JP2013507792A5 - - Google Patents
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- Publication number
- JP2013507792A5 JP2013507792A5 JP2012534275A JP2012534275A JP2013507792A5 JP 2013507792 A5 JP2013507792 A5 JP 2013507792A5 JP 2012534275 A JP2012534275 A JP 2012534275A JP 2012534275 A JP2012534275 A JP 2012534275A JP 2013507792 A5 JP2013507792 A5 JP 2013507792A5
- Authority
- JP
- Japan
- Prior art keywords
- grating reflector
- tunable laser
- wavelength selective
- silicon
- selective element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims 11
- 238000000034 method Methods 0.000 claims 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 8
- 229910052710 silicon Inorganic materials 0.000 claims 8
- 239000010703 silicon Substances 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 6
- 239000012212 insulator Substances 0.000 claims 5
- 230000003287 optical effect Effects 0.000 claims 4
- 238000000985 reflectance spectrum Methods 0.000 claims 4
- 150000001875 compounds Chemical class 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 239000002210 silicon-based material Substances 0.000 claims 2
- 230000003595 spectral effect Effects 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25113209P | 2009-10-13 | 2009-10-13 | |
| US25114309P | 2009-10-13 | 2009-10-13 | |
| US61/251,132 | 2009-10-13 | ||
| US61/251,143 | 2009-10-13 | ||
| PCT/US2010/052249 WO2011046898A1 (en) | 2009-10-13 | 2010-10-12 | Method and system for hybrid integration of a tunable laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013507792A JP2013507792A (ja) | 2013-03-04 |
| JP2013507792A5 true JP2013507792A5 (enExample) | 2013-11-28 |
Family
ID=43876470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012534275A Pending JP2013507792A (ja) | 2009-10-13 | 2010-10-12 | チューナブルレーザのハイブリッド集積のための方法及びシステム |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2489106B1 (enExample) |
| JP (1) | JP2013507792A (enExample) |
| KR (1) | KR101803982B1 (enExample) |
| TW (2) | TWI569548B (enExample) |
| WO (1) | WO2011046898A1 (enExample) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8368995B2 (en) | 2009-10-13 | 2013-02-05 | Skorpios Technologies, Inc. | Method and system for hybrid integration of an opto-electronic integrated circuit |
| US9318868B2 (en) | 2011-09-07 | 2016-04-19 | Skorpios Technologies, Inc. | Tunable hybrid laser with carrier-induced phase control |
| US9923105B2 (en) | 2013-10-09 | 2018-03-20 | Skorpios Technologies, Inc. | Processing of a direct-bandgap chip after bonding to a silicon photonic device |
| US11181688B2 (en) | 2009-10-13 | 2021-11-23 | Skorpios Technologies, Inc. | Integration of an unprocessed, direct-bandgap chip into a silicon photonic device |
| US8611388B2 (en) | 2009-10-13 | 2013-12-17 | Skorpios Technologies, Inc. | Method and system for heterogeneous substrate bonding of waveguide receivers |
| US8630326B2 (en) | 2009-10-13 | 2014-01-14 | Skorpios Technologies, Inc. | Method and system of heterogeneous substrate bonding for photonic integration |
| US9316785B2 (en) | 2013-10-09 | 2016-04-19 | Skorpios Technologies, Inc. | Integration of an unprocessed, direct-bandgap chip into a silicon photonic device |
| US8615025B2 (en) | 2009-10-13 | 2013-12-24 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser |
| US8559470B2 (en) | 2009-10-13 | 2013-10-15 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser and a phase modulator |
| US8605766B2 (en) | 2009-10-13 | 2013-12-10 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser and a mach zehnder modulator |
| US8867578B2 (en) | 2009-10-13 | 2014-10-21 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser for a cable TV transmitter |
| US9922967B2 (en) | 2010-12-08 | 2018-03-20 | Skorpios Technologies, Inc. | Multilevel template assisted wafer bonding |
| US9977188B2 (en) | 2011-08-30 | 2018-05-22 | Skorpios Technologies, Inc. | Integrated photonics mode expander |
| WO2013109955A1 (en) * | 2012-01-18 | 2013-07-25 | Skorpios Technologies, Inc. | Vertical integration of cmos electronics with photonic devices |
| US9461770B2 (en) | 2013-09-12 | 2016-10-04 | Skorpios Technologies, Inc. | Method and system for floating grid transceiver |
| JP6241919B2 (ja) * | 2013-09-30 | 2017-12-06 | 住友電工デバイス・イノベーション株式会社 | 光学半導体デバイス |
| GB201319207D0 (en) * | 2013-10-31 | 2013-12-18 | Ibm | Photonic circuit device with on-chip optical gain measurement structures |
| CN106068471B (zh) | 2014-03-07 | 2019-06-07 | 斯考皮欧技术有限公司 | 定向半导体波导耦合器 |
| US9664855B2 (en) | 2014-03-07 | 2017-05-30 | Skorpios Technologies, Inc. | Wide shoulder, high order mode filter for thick-silicon waveguides |
| US10003173B2 (en) | 2014-04-23 | 2018-06-19 | Skorpios Technologies, Inc. | Widely tunable laser control |
| EP3149522A4 (en) | 2014-05-27 | 2018-02-21 | Skorpios Technologies, Inc. | Waveguide mode expander using amorphous silicon |
| DE112015003234T5 (de) | 2014-07-11 | 2017-04-20 | Acacia Communications, Inc. | Integrierter abstimmbarer Hochleistungslaser mit einstellbaren Ausgängen |
| EP3051638A1 (en) * | 2015-01-27 | 2016-08-03 | Huawei Technologies Co., Ltd. | Tunable laser and method of tuning a laser |
| US10132996B2 (en) | 2015-04-20 | 2018-11-20 | Skorpios Technologies, Inc. | Back side via vertical output couplers |
| CN108732667B (zh) * | 2017-04-17 | 2021-01-05 | 华为技术有限公司 | 一种超结构光栅和可调谐激光器 |
| US10649148B2 (en) | 2017-10-25 | 2020-05-12 | Skorpios Technologies, Inc. | Multistage spot size converter in silicon photonics |
| CN112470050A (zh) * | 2018-06-29 | 2021-03-09 | 3M创新有限公司 | 具有空间调制折射率区域的光学波导 |
| SG10201811773XA (en) * | 2018-12-28 | 2020-07-29 | Advanced Micro Foundry Pte Ltd | Improvements in or relating to a distributed feedback laser device for photonics integrated circuit and a method of manufacture |
| US11360263B2 (en) | 2019-01-31 | 2022-06-14 | Skorpios Technologies. Inc. | Self-aligned spot size converter |
| KR20230015318A (ko) * | 2020-04-03 | 2023-01-31 | 오토모티브 코우얼리션 포 트래픽 세이프티, 인크. | 광범위하게 튜닝 가능한 단일 모드 방출 반도체 레이저 |
| KR102687553B1 (ko) * | 2020-07-23 | 2024-07-24 | 한국전자통신연구원 | 광 도파로 소자 및 그를 포함하는 레이저 장치 |
| JP2024504035A (ja) * | 2020-12-30 | 2024-01-30 | アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド | 直接接合構造体 |
| CN115621841A (zh) * | 2021-07-15 | 2023-01-17 | 苏州旭创科技有限公司 | 外腔式激光器及其调谐方法 |
| WO2024084693A1 (ja) * | 2022-10-21 | 2024-04-25 | 三菱電機株式会社 | 半導体レーザ光源装置 |
| CN115755290B (zh) * | 2022-11-03 | 2024-05-17 | 北京大学 | 边发射激光芯片与硅光芯片中光波导的耦合结构及方法 |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2325334B (en) * | 1998-07-10 | 1999-04-14 | Bookham Technology Ltd | External cavity laser |
| KR100277695B1 (ko) * | 1998-09-12 | 2001-02-01 | 정선종 | 에스 오 아이 광도파로를 이용한 하이브리드 광집적회로용 기판 제조방법 |
| US6192058B1 (en) * | 1998-09-18 | 2001-02-20 | Sarnoff Corporation | Multiwavelength actively mode-locked external cavity semiconductor laser |
| WO2002031557A1 (en) * | 2000-10-06 | 2002-04-18 | Microcoating Technologies, Inc. | Optical waveguides and integrated optical subsystems on-a-chip |
| US7087179B2 (en) * | 2000-12-11 | 2006-08-08 | Applied Materials, Inc. | Optical integrated circuits (ICs) |
| US6853671B2 (en) * | 2001-06-13 | 2005-02-08 | Intel Corporation | Method and apparatus for tuning a laser with a Bragg grating in a semiconductor substrate |
| US20030015711A1 (en) * | 2001-07-20 | 2003-01-23 | Motorola, Inc. | Structure and method for fabricating semiconductor structures and devices utilizing the formation of a complaint substrate with an intermetallic layer |
| JP2003172835A (ja) * | 2001-12-07 | 2003-06-20 | National Institute Of Advanced Industrial & Technology | 導波路を有する光学素子及びその製造方法 |
| JP4169516B2 (ja) * | 2002-02-07 | 2008-10-22 | コニカミノルタホールディングス株式会社 | 光スイッチ |
| WO2004038871A2 (en) | 2002-08-22 | 2004-05-06 | Xponent Photonics Inc. | Grating-stabilized semiconductor laser |
| JP3905819B2 (ja) * | 2002-11-01 | 2007-04-18 | 日本電信電話株式会社 | 光モジュール |
| WO2004095084A2 (en) * | 2003-04-23 | 2004-11-04 | Siophcal, Inc. | Sub-micron planar lightwave devices formed on an soi optical platform |
| KR20040098421A (ko) * | 2003-05-15 | 2004-11-20 | 한국전자통신연구원 | 광대역 파장 가변 추출 격자 분포 궤환 레이저 다이오드 |
| JP4402912B2 (ja) * | 2003-07-23 | 2010-01-20 | 日本電信電話株式会社 | 半導体波長可変レーザおよび波長可変レーザモジュール |
| US7257142B2 (en) * | 2004-03-29 | 2007-08-14 | Intel Corporation | Semi-integrated designs for external cavity tunable lasers |
| JP2005303077A (ja) * | 2004-04-13 | 2005-10-27 | Fujitsu Ltd | 波長可変レーザ装置 |
| JP2006269543A (ja) * | 2005-03-22 | 2006-10-05 | Oki Electric Ind Co Ltd | 波長可変素子 |
| US8106379B2 (en) * | 2006-04-26 | 2012-01-31 | The Regents Of The University Of California | Hybrid silicon evanescent photodetectors |
| US7542490B2 (en) * | 2006-04-25 | 2009-06-02 | R. J. Dwayne Miller | Reduction of surface heating effects in nonlinear crystals for high power frequency conversion of laser light |
| US20100329298A1 (en) * | 2006-10-24 | 2010-12-30 | Koninklijke Philips Electronics N.V. | Intracavity frequency-converted solid-state laser for the visible wavelength region |
| US20080181558A1 (en) * | 2007-01-31 | 2008-07-31 | Hartwell Peter G | Electronic and optical circuit integration through wafer bonding |
| US8040933B2 (en) * | 2008-03-10 | 2011-10-18 | Sumitomo Electric Industries, Ltd. | Diffraction grating device, laser diode, and wavelength tunable filter |
| CN101741007B (zh) * | 2008-11-04 | 2011-07-27 | 北京大学 | 金属键合硅基激光器的制备方法 |
-
2010
- 2010-10-12 KR KR1020127012439A patent/KR101803982B1/ko active Active
- 2010-10-12 EP EP10823920.3A patent/EP2489106B1/en active Active
- 2010-10-12 WO PCT/US2010/052249 patent/WO2011046898A1/en not_active Ceased
- 2010-10-12 JP JP2012534275A patent/JP2013507792A/ja active Pending
- 2010-10-13 TW TW099134939A patent/TWI569548B/zh active
- 2010-10-13 TW TW105134037A patent/TWI631783B/zh active
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