KR101803982B1 - 파장 가변 레이저의 하이브리드 집적 방법 및 시스템 - Google Patents

파장 가변 레이저의 하이브리드 집적 방법 및 시스템 Download PDF

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KR101803982B1
KR101803982B1 KR1020127012439A KR20127012439A KR101803982B1 KR 101803982 B1 KR101803982 B1 KR 101803982B1 KR 1020127012439 A KR1020127012439 A KR 1020127012439A KR 20127012439 A KR20127012439 A KR 20127012439A KR 101803982 B1 KR101803982 B1 KR 101803982B1
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KR20120089721A (ko
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존 엠. 달러사쎄
스티븐 비. 크라설릭
윌리엄 코즐로브스키
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스코르피오스 테크놀러지스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
    • H01S3/10053—Phase control
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0235—Method for mounting laser chips
    • H01S5/02355—Fixing laser chips on mounts
    • H01S5/0237—Fixing laser chips on mounts by soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
    • H01S5/02446—Cooling being separate from the laser chip cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
    • H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/14—External cavity lasers
    • H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
    • H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Optical Integrated Circuits (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Lasers (AREA)
KR1020127012439A 2009-10-13 2010-10-12 파장 가변 레이저의 하이브리드 집적 방법 및 시스템 Active KR101803982B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US25113209P 2009-10-13 2009-10-13
US25114309P 2009-10-13 2009-10-13
US61/251,132 2009-10-13
US61/251,143 2009-10-13
PCT/US2010/052249 WO2011046898A1 (en) 2009-10-13 2010-10-12 Method and system for hybrid integration of a tunable laser

Publications (2)

Publication Number Publication Date
KR20120089721A KR20120089721A (ko) 2012-08-13
KR101803982B1 true KR101803982B1 (ko) 2017-12-01

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EP (1) EP2489106B1 (enExample)
JP (1) JP2013507792A (enExample)
KR (1) KR101803982B1 (enExample)
TW (2) TWI569548B (enExample)
WO (1) WO2011046898A1 (enExample)

Families Citing this family (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8368995B2 (en) 2009-10-13 2013-02-05 Skorpios Technologies, Inc. Method and system for hybrid integration of an opto-electronic integrated circuit
US9318868B2 (en) 2011-09-07 2016-04-19 Skorpios Technologies, Inc. Tunable hybrid laser with carrier-induced phase control
US9923105B2 (en) 2013-10-09 2018-03-20 Skorpios Technologies, Inc. Processing of a direct-bandgap chip after bonding to a silicon photonic device
US11181688B2 (en) 2009-10-13 2021-11-23 Skorpios Technologies, Inc. Integration of an unprocessed, direct-bandgap chip into a silicon photonic device
US8611388B2 (en) 2009-10-13 2013-12-17 Skorpios Technologies, Inc. Method and system for heterogeneous substrate bonding of waveguide receivers
US8630326B2 (en) 2009-10-13 2014-01-14 Skorpios Technologies, Inc. Method and system of heterogeneous substrate bonding for photonic integration
US9316785B2 (en) 2013-10-09 2016-04-19 Skorpios Technologies, Inc. Integration of an unprocessed, direct-bandgap chip into a silicon photonic device
US8615025B2 (en) 2009-10-13 2013-12-24 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser
US8559470B2 (en) 2009-10-13 2013-10-15 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser and a phase modulator
US8605766B2 (en) 2009-10-13 2013-12-10 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser and a mach zehnder modulator
US8867578B2 (en) 2009-10-13 2014-10-21 Skorpios Technologies, Inc. Method and system for hybrid integration of a tunable laser for a cable TV transmitter
US9922967B2 (en) 2010-12-08 2018-03-20 Skorpios Technologies, Inc. Multilevel template assisted wafer bonding
US9977188B2 (en) 2011-08-30 2018-05-22 Skorpios Technologies, Inc. Integrated photonics mode expander
WO2013109955A1 (en) * 2012-01-18 2013-07-25 Skorpios Technologies, Inc. Vertical integration of cmos electronics with photonic devices
US9461770B2 (en) 2013-09-12 2016-10-04 Skorpios Technologies, Inc. Method and system for floating grid transceiver
JP6241919B2 (ja) * 2013-09-30 2017-12-06 住友電工デバイス・イノベーション株式会社 光学半導体デバイス
GB201319207D0 (en) * 2013-10-31 2013-12-18 Ibm Photonic circuit device with on-chip optical gain measurement structures
CN106068471B (zh) 2014-03-07 2019-06-07 斯考皮欧技术有限公司 定向半导体波导耦合器
US9664855B2 (en) 2014-03-07 2017-05-30 Skorpios Technologies, Inc. Wide shoulder, high order mode filter for thick-silicon waveguides
US10003173B2 (en) 2014-04-23 2018-06-19 Skorpios Technologies, Inc. Widely tunable laser control
EP3149522A4 (en) 2014-05-27 2018-02-21 Skorpios Technologies, Inc. Waveguide mode expander using amorphous silicon
DE112015003234T5 (de) 2014-07-11 2017-04-20 Acacia Communications, Inc. Integrierter abstimmbarer Hochleistungslaser mit einstellbaren Ausgängen
EP3051638A1 (en) * 2015-01-27 2016-08-03 Huawei Technologies Co., Ltd. Tunable laser and method of tuning a laser
US10132996B2 (en) 2015-04-20 2018-11-20 Skorpios Technologies, Inc. Back side via vertical output couplers
CN108732667B (zh) * 2017-04-17 2021-01-05 华为技术有限公司 一种超结构光栅和可调谐激光器
US10649148B2 (en) 2017-10-25 2020-05-12 Skorpios Technologies, Inc. Multistage spot size converter in silicon photonics
CN112470050A (zh) * 2018-06-29 2021-03-09 3M创新有限公司 具有空间调制折射率区域的光学波导
SG10201811773XA (en) * 2018-12-28 2020-07-29 Advanced Micro Foundry Pte Ltd Improvements in or relating to a distributed feedback laser device for photonics integrated circuit and a method of manufacture
US11360263B2 (en) 2019-01-31 2022-06-14 Skorpios Technologies. Inc. Self-aligned spot size converter
KR20230015318A (ko) * 2020-04-03 2023-01-31 오토모티브 코우얼리션 포 트래픽 세이프티, 인크. 광범위하게 튜닝 가능한 단일 모드 방출 반도체 레이저
KR102687553B1 (ko) * 2020-07-23 2024-07-24 한국전자통신연구원 광 도파로 소자 및 그를 포함하는 레이저 장치
JP2024504035A (ja) * 2020-12-30 2024-01-30 アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド 直接接合構造体
CN115621841A (zh) * 2021-07-15 2023-01-17 苏州旭创科技有限公司 外腔式激光器及其调谐方法
WO2024084693A1 (ja) * 2022-10-21 2024-04-25 三菱電機株式会社 半導体レーザ光源装置
CN115755290B (zh) * 2022-11-03 2024-05-17 北京大学 边发射激光芯片与硅光芯片中光波导的耦合结构及方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002520858A (ja) * 1998-07-10 2002-07-09 ブッカム・テクノロジー・ピーエルシー 外部空洞型レーザー

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100277695B1 (ko) * 1998-09-12 2001-02-01 정선종 에스 오 아이 광도파로를 이용한 하이브리드 광집적회로용 기판 제조방법
US6192058B1 (en) * 1998-09-18 2001-02-20 Sarnoff Corporation Multiwavelength actively mode-locked external cavity semiconductor laser
WO2002031557A1 (en) * 2000-10-06 2002-04-18 Microcoating Technologies, Inc. Optical waveguides and integrated optical subsystems on-a-chip
US7087179B2 (en) * 2000-12-11 2006-08-08 Applied Materials, Inc. Optical integrated circuits (ICs)
US6853671B2 (en) * 2001-06-13 2005-02-08 Intel Corporation Method and apparatus for tuning a laser with a Bragg grating in a semiconductor substrate
US20030015711A1 (en) * 2001-07-20 2003-01-23 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing the formation of a complaint substrate with an intermetallic layer
JP2003172835A (ja) * 2001-12-07 2003-06-20 National Institute Of Advanced Industrial & Technology 導波路を有する光学素子及びその製造方法
JP4169516B2 (ja) * 2002-02-07 2008-10-22 コニカミノルタホールディングス株式会社 光スイッチ
WO2004038871A2 (en) 2002-08-22 2004-05-06 Xponent Photonics Inc. Grating-stabilized semiconductor laser
JP3905819B2 (ja) * 2002-11-01 2007-04-18 日本電信電話株式会社 光モジュール
WO2004095084A2 (en) * 2003-04-23 2004-11-04 Siophcal, Inc. Sub-micron planar lightwave devices formed on an soi optical platform
KR20040098421A (ko) * 2003-05-15 2004-11-20 한국전자통신연구원 광대역 파장 가변 추출 격자 분포 궤환 레이저 다이오드
JP4402912B2 (ja) * 2003-07-23 2010-01-20 日本電信電話株式会社 半導体波長可変レーザおよび波長可変レーザモジュール
US7257142B2 (en) * 2004-03-29 2007-08-14 Intel Corporation Semi-integrated designs for external cavity tunable lasers
JP2005303077A (ja) * 2004-04-13 2005-10-27 Fujitsu Ltd 波長可変レーザ装置
JP2006269543A (ja) * 2005-03-22 2006-10-05 Oki Electric Ind Co Ltd 波長可変素子
US8106379B2 (en) * 2006-04-26 2012-01-31 The Regents Of The University Of California Hybrid silicon evanescent photodetectors
US7542490B2 (en) * 2006-04-25 2009-06-02 R. J. Dwayne Miller Reduction of surface heating effects in nonlinear crystals for high power frequency conversion of laser light
US20100329298A1 (en) * 2006-10-24 2010-12-30 Koninklijke Philips Electronics N.V. Intracavity frequency-converted solid-state laser for the visible wavelength region
US20080181558A1 (en) * 2007-01-31 2008-07-31 Hartwell Peter G Electronic and optical circuit integration through wafer bonding
US8040933B2 (en) * 2008-03-10 2011-10-18 Sumitomo Electric Industries, Ltd. Diffraction grating device, laser diode, and wavelength tunable filter
CN101741007B (zh) * 2008-11-04 2011-07-27 北京大学 金属键合硅基激光器的制备方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002520858A (ja) * 1998-07-10 2002-07-09 ブッカム・テクノロジー・ピーエルシー 外部空洞型レーザー

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JP2013507792A (ja) 2013-03-04
EP2489106A4 (en) 2018-01-17
TWI631783B (zh) 2018-08-01
EP2489106A1 (en) 2012-08-22
TW201140975A (en) 2011-11-16
TWI569548B (zh) 2017-02-01
KR20120089721A (ko) 2012-08-13
WO2011046898A1 (en) 2011-04-21
TW201707319A (zh) 2017-02-16
EP2489106B1 (en) 2021-02-17

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