JP2013504188A - 変換手段体、オプトエレクトロニクス半導体チップ及びオプトエレクトロニクス半導体チップの製造方法 - Google Patents

変換手段体、オプトエレクトロニクス半導体チップ及びオプトエレクトロニクス半導体チップの製造方法 Download PDF

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JP2013504188A
JP2013504188A JP2012527269A JP2012527269A JP2013504188A JP 2013504188 A JP2013504188 A JP 2013504188A JP 2012527269 A JP2012527269 A JP 2012527269A JP 2012527269 A JP2012527269 A JP 2012527269A JP 2013504188 A JP2013504188 A JP 2013504188A
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conversion means
means body
semiconductor chip
shore
matrix material
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JP2012527269A
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Japanese (ja)
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JP2013504188A5 (https=
Inventor
ブラウネ ベアト
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8511—Wavelength conversion means characterised by their material, e.g. binder
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent materials, e.g. electroluminescent or chemiluminescent
    • C09K11/08—Luminescent materials, e.g. electroluminescent or chemiluminescent containing inorganic luminescent materials
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional [2D] radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional [2D] radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H05B33/145—Arrangements of the electroluminescent material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8516—Wavelength conversion means having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer or wavelength conversion layer with a concentration gradient
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
JP2012527269A 2009-09-04 2010-08-10 変換手段体、オプトエレクトロニクス半導体チップ及びオプトエレクトロニクス半導体チップの製造方法 Pending JP2013504188A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009040148.2 2009-09-04
DE102009040148A DE102009040148A1 (de) 2009-09-04 2009-09-04 Konversionsmittelkörper, optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
PCT/EP2010/061648 WO2011026716A1 (de) 2009-09-04 2010-08-10 Konversionsmittelkörper, optoelektronischer halbleiterchip und verfahren zur herstellung eines optoelektronischen halbleiterchips

Publications (2)

Publication Number Publication Date
JP2013504188A true JP2013504188A (ja) 2013-02-04
JP2013504188A5 JP2013504188A5 (https=) 2013-05-30

Family

ID=42983504

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012527269A Pending JP2013504188A (ja) 2009-09-04 2010-08-10 変換手段体、オプトエレクトロニクス半導体チップ及びオプトエレクトロニクス半導体チップの製造方法

Country Status (8)

Country Link
US (1) US9055655B2 (https=)
EP (1) EP2474203B1 (https=)
JP (1) JP2013504188A (https=)
KR (1) KR20120062725A (https=)
CN (1) CN102498751B (https=)
DE (1) DE102009040148A1 (https=)
TW (1) TWI470839B (https=)
WO (1) WO2011026716A1 (https=)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110284866A1 (en) * 2005-01-11 2011-11-24 Tran Chuong A Light-emitting diode (led) structure having a wavelength-converting layer and method of producing
CN102714263B (zh) * 2010-02-25 2015-11-25 韩国莱太柘晶电株式会社 发光二极管及其制造方法
DE102010049312B4 (de) 2010-10-22 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines Konversionsplättchens und Konversionsplättchen
WO2014156696A1 (ja) * 2013-03-28 2014-10-02 日東電工株式会社 光半導体装置の製造方法、システム、製造条件決定装置および製造管理装置
DE102014107473A1 (de) * 2014-05-27 2015-12-03 Osram Opto Semiconductors Gmbh Konverterelement zur Konvertierung einer Wellenlänge, optoelektronisches Bauelement mit Konverterelement und Verfahren zum Herstellen eines Konverterelements
US10497838B2 (en) * 2018-04-12 2019-12-03 Osram Opto Semiconductors Gmbh Method for producing an optic device, optic device and assembly comprising such an optic device
DE102021124691A1 (de) 2021-09-23 2023-03-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung von optischen elementen, verfahren zur herstellung von strahlungsemittierenden halbleiterbauteilen, optisches element und strahlungsemittierendes halbleiterbauteil
DE102022122981A1 (de) * 2022-09-09 2024-03-14 Ams-Osram International Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
DE102023108532A1 (de) * 2023-04-03 2024-10-10 Ams-Osram International Gmbh Verfahren zur herstellung eines optoelektronischen bauelements und optoelektronisches bauelement

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003142737A (ja) * 2001-08-22 2003-05-16 Nichia Chem Ind Ltd 発光装置
JP2007019096A (ja) * 2005-07-05 2007-01-25 Toyoda Gosei Co Ltd 発光装置及びその製造方法
JP2007146008A (ja) * 2005-11-28 2007-06-14 Kyocera Corp 蛍光体及び波長変換器並びに発光装置
WO2008104936A2 (en) * 2007-02-26 2008-09-04 Koninklijke Philips Electronics N.V. Led with phosphor tile and overmolded phosphor in lens
WO2009069671A1 (ja) * 2007-11-29 2009-06-04 Nichia Corporation 発光装置及びその製造方法
JP2009188207A (ja) * 2008-02-06 2009-08-20 Nitto Denko Corp 光半導体素子封止用樹脂シートおよび光半導体装置
JP2009530437A (ja) * 2006-03-15 2009-08-27 エルジー イノテック カンパニー リミテッド 蓄光シート
JP2009235368A (ja) * 2007-04-10 2009-10-15 Shin Etsu Chem Co Ltd 蛍光体含有接着性シリコーン組成物、該組成物からなる組成物シート、及び該シートを使用する発光装置の製造方法

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Publication number Priority date Publication date Assignee Title
US7285913B2 (en) 2003-08-29 2007-10-23 Matsushita Electric Industrial Co., Ltd. Plasma display device having blue phosphor layers with alkaline earth metal aluminate containing molybdenum or tungsten
US20050211991A1 (en) * 2004-03-26 2005-09-29 Kyocera Corporation Light-emitting apparatus and illuminating apparatus
CN102437152A (zh) * 2006-04-24 2012-05-02 克利公司 侧视表面安装式白光led
WO2008001799A1 (fr) * 2006-06-27 2008-01-03 Mitsubishi Chemical Corporation Dispositif d'éclairage
CN1976069A (zh) * 2006-12-05 2007-06-06 上海纳晶科技有限公司 隔热式封装结构的白光led的制造方法
JP5080881B2 (ja) * 2007-06-27 2012-11-21 ナミックス株式会社 発光ダイオードチップの封止体の製造方法
DE102007054800B4 (de) * 2007-09-28 2024-12-12 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Lumineszenzdiodenchip mit Lumineszenzkonversionsvorrichtung und Verfahren zum Herstellen von Lumineszenzdiodenchips mit Lumineszenzkonversionsvorrichtung
US8890186B2 (en) 2008-03-28 2014-11-18 Panasonic Corporation Molded resin product, semiconductor light-emitting source, lighting device, and method for manufacturing molded resin product
CN101333422A (zh) 2008-07-11 2008-12-31 包书林 Led芯片粘结胶

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003142737A (ja) * 2001-08-22 2003-05-16 Nichia Chem Ind Ltd 発光装置
JP2007019096A (ja) * 2005-07-05 2007-01-25 Toyoda Gosei Co Ltd 発光装置及びその製造方法
JP2007146008A (ja) * 2005-11-28 2007-06-14 Kyocera Corp 蛍光体及び波長変換器並びに発光装置
JP2009530437A (ja) * 2006-03-15 2009-08-27 エルジー イノテック カンパニー リミテッド 蓄光シート
WO2008104936A2 (en) * 2007-02-26 2008-09-04 Koninklijke Philips Electronics N.V. Led with phosphor tile and overmolded phosphor in lens
JP2009235368A (ja) * 2007-04-10 2009-10-15 Shin Etsu Chem Co Ltd 蛍光体含有接着性シリコーン組成物、該組成物からなる組成物シート、及び該シートを使用する発光装置の製造方法
WO2009069671A1 (ja) * 2007-11-29 2009-06-04 Nichia Corporation 発光装置及びその製造方法
JP2009188207A (ja) * 2008-02-06 2009-08-20 Nitto Denko Corp 光半導体素子封止用樹脂シートおよび光半導体装置

Also Published As

Publication number Publication date
DE102009040148A1 (de) 2011-03-10
CN102498751B (zh) 2016-05-18
TWI470839B (zh) 2015-01-21
WO2011026716A1 (de) 2011-03-10
TW201117432A (en) 2011-05-16
EP2474203B1 (de) 2017-08-02
EP2474203A1 (de) 2012-07-11
US9055655B2 (en) 2015-06-09
US20120146076A1 (en) 2012-06-14
CN102498751A (zh) 2012-06-13
KR20120062725A (ko) 2012-06-14

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