JP2013506865A - ポジ型光像形成性底面反射防止コーティング - Google Patents
ポジ型光像形成性底面反射防止コーティング Download PDFInfo
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- JP2013506865A JP2013506865A JP2012531508A JP2012531508A JP2013506865A JP 2013506865 A JP2013506865 A JP 2013506865A JP 2012531508 A JP2012531508 A JP 2012531508A JP 2012531508 A JP2012531508 A JP 2012531508A JP 2013506865 A JP2013506865 A JP 2013506865A
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- SBQIJPBUMNWUKN-UHFFFAOYSA-M diphenyliodanium;trifluoromethanesulfonate Chemical compound [O-]S(=O)(=O)C(F)(F)F.C=1C=CC=CC=1[I+]C1=CC=CC=C1 SBQIJPBUMNWUKN-UHFFFAOYSA-M 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 125000003438 dodecyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- ODQWQRRAPPTVAG-GZTJUZNOSA-N doxepin Chemical compound C1OC2=CC=CC=C2C(=C/CCN(C)C)/C2=CC=CC=C21 ODQWQRRAPPTVAG-GZTJUZNOSA-N 0.000 description 1
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- 125000001033 ether group Chemical group 0.000 description 1
- GFUIDHWFLMPAGY-UHFFFAOYSA-N ethyl 2-hydroxy-2-methylpropanoate Chemical compound CCOC(=O)C(C)(C)O GFUIDHWFLMPAGY-UHFFFAOYSA-N 0.000 description 1
- XJTWZSZWOJKDJL-UHFFFAOYSA-N ethyl 2-hydroxy-4-[2-(2-methyl-3-phenylprop-2-enoyl)iminohydrazinyl]benzoate Chemical compound C1=C(O)C(C(=O)OCC)=CC=C1NN=NC(=O)C(C)=CC1=CC=CC=C1 XJTWZSZWOJKDJL-UHFFFAOYSA-N 0.000 description 1
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- 125000001160 methoxycarbonyl group Chemical group [H]C([H])([H])OC(*)=O 0.000 description 1
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- 238000002156 mixing Methods 0.000 description 1
- 125000001421 myristyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- XTAZYLNFDRKIHJ-UHFFFAOYSA-N n,n-dioctyloctan-1-amine Chemical compound CCCCCCCCN(CCCCCCCC)CCCCCCCC XTAZYLNFDRKIHJ-UHFFFAOYSA-N 0.000 description 1
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- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- SEEYREPSKCQBBF-UHFFFAOYSA-N n-methylmaleimide Chemical compound CN1C(=O)C=CC1=O SEEYREPSKCQBBF-UHFFFAOYSA-N 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- QVEIBLDXZNGPHR-UHFFFAOYSA-N naphthalene-1,4-dione;diazide Chemical compound [N-]=[N+]=[N-].[N-]=[N+]=[N-].C1=CC=C2C(=O)C=CC(=O)C2=C1 QVEIBLDXZNGPHR-UHFFFAOYSA-N 0.000 description 1
- 125000001624 naphthyl group Chemical group 0.000 description 1
- YCWSUKQGVSGXJO-NTUHNPAUSA-N nifuroxazide Chemical group C1=CC(O)=CC=C1C(=O)N\N=C\C1=CC=C([N+]([O-])=O)O1 YCWSUKQGVSGXJO-NTUHNPAUSA-N 0.000 description 1
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 description 1
- IZJVVXCHJIQVOL-UHFFFAOYSA-N nitro(phenyl)methanesulfonic acid Chemical class OS(=O)(=O)C([N+]([O-])=O)C1=CC=CC=C1 IZJVVXCHJIQVOL-UHFFFAOYSA-N 0.000 description 1
- ZCYXXKJEDCHMGH-UHFFFAOYSA-N nonane Chemical compound CCCC[CH]CCCC ZCYXXKJEDCHMGH-UHFFFAOYSA-N 0.000 description 1
- UMRZSTCPUPJPOJ-KNVOCYPGSA-N norbornane Chemical class C1C[C@H]2CC[C@@H]1C2 UMRZSTCPUPJPOJ-KNVOCYPGSA-N 0.000 description 1
- 125000002868 norbornyl group Chemical group C12(CCC(CC1)C2)* 0.000 description 1
- BKIMMITUMNQMOS-UHFFFAOYSA-N normal nonane Natural products CCCCCCCCC BKIMMITUMNQMOS-UHFFFAOYSA-N 0.000 description 1
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 1
- 125000002347 octyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000000962 organic group Chemical group 0.000 description 1
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- 150000004866 oxadiazoles Chemical class 0.000 description 1
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- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 125000005561 phenanthryl group Chemical group 0.000 description 1
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- 229920003023 plastic Polymers 0.000 description 1
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- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 1
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- 125000003367 polycyclic group Chemical group 0.000 description 1
- 239000004926 polymethyl methacrylate Substances 0.000 description 1
- 150000008442 polyphenolic compounds Polymers 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 229940116423 propylene glycol diacetate Drugs 0.000 description 1
- 125000004309 pyranyl group Chemical group O1C(C=CC=C1)* 0.000 description 1
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 description 1
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 description 1
- 125000000719 pyrrolidinyl group Chemical group 0.000 description 1
- 125000002943 quinolinyl group Chemical group N1=C(C=CC2=CC=CC=C12)* 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
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- 238000007152 ring opening metathesis polymerisation reaction Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000011877 solvent mixture Substances 0.000 description 1
- 238000000391 spectroscopic ellipsometry Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- PWEBUXCTKOWPCW-UHFFFAOYSA-N squaric acid Chemical compound OC1=C(O)C(=O)C1=O PWEBUXCTKOWPCW-UHFFFAOYSA-N 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 125000005346 substituted cycloalkyl group Chemical group 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 150000003460 sulfonic acids Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000010557 suspension polymerization reaction Methods 0.000 description 1
- 239000011975 tartaric acid Substances 0.000 description 1
- 235000002906 tartaric acid Nutrition 0.000 description 1
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 150000003557 thiazoles Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003918 triazines Chemical class 0.000 description 1
- IMFACGCPASFAPR-UHFFFAOYSA-N tributylamine Chemical compound CCCCN(CCCC)CCCC IMFACGCPASFAPR-UHFFFAOYSA-N 0.000 description 1
- SWZDQOUHBYYPJD-UHFFFAOYSA-N tridodecylamine Chemical compound CCCCCCCCCCCCN(CCCCCCCCCCCC)CCCCCCCCCCCC SWZDQOUHBYYPJD-UHFFFAOYSA-N 0.000 description 1
- ITMCEJHCFYSIIV-UHFFFAOYSA-N triflic acid Chemical compound OS(=O)(=O)C(F)(F)F ITMCEJHCFYSIIV-UHFFFAOYSA-N 0.000 description 1
- 125000005591 trimellitate group Chemical group 0.000 description 1
- 125000000026 trimethylsilyl group Chemical group [H]C([H])([H])[Si]([*])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- MDTPTXSNPBAUHX-UHFFFAOYSA-M trimethylsulfanium;hydroxide Chemical compound [OH-].C[S+](C)C MDTPTXSNPBAUHX-UHFFFAOYSA-M 0.000 description 1
- KOFQUBYAUWJFIT-UHFFFAOYSA-M triphenylsulfanium;hydroxide Chemical compound [OH-].C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 KOFQUBYAUWJFIT-UHFFFAOYSA-M 0.000 description 1
- WLOQLWBIJZDHET-UHFFFAOYSA-N triphenylsulfonium Chemical compound C1=CC=CC=C1[S+](C=1C=CC=CC=1)C1=CC=CC=C1 WLOQLWBIJZDHET-UHFFFAOYSA-N 0.000 description 1
- 239000012953 triphenylsulfonium Substances 0.000 description 1
- YFTHZRPMJXBUME-UHFFFAOYSA-N tripropylamine Chemical compound CCCN(CCC)CCC YFTHZRPMJXBUME-UHFFFAOYSA-N 0.000 description 1
- UTCOSYZEYALTGJ-UHFFFAOYSA-N tris(2-tert-butylphenyl)sulfanium Chemical compound CC(C)(C)C1=CC=CC=C1[S+](C=1C(=CC=CC=1)C(C)(C)C)C1=CC=CC=C1C(C)(C)C UTCOSYZEYALTGJ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- KOZCZZVUFDCZGG-UHFFFAOYSA-N vinyl benzoate Chemical compound C=COC(=O)C1=CC=CC=C1 KOZCZZVUFDCZGG-UHFFFAOYSA-N 0.000 description 1
- 229920001567 vinyl ester resin Polymers 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Materials For Photolithography (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
Abstract
Description
本発明は、新規の吸収性光像形成性で水性アルカリ現像可能なポジ型像形成性反射防止コーティング組成物であって、(i)コーティング溶剤中に可溶性でかつ発色団、任意にフッ素化基、架橋可能な基、例えばヒドロキシル及び/またはカルボキシル部分、任意に及び解裂性基を含むポリマーA、但し、前記の解裂性基は、水性アルカリ性溶液中へのポリマーの可溶性を促進するのを助ける官能基を酸または熱条件下に生成するものであり; (ii)少なくとも一種の光酸発生剤; (iii)架橋剤; (iv)任意に、熱酸発生剤; (v)現像の前に水性アルカリ性溶液中に可溶性のポリマーB、但し前記ポリマーBはポリマーAと不混和性であり、かつコーティング溶剤中に可溶性であり; 及び(vi)コーティング溶剤組成物; 及び任意に(vii)クエンチャを含む、前記コーティング組成物に関する。
攪拌機、熱電対及び還流冷却器を備えた250mL丸底フラスコ中に、窒素下に、2−エチルアダマンチルメタクリレート(EAdMA、7.75g)、4−ヒドロキシフェニルメタクリレート(PQMA、16.69g)、2,2,3,3,3−ペンタフルオロプロピルメタクリレート(PFPMA,6.81g)、2,2’−アゾビス(2−メチルプロピオニトリル)(AIBN、6.25g)、及びテトラヒドロフラン(THF、87.50g)を加え、そして攪拌して溶解させた。この混合物を5時間65℃に加熱し、30分間室温に冷却し、次いでヘキサン類(875mL)中に析出させた。この析出物を真空濾過によって集め、THF(85mL)中に溶解し、そしてヘキサン類(875mL)中にもう一度析出させた。最後に、析出物を80mLのメタノール中に再溶解し、そして水(875mL)中で析出させた。析出物を真空濾過によって集めそして45℃で乾燥して白色の固形物(23.14g、74%)を得た。ポリマーの分子量及びNMR組成を表1に示す。
攪拌機、熱電対及び還流冷却器を備えた250mL丸底フラスコ中に、窒素下に、3,5−ビス(ヘキサフルオロ−2−ヒドロキシ−2−プロピル)シクロヘキシルメタクリレート(MA−3,5−HFA−CHOH、8.28g)、4−ヒドロキシフェニルメタクリレート(PQMA、11.78g)、2,2,3,3,3−ペンタフルオロプロピルメタクリレート(PFPMA,6.02g)、2,2’−アゾビス(2−メチルプロピオニトリル)(AIBN、3.91g)、及びテトラヒドロフラン(THF、70.00g)を加え、そして攪拌して溶解させた。この混合物を5時間65℃に加熱し、15分間冷却し、メタノール(3mL)で急冷し、更に室温まで冷却し、次いでヘキサン類(750mL)中に析出させた。その析出物を真空濾過によって集め、THF(85mL)中に溶解し、そしてヘキサン類(750mL)中にもう一度析出させた。最後に、その析出物を70gのメタノール中に再溶解し、そして水(750mL)中で析出させた。その析出物を真空濾過によって集めそして45℃で乾燥して白色の固形物(22.19g、85%)を得た。このポリマーのn&k値は、193nmで1.71及び0.38であった。ポリマーの分子量及びNMRを表1に示す。
0.3388gのポリヒドロキシスチレン及び0.27gの例1からのポリマーをPGMEA中に混合することによって15gの溶液を調製した。この溶液を8インチケイ素ウェハ上にコーティングし、60分間180℃でベークした。次いで、このコーティングされたウェハを静的接触角測定に使用した。同様にして、表1に示す各ポリマーを使用して他のポリマー溶液を調製した。ポリマーBの粘度に依存して、ポリマーAに対するそれの相対重量比を変えた。全ての場合において、適当な重量のポリマーBを、(60nmFTを与えた)ポリマーAと同じrpmで100nmFTを与えるように、取った。静的接触角(SCA)測定は、種々のポリマーの分離能力を検証するために行った。親水性ポリマー単独の接触角と、加えて、自己分離性フッ素化疎水性ポリマーの接触角を測定した。結果は、これらの二つのポリマー間に層の分離があることを示し、これは、これら二種のポリマー間に十分な化学的相違があることを示唆する。該DBARC組成物の接触角は、実験誤差内で、該組成物に使用した個別の疎水性ポリマーAの接触角と同一であり、このことは、この疎水性ポリマーが、DBARCフィルム中で上部層を形成していることを示す。また、これらの充填親水性ポリマーは、現像剤可溶性であることが確認された。結果を表1に示す。DBARC組成物中の疎水性ポリマーAと親水性ポリマーBとの接触角の違いはΔSCAとして示す。
HPQMA: ポリ(4−ヒドロキシフェニル)メタクリレート
AMMA: 9−アントラセニルメチルメタクリレート
MMA: メチルメタクリレート
ポリマーA: 親水性ポリマー
ポリマーB: 疎水性ポリマー
DBARC: 現像可能な反射防止コーティング
ΔSCA: ポリマーAまたはDBARCの接触角−ポリマーBの接触角
SCA: 静的接触角
例1のポリマー1.32g、ポリ(ヒドロキシスチレン−co−メチルメタクリレート)0.22g、1,2,4−トリス(4−ビニルオキシブチル)シクロヘキサントリカルボキシレート0.35g、光酸発生剤としてのビス[(トリフェニル)スルホニウム]パーフルオロブタンスルホネート7.1g、テトラメチルアンモニウムデオキシコレート0.093g、PGMEA46.96g、PGME39.13g及びEL11.74gをプラスチックボトル中で混合し、そして室温で6時間混ぜ続け、そして以下に示すようにリソグラフィを評価した。
8インチケイ素ウェハを、120℃で35秒間、HMDSで下塗りした。次いで、下塗りしたウェハを例5で調製した調合物でコーティングし、そして170℃で60秒間ベークして70nmの膜厚を得た。次いで、AZ(登録商標)DX6850PTMKrFフォトレジスト(AZ(登録商標)Electronic USA Corp.70,Meister Ave.,Somerville,NJから入手可能)を、前記の硬化した膜の上にコーティングし、そして100℃/90秒のベークに付し及び110℃/90秒で露光後ベークした。図形を、AZ300MIFTM現像剤溶液(AZ(登録商標)Electronic USA Corp.70,Meister Ave.,Somerville,NJから入手可能)を用いて60秒間現像した。1/2輪帯照明を有する0.65NA FPA3000EX5ツールを、6%HTPSMマスクと共に使用した。150、200、300nm密集ライン/スペースの図形及び220nm孤立ラインの図形を評価した。結果を表2に示す。
0.52gのポリ(4−ビニルフェノール)(ポリマーB)、0.4gのPQMA/AMMA/MA−BTHB−OHポリマー(例1、ポリマーA)、0.23gの1,2,4−トリス(4−ビニルオキシブチル)シクロヘキサントリカルボキシレート、光酸発生剤としての0.065gのビス[(トリフェニル)スルホニウム]パーフルオロブタンスルホネート、及びプロピレングリコールモノメチルエーテル(9.53g)/乳酸エチル(0.65g)の混合物を含むDBARC調合物を8インチケイ素ウェハ上にコーティングし、180℃/60秒間ベークし、そしてコンタクトマスクを用いて、フラッド露光(flood exposure)により深紫外線源254nmフィルタ&193nmフィルタに別々に曝し50mJの全線量を供した。193nm&254nm露光において、DBARC像が少なくとも10mJ/cm2の感光度をもって解像されたことが確認された。
Claims (15)
- 水性アルカリ性溶液中で現像することによってパターンを形成することができる光像形成性反射防止コーティング組成物であって、
(i)コーティング溶剤中に可溶性であって、発色団、フッ素化基、架橋性部分、任意に及び、水性アルカリ性溶液中へのポリマーの可溶性を助ける官能基(好ましくは酸または熱に不安定な基)を酸または熱条件下に生成する解裂性基を含むポリマーA、及び;
(ii)少なくとも一種の光酸発生剤;
(iii)架橋剤;
(iv)任意に、熱酸発生剤;
(v)現像の前に水性アルカリ性溶液中に可溶性であり、かつポリマーAと不混和性で、コーティング溶剤中に可溶性のポリマーB;
(vi)コーティング溶剤組成物、及び
(vii)任意に、クエンチャ、
を含む、前記光像形成性反射防止コーティング組成物。 - 架橋性部分がヒドロキシル及び/またはカルボキシルである、請求項1の反射防止コーティング組成物。
- ポリマーAにおいて、ヒドロキシ基がヒドロキシ芳香族であり、好ましくはヒドロキシフェニル、ヒドロキシナフチル、及びヒドロキシアントラシルから選択される、請求項1または2の反射防止コーティング組成物。
- ポリマーAにおいて、フッ素化基が、フルオロアルコール、パーフルオロアルキル、及び部分フッ素化アルキル基から選択される、請求項1〜3のいずれか一つの反射防止コーティング組成物。
- ポリマーBが、ヒドロキシフェニルと、アクリレートから誘導されるモノマー性単位とを含む、請求項1〜5のいずれか一つの反射防止コーティング組成物。
- ポリマーBが、ポリマーAよりも小さい水接触角を有し、ここで好ましくは、ポリマーAとポリマーBとの水接触角の差異が5〜25度の範囲である、請求項1〜6のいずれか一つの反射防止コーティング組成物。
- 光像形成性反射防止コーティング組成物に像を形成する方法であって、
a)請求項1〜7のいずれか一つの底面光像形成性反射防止コーティング組成物のコーティングを基材上に形成し;
b)ポリマーAが分離してポリマーBの上に層を形成するように、反射防止コーティングをベークし;
c)底面コーティングの上に上面フォトレジスト層のコーティングを供し;
d)フォトレジスト及び底面コーティング層を、同じ波長の化学線で像様露光し;
e)基材上でフォトレジスト及び底面コーティング層を露光後ベークし; 及び
f)フォトレジスト及び底面コーティング層を水性アルカリ性溶液で現像して、フォトレジスト層及び反射防止コーティング層にパターンを形成する、
ことを含む前記方法。 - 反射防止コーティング組成物のコーティングの後かつそれのベークの前に、エッジビードを除去するステップを更に含む、請求項8の方法。
- 反射防止コーティングが、フォトレジスト層のコーティングの前のベークステップの後に有機溶剤及び水性アルカリ性溶液中に不溶性となり、そしてフォトレジスト及び底面反射防止コーティング層の現像の前の化学線による露光の後に水性アルカリ性溶液中に可溶性になる、請求項8または9の方法。
- 現像剤がテトラメチルアンモニウムヒドロキシドを含む、請求項8〜10のいずれか一つの方法。
- 水性アルカリ性溶液中で現像することによってパターンを形成することができる光像形成性反射防止コーティング組成物であって、
(i)コーティング溶剤中に可溶性であって、発色団、架橋性部分、任意に及び、水性アルカリ性溶液中でのポリマーの可溶性を助ける官能基を酸または熱条件下に生成する解裂性基を含む、ポリマーA、及び;
(ii)少なくとも一種の光酸発生剤;
(iii)架橋剤;
(iv)任意に、熱酸発生剤;
(v)現像の前に水性アルカリ性溶液中に可溶性であり、かつポリマーAと不混和性で、コーティング溶剤中に可溶性のポリマーB; 及び
(vi)コーティング溶剤組成物、及び
(v)任意に、クエンチャ、
を含む、光像形成性反射防止コーティング組成物。 - ポリマーAとポリマーBとの水接触角の差異が5〜25度の範囲であり、及びポリマーAが、ポリマーBよりも高い接触角を有する、請求項12の反射防止コーティング組成物。
- ポリマーAの解裂性基が酸または熱に不安定な基である、請求項12または13の反射防止コーティング組成物。
- 架橋性部分がヒドロキシル及び/またはカルボキシルである、請求項12〜14のいずれか一つの反射防止コーティング組成物。
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US20110076626A1 (en) | 2011-03-31 |
EP2483745A1 (en) | 2012-08-08 |
KR101709369B1 (ko) | 2017-02-22 |
CN102483575A (zh) | 2012-05-30 |
WO2011039560A1 (en) | 2011-04-07 |
KR20120099406A (ko) | 2012-09-10 |
TW201111913A (en) | 2011-04-01 |
US8632948B2 (en) | 2014-01-21 |
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Free format text: JAPANESE INTERMEDIATE CODE: R250 |