JP2013506981A5 - - Google Patents
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- Publication number
- JP2013506981A5 JP2013506981A5 JP2012531403A JP2012531403A JP2013506981A5 JP 2013506981 A5 JP2013506981 A5 JP 2013506981A5 JP 2012531403 A JP2012531403 A JP 2012531403A JP 2012531403 A JP2012531403 A JP 2012531403A JP 2013506981 A5 JP2013506981 A5 JP 2013506981A5
- Authority
- JP
- Japan
- Prior art keywords
- thermoelectric
- layer
- layers
- main group
- generating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000463 material Substances 0.000 claims description 26
- 230000000737 periodic effect Effects 0.000 claims description 9
- 229910052797 bismuth Inorganic materials 0.000 claims description 8
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 5
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 5
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 3
- MRPWWVMHWSDJEH-UHFFFAOYSA-N antimony telluride Chemical compound [SbH3+3].[SbH3+3].[TeH2-2].[TeH2-2].[TeH2-2] MRPWWVMHWSDJEH-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 2
- 238000004544 sputter deposition Methods 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- OMEPJWROJCQMMU-UHFFFAOYSA-N selanylidenebismuth;selenium Chemical compound [Se].[Bi]=[Se].[Bi]=[Se] OMEPJWROJCQMMU-UHFFFAOYSA-N 0.000 claims 1
- 238000007740 vapor deposition Methods 0.000 claims 1
- 238000005496 tempering Methods 0.000 description 4
- 229910052714 tellurium Inorganic materials 0.000 description 3
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102009045208A DE102009045208A1 (de) | 2009-09-30 | 2009-09-30 | Thermoelektrisches Bauelement und Verfahren zum Herstellen eines thermoelektrischen Bauelementes |
| DE102009045208.7 | 2009-09-30 | ||
| PCT/EP2010/064433 WO2011039240A2 (de) | 2009-09-30 | 2010-09-29 | Verfahren zum herstellen eines thermoelektrischen bauelementes und thermoelektrisches bauelement |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2013506981A JP2013506981A (ja) | 2013-02-28 |
| JP2013506981A5 true JP2013506981A5 (enExample) | 2013-11-14 |
Family
ID=43630009
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2012531403A Pending JP2013506981A (ja) | 2009-09-30 | 2010-09-29 | 熱電構造体の製造方法と熱電構造体 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20130068274A1 (enExample) |
| EP (1) | EP2483940A2 (enExample) |
| JP (1) | JP2013506981A (enExample) |
| DE (1) | DE102009045208A1 (enExample) |
| WO (1) | WO2011039240A2 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2790474B1 (en) | 2013-04-09 | 2016-03-16 | Harman Becker Automotive Systems GmbH | Thermoelectric cooler/heater integrated in printed circuit board |
| EP2887409B1 (en) | 2013-12-17 | 2016-06-15 | Airbus Defence and Space GmbH | Micromachined energy harvester with a thermoelectric generator and method for manufacturing the same |
| JP6730597B2 (ja) * | 2016-07-12 | 2020-07-29 | 富士通株式会社 | 熱電変換材料及び熱電変換装置 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3526699B2 (ja) * | 1996-07-16 | 2004-05-17 | 本田技研工業株式会社 | 熱電材料 |
| AU6783598A (en) | 1997-03-31 | 1998-10-22 | Research Triangle Institute | Thin-film thermoelectric device and fabrication method of same |
| US6060657A (en) * | 1998-06-24 | 2000-05-09 | Massachusetts Institute Of Technology | Lead-chalcogenide superlattice structures |
| US6096964A (en) * | 1998-11-13 | 2000-08-01 | Hi-Z Technology, Inc. | Quantum well thermoelectric material on thin flexible substrate |
| JP4903307B2 (ja) * | 1998-11-13 | 2012-03-28 | エイチアイ−ゼット・テクノロジー・インク | 極薄基板上の量子井戸熱電材料 |
| US6710238B1 (en) * | 1999-06-02 | 2004-03-23 | Asahi Kasei Kabushiki Kaisha | Thermoelectric material and method for manufacturing the same |
| AU2003230920A1 (en) * | 2002-04-15 | 2003-11-03 | Nextreme Thermal Solutions, Inc. | Thermoelectric device utilizing double-sided peltier junctions and method of making the device |
| US6987037B2 (en) * | 2003-05-07 | 2006-01-17 | Micron Technology, Inc. | Strained Si/SiGe structures by ion implantation |
| US20070028956A1 (en) * | 2005-04-12 | 2007-02-08 | Rama Venkatasubramanian | Methods of forming thermoelectric devices including superlattice structures of alternating layers with heterogeneous periods and related devices |
| US7514726B2 (en) * | 2006-03-21 | 2009-04-07 | The United States Of America As Represented By The Aministrator Of The National Aeronautics And Space Administration | Graded index silicon geranium on lattice matched silicon geranium semiconductor alloy |
-
2009
- 2009-09-30 DE DE102009045208A patent/DE102009045208A1/de not_active Withdrawn
-
2010
- 2010-09-29 EP EP10771687A patent/EP2483940A2/de not_active Withdrawn
- 2010-09-29 WO PCT/EP2010/064433 patent/WO2011039240A2/de not_active Ceased
- 2010-09-29 JP JP2012531403A patent/JP2013506981A/ja active Pending
- 2010-09-29 US US13/498,863 patent/US20130068274A1/en not_active Abandoned
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