CN102576640B - 离子植入机系统及其罩幕测定与对准方法 - Google Patents

离子植入机系统及其罩幕测定与对准方法 Download PDF

Info

Publication number
CN102576640B
CN102576640B CN201080032799.2A CN201080032799A CN102576640B CN 102576640 B CN102576640 B CN 102576640B CN 201080032799 A CN201080032799 A CN 201080032799A CN 102576640 B CN102576640 B CN 102576640B
Authority
CN
China
Prior art keywords
ion
cover curtain
ion beam
measurement device
current measurement
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080032799.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN102576640A (zh
Inventor
班杰明·B·里欧登
尼可拉斯·P·T·贝特曼
威廉·T·维弗
罗素·J·洛
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Varian Semiconductor Equipment Associates Inc
Original Assignee
Varian Semiconductor Equipment Associates Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Varian Semiconductor Equipment Associates Inc filed Critical Varian Semiconductor Equipment Associates Inc
Publication of CN102576640A publication Critical patent/CN102576640A/zh
Application granted granted Critical
Publication of CN102576640B publication Critical patent/CN102576640B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • H10F77/1223—Active materials comprising only Group IV materials characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/22—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245—Detection characterised by the variable being measured
    • H01J2237/24507—Intensity, dose or other characteristics of particle beams or electromagnetic radiation
    • H01J2237/24514—Beam diagnostics including control of the parameter or property diagnosed
    • H01J2237/24528—Direction of beam or parts thereof in view of the optical axis, e.g. beam angle, angular distribution, beam divergence, beam convergence or beam landing angle on sample or workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation
    • H01J2237/31706—Ion implantation characterised by the area treated
    • H01J2237/3171—Ion implantation characterised by the area treated patterned
    • H01J2237/31711—Ion implantation characterised by the area treated patterned using mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/202—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials
    • H10P30/204—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping characterised by the semiconductor materials into Group IV semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/21—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of electrically active species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P30/00—Ion implantation into wafers, substrates or parts of devices
    • H10P30/20—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping
    • H10P30/225—Ion implantation into wafers, substrates or parts of devices into semiconductor materials, e.g. for doping of a molecular ion, e.g. decaborane
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electron Sources, Ion Sources (AREA)
CN201080032799.2A 2009-07-30 2010-07-30 离子植入机系统及其罩幕测定与对准方法 Expired - Fee Related CN102576640B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US22985209P 2009-07-30 2009-07-30
US61/229,852 2009-07-30
US12/845,665 2010-07-28
US12/845,665 US8164068B2 (en) 2009-07-30 2010-07-28 Mask health monitor using a faraday probe
PCT/US2010/043912 WO2011014779A1 (en) 2009-07-30 2010-07-30 A mask health monitor using a faraday probe

Publications (2)

Publication Number Publication Date
CN102576640A CN102576640A (zh) 2012-07-11
CN102576640B true CN102576640B (zh) 2015-03-11

Family

ID=43037126

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080032799.2A Expired - Fee Related CN102576640B (zh) 2009-07-30 2010-07-30 离子植入机系统及其罩幕测定与对准方法

Country Status (7)

Country Link
US (2) US8164068B2 (https=)
EP (1) EP2460173A1 (https=)
JP (1) JP2013501360A (https=)
KR (1) KR20120049220A (https=)
CN (1) CN102576640B (https=)
TW (1) TWI467622B (https=)
WO (1) WO2011014779A1 (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8164068B2 (en) * 2009-07-30 2012-04-24 Varian Semiconductor Equipment Associates, Inc. Mask health monitor using a faraday probe
US8008176B2 (en) * 2009-08-11 2011-08-30 Varian Semiconductor Equipment Associates, Inc. Masked ion implant with fast-slow scan
US8378318B1 (en) 2011-11-18 2013-02-19 Varian Semiconductor Equipment Associates, Inc. Fixed mask design improvements
CN103185893A (zh) * 2011-12-31 2013-07-03 北京中科信电子装备有限公司 一种检测法拉第工作状态的方法
JP6150632B2 (ja) * 2013-06-26 2017-06-21 住友重機械イオンテクノロジー株式会社 イオンビーム測定装置及びイオンビーム測定方法
US9299534B2 (en) * 2014-01-31 2016-03-29 Varian Semiconductor Equipment Associates, Inc. Method and mechanism for erosion detection of defining apertures
CN107346724A (zh) * 2017-07-27 2017-11-14 武汉华星光电技术有限公司 离子注入设备和离子注入方法
US12013238B2 (en) * 2020-08-26 2024-06-18 Tae Technologies, Inc. Systems, devices, and methods for beam misalignment detection
CN114113717B (zh) * 2021-11-24 2022-08-30 北京航空航天大学 一种插拔式全封闭法拉第探针
US20250273427A1 (en) * 2024-02-26 2025-08-28 Applied Materials, Inc. Isolation Valve for Implant Productivity Enhancement

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101069269A (zh) * 2004-12-03 2007-11-07 奥地利微系统股份有限公司 多重掩模和制造不同掺杂区域的方法
CN101317245A (zh) * 2005-11-29 2008-12-03 艾克塞利斯技术公司 离子植入波束角校准
CN101371328A (zh) * 2006-01-20 2009-02-18 瓦里安半导体设备公司 二维离子束角度测量的方法及其装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2969788B2 (ja) * 1990-05-17 1999-11-02 日新電機株式会社 イオンビームの平行度測定方法、走査波形整形方法およびイオン注入装置
JP4363694B2 (ja) * 1998-04-17 2009-11-11 株式会社東芝 イオン注入装置および半導体装置の製造方法
US6300643B1 (en) * 1998-08-03 2001-10-09 Varian Semiconductor Equipment Associates, Inc. Dose monitor for plasma doping system
JP5142114B2 (ja) * 2000-12-05 2013-02-13 株式会社アルバック イオン注入方法およびイオン注入装置
US6989545B1 (en) * 2004-07-07 2006-01-24 Axcelis Technologies, Inc. Device and method for measurement of beam angle and divergence
US7476876B2 (en) * 2005-12-21 2009-01-13 Axcelis Technologies, Inc. Ion beam angle measurement systems and methods employing varied angle slot arrays for ion implantation systems
US7619229B2 (en) 2006-10-16 2009-11-17 Varian Semiconductor Equipment Associates, Inc. Technique for matching performance of ion implantation devices using an in-situ mask
JP2008146863A (ja) * 2006-12-06 2008-06-26 Nissin Ion Equipment Co Ltd イオンビーム測定方法
US7521691B2 (en) * 2006-12-08 2009-04-21 Varian Semiconductor Equipment Associates, Inc. Magnetic monitoring of a Faraday cup for an ion implanter
US8164068B2 (en) * 2009-07-30 2012-04-24 Varian Semiconductor Equipment Associates, Inc. Mask health monitor using a faraday probe
US8461030B2 (en) * 2009-11-17 2013-06-11 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for controllably implanting workpieces

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101069269A (zh) * 2004-12-03 2007-11-07 奥地利微系统股份有限公司 多重掩模和制造不同掺杂区域的方法
CN101317245A (zh) * 2005-11-29 2008-12-03 艾克塞利斯技术公司 离子植入波束角校准
CN101371328A (zh) * 2006-01-20 2009-02-18 瓦里安半导体设备公司 二维离子束角度测量的方法及其装置

Also Published As

Publication number Publication date
JP2013501360A (ja) 2013-01-10
WO2011014779A1 (en) 2011-02-03
TW201117256A (en) 2011-05-16
US8455847B2 (en) 2013-06-04
KR20120049220A (ko) 2012-05-16
US8164068B2 (en) 2012-04-24
TWI467622B (zh) 2015-01-01
US20120181443A1 (en) 2012-07-19
EP2460173A1 (en) 2012-06-06
US20110031408A1 (en) 2011-02-10
CN102576640A (zh) 2012-07-11

Similar Documents

Publication Publication Date Title
CN102576640B (zh) 离子植入机系统及其罩幕测定与对准方法
TWI485743B (zh) 可控制地植入工件的裝置與方法
US20100154870A1 (en) Use of Pattern Recognition to Align Patterns in a Downstream Process
TWI404104B (zh) 離子植入器之離子束角度調整
US20090317937A1 (en) Maskless Doping Technique for Solar Cells
US8461556B2 (en) Using beam blockers to perform a patterned implant of a workpiece
US7329882B2 (en) Ion implantation beam angle calibration
US8378318B1 (en) Fixed mask design improvements
US20120056107A1 (en) Uniformity control using ion beam blockers
JP5263601B2 (ja) イオン注入を補助する装置、イオン注入システム、及びイオンビームと加工物との相対的方位を確定するための方法
US20150270099A1 (en) Ion beam uniformity control using ion beam blockers
WO2013162916A1 (en) System and method for aligning substrates for multiple implants
US8598547B2 (en) Handling beam glitches during ion implantation of workpieces
TW202541087A (zh) 高頻寬可變劑量離子植入系統及方法
CN116613047A (zh) 离子注入系统
TW201826314A (zh) 彎曲的後掃描電極
KR20070115394A (ko) 이온주입설비

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150311

Termination date: 20150730

EXPY Termination of patent right or utility model