프트 데이터 페일 분석 및 구제 기능을 제공하는 반도체 메모리 장치
US9871020B1 (en) * 2016-07-14 2018-01-16 Globalfoundries Inc. Through silicon via sharing in a 3D integrated circuit
US10249590B2 (en) 2017-06-06 2019-04-02 Globalfoundries Inc. Stacked dies using one or more interposers
US11055167B2 (en) * 2018-05-14 2021-07-06 Micron Technology, Inc. Channel-scope proximity disturb and defect remapping scheme for non-volatile memory
US10838831B2 (en) * 2018-05-14 2020-11-17 Micron Technology, Inc. Die-scope proximity disturb and defect remapping scheme for non-volatile memory
US11048597B2 (en) * 2018-05-14 2021-06-29 Micron Technology, Inc. Memory die remapping
CN112102862B (zh) * 2020-09-22 2023-03-07 武汉新芯集成电路制造有限公司 芯片结构、数据读取处理方法及芯片结构制造方法
US11226767B1 (en) * 2020-09-30 2022-01-18 Micron Technology, Inc. Apparatus with access control mechanism and methods for operating the same
US11468945B2 (en) * 2020-10-15 2022-10-11 Arm Limited 3D storage architecture with tier-specific controls
US20250209027A1 (en) * 2023-12-22 2025-06-26 Intel Corporation Resilient i/o interconnect

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JP2012142576A (ja) * 2010-12-28 2012-07-26 Samsung Electronics Co Ltd 貫通電極を有する積層構造の半導体装置、半導体メモリ装置、半導体メモリ・システム及びその動作方法

Also Published As

Publication number Publication date
CN102227806A (zh) 2011-10-26
EP2491589A1 (en) 2012-08-29
TW201126682A (en) 2011-08-01
US20140097891A1 (en) 2014-04-10
EP2491589A4 (en) 2015-07-22
US20110090004A1 (en) 2011-04-21
US9117685B2 (en) 2015-08-25
WO2011047470A1 (en) 2011-04-28
US8604593B2 (en) 2013-12-10
TWI476889B (zh) 2015-03-11
KR20120085650A (ko) 2012-08-01

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