JP2013506981A - 熱電構造体の製造方法と熱電構造体 - Google Patents

熱電構造体の製造方法と熱電構造体 Download PDF

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JP2013506981A
JP2013506981A JP2012531403A JP2012531403A JP2013506981A JP 2013506981 A JP2013506981 A JP 2013506981A JP 2012531403 A JP2012531403 A JP 2012531403A JP 2012531403 A JP2012531403 A JP 2012531403A JP 2013506981 A JP2013506981 A JP 2013506981A
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thermoelectric
layer
layers
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main group
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Japanese (ja)
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JP2013506981A5 (enExample
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ヌルヌス・ヨアヒム
ベトナー・ハラルト
シューベルト・アクセル
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Micropelt GmbH
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Micropelt GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/80—Constructional details
    • H10N10/85—Thermoelectric active materials
    • H10N10/857—Thermoelectric active materials comprising compositions changing continuously or discontinuously inside the material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
    • H10N10/01—Manufacture or treatment

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
  • Powder Metallurgy (AREA)
JP2012531403A 2009-09-30 2010-09-29 熱電構造体の製造方法と熱電構造体 Pending JP2013506981A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009045208A DE102009045208A1 (de) 2009-09-30 2009-09-30 Thermoelektrisches Bauelement und Verfahren zum Herstellen eines thermoelektrischen Bauelementes
DE102009045208.7 2009-09-30
PCT/EP2010/064433 WO2011039240A2 (de) 2009-09-30 2010-09-29 Verfahren zum herstellen eines thermoelektrischen bauelementes und thermoelektrisches bauelement

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JP2013506981A true JP2013506981A (ja) 2013-02-28
JP2013506981A5 JP2013506981A5 (enExample) 2013-11-14

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JP2012531403A Pending JP2013506981A (ja) 2009-09-30 2010-09-29 熱電構造体の製造方法と熱電構造体

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US (1) US20130068274A1 (enExample)
EP (1) EP2483940A2 (enExample)
JP (1) JP2013506981A (enExample)
DE (1) DE102009045208A1 (enExample)
WO (1) WO2011039240A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018010932A (ja) * 2016-07-12 2018-01-18 富士通株式会社 熱電変換材料及び熱電変換装置

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2790474B1 (en) 2013-04-09 2016-03-16 Harman Becker Automotive Systems GmbH Thermoelectric cooler/heater integrated in printed circuit board
EP2887409B1 (en) 2013-12-17 2016-06-15 Airbus Defence and Space GmbH Micromachined energy harvester with a thermoelectric generator and method for manufacturing the same

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1032354A (ja) * 1996-07-16 1998-02-03 Honda Motor Co Ltd 熱電材料
WO2000076006A1 (fr) * 1999-06-02 2000-12-14 Asahi Kasei Kabushiki Kaisha Materiau thermoelectrique et procede de fabrication associe
JP2002530874A (ja) * 1998-11-13 2002-09-17 エイチアイ−ゼット・テクノロジー・インク 極薄基板上の量子井戸熱電材料

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU6783598A (en) 1997-03-31 1998-10-22 Research Triangle Institute Thin-film thermoelectric device and fabrication method of same
US6060657A (en) * 1998-06-24 2000-05-09 Massachusetts Institute Of Technology Lead-chalcogenide superlattice structures
US6096964A (en) * 1998-11-13 2000-08-01 Hi-Z Technology, Inc. Quantum well thermoelectric material on thin flexible substrate
AU2003230920A1 (en) * 2002-04-15 2003-11-03 Nextreme Thermal Solutions, Inc. Thermoelectric device utilizing double-sided peltier junctions and method of making the device
US6987037B2 (en) * 2003-05-07 2006-01-17 Micron Technology, Inc. Strained Si/SiGe structures by ion implantation
US20070028956A1 (en) * 2005-04-12 2007-02-08 Rama Venkatasubramanian Methods of forming thermoelectric devices including superlattice structures of alternating layers with heterogeneous periods and related devices
US7514726B2 (en) * 2006-03-21 2009-04-07 The United States Of America As Represented By The Aministrator Of The National Aeronautics And Space Administration Graded index silicon geranium on lattice matched silicon geranium semiconductor alloy

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1032354A (ja) * 1996-07-16 1998-02-03 Honda Motor Co Ltd 熱電材料
JP2002530874A (ja) * 1998-11-13 2002-09-17 エイチアイ−ゼット・テクノロジー・インク 極薄基板上の量子井戸熱電材料
WO2000076006A1 (fr) * 1999-06-02 2000-12-14 Asahi Kasei Kabushiki Kaisha Materiau thermoelectrique et procede de fabrication associe

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2018010932A (ja) * 2016-07-12 2018-01-18 富士通株式会社 熱電変換材料及び熱電変換装置

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Publication number Publication date
DE102009045208A1 (de) 2011-04-14
WO2011039240A3 (de) 2011-08-11
WO2011039240A2 (de) 2011-04-07
EP2483940A2 (de) 2012-08-08
US20130068274A1 (en) 2013-03-21

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