JP2013501360A5 - - Google Patents

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Publication number
JP2013501360A5
JP2013501360A5 JP2012523091A JP2012523091A JP2013501360A5 JP 2013501360 A5 JP2013501360 A5 JP 2013501360A5 JP 2012523091 A JP2012523091 A JP 2012523091A JP 2012523091 A JP2012523091 A JP 2012523091A JP 2013501360 A5 JP2013501360 A5 JP 2013501360A5
Authority
JP
Japan
Prior art keywords
ion
ion beam
mask
current
target substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2012523091A
Other languages
English (en)
Japanese (ja)
Other versions
JP2013501360A (ja
Filing date
Publication date
Priority claimed from US12/845,665 external-priority patent/US8164068B2/en
Application filed filed Critical
Publication of JP2013501360A publication Critical patent/JP2013501360A/ja
Publication of JP2013501360A5 publication Critical patent/JP2013501360A5/ja
Ceased legal-status Critical Current

Links

JP2012523091A 2009-07-30 2010-07-30 ファラデープローブを利用したマスクの状態のモニタリング Ceased JP2013501360A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US22985209P 2009-07-30 2009-07-30
US61/229,852 2009-07-30
US12/845,665 2010-07-28
US12/845,665 US8164068B2 (en) 2009-07-30 2010-07-28 Mask health monitor using a faraday probe
PCT/US2010/043912 WO2011014779A1 (en) 2009-07-30 2010-07-30 A mask health monitor using a faraday probe

Publications (2)

Publication Number Publication Date
JP2013501360A JP2013501360A (ja) 2013-01-10
JP2013501360A5 true JP2013501360A5 (https=) 2013-04-25

Family

ID=43037126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012523091A Ceased JP2013501360A (ja) 2009-07-30 2010-07-30 ファラデープローブを利用したマスクの状態のモニタリング

Country Status (7)

Country Link
US (2) US8164068B2 (https=)
EP (1) EP2460173A1 (https=)
JP (1) JP2013501360A (https=)
KR (1) KR20120049220A (https=)
CN (1) CN102576640B (https=)
TW (1) TWI467622B (https=)
WO (1) WO2011014779A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8164068B2 (en) * 2009-07-30 2012-04-24 Varian Semiconductor Equipment Associates, Inc. Mask health monitor using a faraday probe
US8008176B2 (en) * 2009-08-11 2011-08-30 Varian Semiconductor Equipment Associates, Inc. Masked ion implant with fast-slow scan
US8378318B1 (en) 2011-11-18 2013-02-19 Varian Semiconductor Equipment Associates, Inc. Fixed mask design improvements
CN103185893A (zh) * 2011-12-31 2013-07-03 北京中科信电子装备有限公司 一种检测法拉第工作状态的方法
JP6150632B2 (ja) * 2013-06-26 2017-06-21 住友重機械イオンテクノロジー株式会社 イオンビーム測定装置及びイオンビーム測定方法
US9299534B2 (en) * 2014-01-31 2016-03-29 Varian Semiconductor Equipment Associates, Inc. Method and mechanism for erosion detection of defining apertures
CN107346724A (zh) * 2017-07-27 2017-11-14 武汉华星光电技术有限公司 离子注入设备和离子注入方法
US12013238B2 (en) * 2020-08-26 2024-06-18 Tae Technologies, Inc. Systems, devices, and methods for beam misalignment detection
CN114113717B (zh) * 2021-11-24 2022-08-30 北京航空航天大学 一种插拔式全封闭法拉第探针
US20250273427A1 (en) * 2024-02-26 2025-08-28 Applied Materials, Inc. Isolation Valve for Implant Productivity Enhancement

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2969788B2 (ja) * 1990-05-17 1999-11-02 日新電機株式会社 イオンビームの平行度測定方法、走査波形整形方法およびイオン注入装置
JP4363694B2 (ja) * 1998-04-17 2009-11-11 株式会社東芝 イオン注入装置および半導体装置の製造方法
US6300643B1 (en) * 1998-08-03 2001-10-09 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
JP5142114B2 (ja) * 2000-12-05 2013-02-13 株式会社アルバック イオン注入方法およびイオン注入装置
US6989545B1 (en) * 2004-07-07 2006-01-24 Axcelis Technologies, Inc. Device and method for measurement of beam angle and divergence
DE102004058412B4 (de) 2004-12-03 2017-03-02 Austriamicrosystems Ag Mehrfachmaske und Verfahren zur Herstellung unterschiedlich dotierter Gebiete und Verwendung des Verfahrens
US7394073B2 (en) * 2005-04-05 2008-07-01 Varian Semiconductor Equipment Associates, Inc. Methods and apparatus for ion beam angle measurement in two dimensions
US7329882B2 (en) * 2005-11-29 2008-02-12 Axcelis Technologies, Inc. Ion implantation beam angle calibration
US7476876B2 (en) * 2005-12-21 2009-01-13 Axcelis Technologies, Inc. Ion beam angle measurement systems and methods employing varied angle slot arrays for ion implantation systems
US7619229B2 (en) 2006-10-16 2009-11-17 Varian Semiconductor Equipment Associates, Inc. Technique for matching performance of ion implantation devices using an in-situ mask
JP2008146863A (ja) * 2006-12-06 2008-06-26 Nissin Ion Equipment Co Ltd イオンビーム測定方法
US7521691B2 (en) * 2006-12-08 2009-04-21 Varian Semiconductor Equipment Associates, Inc. Magnetic monitoring of a Faraday cup for an ion implanter
US8164068B2 (en) * 2009-07-30 2012-04-24 Varian Semiconductor Equipment Associates, Inc. Mask health monitor using a faraday probe
US8461030B2 (en) * 2009-11-17 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controllably implanting workpieces

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