JP2013501360A - ファラデープローブを利用したマスクの状態のモニタリング - Google Patents

ファラデープローブを利用したマスクの状態のモニタリング Download PDF

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JP2013501360A
JP2013501360A JP2012523091A JP2012523091A JP2013501360A JP 2013501360 A JP2013501360 A JP 2013501360A JP 2012523091 A JP2012523091 A JP 2012523091A JP 2012523091 A JP2012523091 A JP 2012523091A JP 2013501360 A JP2013501360 A JP 2013501360A
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mask
ion
ion beam
current
platen
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Japanese (ja)
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JP2013501360A5 (https=
Inventor
リオードン、ベンジャミン、ビー．
バテマン、ニコラス、ピー．ティー．
ウェーバー、ウィリアム、ティー．
ロウ、ラッセル、ジェイ．
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バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24528—Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H01J2237/31711—Ion implantation characterised by the area treated patterned using mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/225—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of a molecular ion, e.g. decaborane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
JP2012523091A 2009-07-30 2010-07-30 ファラデープローブを利用したマスクの状態のモニタリング Ceased JP2013501360A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US22985209P 2009-07-30 2009-07-30
US61/229,852 2009-07-30
US12/845,665 2010-07-28
US12/845,665 US8164068B2 (en) 2009-07-30 2010-07-28 Mask health monitor using a faraday probe
PCT/US2010/043912 WO2011014779A1 (en) 2009-07-30 2010-07-30 A mask health monitor using a faraday probe

Publications (2)

Publication Number Publication Date
JP2013501360A true JP2013501360A (ja) 2013-01-10
JP2013501360A5 JP2013501360A5 (https=) 2013-04-25

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JP2012523091A Ceased JP2013501360A (ja) 2009-07-30 2010-07-30 ファラデープローブを利用したマスクの状態のモニタリング

Country Status (7)

Country Link
US (2) US8164068B2 (https=)
EP (1) EP2460173A1 (https=)
JP (1) JP2013501360A (https=)
KR (1) KR20120049220A (https=)
CN (1) CN102576640B (https=)
TW (1) TWI467622B (https=)
WO (1) WO2011014779A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017510024A (ja) * 2014-01-31 2017-04-06 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 画定アパーチャの浸食検出方法及び装置

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8164068B2 (en) * 2009-07-30 2012-04-24 Varian Semiconductor Equipment Associates, Inc. Mask health monitor using a faraday probe
US8008176B2 (en) * 2009-08-11 2011-08-30 Varian Semiconductor Equipment Associates, Inc. Masked ion implant with fast-slow scan
US8378318B1 (en) 2011-11-18 2013-02-19 Varian Semiconductor Equipment Associates, Inc. Fixed mask design improvements
CN103185893A (zh) * 2011-12-31 2013-07-03 北京中科信电子装备有限公司 一种检测法拉第工作状态的方法
JP6150632B2 (ja) * 2013-06-26 2017-06-21 住友重機械イオンテクノロジー株式会社 イオンビーム測定装置及びイオンビーム測定方法
CN107346724A (zh) * 2017-07-27 2017-11-14 武汉华星光电技术有限公司 离子注入设备和离子注入方法
US12013238B2 (en) * 2020-08-26 2024-06-18 Tae Technologies, Inc. Systems, devices, and methods for beam misalignment detection
CN114113717B (zh) * 2021-11-24 2022-08-30 北京航空航天大学 一种插拔式全封闭法拉第探针
US20250273427A1 (en) * 2024-02-26 2025-08-28 Applied Materials, Inc. Isolation Valve for Implant Productivity Enhancement

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000003881A (ja) * 1998-04-17 2000-01-07 Toshiba Corp イオン注入装置、イオン発生装置および半導体装置の製造方法
JP2002176005A (ja) * 2000-12-05 2002-06-21 Ulvac Japan Ltd イオン注入方法およびイオン注入装置
JP2008506239A (ja) * 2004-07-07 2008-02-28 アクセリス テクノロジーズ インコーポレーテッド ビーム角度と、スキャンされるビームまたはリボンビームの平面に対して直交する発散の測定のための装置及び方法
JP2008522420A (ja) * 2004-12-03 2008-06-26 オーストリアマイクロシステムズ アクチエンゲゼルシャフト 種々異なってドープされた領域を製作するための多重マスク及び方法
JP2008146863A (ja) * 2006-12-06 2008-06-26 Nissin Ion Equipment Co Ltd イオンビーム測定方法
JP2009521789A (ja) * 2005-12-21 2009-06-04 アクセリス テクノロジーズ， インコーポレイテッド イオン注入システムのための多様な角度のスロットアレーを用いたイオンビームの角度測定システムおよび方法
JP2009524195A (ja) * 2006-01-20 2009-06-25 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド ２つの次元でイオンビーム角を測定する方法及び装置
JP2010507253A (ja) * 2006-10-16 2010-03-04 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド インサイチュマスクを用いてイオン注入デバイス間で性能を一致させる技術

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2969788B2 (ja) * 1990-05-17 1999-11-02 日新電機株式会社 イオンビームの平行度測定方法、走査波形整形方法およびイオン注入装置
US6300643B1 (en) * 1998-08-03 2001-10-09 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
US7329882B2 (en) * 2005-11-29 2008-02-12 Axcelis Technologies, Inc. Ion implantation beam angle calibration
US7521691B2 (en) * 2006-12-08 2009-04-21 Varian Semiconductor Equipment Associates, Inc. Magnetic monitoring of a Faraday cup for an ion implanter
US8164068B2 (en) * 2009-07-30 2012-04-24 Varian Semiconductor Equipment Associates, Inc. Mask health monitor using a faraday probe
US8461030B2 (en) * 2009-11-17 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controllably implanting workpieces

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000003881A (ja) * 1998-04-17 2000-01-07 Toshiba Corp イオン注入装置、イオン発生装置および半導体装置の製造方法
JP2002176005A (ja) * 2000-12-05 2002-06-21 Ulvac Japan Ltd イオン注入方法およびイオン注入装置
JP2008506239A (ja) * 2004-07-07 2008-02-28 アクセリス テクノロジーズ インコーポレーテッド ビーム角度と、スキャンされるビームまたはリボンビームの平面に対して直交する発散の測定のための装置及び方法
JP2008522420A (ja) * 2004-12-03 2008-06-26 オーストリアマイクロシステムズ アクチエンゲゼルシャフト 種々異なってドープされた領域を製作するための多重マスク及び方法
JP2009521789A (ja) * 2005-12-21 2009-06-04 アクセリス テクノロジーズ， インコーポレイテッド イオン注入システムのための多様な角度のスロットアレーを用いたイオンビームの角度測定システムおよび方法
JP2009524195A (ja) * 2006-01-20 2009-06-25 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド ２つの次元でイオンビーム角を測定する方法及び装置
JP2010507253A (ja) * 2006-10-16 2010-03-04 バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド インサイチュマスクを用いてイオン注入デバイス間で性能を一致させる技術
JP2008146863A (ja) * 2006-12-06 2008-06-26 Nissin Ion Equipment Co Ltd イオンビーム測定方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017510024A (ja) * 2014-01-31 2017-04-06 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 画定アパーチャの浸食検出方法及び装置

Also Published As

Publication number Publication date
WO2011014779A1 (en) 2011-02-03
TW201117256A (en) 2011-05-16
US8455847B2 (en) 2013-06-04
KR20120049220A (ko) 2012-05-16
US8164068B2 (en) 2012-04-24
TWI467622B (zh) 2015-01-01
US20120181443A1 (en) 2012-07-19
EP2460173A1 (en) 2012-06-06
CN102576640B (zh) 2015-03-11
US20110031408A1 (en) 2011-02-10
CN102576640A (zh) 2012-07-11

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