TWI569548B - 用於可調式雷射的混合整合之方法與系統 - Google Patents
用於可調式雷射的混合整合之方法與系統 Download PDFInfo
- Publication number
- TWI569548B TWI569548B TW099134939A TW99134939A TWI569548B TW I569548 B TWI569548 B TW I569548B TW 099134939 A TW099134939 A TW 099134939A TW 99134939 A TW99134939 A TW 99134939A TW I569548 B TWI569548 B TW I569548B
- Authority
- TW
- Taiwan
- Prior art keywords
- grating reflector
- substrate
- layer
- wavelength
- semiconductor
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 76
- 230000010354 integration Effects 0.000 title description 17
- 239000004065 semiconductor Substances 0.000 claims description 138
- 239000000463 material Substances 0.000 claims description 81
- 230000003287 optical effect Effects 0.000 claims description 76
- 239000000758 substrate Substances 0.000 claims description 74
- 150000001875 compounds Chemical class 0.000 claims description 62
- 229910052732 germanium Inorganic materials 0.000 claims description 51
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 51
- 238000001228 spectrum Methods 0.000 claims description 23
- 230000005855 radiation Effects 0.000 claims description 15
- 230000003595 spectral effect Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 description 53
- 239000002184 metal Substances 0.000 description 52
- 230000006870 function Effects 0.000 description 19
- 235000012431 wafers Nutrition 0.000 description 18
- 230000008878 coupling Effects 0.000 description 13
- 238000010168 coupling process Methods 0.000 description 13
- 238000005859 coupling reaction Methods 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 13
- 239000000956 alloy Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 229910045601 alloy Inorganic materials 0.000 description 11
- 230000008859 change Effects 0.000 description 11
- 125000006850 spacer group Chemical group 0.000 description 11
- 230000008901 benefit Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 9
- 238000012986 modification Methods 0.000 description 9
- 230000004048 modification Effects 0.000 description 9
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 9
- 238000004891 communication Methods 0.000 description 7
- 229910052797 bismuth Inorganic materials 0.000 description 6
- 238000002310 reflectometry Methods 0.000 description 6
- 229910052715 tantalum Inorganic materials 0.000 description 6
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000005496 eutectics Effects 0.000 description 5
- 238000012827 research and development Methods 0.000 description 5
- 230000027756 respiratory electron transport chain Effects 0.000 description 5
- 229910052707 ruthenium Inorganic materials 0.000 description 5
- 238000012546 transfer Methods 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 150000002739 metals Chemical class 0.000 description 4
- 238000000985 reflectance spectrum Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 210000001520 comb Anatomy 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 230000003750 conditioning effect Effects 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 229910001092 metal group alloy Inorganic materials 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000003199 nucleic acid amplification method Methods 0.000 description 3
- 230000005693 optoelectronics Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000001994 activation Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000001427 coherent effect Effects 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 229910000078 germane Inorganic materials 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000010587 phase diagram Methods 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000013598 vector Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- -1 InPd Chemical class 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000004308 accommodation Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 238000005842 biochemical reaction Methods 0.000 description 1
- BJQHLKABXJIVAM-UHFFFAOYSA-N bis(2-ethylhexyl) phthalate Chemical group CCCCC(CC)COC(=O)C1=CC=CC=C1C(=O)OCC(CC)CCCC BJQHLKABXJIVAM-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 230000001010 compromised effect Effects 0.000 description 1
- 238000004320 controlled atmosphere Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000001066 destructive effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000013461 intermediate chemical Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 239000004038 photonic crystal Substances 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000000678 plasma activation Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/14—Semiconductor lasers with special structural design for lasing in a specific polarisation mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10053—Phase control
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0235—Method for mounting laser chips
- H01S5/02355—Fixing laser chips on mounts
- H01S5/0237—Fixing laser chips on mounts by soldering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02438—Characterized by cooling of elements other than the laser chip, e.g. an optical element being part of an external cavity or a collimating lens
- H01S5/02446—Cooling being separate from the laser chip cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1003—Waveguide having a modified shape along the axis, e.g. branched, curved, tapered, voids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1028—Coupling to elements in the cavity, e.g. coupling to waveguides adjacent the active region, e.g. forward coupled [DFC] structures
- H01S5/1032—Coupling to elements comprising an optical axis that is not aligned with the optical axis of the active region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
- H01S5/142—External cavity lasers using a wavelength selective device, e.g. a grating or etalon which comprises an additional resonator
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Optical Integrated Circuits (AREA)
- Semiconductor Lasers (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US25113209P | 2009-10-13 | 2009-10-13 | |
| US25114309P | 2009-10-13 | 2009-10-13 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201140975A TW201140975A (en) | 2011-11-16 |
| TWI569548B true TWI569548B (zh) | 2017-02-01 |
Family
ID=43876470
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099134939A TWI569548B (zh) | 2009-10-13 | 2010-10-13 | 用於可調式雷射的混合整合之方法與系統 |
| TW105134037A TWI631783B (zh) | 2009-10-13 | 2010-10-13 | 用於可調式雷射的混合整合之方法與系統 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105134037A TWI631783B (zh) | 2009-10-13 | 2010-10-13 | 用於可調式雷射的混合整合之方法與系統 |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP2489106B1 (enExample) |
| JP (1) | JP2013507792A (enExample) |
| KR (1) | KR101803982B1 (enExample) |
| TW (2) | TWI569548B (enExample) |
| WO (1) | WO2011046898A1 (enExample) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8368995B2 (en) | 2009-10-13 | 2013-02-05 | Skorpios Technologies, Inc. | Method and system for hybrid integration of an opto-electronic integrated circuit |
| US9318868B2 (en) | 2011-09-07 | 2016-04-19 | Skorpios Technologies, Inc. | Tunable hybrid laser with carrier-induced phase control |
| US9923105B2 (en) | 2013-10-09 | 2018-03-20 | Skorpios Technologies, Inc. | Processing of a direct-bandgap chip after bonding to a silicon photonic device |
| US11181688B2 (en) | 2009-10-13 | 2021-11-23 | Skorpios Technologies, Inc. | Integration of an unprocessed, direct-bandgap chip into a silicon photonic device |
| US8611388B2 (en) | 2009-10-13 | 2013-12-17 | Skorpios Technologies, Inc. | Method and system for heterogeneous substrate bonding of waveguide receivers |
| US8630326B2 (en) | 2009-10-13 | 2014-01-14 | Skorpios Technologies, Inc. | Method and system of heterogeneous substrate bonding for photonic integration |
| US9316785B2 (en) | 2013-10-09 | 2016-04-19 | Skorpios Technologies, Inc. | Integration of an unprocessed, direct-bandgap chip into a silicon photonic device |
| US8615025B2 (en) | 2009-10-13 | 2013-12-24 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser |
| US8559470B2 (en) | 2009-10-13 | 2013-10-15 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser and a phase modulator |
| US8605766B2 (en) | 2009-10-13 | 2013-12-10 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser and a mach zehnder modulator |
| US8867578B2 (en) | 2009-10-13 | 2014-10-21 | Skorpios Technologies, Inc. | Method and system for hybrid integration of a tunable laser for a cable TV transmitter |
| US9922967B2 (en) | 2010-12-08 | 2018-03-20 | Skorpios Technologies, Inc. | Multilevel template assisted wafer bonding |
| US9977188B2 (en) | 2011-08-30 | 2018-05-22 | Skorpios Technologies, Inc. | Integrated photonics mode expander |
| WO2013109955A1 (en) * | 2012-01-18 | 2013-07-25 | Skorpios Technologies, Inc. | Vertical integration of cmos electronics with photonic devices |
| US9461770B2 (en) | 2013-09-12 | 2016-10-04 | Skorpios Technologies, Inc. | Method and system for floating grid transceiver |
| JP6241919B2 (ja) * | 2013-09-30 | 2017-12-06 | 住友電工デバイス・イノベーション株式会社 | 光学半導体デバイス |
| GB201319207D0 (en) * | 2013-10-31 | 2013-12-18 | Ibm | Photonic circuit device with on-chip optical gain measurement structures |
| CN106068471B (zh) | 2014-03-07 | 2019-06-07 | 斯考皮欧技术有限公司 | 定向半导体波导耦合器 |
| US9664855B2 (en) | 2014-03-07 | 2017-05-30 | Skorpios Technologies, Inc. | Wide shoulder, high order mode filter for thick-silicon waveguides |
| US10003173B2 (en) | 2014-04-23 | 2018-06-19 | Skorpios Technologies, Inc. | Widely tunable laser control |
| EP3149522A4 (en) | 2014-05-27 | 2018-02-21 | Skorpios Technologies, Inc. | Waveguide mode expander using amorphous silicon |
| DE112015003234T5 (de) | 2014-07-11 | 2017-04-20 | Acacia Communications, Inc. | Integrierter abstimmbarer Hochleistungslaser mit einstellbaren Ausgängen |
| EP3051638A1 (en) * | 2015-01-27 | 2016-08-03 | Huawei Technologies Co., Ltd. | Tunable laser and method of tuning a laser |
| US10132996B2 (en) | 2015-04-20 | 2018-11-20 | Skorpios Technologies, Inc. | Back side via vertical output couplers |
| CN108732667B (zh) * | 2017-04-17 | 2021-01-05 | 华为技术有限公司 | 一种超结构光栅和可调谐激光器 |
| US10649148B2 (en) | 2017-10-25 | 2020-05-12 | Skorpios Technologies, Inc. | Multistage spot size converter in silicon photonics |
| CN112470050A (zh) * | 2018-06-29 | 2021-03-09 | 3M创新有限公司 | 具有空间调制折射率区域的光学波导 |
| SG10201811773XA (en) * | 2018-12-28 | 2020-07-29 | Advanced Micro Foundry Pte Ltd | Improvements in or relating to a distributed feedback laser device for photonics integrated circuit and a method of manufacture |
| US11360263B2 (en) | 2019-01-31 | 2022-06-14 | Skorpios Technologies. Inc. | Self-aligned spot size converter |
| KR20230015318A (ko) * | 2020-04-03 | 2023-01-31 | 오토모티브 코우얼리션 포 트래픽 세이프티, 인크. | 광범위하게 튜닝 가능한 단일 모드 방출 반도체 레이저 |
| KR102687553B1 (ko) * | 2020-07-23 | 2024-07-24 | 한국전자통신연구원 | 광 도파로 소자 및 그를 포함하는 레이저 장치 |
| JP2024504035A (ja) * | 2020-12-30 | 2024-01-30 | アデイア セミコンダクター ボンディング テクノロジーズ インコーポレイテッド | 直接接合構造体 |
| CN115621841A (zh) * | 2021-07-15 | 2023-01-17 | 苏州旭创科技有限公司 | 外腔式激光器及其调谐方法 |
| WO2024084693A1 (ja) * | 2022-10-21 | 2024-04-25 | 三菱電機株式会社 | 半導体レーザ光源装置 |
| CN115755290B (zh) * | 2022-11-03 | 2024-05-17 | 北京大学 | 边发射激光芯片与硅光芯片中光波导的耦合结构及方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6101210A (en) * | 1998-07-10 | 2000-08-08 | Bookham Technology Plc | External cavity laser |
| TW543143B (en) * | 2001-07-20 | 2003-07-21 | Motorola Inc | Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate with an intermetallic layer |
| US20050226284A1 (en) * | 2004-04-13 | 2005-10-13 | Fujitsu Limited | Wavelength tunable laser of small size |
| TW200845520A (en) * | 2006-10-24 | 2008-11-16 | Koninkl Philips Electronics Nv | Intracavity frequency-converted solid-state laser for the visible wavelength region |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100277695B1 (ko) * | 1998-09-12 | 2001-02-01 | 정선종 | 에스 오 아이 광도파로를 이용한 하이브리드 광집적회로용 기판 제조방법 |
| US6192058B1 (en) * | 1998-09-18 | 2001-02-20 | Sarnoff Corporation | Multiwavelength actively mode-locked external cavity semiconductor laser |
| WO2002031557A1 (en) * | 2000-10-06 | 2002-04-18 | Microcoating Technologies, Inc. | Optical waveguides and integrated optical subsystems on-a-chip |
| US7087179B2 (en) * | 2000-12-11 | 2006-08-08 | Applied Materials, Inc. | Optical integrated circuits (ICs) |
| US6853671B2 (en) * | 2001-06-13 | 2005-02-08 | Intel Corporation | Method and apparatus for tuning a laser with a Bragg grating in a semiconductor substrate |
| JP2003172835A (ja) * | 2001-12-07 | 2003-06-20 | National Institute Of Advanced Industrial & Technology | 導波路を有する光学素子及びその製造方法 |
| JP4169516B2 (ja) * | 2002-02-07 | 2008-10-22 | コニカミノルタホールディングス株式会社 | 光スイッチ |
| WO2004038871A2 (en) | 2002-08-22 | 2004-05-06 | Xponent Photonics Inc. | Grating-stabilized semiconductor laser |
| JP3905819B2 (ja) * | 2002-11-01 | 2007-04-18 | 日本電信電話株式会社 | 光モジュール |
| WO2004095084A2 (en) * | 2003-04-23 | 2004-11-04 | Siophcal, Inc. | Sub-micron planar lightwave devices formed on an soi optical platform |
| KR20040098421A (ko) * | 2003-05-15 | 2004-11-20 | 한국전자통신연구원 | 광대역 파장 가변 추출 격자 분포 궤환 레이저 다이오드 |
| JP4402912B2 (ja) * | 2003-07-23 | 2010-01-20 | 日本電信電話株式会社 | 半導体波長可変レーザおよび波長可変レーザモジュール |
| US7257142B2 (en) * | 2004-03-29 | 2007-08-14 | Intel Corporation | Semi-integrated designs for external cavity tunable lasers |
| JP2006269543A (ja) * | 2005-03-22 | 2006-10-05 | Oki Electric Ind Co Ltd | 波長可変素子 |
| US8106379B2 (en) * | 2006-04-26 | 2012-01-31 | The Regents Of The University Of California | Hybrid silicon evanescent photodetectors |
| US7542490B2 (en) * | 2006-04-25 | 2009-06-02 | R. J. Dwayne Miller | Reduction of surface heating effects in nonlinear crystals for high power frequency conversion of laser light |
| US20080181558A1 (en) * | 2007-01-31 | 2008-07-31 | Hartwell Peter G | Electronic and optical circuit integration through wafer bonding |
| US8040933B2 (en) * | 2008-03-10 | 2011-10-18 | Sumitomo Electric Industries, Ltd. | Diffraction grating device, laser diode, and wavelength tunable filter |
| CN101741007B (zh) * | 2008-11-04 | 2011-07-27 | 北京大学 | 金属键合硅基激光器的制备方法 |
-
2010
- 2010-10-12 KR KR1020127012439A patent/KR101803982B1/ko active Active
- 2010-10-12 EP EP10823920.3A patent/EP2489106B1/en active Active
- 2010-10-12 WO PCT/US2010/052249 patent/WO2011046898A1/en not_active Ceased
- 2010-10-12 JP JP2012534275A patent/JP2013507792A/ja active Pending
- 2010-10-13 TW TW099134939A patent/TWI569548B/zh active
- 2010-10-13 TW TW105134037A patent/TWI631783B/zh active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6101210A (en) * | 1998-07-10 | 2000-08-08 | Bookham Technology Plc | External cavity laser |
| TW543143B (en) * | 2001-07-20 | 2003-07-21 | Motorola Inc | Structure and method for fabricating semiconductor structures and devices utilizing the formation of a compliant substrate with an intermetallic layer |
| US20050226284A1 (en) * | 2004-04-13 | 2005-10-13 | Fujitsu Limited | Wavelength tunable laser of small size |
| TW200845520A (en) * | 2006-10-24 | 2008-11-16 | Koninkl Philips Electronics Nv | Intracavity frequency-converted solid-state laser for the visible wavelength region |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101803982B1 (ko) | 2017-12-01 |
| JP2013507792A (ja) | 2013-03-04 |
| EP2489106A4 (en) | 2018-01-17 |
| TWI631783B (zh) | 2018-08-01 |
| EP2489106A1 (en) | 2012-08-22 |
| TW201140975A (en) | 2011-11-16 |
| KR20120089721A (ko) | 2012-08-13 |
| WO2011046898A1 (en) | 2011-04-21 |
| TW201707319A (zh) | 2017-02-16 |
| EP2489106B1 (en) | 2021-02-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI569548B (zh) | 用於可調式雷射的混合整合之方法與系統 | |
| US8615025B2 (en) | Method and system for hybrid integration of a tunable laser | |
| US12444723B2 (en) | Heterogeneous bonding for photonic integration | |
| US8368995B2 (en) | Method and system for hybrid integration of an opto-electronic integrated circuit | |
| US8559470B2 (en) | Method and system for hybrid integration of a tunable laser and a phase modulator | |
| US8605766B2 (en) | Method and system for hybrid integration of a tunable laser and a mach zehnder modulator | |
| Szelag et al. | Hybrid III–V/silicon technology for laser integration on a 200-mm fully CMOS-compatible silicon photonics platform | |
| US8867578B2 (en) | Method and system for hybrid integration of a tunable laser for a cable TV transmitter | |
| US9318868B2 (en) | Tunable hybrid laser with carrier-induced phase control | |
| EP2539979B1 (en) | Laser light coupling into SOI CMOS photonic integrated circuit | |
| US20090078963A1 (en) | Nano-optoelectronic chip structure and method | |
| EP2369696A1 (en) | Surface-Emitting semiconductor laser and method of manufacture thereof | |
| JP6572209B2 (ja) | 光学デバイスおよび光学デバイスの製造方法 | |
| Roelkens et al. | Hybrid silicon lasers | |
| Van Thourhout et al. | Heterogeneously integrated SOI compound semiconductor photonics | |
| CN117013364A (zh) | 一种宽光谱片上集成外腔可调谐激光器 | |
| Hattasan | GaSb/Silicon-on-insulator heterogeneous photonic integrated circuits for the short-wave infrared |