TWI467622B - 離子植入機系統、其罩幕的監控方法與其離子束量測方法 - Google Patents

離子植入機系統、其罩幕的監控方法與其離子束量測方法 Download PDF

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Publication number
TWI467622B
TWI467622B TW099125374A TW99125374A TWI467622B TW I467622 B TWI467622 B TW I467622B TW 099125374 A TW099125374 A TW 099125374A TW 99125374 A TW99125374 A TW 99125374A TW I467622 B TWI467622 B TW I467622B
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TW
Taiwan
Prior art keywords
mask
ion
ion beam
measuring device
current
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TW099125374A
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English (en)
Chinese (zh)
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TW201117256A (en
Inventor
班杰明Ｂ 里歐登
尼可拉斯Ｐ Ｔ 貝特曼
威廉Ｔ 維弗
羅素Ｊ 洛
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瓦里安半導體設備公司
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Publication of TWI467622B publication Critical patent/TWI467622B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24528—Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H01J2237/31711—Ion implantation characterised by the area treated patterned using mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/225—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of a molecular ion, e.g. decaborane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
TW099125374A 2009-07-30 2010-07-30 離子植入機系統、其罩幕的監控方法與其離子束量測方法 TWI467622B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US22985209P 2009-07-30 2009-07-30
US12/845,665 US8164068B2 (en) 2009-07-30 2010-07-28 Mask health monitor using a faraday probe

Publications (2)

Publication Number Publication Date
TW201117256A TW201117256A (en) 2011-05-16
TWI467622B true TWI467622B (zh) 2015-01-01

Family

ID=43037126

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099125374A TWI467622B (zh) 2009-07-30 2010-07-30 離子植入機系統、其罩幕的監控方法與其離子束量測方法

Country Status (7)

Country Link
US (2) US8164068B2 (https=)
EP (1) EP2460173A1 (https=)
JP (1) JP2013501360A (https=)
KR (1) KR20120049220A (https=)
CN (1) CN102576640B (https=)
TW (1) TWI467622B (https=)
WO (1) WO2011014779A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8164068B2 (en) * 2009-07-30 2012-04-24 Varian Semiconductor Equipment Associates, Inc. Mask health monitor using a faraday probe
US8008176B2 (en) * 2009-08-11 2011-08-30 Varian Semiconductor Equipment Associates, Inc. Masked ion implant with fast-slow scan
US8378318B1 (en) 2011-11-18 2013-02-19 Varian Semiconductor Equipment Associates, Inc. Fixed mask design improvements
CN103185893A (zh) * 2011-12-31 2013-07-03 北京中科信电子装备有限公司 一种检测法拉第工作状态的方法
JP6150632B2 (ja) * 2013-06-26 2017-06-21 住友重機械イオンテクノロジー株式会社 イオンビーム測定装置及びイオンビーム測定方法
US9299534B2 (en) * 2014-01-31 2016-03-29 Varian Semiconductor Equipment Associates, Inc. Method and mechanism for erosion detection of defining apertures
CN107346724A (zh) * 2017-07-27 2017-11-14 武汉华星光电技术有限公司 离子注入设备和离子注入方法
US12013238B2 (en) * 2020-08-26 2024-06-18 Tae Technologies, Inc. Systems, devices, and methods for beam misalignment detection
CN114113717B (zh) * 2021-11-24 2022-08-30 北京航空航天大学 一种插拔式全封闭法拉第探针
US20250273427A1 (en) * 2024-02-26 2025-08-28 Applied Materials, Inc. Isolation Valve for Implant Productivity Enhancement

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060289798A1 (en) * 2005-04-05 2006-12-28 Varian Semiconductor Equipment Associates, Inc. Methods & apparatus for ion beam angle measurement in two dimensions
US20080087844A1 (en) * 2006-10-16 2008-04-17 Varian Semiconductor Equipment Associates, Inc. Technique for matching performance of ion implantation devices using an in-situ mask
TW200834680A (en) * 2006-12-08 2008-08-16 Varian Semiconductor Equipment Magnetic monitoring of a faraday cup for an ion implanter
CN101317245A (zh) * 2005-11-29 2008-12-03 艾克塞利斯技术公司 离子植入波束角校准
US20090098718A1 (en) * 2004-12-03 2009-04-16 Martin Knaipp Multiple mask and method for producing differently doped regions

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JP2969788B2 (ja) * 1990-05-17 1999-11-02 日新電機株式会社 イオンビームの平行度測定方法、走査波形整形方法およびイオン注入装置
JP4363694B2 (ja) * 1998-04-17 2009-11-11 株式会社東芝 イオン注入装置および半導体装置の製造方法
US6300643B1 (en) * 1998-08-03 2001-10-09 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
JP5142114B2 (ja) * 2000-12-05 2013-02-13 株式会社アルバック イオン注入方法およびイオン注入装置
US6989545B1 (en) * 2004-07-07 2006-01-24 Axcelis Technologies, Inc. Device and method for measurement of beam angle and divergence
US7476876B2 (en) * 2005-12-21 2009-01-13 Axcelis Technologies, Inc. Ion beam angle measurement systems and methods employing varied angle slot arrays for ion implantation systems
JP2008146863A (ja) * 2006-12-06 2008-06-26 Nissin Ion Equipment Co Ltd イオンビーム測定方法
US8164068B2 (en) * 2009-07-30 2012-04-24 Varian Semiconductor Equipment Associates, Inc. Mask health monitor using a faraday probe
US8461030B2 (en) * 2009-11-17 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controllably implanting workpieces

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090098718A1 (en) * 2004-12-03 2009-04-16 Martin Knaipp Multiple mask and method for producing differently doped regions
US20060289798A1 (en) * 2005-04-05 2006-12-28 Varian Semiconductor Equipment Associates, Inc. Methods & apparatus for ion beam angle measurement in two dimensions
CN101317245A (zh) * 2005-11-29 2008-12-03 艾克塞利斯技术公司 离子植入波束角校准
US20080087844A1 (en) * 2006-10-16 2008-04-17 Varian Semiconductor Equipment Associates, Inc. Technique for matching performance of ion implantation devices using an in-situ mask
TW200834680A (en) * 2006-12-08 2008-08-16 Varian Semiconductor Equipment Magnetic monitoring of a faraday cup for an ion implanter

Also Published As

Publication number Publication date
JP2013501360A (ja) 2013-01-10
WO2011014779A1 (en) 2011-02-03
TW201117256A (en) 2011-05-16
US8455847B2 (en) 2013-06-04
KR20120049220A (ko) 2012-05-16
US8164068B2 (en) 2012-04-24
US20120181443A1 (en) 2012-07-19
EP2460173A1 (en) 2012-06-06
CN102576640B (zh) 2015-03-11
US20110031408A1 (en) 2011-02-10
CN102576640A (zh) 2012-07-11

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